The Moscone Center
San Francisco, California, United States
1 - 6 February 2020
Conference OE107
Gallium Nitride Materials and Devices XV
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Abstract Due:
24 July 2019

Author Notification:
30 September 2019

Manuscript Due Date:
8 January 2020

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Conference Chairs
Program Committee
  • Frank Bertram, Otto-von-Guericke-Univ. Magdeburg (Germany)
  • Michal Bockowski, Institute of High Pressure Physics (Poland)
  • Raffaella Calarco, Paul-Drude-Institut für Festkörperelektronik (Germany)
  • Mitch M. C. Chou, National Sun Yat-Sen Univ. (Taiwan)
  • Jen-Inn Chyi, National Central Univ. (Taiwan)
  • Martin Feneberg, Otto-von-Guericke-Univ. Magdeburg (Germany)
  • Mitsuru Funato, Kyoto Univ. (Japan)
  • Bernard Gil, Lab. Charles Coulomb (France)
  • Nicolas Grandjean, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
  • Jung Han, Yale Univ. (United States)
  • Hideki Hirayama, RIKEN (Japan)
  • Ray-Hua Horng, National Chiao Tung Univ. (Taiwan)
  • Chih-Fang Huang, National Tsing Hua Univ. (Taiwan)
  • Motoaki Iwaya, Meijo Univ. (Japan)

Program Committee continued...
  • Michael Kneissl, Technische Univ. Berlin (Germany)
  • Elison Matioli, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
  • Koh Matsumoto, Taiyo Nippon Sanso Corp. (Japan)
  • Hideto Miyake, Mie Univ. (Japan)
  • Eva Monroy, CEA-INAC (France)
  • Yong-Tae Moon, LG Electronics Inc. (Korea, Republic of)
  • Yasushi Nanishi, Ritsumeikan Univ. (Japan)
  • Ümit Özgür, Virginia Commonwealth Univ. (United States)
  • Piotr Perlin, Institute of High Pressure Physics (Poland)
  • Fan Ren, Univ. of Florida (United States)
  • Tae-Yeon Seong, Korea Univ. (Korea, Republic of)
  • Bo Shen, Peking Univ. (China)
  • Jong-In Shim, Hanyang Univ. (Korea, Republic of)
  • Maria Tchernycheva, Ctr. de Nanosciences et de Nanotechnologies (France)
  • Akio Wakejima, Nagoya Institute of Technology (Japan)
  • Chih-Chung Yang, National Taiwan Univ. (Taiwan)
  • Euijoon Yoon, Seoul National Univ. (Korea, Republic of)

Call for
This conference will focus on recent advances and challenges in GaN and related materials and electronic, switching, and optical devices based on them, including potential applications. An important objective of this conference is to provide a forum for dissemination of the latest results on current and emerging topics in GaN and related materials and devices, as well as paving the way for in-depth discussions among participants. The topics of discussion will include, but not be limited to, scientific and technological advances in all aspects of materials, including bulk GaN, ternaries and quaternaries, heterostructures, micro- and nanostructures, new substrates and new methodologies employed for alternative substrates, materials physics, devices (electronic and optical), device physics, novel devices such as microcavity based ones, processing, and particularly devices with emphasis on light-emitters in the visible and UV regions of the optical spectrum, novel growth techniques, and device reliability.

Topics for presentation and discussion will include but not be limited to:

Epitaxial growth, bulk growth, and growth of nanostructures
    MOVPE, MBE, HVPE, substrates (patterned and planar, alternative orientations), solution growth methods both very high pressure and not so high pressure, or by any other method, precursors for dopants and constituents, epitaxial lateral overgrowth, alloys, low-dimensional systems; growth, and exploitation of non-polar and semi-polar surfaces; high-resistivity bulk GaN.
Defects and doping
    Defect structures at the structural and electronic energy levels, electronic states associated with group dopants (mainly involuntary kinds); techniques applied to illuminate the local nature of impurities; surface states; surface passivation; interface states; DLTS and its variants, low-frequency noise techniques, microscopy (TEM, electron holography, STM, AFM and its variants), x-ray analysis, novel dopants. Impact of defects and doping on electronic and optical devices.
Optical, electrical, and material characterization
    Structural, electrical, and optical characterization of nanostructures, bulk material, optical and electrical devices, both on macroscopic and microscopic scales. For optical characterization, this includes photoluminescence, electroluminescence, cathodoluminescence, optical-emission imaging, non-linear optics, reflection spectroscopy, experimental measurement of energy band parameters and band structure, etc. For electrical characterization it includes Hall effect, carrier transport, magneto-transport, photoconductivity, thermally stimulated currents, etc., and for structural characterization, x-ray, TEM and its variants, local charge mapping, AFM detection of dislocations, stacking faults, etc.
III-nitride micro- and nanostructures, photonic integrated devices (PIC), and MOEMS
    Model nanostructures such as self-assembled and ordered quantum dots, quantum wires and related low-dimensional structures, for microstructures micro-rods, and micro-fin-structures, and optoelectronic and electronic devices based on these structures are among the topics envisioned for discussion. Naturally these structures include waveguides, photonic crystals, and micro-cavities for linear and non-linear optics, both as stand alone and as components for photonic integrated devices. Micro-opto-electronic-mechanical systems employing the particular properties of III-nitrides will also be among the topics of discussion.
Fundamental physics of III-nitride semiconductors
    Band structure (including quantum well heterostructures), quantum size effects, strain effects, excitons (free and bond), polaritons, nanocavities, plasmonic effects, surface phenomena, polarization effects, piezoelectric effects, theoretical models.
In-plane laser diodes, SLEDs, and VCSEL for the short visible to UV spectral region
    Topics to be covered include development, characterization, and modelling of laser diodes, superluminescent diodes (SLEDs) and vertical cavity surface emitting lasers (VCSEL) for high optical power with applications to even material processing, high speed modulation for applications such as virtual/augmented/mixed reality, VR/AR/MR and big data communication, efficient illumination, low power consumption, and single longitudinal mode operation. Extending the wavelengths toward longer and shorter wavelengths, in particular into UV will be considered.
Electronic devices
    Vertical GaN devices, and HFETs, and dielectric-gated FETs for high-power switching and RF as well as high-frequency applications inclusive of topics such as hold-voltage and on-current, hot-phonon and hot-electron effects, power dissipation, degradation/reliability, pathways for degradation and ways to improve reliability along with application are solicited. Moreover, biological sensors, field-emitters, integrated GaN electronics, and integration with other technologies are among the topics to be discussed.
Visible and UV LEDs, micro-LEDs, and detectors
    Topics include single photon-sources to high-power and high-efficiency LEDs, with a special emphasis on micro-LEDs for display and other applications, and on photo diodes including avalanche varieties, inclusive of devices physics (theory and simulations), device processing, and applications in general as well as specific ones aimed at lighting, automotive, displays, bio-medicine, spectroscopy, quantum optics, etc. Topics particularly on efficiency, reliability, and extending wavelengths toward longer and shorter wavelengths, e.g. for UV LEDs and optical detectors will be featured.
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