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The High-Power Diode Laser Technology conference provides a forum to introduce the latest advancements in brightness and power scaling of semiconductor laser devices and packages. Innovations in laser architectures based on multi-emitter bars, single emitters, and multi-chip arrays are invited. Technologies of special interest include developments in beam combining (coherent, spatial, spectral, and polarization), wavelength stabilization, high-brightness fiber coupling, high-power semiconductor device design, device-level and package-level reliability, failure mode analysis, high-efficiency operation, high-temperature operation, plus recent progress in power scaling of short wavelength and mid-IR wavelength devices.

Papers are solicited on a wide range of topics related to high-power diode laser technology:

HIGH-POWER VISIBLE AND MID-IR LASER DIODES FOR:
HIGH-POWER INFRARED LASER DIODES FOR:
ADVANCES IN HIGH-POWER LASER DIODE DEVICES AND HIGH-BRIGHTNESS INTEGRATION ;
In progress – view active session
Conference 11983

High-Power Diode Laser Technology XX

In person: 23 - 25 January 2022
View Session ∨
  • 1: Welcome to High-Power Diode Laser Technology
  • 2: Broad-area Laser Diodes and Bars I
  • 3: High-brightness, Diffraction-limited Laser Diodes
  • 4: Broad-area Laser Diodes and Bars II
  • 5: Laser Diode Reliability and Extended Wavelengths
  • 6: Laser Sources for LIDAR: Joint Session with 11982 and 11983
  • 7: Advanced Packaging Solutions for Laser Diodes: Joint Session with Conferences 11982 and 11983
  • 8: Blue Laser Diodes and Applications
  • LASE Plenary and Hot Topics
  • Posters-Tuesday
Information

POST-DEADLINE ABSTRACT SUBMISSIONS

  • Submissions are accepted through 06-December
  • Notification of acceptance by 20-December

View Call for Papers PDF Flyer
Session 1: Welcome to High-Power Diode Laser Technology
Session Chair: Yumi Yamada, Fujikura Ltd. (Japan)
11983-1
Author(s): Mark S. Zediker, NUBURU, Inc. (United States); Erik Zucker, Erik Zucker Consulting (United States)
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The High-Power Diode Laser Technology conference was first presented at SPIE Photonics West in 2003. At that time high power laser diodes were just approaching 50% in efficiency, a couple of companies were developing systems based on these diodes, and fiber lasers were not yet an industrial product. Since then, laser diodes can exceed 70% electrical efficiency, power levels have grown from the 50-Watt bar level to today’s heights of several hundred Watts. New wavelengths have been introduced and laser diode systems have increased in power from the couple of kWatts in 2003 to over 40 kWatts today. This technology area continues to expand with new applications, and new heights every year. We will review the hot topics of the time, technology, applications, and state-of-the art performance levels. What problems have been solved, which remain today, and twenty years later?
Session 2: Broad-area Laser Diodes and Bars I
Session Chair: Yumi Yamada, Fujikura Ltd. (Japan)
11983-2
Author(s): René Todt, Stefan Deubert, Dominik Jaeggi, II-VI Laser Enterprise GmbH (Switzerland)
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GaAs-based high power laser diodes in the 9xx nm wavelength-range are at the heart of modern materials processing systems. The continuing increase in reliable operating power and efficiency of these diodes has been one of the driving factors behind their wide adoption in fiber laser and direct diode systems and has been a major factor fueling the growth of the materials processing market. II-VI as a leading manufacturer of both VCSEL and edge-emitting GaAs-based laser diodes has pioneered the adoption of 6-inch GaAs laser diode technology in high volume manufacturing. In this presentation we will review the developments of the high power pump laser diode market in recent years that required the adoption of larger diameter wafer substrates, discuss selected highlights and challenges of our 6-inch GaAs laser production, and present latest chip performance results.
11983-3
Author(s): Mohammad Jarez Miah, Anisuzzaman Boni, Dominik Martin, Pietro Della Casa, Paul A. Crump, Ferdinand-Braun-Institut (Germany)
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Advances in lateral and vertical design leading to higher power, efficiency and beam quality in 1-cm bars are presented. GaAs-based, quasi-continuous-wave, 1-cm bars using extreme-triple-asymmetric (ETAS) waveguide designs deliver increased output power and efficiency. ETAS bars with 4mm resonator and 79% fill-factor provide 1.9kW peak power (200µs, 10Hz) from a single quantum well, with 67% peak efficiency at 298K. At 203K, peak power increases to 2.26kW with 74% peak efficiency (60% at 2.0kW). Improved lateral bar layout enabled a reduced lateral divergence of 15° (95% power) at 1.9kW at 298K without sacrificing power or efficiency. Polarization purity remains above 95%.
