Neurotechnologies Plenary starts at 2:30 PM PT
Join live event
>
Conference 11691

Silicon Photonics XVI

Digital Forum: On-demand now
View Session ∨
  • Welcome and Introduction
  • OPTO Plenary Session
  • Waveguides
  • Manufacturing Technology
  • Emerging Applications
  • Integration of Silicon, Germanium, and III-Vs
  • Active Silicon Devices
  • Poster Session
  • Front Matter: Volume 11691
2021-03-08T02:37:08-08:00
LIVE NOW:
-
UPCOMING LIVE EVENTS:
Welcome and Introduction
OPTO Plenary Session
11691-201
Silicon photonics breaks new ground (Plenary Presentation)
Author(s): Graham T. Reed, Optoelectronics Research Ctr. (United Kingdom)
9 March 2021 • 12:05 PM - 12:35 PM PST
This event occurred in the past
Show Abstract + Hide Abstract
Silicon photonics has emerged as a game-changing technology for data communications in recent years. However, the technology is also applicable to an increasing number of other applications. Even in the data-comm application, the relentless demand for more data requires the performance of silicon photonics to continue to improve. In this presentation I will discuss our work in three aspects of Silicon Photonics technology. The first is high-speed optical transmitters. Our approach of co-design of the photonic and electronic components of systems has enabled us to demonstrate 100Gb/s OOK from a single silicon modulator without any equalisation. Secondly, I will discuss a technology that we have developed that allows comprehensive wafer scale testing of silicon photonics circuits, as well as trimming of individual devices, and a non-volatile method of programming silicon photonics circuits without the need for large power consumption to maintain the state of the programmed circuit. Finally, I will discuss our work with Pointcloud Inc., on 3D imaging via an integrated LIDAR system, which has demonstrated millimeter accuracy for measurements made at distances beyond 70m.
11689-202
Author(s): Kerry J. Vahala, Caltech (United States)
9 March 2021 • 12:45 PM - 1:15 PM PST
This event occurred in the past
Show Abstract + Hide Abstract
Electronics and photonics have long had a complementary coexistence across multiple application areas. Nonetheless, an ideal partnership of these two realms was made challenging in large part by the enormous frequencies of lightwaves. About two decades ago, this limitation was overcome with the invention of the laser frequency comb. Combs provide a coherent link between electronics and photonics, and because the link is bidirectional, performance attributes previously unique to each can now be shared. Their implementation has been transformative for time keeping, frequency metrology, precision spectroscopy, microwave-generation, ranging and other technologies. More recently still, high-Q nonlinear optical microresonators, have enabled chip-scale frequency combs. I will review efforts to fully integrate comb systems around these new ‘microcombs,’ along with the physical principles of the devices themselves. Finally, I will consider the revolutionary impact this chip-scale unification of the optoelectronic spectrum can have on photonic instrumentation and consumer products.
11709-203
Author(s): Kohji Mitani, NHK Japan Broadcasting Corp. (Japan)
9 March 2021 • 1:25 PM - 1:55 PM PST
This event occurred in the past
Show Abstract + Hide Abstract
Japan Broadcasting Corporation (NHK) Science & Technology Research Laboratories (STRL) has long been consistently opening up new horizons for broadcasting. Its recent R&D on 8K ultra-high-definition television―the ultimate two-dimensional television―came to fruition as a regular satellite broadcasting service in Japan in December 2018, with 8K gradually penetrating media and other industries globally. The 8K specifications were determined based on psychophysical experiments to effectively produce an immersive and realistic experience with a two-dimensional screen. STRL is continuing to enhance user experiences. Aside from two-dimensional displays, today there are media devices such as head-mounted displays, augmented reality glasses, three-dimensional displays, and haptic devices. STRL is researching these devices to enhance their performance from the perspective of visual psychology and cognitive science. It is also developing three-dimensional information processing technologies and artificial intelligence aiming for new content presentations with new immersive devices. Conveying sensations other than sight and sound will create innovative sensory experiences that provide unprecedented immersion. A new media scheme that utilizes various delivery platforms such as broadcasting, the internet, and 5G is also being studied to produce new viewing experiences.
