The Moscone Center
San Francisco, California, United States
6 - 11 March 2021
Conference OE602
Novel In-Plane Semiconductor Lasers XX
Conference Committee
Important Dates
Abstract Due:
26 August 2020

Author Notification:
2 November 2020

Manuscript Due Date:
12 February 2021

Additional Conference Information
Call for
Papers
High-quality, in-plane semiconductor lasers exhibit improved performance over a wide range of emission wavelengths from ultraviolet into the THz range. Devices are finding an ever-increasing number of applications in, for example, telecommunications, printing, spectroscopy, displays, and medical diagnostics and therapy.

Well-developed GaAs- and InP-based lasers operating from the 0.8 to 2-μm are achieving multi-watt output powers with beams of high spatial and spectral purity. Lasers made from new material systems, such as dilute nitride-antimonides, bismides or quantum-dot active regions, are pushing performance and spectral coverage. Mode-locked diode lasers are demonstrating improvements such as reduced pulse length and timing jitter. Applications in communication are pushing advances in laser dynamics, including the use of coupled and/or chaotic semiconductor lasers. The GaN based laser field continues to innovate and make progress in terms of e.g. power, reliability and to extend operation deeper into the green and the ultraviolet parts of the spectrum. In the infrared, Sb-based quantum well lasers display high performance at wavelengths up to ~ 5 μm, and quantum cascade lasers operate at wavelengths from just below 3 μm to almost 300 μm. Emerging applications in the mid/far-infrared stimulate the development of high-efficiency, high-power quantum cascade lasers operating at an ambient temperature and with new functionalities such as ultrashort pulse generation, frequency combs, injection locking, and beam control. Novel laser sources utilize recent advances in plasmonics, nanophotonics, topological photonics, and nonlinear optics for efficient generation and manipulation of light. A variety of approaches are being developed for silicon based lasers, including hybrid structures by local area growth or wafer bonding. Laser sources based on novel two-dimensional and topological materials are being proposed.

This conference provides a forum for the most recent breakthroughs in device design and performance. We solicit papers describing novel designs that achieve higher performance levels and unique operational characteristics, as well as papers describing the technical limitations of the current in-plane laser technology and lasers tailored to particular applications such as heat-assisted magnetic recording or neuromorphic computing. We are interested in new methods of fabrication or new methods of characterization that are necessary for improved performance. Papers of experimental and/or theoretical nature are welcome.

Examples of in-plane laser types of interest include, but are not limited to:
  • quantum cascade
  • organic lasers
  • InGaAsP/InP and InGaAsP/GaAs
  • InGaAsN, InGaAsNSb or GaAsBi
  • AlInGaP/GaAs visible
  • Sb-based
  • GaN- and ZnSe-based UV, blue and visible
  • silicon-based lasers
  • quantum dot lasers
  • type-II quantum-well and superlattice lasers
  • communications lasers
  • sub-wavelength scale lasers
  • photonic bandgap and microcavity lasers
  • DFB and DBR lasers
  • multi-segment and ring lasers
  • mode-locked lasers
  • coherent and incoherent laser arrays
  • topological lasers
  • MOPA and/or flared-waveguide lasers
  • high-brightness lasers
  • narrow-linewidth lasers
  • vertically-coupled in-plane lasers.
Conference Committee
Conference Chairs
Program Committee
  • Yasuhiko Arakawa, The Univ. of Tokyo (Japan)
  • Mikhail A. Belkin, Technische Univ. München (Germany)
  • Dan Botez, Univ. of Wisconsin-Madison (United States)
  • Federico Capasso, Harvard John A. Paulson School of Engineering and Applied Sciences (United States)
  • Gary A. Evans, Southern Methodist Univ. (United States)
  • Mariangela Gioannini, Politecnico di Torino (Italy)
  • Michael Kneissl, Technische Univ. Berlin (Germany)
  • Sophie Lange, Microsoft Research Cambridge (United Kingdom)
  • Kei-May Lau, Hong Kong Univ. of Science and Technology (Hong Kong, China)
  • Luke F. Lester, Virginia Polytechnic Institute and State Univ. (United States)
  • Shinji Matsuo, NTT Device Technology Labs. (Japan)

Program Committee continued...
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