11983-4
Author(s): Yihan Xiong, Ching-Long Jiang, Ayesha Jamil, Xiaohang Liu, Xi Liu, Prasanta Modak, Stewart McDougall, Konstantin Boucke, TRUMPF Photonics, Inc. (United States)
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We demonstrate advances in design and performance of 976 nm single emitter laser diode chips developed for application in low-cost fiber laser pump modules delivering in excess of 300 W. We show 150 µm emitter laser chips with high beam quality (BPP <5.5 mm. mrad) and extremely high reliability levels of MTTF > 172 khrs. We show that increasing emitter widths of 300 µm and higher enables scaling of reliable power to over 30 W per chip.
Session 3: High-brightness, Diffraction-limited Laser Diodes
Session Chair: Friedrich G. Bachmann, FriBa LaserNet Consulting (Germany)
11983-6
Author(s): Susumu Noda, Kenji Ishizaki, Kyoto Univ. (Japan)
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Photonic-crystal surface-emitting lasers (PCSELs) are currently attracting much attention for their simultaneous achievement of high output power and high beam quality as well as their exhibition of functionalities that are not easily achievable with other types of lasers, such as polarization and beam-pattern control and on-chip beam-direction control. To strengthen the research and development of PCSELs and make a social application of PCSELs, we recently established the Center of Excellence (COE) for PCSELs in Kyoto University, where in total more than 45 companies are related in various ways. In this conference, we will review the activity of the COE as well as the latest development of PCSELs.
11983-7
Author(s): Richard J. E. Taylor, David Childs, Richard Hogg, Vector Photonics Ltd. (United Kingdom)
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Over the past 60 years, output power from individual diode lasers has improved, but increasingly incrementally. Most high-power pump lasers today are based upon 2D laser arrays in the form of stacks of 1D semiconductor bars or 2D VCSEL arrays. Unlike these incumbents, photonic crystal surface emitters have the ability to be scaled in 2D and also provide a coherent emission. Vector Photonics is a UK based company commercialising PCSEL technology across material systems, wavelengths, and applications spaces. In this talk we review the journey from inception to commercialisation and discuss the roadmap to high power multimode and singlemode arrays.
11983-8
Author(s): Michelle Labrecque, Jenna Campbell, Kevin McClune, Fedor Talantov, Elliot Burke, Daniel S. Renner, Milan L. Mashanovitch, Paul O. Leisher, Freedom Photonics, LLC (United States)
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Q-switched Nd-based lasers are used for a variety of medical and manufacturing applications and require extremely high efficiency and stability from the diode pump, but limited commercially available solutions exist for single spatial mode direct pumping of Nd-based lasers at 885 nm. To satisfy this need, Freedom Photonics has developed ultra-robust watt-class diffraction-limited 885 nm diode lasers. We have demonstrated single-mode 885 nm diode lasers with an output power of 1.9W (1W rated) and 49% E-O efficiency. We employ facet passivation methods to protect against catastrophic optical mirror damage (COMD), and the optical power density we have demonstrated points to the effectiveness of our facet passivation strategy. These devices may be used as high efficiency pumps for Nd-doped solid-state lasers.
11983-9
Author(s): Enes Şeker, Serdar Şengül, Khalil Dadashi, Babak Olyaeefar, Abdullah Demir, Bilkent Univ. (Turkey)
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Spatially single-mode semiconductor lasers are of interest for various applications, including optical communication, material processing, and pumping single-mode fiber lasers. We propose a design for single-mode operation of high-power edge-emitting-lasers through coupling their higher-order mode to a passive waveguide. The passive cavity is precisely engineered to support the higher mode as its fundamental mode. Single lateral mode operation is confirmed through near-field, far-field and spectral measurements. This design is capable of introducing single-mode lasing with similar emissions to the current slope compared to that of the single waveguide laser. Obtained results promise the widespread application of coupled-cavity lasers to optoelectronic devices.