Waveguides
11691-1
Author(s): Dura Shahwar, Matteo Cherchi, Mikko T. Harjanne, Markku Kapulainen, Timo Aalto, VTT Technical Research Ctr. of Finland Ltd. (Finland)
Digital Forum: On-demand
Show Abstract + Hide Abstract
We present polarization splitters for micron-scale silicon photonics based on Mach-Zehnder interferometers (MZI). The design is based on a 1×2 multimode interferometer (MMI) coupler at the input, arms with different form birefringence, and a 2×2 MMI coupler at the output. We have designed the polarization splitters based on an advanced transfer matrix model, then confirmed by numerical simulations. We have fabricated the devices on our 3 µm-thick silicon on insulator (SOI) platform and successfully measured polarization splitting over a wide wavelength range.
11691-2
Author(s): Tianren Fan, Reza Safian, swapnajit chakravarty, leimeng Zhuang, imec USA - Florida (United States)
Digital Forum: On-demand
Show Abstract + Hide Abstract
We demonstrate a polarization rotator-splitter (PRS) design on standard 220 nm silicon-on-insulator (SOI) wafers with all rib waveguides and 2 µm silicon dioxide (SiO2) claddings. The design is fully compatible with the imec iSiPP50G silicon photonics platform. We show TM0-TE0 converting loss < 0.4 dB and TM0-TM0 polarization crosstalk < -12 dB in the wavelength range of 1500-1570 nm. The design is robust to fabrication errors. We show a fabrication misalignment of +/- 20 nm between the waveguide ridge and the pedestal in the mode converter region will only introduce < 0.04 dB variance to our results.
11691-3
Author(s): João Costa, Instituto Superior de Engenharia de Lisboa (Portugal), UNINOVA (Portugal); Daniel Almeida, Alessandro Fantoni, Instituto Superior de Engenharia de Lisboa (Portugal); Paulo Lourenco, Miguel Fernandes, Manuela Vieira, Instituto Superior de Engenharia de Lisboa (Portugal), UNINOVA (Portugal)
Digital Forum: On-demand
Show Abstract + Hide Abstract
Optical power splitters are widely used in many applications and different typologies have been developed for devices dedicated to this function. Among them, the multimode interference design is especially attractive for its simplicity and performance making it a strong candidate for low-cost applications, such as photonics lab-on-chips for biomedical point of care systems. Within this context, splitting the optical beam equally into multiple channels is of fundamental importance to provide reference arms, parallel sensing of different biomarkers and allowing multiplexed reading schemes. From a theoretical point of view, the multimode structure allows implementation of the power splitting function for an arbitrary number of channels, but in practice its performance is limited by lithographic mask imperfections and waveguide width. In this work we analyze multimode waveguide structures, based on amorphous silicon (a-Si:H) over insulator (SiO$_2$), which can be produced by the PECVD.
11691-4
Author(s): Hamed Arianfard, Jiayang Wu, Saulius Juodkazis, David J. Moss, Swinburne Univ. of Technology (Australia)
Digital Forum: On-demand
Show Abstract + Hide Abstract
We investigate advanced integrated photonic resonators formed by mutually coupled Sagnac loop reflectors (MC-SLRs). Mode interference in the MC-SLR resonators is tailored to achieve versatile filter shapes with high performance, which enables flexible spectral engineering for diverse applications. By adjusting the reflectivity of the Sagnac loop reflectors (SLRs) as well as the coupling strength between different SLRs, we achieve optical analogues of Fano resonances with ultrahigh spectral slope rates, wavelength interleaving / non-blocking switching functions with significantly enhanced filtering flatness, and compact bandpass filters with improved roll-off. Our results highlight the strong potential of MC-SLR resonators as advanced multi-functional integrated photonic filters for flexible spectral engineering in optical communications systems.
