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Journal of Micro/Nanolithography, MEMS, and MOEMS

Comprehensive defect avoidance framework for mitigating extreme ultraviolet mask defects
Author(s): Abde Ali H. Kagalwalla; Puneet Gupta
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Paper Abstract

Defect avoidance methods are likely to play a key role in overcoming the challenge of mask blank defectivity in extreme ultraviolet (EUV) lithography. In this work, we propose an innovative EUV mask defect avoidance method. It is the first approach that allows exploring all the degrees of freedom available for defect avoidance (pattern shift, rotation and mask floorplanning). We model the defect avoidance problem as a global, nonconvex optimization problem and then solve it using a combination of random walk and gradient descent. For a 8-nm polysilicon layer of an ARM Cortex M0 layout, our method achieves a 60% point better mask yield compared to prior art in defect avoidance for a 40-defect mask. We show that pattern shift is the most significant degree of freedom for improving mask yield. Rotation and mask floorplanning can also help improve mask yield to a certain extent.

Paper Details

Date Published: 27 October 2014
PDF: 11 pages
J. Micro/Nanolith. MEMS MOEMS 13(4) 043005 doi: 10.1117/1.JMM.13.4.043005
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 13, Issue 4
Show Author Affiliations
Abde Ali H. Kagalwalla, Univ. of California, Los Angeles (United States)
Puneet Gupta, Univ. of California, Los Angeles (United States)

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