11983-10
Author(s): Christos Mourikis, Katrin Paschke, Ferdinand-Braun-Institut (Germany); Gaëlle Lucas-Leclin, Univ. Paris-Saclay (France), Institut d'Optique Graduate School (France), Lab. Charles Fabry, Ctr. National de la Recherche Scientifique (France); Blume Gunnar, Günther Tränkle, Ferdinand-Braun-Institut (Germany)
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Many applications from laser cutting to diseased cell destruction demand high-power lasers. Coherent beam combining is a method that can serve this need for high optical power. This method can overcome the obstacle of the optical power limitations at the diode lasers. In this paper, we present a coherent beam combining system at 808 nm with remarkable combining efficiencies over 80 %. A DBR laser with two tapered amplifiers has been used for the beam combination and a microcontroller with a proper algorithm for the phase lock process. Moreover, many significant parameters for the optimization of the system have been investigated and been presented.
11983-11
Author(s): Jenna Campbell, Michelle Labrecque, Kevin McClune, Fedor Talantov, Elliot Burke, Daniel S. Renner, Milan L. Mashanovitch, Leif A. Johansson, Paul O. Leisher, Freedom Photonics, LLC (United States)
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Broad area diode lasers operate with high power and efficiency but suffer from poor beam quality. Diffraction-limited lasers with equivalent power offer a disruptive alternative for applications ranging from fiber laser pumping to automotive LIDAR. We report >9 W continuous output power with 50% E/O from tapered diode lasers at 885 and 980 nm. We show for the first time that beam quality degradation with increasing injection is completely mitigated and maintain a slow-axis M^2 of 1.3 from threshold to rollover. These devices are suitable for use as the building block of geometrical, spectral, and coherent beam combined arrays.
Session 4: Broad-area Laser Diodes and Bars II
Session Chair: Volker Krause, Laserline GmbH (Germany)
11983-12
Author(s): Paul A. Crump, Mohamed Elattar, Mohammad Jarez Miah, Michael Ekterai, Matthias M. Karow, Dominik Martin, Andre Maassdorf, Ferdinand-Braun-Institut (Germany); Stewart McDougall, Carlo Holly, Simon Rauch, Stefan Gruetzner, Stephan G. Strohmaier, TRUMPF Laser GmbH (Germany); Günther Tränkle, Ferdinand-Braun-Institut (Germany)
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Experimental studies into the limits to beam parameter product (BPP) in high-power diode lasers are summarized. Monolithically grating-stabilized lasers confirm the presence of a well-defined series of guided modes, rather than filaments. A series of custom tests shows that thermal lensing and current spreading dominate the bias-dependent variation in BPP. The bias-independent BPP is 30-50% of the total, most likely partly originates from gain-guiding. Longitudinal temperature variation along the resonator further degrades the bias-independent background. Lateral current blocking reduces current-spreading and leads to smaller bias-dependent BPP. Thermal engineering via changes to epitaxial layers and bar layout also improves bias-dependent BPP.
11983-13
Author(s): Alexander Ovtchinnikov, IPG Photonics Corp. (United States)
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Solid State and Fiber Lasers often require high-brightness wavelength-stabilized pumps operating in 8xx-9xx nanometer range. Full wavelength locking in the wide range of operating current and heatsink temperature significantly simplifies overall construction of the Solid State and Fiber Lasers. Thus, stability of lasing wavelength against current and temperature variation has recently become an additional imperative requirement. We report on high power multimode pumps that operate at 878.6 nm and 975 nm. We discuss on chips and packaged pumps performance that features high power efficiency (up to 60% ex-fiber) and full wavelength locking (40-45 dB) in the wide range of driving current. Laser diode chip and packaged pump devices based on IPG high-volume scalable technology also ensure full wavelength stabilization in the wide range of heatsink temperature (10°C to 50°C range). We present performance of several 878.6 nm pump models rated to operate reliably in 30W – 120W power range pre
11983-14
Author(s): David M. Hemenway, Zhigang Chen, Manoj Kanskar, Wolfram Urbanek, David C.. Dawson, Ling Bao, Mark DeVito, Kristi Wagner, Rob Martinsen, nLIGHT, Inc. (United States)
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nLIGHT will report on our recent progress to develop and deliver a new 21 W chip on submount (COS) laser diode, emitting between 878 and 888 nm, packaged into our element® modules with emitter counts ranging from 1 to 12 emitters. We will present data supporting our development of this new device, along with module-level data for various module configurations demonstrating power, efficiency, brightness and reliability.