11691-6
Author(s): Iñigo Molina-Fernández, Abdelfettah Hadij-Elhouati, José Manuel Luque-González, Daniel Pereira, Alejandro Sánchez Postigo, Gonzalo Wangüenmert-Perez, Alejandro Ortega-Moñux, Robert Halir, Jose de Oliva Rubio, Univ. de Málaga (Spain); Jens H. Schmid, Pavel Cheben, National Research Council Canada (Canada); Jiri Ctyroký, Institute of Photonics and Electronics of the CAS, v.v.i. (Czech Republic)
Digital Forum: On-demand
Show Abstract + Hide Abstract
Periodic silicon waveguides with a pitch that is below half the effective wavelength of light support diffraction-less Bloch modes. These modes propagate as through a homogeneous, artificial-core metamaterial waveguide whose optical characteristics can be engineered by lithographic patterning. Subwavelength gratings (SWGs) provide designers with unique tools to control the refractive index, dispersion and birefringence of the equivalent metamaterial, yielding improved device performance. Based on this approach many high-performance optical devices have been designed and experimentally demonstrated in the last years. In this paper we will review the fundamentals of SWG engineering and present some of our latest findings.
Manufacturing Technology
11691-7
Author(s): Saeed Fathololoumi, David Hui, Susheel Jadhav, Kimchau Nguyen, Meer Nazmus Sakib, Zhi Li, Hari Mahalingam, Siamak Amiralizadeh Asl, Nelson N. Tang, Harel Frish, Ling Liao, Intel Corp. (United States)
Digital Forum: On-demand
Show Abstract + Hide Abstract
We present a fully operational Silicon Photonics Integrated circuit co-packaged with switch ASICs for future low power and high bandwidth interconnects. The details of the device level, PIC level and module level design and performance are discuses.
11691-8
Author(s): Tadashi Murao, Jun Ushida, Hiroyuki Takahashi, Masatoshi Tokushima, Akemi Shiina, Tsuyoshi Horikawa, Photonics Electronics Technology Research Association (Japan)
Digital Forum: On-demand
11691-9
Author(s): Adam Darcie, Matthew Mitchell, Kashif M. Awan, Mahssa Abdolahi, Mustafa Hammood, Andreas Pfenning, Xiruo Yan, Abdelrahman Afifi, Donald Witt, Becky Lin, Steven Gou, Jaspreet Jhoja, Jingda Wu, Iman Taghavi, David Weekes, Nicolas A F Jaeger, Jeff Young, The University of British Columbia (Canada); Lukas Chrostowski, The Univ. of British Columbia (Canada)
Digital Forum: On-demand
Show Abstract + Hide Abstract
The goal of SiEPICfab is to conduct research in the fabrication of silicon photonic devices and photonic integrated circuits, and to make leading-edge silicon photonic manufacturing accessible to Canadian and international academics and industry. SiEPICfab builds on the success of the SiEPIC (Silicon Electronic Photonic Integrated Circuits) research training program, which has been offering research training workshops since 2008, by adding a fabrication facility “fab”. We have developed an advanced rapid prototyping facility to support a complete ecosystem of companies involved in silicon photonics product development, including modelling, design, library development, fabrication, test, and packaging of silicon photonics. SiEPICfab allows designers to rapidly complete design-fabricate-test cycles, with the potential for photonic wire bond integration of lasers and optical fibres.
11691-11
Author(s): Gaehun Jo, Pierre Edinger, Simon Bleiker, Xiaojing Wang, KTH Royal Institute of Technology (Sweden); Alain Y. Takabayashi, Hamed Sattari, Niels Quack, Ecole Polytechnique Fédérale de Lausanne (Switzerland); Moises A. Jezzini de Anda, Tyndall National Institute (Ireland); Peter Verheyen, imec (Belgium); Göran Stemme, KTH Royal Institute of Technology (Sweden); Wim Bogaerts, Univ. Gent (Belgium); Kristinn B. Gylfason, Frank Niklaus, KTH Royal Institute of Technology (Sweden)
Digital Forum: On-demand
Show Abstract + Hide Abstract
Silicon (Si) photonic micro-electro-mechanical systems (MEMS) is emerging as a promising technology for large-scale reconfigurable photonics with potential applications. For silicon photonic MEMS devices, vacuum packaging is crucial to the performance and longevity, and to protect the photonic devices from contamination. Here, we demonstrate a wafer-level vacuum packaging approach to hermetically seal Si photonic MEMS wafers produced in the iSiPP50G Si photonics foundry platform of IMEC. The packaging approach consists of transfer bonding and sealing the silicon photonic MEMS devices with 30 µm-thick Si caps, which were prefabricated on a 100 mm-diameter silicon-on-insulator (SOI) wafer. The packaging process achieved successful wafer-scale vacuum sealing of various photonic devices. The functionality of photonic MEMS after the vacuum packaging was confirmed. Thus, the demonstrated thin Si cap packaging shows the possibility of a novel vacuum sealing method for the photonic MEMS.
