The Moscone Center
San Francisco, California, United States
2 - 7 February 2019
Conference OE107
Gallium Nitride Materials and Devices XIV
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Abstract Due:
25 July 2018

Author Notification:
1 October 2018

Manuscript Due Date:
9 January 2019

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Conference Chairs
Conference Co-Chairs
  • Jen-Inn Chyi, National Central Univ. (Taiwan)
  • Jung Han, Yale Univ. (United States)
  • Motoaki Iwaya, Meijo Univ. (Japan)

Program Committee
  • Frank Bertram, Otto-von-Guericke-Univ. Magdeburg (Germany)
  • Michal Bockowski, Institute of High Pressure Physics (Poland)
  • Raffaella Calarco, Paul-Drude-Institut für Festkörperelektronik (Germany)
  • Mitch M. C. Chou, National Sun Yat-Sen Univ. (Taiwan)
  • Martin Feneberg, Otto-von-Guericke-Univ. Magdeburg (Germany)
  • Mitsuru Funato, Kyoto Univ. (Japan)
  • Bernard Gil, Lab. Charles Coulomb (France)
  • Nicolas Grandjean, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
  • Hideki Hirayama, RIKEN (Japan)
  • Ray-Hua Horng, National Chiao Tung Univ. (Taiwan)
  • Chih-Fang Huang, National Tsing Hua Univ. (Taiwan)

Program Committee continued...
  • Michael Kneissl, Technische Univ. Berlin (Germany)
  • Elison Matioli, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
  • Koh Matsumoto, Taiyo Nippon Sanso Corp. (Japan)
  • Hideto Miyake, Mie Univ. (Japan)
  • Eva Monroy, Commissariat à l'Énergie Atomique (France)
  • Yong-Tae Moon, LG Electronics Inc. (Korea, Republic of)
  • Yasushi Nanishi, Ritsumeikan Univ. (Japan)
  • Ümit Özgür, Virginia Commonwealth Univ. (United States)
  • Piotr Perlin, Institute of High Pressure Physics (Poland)
  • Fan Ren, Univ. of Florida (United States)
  • Tae-Yeon Seong, Korea Univ. (Korea, Republic of)
  • Bo Shen, Peking Univ. (China)
  • Jong-In Shim, Hanyang Univ. (Korea, Republic of)
  • Maria Tchernycheva, Univ. Paris-Sud 11 (France)
  • Akio Wakejima, Nagoya Institute of Technology (Japan)
  • Chih-Chung Yang, National Taiwan Univ. (Taiwan)
  • Euijoon Yoon, Seoul National Univ. (Korea, Republic of)

Call for
This conference will focus on recent advances and challenges in GaN and related materials and electronic, switching, and optical devices based on them, including potential applications. An important objective of this conference is to provide a forum for dissemination of the latest results on current and emerging topics in GaN and related materials and devices, as well as paving the way for in-depth discussions among participants. The topics of discussion will include, but not limited to, scientific and technological advances in all aspects of materials, including bulk GaN, ternaries and quaternaries, heterostructures, new substrates and new methodologies employed for alternative substrates such as Si, materials physics, devices (electronic and optical), device physics, novel devices such as microcavities, processing, and particularly devices with emphasis on light-emitters, novel growth techniques, and device reliability.

Topics for presentation and discussion will include but not be limited to:

Bulk growth
    solution growth methods both very high pressure and not so high pressure, HVPE growth, or by any other method, characterization (structural, electrical, and optical), high-resistivity bulk GaN.
Epitaxial growth, bulk growth, and growth of nanostructures
    MOVPE, MBE, HVPE, substrates (patterned and planar, alternative orientations), precursors for dopants and constituents, epitaxial lateral overgrowth, alloys, low-dimensional systems, growth and exploitation of non-polar and semi-polar surfaces.
Defects and doping
    defect structures at the structural and electronic energy levels, electronic states associated with group dopants (mainly involuntary kinds); techniques applied to illuminate the local nature of impurities; surface states; surface passivation; interface states; DLTS and its variants, low-frequency noise techniques, microscopy (TEM, electron holography, STM, AFM and its variants), x-ray analysis, novel dopants.
Optical characterization
    photoluminescence, cathodoluminescence, optical-emission imaging, non-linear optics, reflection spectroscopy, experimental measurement of energy band parameters and band structure, etc.
Electrical characterization
    Hall effect, carrier transport, magneto-transport, photoconductivity, thermally stimulated currents, etc.
Structural characterization
    x-ray, TEM and its variants, local charge mapping, AFM detection of dislocations, stacking faults, etc.
III-nitride nanostructures
    including self-assembled and ordered quantum dots, quantum wires and related low-dimensional structures.
Fundamental physics
    band structure (including quantum well heterostructures), quantum size effects, strain effects, excitons (free and bond), polaritons, nanocavities, plasmonic effects, surface phenomena, polarization effects, piezoelectric effects, theoretical models.
    lighting by LEDs, LEDs for displays, LEDs for TVs, UV and visible LEDs (particularly radiative/nonradiative recombination processes and efficiency related topics), laser diodes (particularly extended wavelengths toward longer and shorter wavelengths), FETs and dielectric-gated FETs for high-power switching and RF as well as high-frequency applications inclusive of topics such as hold-voltage and on-current, hot-phonon and hot-electron effects, power dissipation, degradation/reliability, pathways for degradation and ways to improve reliability, UV and other optical detectors, chemical and biological sensors, field-emitters, integration with other technologies, novel devices, device theory and simulations.
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