11983-15
Author(s): Marko Hübner, Martin Wilkens, Bernd Eppich, Andre Maassdorf, Dominik Martin, Arnim Ginolas, Paul Simon Basler, Paul A. Crump, Ferdinand-Braun-Institut (Germany)
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Progress in high duty-cycle quasi-continuous-wave pump modules at 780 nm is presented, based on innovative passively-side-cooled stacks of wide-aperture single emitters. The modules emit power of 1.4 kW in free space and 1 kW ex-fiber (1 mm core 0.22 NA) at 10% duty cycle (10 ms, 10 Hz). Efforts to scale to higher duty cycles are summarized, showing the innovative cooling approach allows 50% duty cycle operation (10 ms, 50 Hz) with low losses, without the need for microchannels. Recent efforts to further increase conversion efficiency by implementing more advanced low loss diode laser designs are also presented.
11983-16
Author(s): Alexander Bachmann, Christian Nölleke, Matthias Scholz, Patrick Leisching, TOPTICA Photonics AG (Germany)
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We will present our latest innovations on high-power diode lasers and discuss their application in quantum technologies. We show that these laser sources are key not only to explore the magic world of quantum physics, but also to drive the commercialization of exciting new applications coming along with the second quantum revolution, such as quantum computers, -sensing, -metrology and optical clocks. Compared to other laser sources such as gas- or solid-state lasers, diode lasers offer key advantages for these applications, e.g. their compactness, low weight, low energy consumption and low cost of ownership.
Session 5: Laser Diode Reliability and Extended Wavelengths
Session Chair: Paul A. Crump, Ferdinand-Braun-Institut (Germany)
11983-18
Author(s): Martin Adams, Fraunhofer-Institut für Lasertechnik ILT (Germany); Simon Rauch, TRUMPF Photonic Components GmbH (Germany); Carlo Holly, RWTH Aachen Univ. (Germany); Martin Traub, Hans-Dieter Hoffmann, Fraunhofer-Institut für Lasertechnik ILT (Germany)
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We present a self-consistent multiphysics model of a high-power external-cavity laser diode in the vertical-longitudinal plane of the device considering its electrical, optical and thermal properties. A vertical misalignment of the FAC lens in an external resonator configuration consisting only of FAC lens and feedback mirror leads to strongly reduced COD levels within the simulation if the feedback radiation hits the metal layers on the p-side of the device. These results are compared to experimental data of pulsed COD tests. The model is further used to investigate the influence of external reflectivity and facet quality on the COD level.
11983-19
Author(s): Yongkun Sin, Miles Brodie, Zachary Lingley, Neil Ives, The Aerospace Corp. (United States)
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High-power broad-area lasers are critical components for space-satellite-communications systems. Broad-area lasers with InGaAs-AlGaAs strained QW active regions have shown excellent characteristics. However, these lasers are susceptible to COD leading to catastrophic and sudden degradation. Since 3-D confinement of carriers reduces the chance of nonradiative recombination of carriers at growth or radiation induced defect sites, InAs-GaAs QD lasers have recently received much attention as an alternative to QW lasers and this feature also makes the QD lasers attractive for space applications, but their failure modes and mechanisms are still unknown. We studied degradation processes in high-power broad-area QW and QD lasers.
11983-37
Author(s): Martin Traub, Bastian Gronloh, Stephan Wissenberg, Thomas Westphalen, Hans-Dieter Hoffmann, Fraunhofer-Institut für Lasertechnik ILT (Germany)
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The satellite MERLIN will measure the methane concentration in the earth’s atmosphere. Fraunhofer ILT has developed the LiDAR laser source for the Franco-German project in close cooperation with Airbus Defense and Space. The laser consists of a single-frequency seeded laser oscillator, an INNOSLAB amplifier and a KTP-based frequency converter. For the oscillator, a compact fiber coupled pump module has been developed. The amplifier pump is based on qcw stacks. We will present the design of the pump optics and results of reliability tests. We will give an outlook on the power scaling for a future wind LiDAR mission.