Emerging Applications
11691-12
Author(s): David A. B. Miller, Stanford Univ. (United States)
Digital Forum: On-demand
Show Abstract + Hide Abstract
Silicon photonics can make complex circuits. We now understand that meshes of interferometers can perform arbitrary linear operations, beyond previous optical approaches. But configuring and stabilizing large meshes could be challenging. Fortunately, a class of architectures can both implement any linear transform and can also be self-configured and self-stabilized, even without any calculations. They can also adapt in real time to changing problems and environments. Applications include adaptive mode multiplexing and demultiplexing, automatic beam coupling, complex linear transforms for classical and quantum processing, and full measurement of amplitude and phase of multimode fields. Architectures, algorithms, and applications will be discussed.
11691-13
Author(s): Remus Nicolaescu, Christopher Rogers, Alexander Y. Piggott, Pointcloud Inc. (United States); David J. Thomson, Optoelectronics Research Ctr. (United Kingdom); Ion E. Opris, Opris Consulting (United States); Steven A. Fortune, Andrew J. Compston, Alexander Gondarenko, Pointcloud Inc. (United States); Fanfan Meng, Xia Chen, Graham T. Reed, Optoelectronics Research Ctr. (United Kingdom)
Digital Forum: On-demand
Show Abstract + Hide Abstract
Accurate 3D imaging is essential for machines to map and interact with the physical world. While numerous 3D imaging technologies exist, each addressing niche applications with varying degrees of success, none have achieved the breadth of applicability and impact that digital image sensors have achieved in the 2D imaging world. A large-scale, two-dimensional focal plane array of coherent detector pixels operating as a light detection and ranging (LiDAR) system could serve as the core of a universal 3D imaging platform. It would enable megapixel resolution, high depth accuracy, immunity to interference from sunlight, as well as the ability to directly measure the velocity of moving objects. We present the first large-scale coherent detector array consisting of 512 (32×16) pixels, and its operation in a 3D imaging system. We will discuss performance characteristics, future architectural implementations and opportunities for pixel size reduction to enable 10 megapixels and beyond coherent imaging cameras.
11691-14
Author(s): Wouter J. Westerveld, Md. Mahmud-Ul-Hasan, Cedric Pieters, Roelof A. Jansen, Simone Severi, Veronique Rochus, Xavier Rottenberg, imec (Belgium)
Digital Forum: On-demand
Show Abstract + Hide Abstract
Future applications of ultrasound and photoacoustic imaging require a matrix of small and sensitive ultrasound sensors with read-out through a flexible cable. Silicon photonic ultrasound sensors have good prospects: small and sensitive sensors, wafer-scale fabrication, and matrix read-out via single optical fiber using photonic multiplexing. Here, we discuss different types of silicon photonic ultrasound sensors and their applications. This includes our optomechanical ultrasound sensor with extreme sensitivity that is achieved with an innovative optomechanical silicon photonic waveguide in an acoustical membrane. We discuss limitations of state-of-the-art piezoelectric sensors, how silicon photonic sensors overcome these, and applications in medical imaging.
11691-18
Author(s): Mingfei Ding, Yiwei Xie, Changping Zhang, Zhejiang University (China); Min Teng, Abu Naim R. Ahmed, Reza Safian, Swapnajit Chakravarty, imec USA - Florida (United States); Pengcheng Jiao, Daoxin Dai, Zhejiang University (China); Leimeng Zhuang, imec USA - Florida (United States)
Digital Forum: On-demand
Show Abstract + Hide Abstract
LIDAR on a silicon chip holds strong potentials for LIDAR system solutions featuring low cost, small size and high robustness. In line with this effort, on-chip circulators are of great interest as they bring significant benefit for system complexity reduction and SNR improvement by enabling the LIDAR transmitter and receiver to share a single common aperture. Here, we present two different passive silicon photonics implementations of nonlinear switches as conditional circulators for LIDAR applications. Both implementations are foundry-compatible using only regular passive silicon waveguide components and are fully demonstrated in experiment.
