This conference will focus on recent advances and challenges in GaN and related materials and electronic, switching, and optical devices based on them, including potential applications. An important objective of this conference is to provide a forum for dissemination of the latest results on current and emerging topics in GaN and related materials and devices, as well as paving the way for in-depth discussions among participants. The topics of discussion will include, but not be limited to, scientific and technological advances in all aspects of materials, including bulk GaN, ternaries and quaternaries, heterostructures, micro- and nanostructures, new substrates and new methodologies employed for alternative substrates, materials physics, devices (electronic and optical), device physics, novel devices such as microcavity based ones, processing, and particularly devices with emphasis on light-emitters in the visible and UV regions of the optical spectrum, novel growth techniques, and device reliability.

Topics for presentation and discussion will include but not be limited to:

Epitaxial growth, bulk growth, and growth of nanostructures Defects and doping Optical, electrical, and material characterization III-nitride micro- and nanostructures, photonic integrated devices (PIC), and MOEMS Fundamental physics of III-nitride semiconductors In-plane laser diodes, SLEDs, and VCSEL for the short visible to UV spectral region Electronic devices Visible and UV LEDs, micro-LEDs, and detectors ;
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Conference OE107

Gallium Nitride Materials and Devices XVIII

This conference has an open call for papers:
Abstract Due: 20 July 2022
Author Notification: 10 October 2022
Manuscript Due: 11 January 2023
This conference will focus on recent advances and challenges in GaN and related materials and electronic, switching, and optical devices based on them, including potential applications. An important objective of this conference is to provide a forum for dissemination of the latest results on current and emerging topics in GaN and related materials and devices, as well as paving the way for in-depth discussions among participants. The topics of discussion will include, but not be limited to, scientific and technological advances in all aspects of materials, including bulk GaN, ternaries and quaternaries, heterostructures, micro- and nanostructures, new substrates and new methodologies employed for alternative substrates, materials physics, devices (electronic and optical), device physics, novel devices such as microcavity based ones, processing, and particularly devices with emphasis on light-emitters in the visible and UV regions of the optical spectrum, novel growth techniques, and device reliability.

Topics for presentation and discussion will include but not be limited to:

Epitaxial growth, bulk growth, and growth of nanostructures
    MOVPE, MBE, HVPE, substrates (patterned and planar, alternative orientations), solution growth methods both very high pressure and not so high pressure, or by any other method, precursors for dopants and constituents, epitaxial lateral overgrowth, alloys, low-dimensional systems; growth, and exploitation of non-polar and semi-polar surfaces; high-resistivity bulk GaN.
Defects and doping
    Defect structures at the structural and electronic energy levels, electronic states associated with group dopants (mainly involuntary kinds); techniques applied to illuminate the local nature of impurities; surface states; surface passivation; interface states; DLTS and its variants, low-frequency noise techniques, microscopy (TEM, electron holography, STM, AFM and its variants), x-ray analysis, novel dopants. Impact of defects and doping on electronic and optical devices.
Optical, electrical, and material characterization
    Structural, electrical, and optical characterization of nanostructures, bulk material, optical and electrical devices, both on macroscopic and microscopic scales. For optical characterization, this includes photoluminescence, electroluminescence, cathodoluminescence, optical-emission imaging, non-linear optics, reflection spectroscopy, experimental measurement of energy band parameters and band structure, etc. For electrical characterization it includes Hall effect, carrier transport, magneto-transport, photoconductivity, thermally stimulated currents, etc., and for structural characterization, x-ray, TEM and its variants, local charge mapping, AFM detection of dislocations, stacking faults, etc.
III-nitride micro- and nanostructures, photonic integrated devices (PIC), and MOEMS
    Model nanostructures such as self-assembled and ordered quantum dots, quantum wires and related low-dimensional structures, for microstructures micro-rods, and micro-fin-structures, and optoelectronic and electronic devices based on these structures are among the topics envisioned for discussion. Naturally these structures include waveguides, photonic crystals, and micro-cavities for linear and non-linear optics, both as stand alone and as components for photonic integrated devices. Micro-opto-electronic-mechanical systems employing the particular properties of III-nitrides will also be among the topics of discussion.
Fundamental physics of III-nitride semiconductors
    Band structure (including quantum well heterostructures), quantum size effects, strain effects, excitons (free and bond), polaritons, nanocavities, plasmonic effects, surface phenomena, polarization effects, piezoelectric effects, theoretical models.
In-plane laser diodes, SLEDs, and VCSEL for the short visible to UV spectral region
    Topics to be covered include development, characterization, and modelling of laser diodes, superluminescent diodes (SLEDs) and vertical cavity surface emitting lasers (VCSEL) for high optical power with applications to even material processing, high speed modulation for applications such as virtual/augmented/mixed reality, VR/AR/MR and big data communication, efficient illumination, low power consumption, and single longitudinal mode operation. Extending the wavelengths toward longer and shorter wavelengths, in particular into UV will be considered.
Electronic devices
    Vertical GaN devices, and HFETs, and dielectric-gated FETs for high-power switching and RF as well as high-frequency applications inclusive of topics such as hold-voltage and on-current, hot-phonon and hot-electron effects, power dissipation, degradation/reliability, pathways for degradation and ways to improve reliability along with application are solicited. Moreover, biological sensors, field-emitters, integrated GaN electronics, and integration with other technologies are among the topics to be discussed.
Visible and UV LEDs, micro-LEDs, and detectors
    Topics include single photon-sources to high-power and high-efficiency LEDs, with a special emphasis on micro-LEDs for display and other applications, and on photo diodes including avalanche varieties, inclusive of devices physics (theory and simulations), device processing, and applications in general as well as specific ones aimed at lighting, automotive, displays, bio-medicine, spectroscopy, quantum optics, etc. Topics particularly on efficiency, reliability, and extending wavelengths toward longer and shorter wavelengths, e.g. for UV LEDs and optical detectors will be featured.
Conference Chair
Institute of Industrial Science, The Univ. of Tokyo (Japan)
Conference Chair
Virginia Commonwealth Univ. (United States)
Conference Chair
Technische Univ. Chemnitz (Germany)
Program Committee
Otto-von-Guericke-Univ. Magdeburg (Germany)
Program Committee
Institute of High Pressure Physics (Poland)
Program Committee
Paul-Drude-Institut für Festkörperelektronik (Germany)
Program Committee
National Sun Yat-Sen Univ. (Taiwan)
Program Committee
National Central Univ. (Taiwan)
Program Committee
Otto-von-Guericke-Univ. Magdeburg (Germany)
Program Committee
Kyoto Univ. (Japan)
Program Committee
Lab. Charles Coulomb (France)
Program Committee
Ecole Polytechnique Fédérale de Lausanne (Switzerland)
Program Committee
Yale Univ. (United States)
Program Committee
RIKEN (Japan)
Program Committee
National Yang Ming Chiao Tung Univ. (Taiwan)
Program Committee
Chih-Fang Huang
National Tsing Hua Univ. (Taiwan)
Program Committee
Meijo Univ. (Japan)
Program Committee
Technische Univ. Berlin (Germany)
Program Committee
Ecole Polytechnique Fédérale de Lausanne (Switzerland)
Program Committee
Nagoya Univ. (Japan)
Program Committee
Mie Univ. (Japan)
Program Committee
CEA-DRF (France)
Program Committee
Ritsumeikan Univ. (Japan)
Program Committee
Virginia Commonwealth Univ. (United States)
Program Committee
Institute of High Pressure Physics (Poland)
Program Committee
Univ. of Florida (United States)
Program Committee
Korea Univ. (Korea, Republic of)
Program Committee
Peking Univ. (China)
Program Committee
Hanyang Univ. (Korea, Republic of)
Program Committee
Ctr. de Nanosciences et de Nanotechnologies (France)
Program Committee
Akio Wakejima
Nagoya Institute of Technology (Japan)
Program Committee
National Taiwan Univ. (Taiwan)
Program Committee
Seoul National Univ. (Korea, Republic of)
Additional Information

View call for papers





What you will need to submit
  • Title
  • Author(s) information
  • Speaker biography
  • 250-word abstract for technical review
  • 100-word summary for the program
  • Keywords used in search for your paper (optional)
Note: Only original material should be submitted. Commercial papers, papers with no new research/development content, and papers with proprietary restrictions will not be accepted for presentation.