11983-20
Author(s): Riina Ulkuniemi, Ilpo Suominen, Riina Hietikko, Ville Vilokkinen, Jari Sillanpää, Petteri Uusimaa, Modulight, Inc. (Finland)
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Individually addressable laser diode arrays (IABs) have been successfully demonstrated already in the 90’s. These laser arrays are typically working at 8xx nm and 9xx nm wavelengths. Also individually addressable laser diode arrays operating in visible region has been reported. In this work we report the state-of-the-art high brightness individually addressable diode laser arrays, that are giving new possibilities for traditional applications, like printing, and addressing the new requirements of the novel applications. Our new flexible individually addressable array designs enable dense device pitching, varying from 20µm to 100µm. Power levels up to 60mW per laser emitter enable high brightness solutions. The IABs show excellent uniformity and stable long-term operation.
11983-21
Author(s): Agnieszka Pietrzak, Martin Zorn, Ralf Huelsewede, Juergen Sebastian, Jens Meusel, Sebastian Seidel, Marco Koschorreck, JENOPTIK Optical Systems GmbH (Germany)
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The latest results on currently developed high-power high-efficiency laser bars emitting at 760nm for aesthetic applications are presented. Different epitaxial laser structures processed into laser bars with 1.5mm cavity length and 50% fill-factor were investigated experimentally and the laser-operation limits are discussed. The developed laser bars operate at 90W (CW operation) and 250W (pulsed operation) with 60% electro-optical efficiency, hence comparable to the performance of Jenoptiks 808nm-bars. Moreover, a reliable CW operation at 70W for more than 3000h as well as 60 Mshots at 90W (long pulse at high junction temperature operation) are verified.
11983-22
Author(s): Marc T. Kelemen, Jürgen Gilly, Patrick Friedmann, Sascha A. Hilzensauer, DILAS Semiconductor (Germany)
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We demonstrate (AlGaIn)(AsSb)-based diode lasers with <40° fast axis (FWHM) at different wavelengths between 1900 and 2300nm, grown on 3-inch substrates by MBE. Single emitters as well as laser arrays have been fabricated using optical lithography and ICP etching, packaged by soft or hard soldering. Depending on the resonator design and the wavelength, these single emitters offer up to 1.7W in cw operation and more than 3W in quasi-cw operation with efficiencies well beyond 25% and with demonstrated lifetime. For even higher power levels linear arrays of 20 broad area emitters offer up to 20W output power.
Session 6: Laser Sources for LIDAR: Joint Session with 11982 and 11983
Session Chairs: Alexei L. Glebov, OptiGrate Corp. (United States), Erik Zucker, Erik Zucker Consulting (United States)
11982-4
Author(s): Evan R. Hale, Moran Chen, Bruce McIntosh, Joe Hansell, Khoa Le, Slava Litvinovitch, Nicholas Sawruk, Fibertek, Inc. (United States)
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A compact, lightweight, laser transmitter using space-qualified heritage oscillator from the currently on-orbit ICESat-2 transmitter was built and tested. The Nd:YVO4 oscillator’s cavity length was reduced by 30% and achieved an intermediate 1064 nm energy of ~180 µJ. Final 532 nm output performance after external cavity frequency doubling and beam shaping showed pulse energies >80 µJ and pulse widths < 1 ns. The system was engineered and packaged for an overall dimension of 5.4” L x 3.1” W x 4.1” H and a total mass <1.5 kg. The laser housing and optics were hermetically sealed for contamination control to reduce laser damage and improve reliability. Environmental testing was done, and this packaging design is intended for future space-qualified operation.
11982-5
Author(s): Paul O. Leisher, Jenna Campbell, Michelle Labrecque, Kevin McClune, Elliot Burke, Daniel Renner, Leif Johansson, Milan Mashanovitch, Freedom Photonics, LLC (United States)
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Recent advancements in diffraction-limited output from tapered diode laser amplifiers represent a disruptive technology breakthrough that is poised to revolutionize the LIDAR market. Output powers which were previously only achievable using doped fiber, glass, or crystal laser architectures are now possible directly from the semiconductor chip. For example, diffraction-limited an output power of just a few watts at 1550 nm is sufficient for continuous wave frequency modulated (FMCW) automotive LIDAR. We report here a new world record of >3.0 W output power with nearly diffraction-limited beam quality (M^2 ~1.2) from a 1550 nm tapered diode laser amplifier; this source is suitable for direct use in numerous LIDAR and remote sensing applications.