Integration of Silicon, Germanium, and III-Vs
11691-19
Author(s): Jacopo Frigerio, Politecnico di Milano (Italy); Leonetta Baldassarre, Sapienza Univ. di Roma (Italy); Giovanni Pellegrini, Politecnico di Milano (Italy); Marco P. Fischer, Univ. Konstanz (Germany); Kevin Gallacher, Ross W. Millar, Univ. of Glasgow (United Kingdom); Andrea Ballabio, Politecnico di Milano (Italy); Daniele Brida, Univ. du Luxembourg (Luxembourg); Giovanni Isella, Politecnico di Milano (Italy); Enrico Napolitani, Dipartimento di Fisica e Astronomia, Università di Padova and CNR-IMM MATIS, Via Marzolo 8, I-35131 (Italy); Douglas J. Paul, Univ. of Glasgow (United Kingdom); Michele Ortolani, Sapienza Univ. di Roma (Italy); Paolo Biagioni, Politecnico di Milano (Italy)
Digital Forum: On-demand
Show Abstract + Hide Abstract
In the last decade, silicon photonics has undergone an impressive development driven by an increasing number of technological applications. Plasmonics has not yet made its way to the microelectronic industry, mostly because of the lack of compatibility of typical plasmonic materials with foundry processes. In this framework, We have developed a plasmonic platform based on heavily doped Ge grown on silicon substrates. The plasmonic resonances of Ge-on-Si nanoantennas have been predicted by simulations, confirmed by experimental spectra and exploited for molecular sensing and for nonlinear frequency conversion. Our work represents a benchmark for group-IV mid-IR plasmonics.
11691-21
Author(s): Sandra Gomez, Ecole Polytechnique (France), Télécom Paris (France); Heming Huang, Télécom Paris (France); Frédéric Grillot, Télécom Paris (France), The Univ. of New Mexico (United States)
Digital Forum: On-demand
Show Abstract + Hide Abstract
This paper discusses the dynamics and optimized performance of an externally modulated high coherence hybrid distributed feedback (DFB) laser heterogeneously integrated onto silicon when subject to a variation of external optical feedback at different temperature conditions.
11691-23
Author(s): Frédéric Grillot, Jianan Duan, Shiyuan Zhao, Bozhang Dong, Heming Huang, Télécom Paris (France); Justin C. Norman, John E. Bowers, Univ. of California, Santa Barbara (United States)
Digital Forum: On-demand
Show Abstract + Hide Abstract
Quantum dot lasers grown on silicon are excellent candidates to achieve energy and cost-efficient optical transceivers, thanks to their outstanding properties such as high temperature stability, low threshold lasing operation, and high feedback tolerance. Optical transceivers with low relative intensity noise are also desired to carry broadband data with low bit error rate. This paper studies the intensity noise properties of epitaxial quantum dot lasers on silicon. It also analyzes the modulation properties from the noise characteristics with respect to the doping level. Finally, we provide numerical insights illustrating the effects of the Shockley-Read-Hall recombination on the intensity noise features.
Active Silicon Devices
11691-24
Author(s): Ismael Charlet, STMicroelectronics S.A. (France); Lucas Deniel, Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay (France); Pablo Acosta-Alba, Université Grenoble Alpes, CEA, LETI (France); yohan desieres, sylvain guerber, sébastien kerdiles, jessica lassarre, cédric perrot, catherine euvrard-colnat, karen ribaud, philippe grosse, Université Grenoble Alpes (France); magali gregoire, karine rovayaz, lucie mazet, sebastien cremer, nathalie vulliet, stephane monfray, STMicroelectronics S.A. (France); sonia messaoudene, Université Grenoble Alpes (France); delphine marris morini, Centre de Nanosciences et de Nanotechnologies (France); frederic boeuf, STMicroelectronics S.A. (France)
Digital Forum: On-demand
Show Abstract + Hide Abstract
Silicon photonic modulators are a key component for electro-optic transmitter within data centers. Electro-refractive modulators relying on free carrier plasma dispersion in Mach-Zehnder interferometer have become the most popular solution. Accumulation–based capacitive modulators are an efficient approach, which can reduce the modulation power consumption. In this work we study the behavior of capacitive modulators with polycrystalline silicon to form the capacitive junction. The modulators are made within the standard fabrication flow with only few add-ons. In this work we show that furnace annealing conditions and excimer laser annealing conditions during the polycrystalline silicon formation enhance the modulator performances.