11983-23
Author(s): Sidi Aboujja, Daniel Chu, David Bean, SemiNex Corp. (United States)
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We present a triple junction high power laser diode at 1550nm based on AlInGaAs/InP material systems. The edge-emitting monolithic structure with tunnel junction layers is designed to reduce stress and improve heat dissipation. Each tunnel junction is formed with an n-type InGaAs layer and a p-type InGaAs layer. The device achieves over 100W peak optical power at 100A, three times more than a single junction laser, at 1W/A slope efficiency with 10 nsec pulse width. In long range LiDAR benchmark, by considering eye safety standards, distance, target reflectivity, and atmospheric loss, with 80 times more in photon budget a 1550nm triple junction can outperform 905nm by 60 times in SNR and 24 times in detection probability at a distance more than 200m.
11983-24
Author(s): Topi Uusitalo, Jukka Viheriälä, Heikki Virtanen, Santeri Hanhinen, Jari Lyytikäinen, Mircea Guina, Tampere Univ. (Finland)
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High peak power and brightness eye-safe lasers are desired in automotive LIDAR, for example. We address this need by developing tapered ridge waveguide lasers with highly asymmetric InGaAsP/InP epilayer emitting at around 1.5 µm wavelength. The structure allows state-of-the-art peak power of 7.3 W at 50 A current. Preliminary beam quality results indicate that the epi-design enables higher beam brightness than more traditional structures when driven with high amplitude current pulses. Results indicate that further improvements in power and brightness characteristics are possible with more optimized cavity layout and laser driver design.
Session 7: Advanced Packaging Solutions for Laser Diodes: Joint Session with Conferences 11982 and 11983
Session Chairs: Paul O. Leisher, Freedom Photonics, LLC (United States), Robert Martinsen, nLIGHT, Inc. (United States)
11983-25
Author(s): Tobias Könning, Sandra Ahlert, Jan Weimar, Ruth Steinborn-Knuth, Florian Ahnepohl, Heiko Kissel, Felix Stützer, Bernd Köhler, Markus Klein, DILAS Diodenlaser GmbH (Germany); Guoli Liu, Sami Lehkonen, Coherent, Inc. (United States)
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Requirements in defense applications differ from those in industrial environments. We present new high power fiber coupled diode laser modules optimized for defense applications. Modules of both, the Coherent FACTOR series based on single emitters, and the Coherent T-Bar series based on mini bars are shown. Wavelengths include 793 nm for Thulium laser pumping and 976 nm for Ytterbium fiber laser pumping. Power levels between 100 W and 600 W of output power are presented. Compared to industrial FACTOR series modules, these devices are optimized for highest output power and low weight compared to their industrial counter parts.
11983-26
Author(s): Jenny Gallery, Indium Corp. (United States)
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Thermal requirements of semiconductor laser technologies often mandate the use of a high-melting, die-attach solder. 80Au20Sn is a great choice to ensure good performance and reliability due to its eutectic melting point of 280°C. One of the most highly demanded applications for 80Au20Sn is in semiconductor laser die-attach due to recent advancements that have made lasers an economical option for a multitude of new products. 80Au20Sn is commonly used with high output lasers because of its good thermal conductivity; high sheer, yield, and tensile strength; excellent wettability; and resistance to corrosion.
11983-27
Author(s): Jianwu Ding, Yiming Liu, Xianming Zhang, Xi Wei, Fang Gao, GW Laser Technology LLC (China)
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A novel pump LD wavelength stabilizing technology that enables high power industrial fiber laser maintaining high optical-to-optical efficiency in a wide rang of cooling and ambient temperatures is developed and tested. Passively in nature, this unique cooling device utilizes near zero power consumption.
11982-2
Author(s): ChangXuan Li, Zhenhui Jia, Focuslight Technologies, Inc. (China)
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Usually, laser diode(LD)package use hard solder(always AuSn)to avoid invalid caused by thermal fatigue in Hard Pulse condition. However, conductive cooling LD has to add submount between chip and cooler to match CTE if hard solder was adopted. So that this package type easy suffer LD chip damage because of stress. And this package structure will increase LD thermal resistance therefore LD could not work continuously and steadily in high power mode. This article we adopted a kind of new package technology that LD chip could attached heat sink directly without submount. LD thermal resistance could decrease to 0.19K/W, output power achieve 300W under continuous wave(CW) mode 260A electric current, thermal-rollover 480W under CW 500A. Especially, LD could endure a hash hard pulse condition (300A 300ms 1Hz) and work reliably for a long term.
11982-3
Author(s): Jack Chen, Juan Li, Min Shi, Xiaopei Dong, Fuying Li, Weirong Guo, Baohua Wang, Shengran Li, Chao Lang, Fangjunyue Guo, BWT Beijing Ltd. (China)
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BWT introduced the idea of dense spatial beam combination (DSBC) and experimentally realized kW level pump source. Currently, output power from a single emitter has reached 15W~30W at BPP of 5~12mm*mrad and electro-optical efficiency>60%, this makes it possible for fiber coupled high power pump source to reduce size and weight, increase electro-optical efficiency, while maintain a high brightness output. With available chips, BWT achieved 420W output locked at 976nm from a fiber of 135μm core diameter and NA0.22, with net weight less than 500g. Also a 1000W output at 976nm (or 915nm) from a 220μm core diameter 0.22NA fiber is obtained with net weight little more than 400g without wavelength beam combination. In the future, with increasing diode chip brightness and electro-optical efficiency, small weight and high power pump source will have an important role in small size and high power fiber laser source, and become an active driver for defence and industrial applications.
Session 8: Blue Laser Diodes and Applications
Session Chair: Stefan W. Heinemann, Aurora Innovation, Inc. (United States)
11983-28
Author(s): Masaya Nakazumi, Atsushi Oguri, Yuta Ishige, Furukawa Electric Co., Ltd. (Japan); Ryotaro Konishi, Tsuyoshi Hirao, Nichia Corp. (Japan); Takagi Takeshi, Nobuyasu Matsumoto, Naoki Hayamizu, Masamitsu Kaneko, Naoki Tsukiji, Furukawa Electric Co., Ltd. (Japan)
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We previously reported the hybrid laser system with blue and near-infrared fiber lasers for copper welding. Blue light with high absorption of copper generates stable molten pool and assists fiber laser in realizing uniform welding and less spattering during the process. We have increased the blue and near-infrared powers from the system for faster or thicker copper welding. The powers from blue laser diode modules in the system are raised by increasing the power of semiconductor laser diodes and increasing number of the laser diodes in the module. Copper welding characteristics using the hybrid laser system would be also discussed.
11983-29
Author(s): Alessandro Mirigaldi, Politecnico di Torino (Italy); Martina Riva, Alitec S.r.l. (Italy); Giulia Pippione, Convergent Photonics (Italy), Prima Electro S.p.A. (Italy); Roberto Paoletti, Convergent Photonics (Italy), Prima Electro S.p.A. (Italy); Guido Perrone, Politecnico di Torino (Italy)
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The paper describes the latest advancements in the blue diode laser modules presented in last year Conference. These modules rely on the same platform and assembly lines of more common 9xx nm fiber coupled modules to obtain compact, high brightness, high reliability and highly manufacturable devices. The new member of the family exploits spatial, polarization, and spectral combining of wavelength stabilized chips to deliver up to 180 W in a 50 um core - 0.22 numerical aperture fiber, with a BPP of only 4.25 mm·mrad.
11983-30
Author(s): Mathew Finuf, NUBURU, Inc. (United States)
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This paper will discuss the integration of blue lasers into an M100 EOS additive manufacturing system. The tests were performed with three very different laser systems: the AI-150 (150 Watts, 5mm-mrad), AO-650 (650Watts – 30 mm-mrad) and HBL-300 (300Watts - 5 mm-mrad). Test articles were printed with SS316L powder and a variety of Copper and pure Copper powders. A summary of the integration of these lasers into and EOS M100 machine along with the test results will be discussed.