11691-25
Author(s): Roy Prosopio-Galarza, Luz Antuanét Adanaqué-Infante, Instituto Nacional de Investigación y Capacitación de Telecomunicaciones de la Univ. Nacional de Ing (Peru); Hugo Enrique Hernandez-Figueroa, Univ. Estadual de Campinas (Brazil); Ruth E. Rubio-Noriega, Instituto Nacional de Investigación y Capacitación de Telecomunicaciones de la Univ. Nacional de Ing (Peru)
Digital Forum: On-demand
Show Abstract + Hide Abstract
The 1-D diode model is mostly used for vertically uniform PN-junction silicon modulators. However, there are essential deviations for the typical rib waveguide geometry. Our work aims to quantify such deviations incorporating details from 2D model simulations and offer a corrected 1-D model for estimating modulation bandwidth. We analyzed the impact of generation-recombination effects on the depletion width at the waveguide's top/bottom. We also propose and demonstrate an accurate equivalent circuit with our 1-D model corrections. We found that although the 1-D model is well-suited for small reverse biases, higher voltages and extreme junction locations affect the bandwidth's estimation dramatically.
11691-26
Author(s): Connor Mosquera, Hossam Shoman, Sudip Shekhar, Lukas Chrostowski, The Univ. of British Columbia (Canada)
Digital Forum: On-demand
Show Abstract + Hide Abstract
Silicon photoconductive heaters-detectors have been demonstrated to be useful for their ability to simultaneously act as thermo-optic phase shifters and in-waveguide photodetectors, as well for their ease of integration with silicon photonic fabrication processes. This functionality allows for the automated control of circuit elements through detect-and-tune control loops, which enable the efficient scaling of large integrated optoelectronic circuits. We have developed a compact model for the optoelectronic properties of silicon photoconductive devices in Lumerical INTERCONNECT based on measured results from fabricated devices, allowing designers to estimate the performance of such devices in circuits before fabrication. We demonstrate relative device performance compared to germanium detectors, and highlight target applications for such devices through simulation and fabricated devices, including a compact and widely reconfigurable notch filter.
11691-27
Author(s): Te-Hsin Yen, Yi-Shiou Duh, Yu-Lung Tang, Pang-Han Wu, National Taiwan Univ. (Taiwan); Yusuke Nagasaki, Ikuto Hotta, Osaka Univ. (Japan); Hao-Yu Cheng, Kung-Hsuan Lin, Institute of Physics, Academia Sinica (Taiwan); Junichi Takahara, Osaka Univ. (Japan); Shi-Wei Chu, National Taiwan Univ. (Taiwan)
Digital Forum: On-demand
Show Abstract + Hide Abstract
We discovered giant photothermal nonlinearity with nonlinear index n2 = 0.1um^2/mW in a silicon nanoblock of ~ 100nm size. The nonlinear index is five-orders larger compared with bulk due to Mie-resonance enhanced absorption and thermal insulation, and the thermal dissipation time is as fast as nanosecond due to the small size. With this nonlinearity, we demonstrated an high efficiency all-optical switch with 90% modulation depth and GHz modulation speed, which outperformed other thermal-optic switches. We believe this large and fast all-optical switching could open the possibility toward high-density integrated silicon photonic nanocircuits.
Poster Session
11691-28
Author(s): Dauren Beisenkhanov, Ikechi Augustine Ukaegbu, Nazarbayev Univ. (Kazakhstan)
Digital Forum: On-demand
Show Abstract + Hide Abstract
This paper describes the design of digital half-adder based on silicon photonics using the micro-ring resonator (MRR) structures. Silicon photonics is a promising field of study that could replace, modify or improve modern electronics. The development of this field leads to the appearance of new solutions for existing electronic circuits. The application of half-adder is wide - from the part of full-adder in computer architectures to the shift registers and counters in IP routers. MRRs in the digital half-adder design are utilized as modulators by tuning their resonant wavelengths. Hence, under no external disturbances, the rings are uncoupled by default. Also, to reduce the fabrication complexity of the proposed devices, thermo-optic modulation is employed as primary light modulating technique. The extinction ratios for CARRY and SUM are 26 dB and 12 dB, respectively. Also, the performance of the model was demonstrated under different bitrates - 100, 400, 700 and 1000 kbps.
11691-32
Author(s): Antonio Angulo Salas, Pontificia Univ. Católica del Perú (Peru); Hugo Enrique Hernandez-Figueroa, Univ. Estadual de Campinas (Brazil); Ruth E. Rubio-Noriega, Instituto Nacional de Investigación y Capacitación de Telecomunicaciones de la Univ. Nacional de Ing (Brazil)
Digital Forum: On-demand
Show Abstract + Hide Abstract
In this work, we present a new three-part heuristic method for optimizing Y-branches. We used the Particle Swarm Optimization to generate an optimal data set as the initial population for the GA. Considering an adequate population model, we demonstrate improvement in the performance for the design of a Y-branch through the GA. Lastly, we used a variation of a gradient-based search method to fine-tune the parameters to find the absolute maximum. As a result, we produced new non-intuitive Y-branch devices with on-chip areas smaller than 2μm2 and insertion loss around 0.05 dB @1550nm for the TE mode.
11691-33
Author(s): Lorenzo Tunesi, Giuseppe Giannuzzi, Ihtesham Khan, Politecnico di Torino (Italy); Jigesh K. Patel, Enrico Ghillino, Synopsys, Inc. (United States); Vittorio Curri, Andrea Carena, Paolo Bardella, Politecnico di Torino (Italy)
Digital Forum: On-demand
Show Abstract + Hide Abstract
We propose a general procedure for the automatic design of NxN integrated optical switches using the Benes configuration based on ring filters, suitable for multi-hop routing in meshed optical networks. The switch components (waveguides, couplers, optical crossings) are selected from the PDK of the target platform. The procedure automatically selects the optimal number of rings, minimizing the number of optical crossings and reducing the system transmission losses. The generated topology can be directly simulated in the Synopsys OptSim©. There, the impact of the design options on transmission performances are evaluated for the chosen signal modulation scheme and numerical simulations are automatically executed to determine the optimal combinations of the rings electrical tuning required to generate all the permutations of the inputs signals to the output ports minimizing the transmission BER. The generated Benes switch can be converted to a GDSII mask targeting the foundry of choice.
11691-34
Author(s): Giuseppe Giannuzzi, Paolo Bardella, Politecnico di Torino (Italy)
Digital Forum: On-demand
Show Abstract + Hide Abstract
We report on the statistical assessment of the properties of directional couplers based on silicon waveguides, growth by IMEC fab in Belgium in the framework of the Europractice partnership. We characterized 40 chips from a multi-project wafer, each one containing 20 passive add-drop ring resonators with different optical paths and coupling strengths. The analysis was repeated for chip temperatures ranging from 10°C to 50°C. The measurements were possible thanks to the fast multi-channel photonics alignment system provided by Physik Instrumente. The measurements we performed confirmed the reliability of the iSiPP50G platform used to growth the considered components.
11691-35
Author(s): Carlos Marcelo Rubin de Celis, Pontificia Univ. Católica del Perú (Peru); Ruth E. Rubio-Noriega, Instituto Nacional de Investigación y Capacitación de Telecomunicaciones de la Univ. Nacional de Ingeniería (Peru)
Digital Forum: On-demand
Show Abstract + Hide Abstract
The coupling between monomode silicon waveguides and Ge photodetectors is challenging due to the size mismatch between both components. This work proposes non-linear tapered coupling devices to couple light from a Silicon on insulator waveguide to an SOI Ge Photodetector. For our 65-um non-linear taper, the simulated transmission coefficients in the SCL band for 1550 nm, 1460 nm, and 1625 nm wavelength are -0.0113, -0.059, -0.0092 dB, respectively; while state of the art linear tapers of the same transmission coefficients are around 211% bigger.
11691-37
Author(s): Ricky W. Chuang, Yen-Ling Lee, Yu-Chun Huang, National Cheng Kung Univ. (Taiwan); Yao-Jen Lee, Chun-Jung Su, Taiwan Semiconductor Research Institute (Taiwan)
Digital Forum: On-demand
Show Abstract + Hide Abstract
The silicon nanowire transistors embedded with the ferroelectric hafnium-zirconium-oxide (HfZrO2) dielectric of various dimensions fabricated on the SOI substrate are duly investigated for their applicability in silicon photonics. It is well-known that the gap size and the rotating direction of the drain current-gate voltage (Id-Vg) hysteresis window typically manifested by the ferroelectric FET could reveal its ferroelectric characteristic, subthreshold swing, and the inherent qualities of the gate oxide and the adjacent interfaces. We believe that this unique hysteretic memory window can be effectively manipulated by irradiating the nanoscale device with ultraviolet (UV) laser. The implications of our findings could pave the way for the devices engaging in optical modulation and photodetection that are commonly found in silicon photonics in a foreseeable future.
11691-39
Author(s): Abdullah Nafis Khan, Asif Bilal, Osama Jalil, Muhammad Zubair, Usman Younis, Information Technology Univ. of the Punjab (Pakistan)
Digital Forum: On-demand
Show Abstract + Hide Abstract
We present the model of High-Q 1D photonic crystal waveguide resonator for wavelengths centered at 2.4 μm in silicon-on-insulator (SOI). The modelling and optimization of the silicon photonic crystal is achieved by performing 3D FDTD simulations using a commercial software. A well-known L3 cavity is designed in 400 nm thick SOI layer by removing three holes from the center. Due to fabrication tolerance circular holes are used to achieve photonic crystal effect. The cavity is optimized in two stages by placing a magnetic dipole source at the center. In first stage, a two-step optimization was performed by optimizing the air hole period followed by the radius. In second stage, the period and radius optimization of the inner most air holes of the cavity were carried out to achieve the maximum High-Q factor of 77,538 at wavelength of 2.4 μm.
11691-40
Author(s): Yu-Lung Tang, Chien-Hsuan Li, National Taiwan Univ. (Taiwan); Junichi Takahara, Osaka Univ. (Japan); Shi-Wei Chu, National Taiwan Univ. (Taiwan)
Digital Forum: On-demand
Show Abstract + Hide Abstract
We recently achieved n_2 ~10-1 μm^2/mW on a single silicon Mie resonator, i.e. five orders-of-magnitude improvement of silicon nonlinearity. Here we present the direct evidence quantitatively linking the nonlinearity to temperature rise with 10K precision, and unravel that the huge optical nonlinearity is due to nonlinear temperature rise, coupled with nonlinear absorption, resulting in 1000K increase with ~10 mW/μm^2 excitation. We developed corresponding numerical simulation tools that confirm our observations and can be adapted to explain general nanostructure heating.
Front Matter: Volume 11691
Conference Chair
Optoelectronics Research Ctr. (United Kingdom)
Conference Chair
McMaster Univ. (Canada)
Program Committee
Martijn J. R. Heck
Aarhus Univ. (Denmark)
Program Committee
Siegfried Janz
National Research Council Canada (Canada)
Program Committee
Ctr. de Nanosciences et de Nanotechnologies (France)
Program Committee
Univ. of Southampton (United Kingdom)
Program Committee
Massachusetts Institute of Technology (United States)
Program Committee
Liam O'Faolain
Tyndall National Institute (Ireland)
Program Committee
Jason Ching Eng Png
A*STAR Institute of High Performance Computing (Singapore)
Program Committee
Hong Kong Univ. of Science and Technology (Hong Kong, China)
Program Committee
Intel Corp. (United States)
Program Committee
Univ. Gent (Belgium)
Program Committee
Ctr. de Nanosciences et de Nanotechnologies (France)
Program Committee
Jeremy Witzens
RWTH Aachen Univ. (Germany)
Program Committee
Carleton Univ. (Canada)
Program Committee
Univ. of Arkansas (United States)
Program Committee
Peking Univ. (China)
Program Committee
Rockley Photonics (United States)