11983-31
Author(s): Giulia Pippione, Simone Codato, Claudio Coriasso, Fulvio Gaziano, Paola Gotta, Alberto Maina, Pier De Melchiorre, Giancarlo Meneghini, Giuliana Morello, Ezio Riva, Marzia Rosso, Alessandro Stano, Roberto Paoletti, Paolo Sanna, Convergent Photonics (Italy); Alessandro Mirigaldi, Valentina Serafini, Guido Perrone, Politecnico di Torino (Italy); Martina Riva, Alitec S.r.l. (Italy)
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Blue laser diode sources, when featuring high brightness, compactness and low cost-per-watt, are extremely attractive for material processing of high reflective materials such as copper and gold. A family of blue laser multi-emitter modules has been developed, relying on a proprietary architecture of spatial and polarization multiplexing. By using the same platform and assembly lines of similar 9xx nm modules, is achieving an unprecedented low SWaP (Size Weight and Power consumption), high brightness and cost reduction. Present realization demonstrated power in excess of 100 W on 100 um core fiber, by an extremely compact (54 mm x 140 mm x 15 mm) laser source
11983-32
Author(s): Markus Baumann, Matthias Ackermann, Anne Balck, Tobias Bonhoff, Oleg Botter, Robert Lange, Sören Marfels, Deepak Dinakaran, Arnd Kösters, Volker Krause, Laserline GmbH (Germany)
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In the past few years, the output powers of blue fiber-coupled diode lasers have increased from several hundred watts to 2000 W in 2020. As part of the research project “FoulLas”, funded by the German Federal Ministry for Economic Affairs and Energy (BMWi), Laserline developed a cw fiber-coupled diode-laser exceeding 2 kW blue laser power for fouling removal of vessels and submarine structures. Concepts and results of power increase beyond 2 kW for a fiber-coupled blue diode-laser will be presented. In addition, new findings on degradation and lifetime are reported and insights into fouling removal with blue lasers are given.
11983-33
Author(s): Bien Chann, Francisco J. Villarreal, Wang-Long Zhou, John Roethle, Abraham Wong-Guiterrez, Matthew Sauter, Christopher Halle, Shinya Domoto, Bryan Lochman, TeraDiode, Inc. (United States)
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Blue High-Power/High-Brightness Direct Diode Lasers are rapidly evolving as one of the preferred laser technologies for processing highly reflective materials. This paper focuses on the recent advances applying Wavelength Beam Combining (WBC) technology to diode bars emitting in the 445nm region to demonstrate the power scalability with high beam qualities only achievable using WBC technology. We’ll present our latest developments including 400W Blue lasers coupled with fiber diameters ≤50um. We will also show results of combining multiple laser modules to scale powers to multi-KW levels with fiber diameters ≤ 100um. Finally, we will discuss the future of this technology.
LASE Plenary and Hot Topics
In person: 24 January 2022 • 3:30 PM - 6:00 PM PST
11994-501
Author(s): Tammy Ma, Lawrence Livermore National Lab. (United States)
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This past August, a record-breaking shot with 1.3 megajoules of fusion yield was achieved on the National Ignition Facility (NIF) at Lawrence Livermore National Laboratory. This experimental result, decades in the making, is a significant breakthrough for laser-driven inertial fusion. This talk will review the experimental results, the photonics advancements and many more technologies that made this breakthrough possible, and the implications for future research. Furthermore, these recent game-changing results on the NIF now lay the groundwork to explore laser inertial fusion as a path for clean energy and energy security.
11985-601
Author(s): Clara J. Saraceno, Ruhr-Univ. Bochum (Germany)
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High-power ultrafast laser technology has seen extremely fast-paced progress in the last decades, giving momentum to many fields. Nowadays, laser systems delivering hundreds of watts to kilowatts of average power with pulse energies ranging from microjoules to hundreds of millijoules become increasingly available, based on fiber, slabs and disk laser geometries. In this talk, we will discuss a recent hot topic enabled by progress in high-power ultrafast laser sources, that is the demonstration of table-top sources of few-cycle THz radiation with extremely high average power – reaching a performance level which was so far restricted to accelerator facilities. We will discuss new possibilities opened by these unique sources both in research and applied fields.
11990-502
Author(s): Michael Kues, Leibniz Univ. Hannover (Germany)
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Today’s quantum technology relies on the realization of large-scale non-classical systems in practical formats to enable quantum-accelerated computing, secure communications and enhanced sensing. Optical on-chip quantum frequency combs, characterized by many equidistantly spaced frequency modes, allow the storage of large amounts of quantum information. The combination with control techniques, using accessible state-of-the-art telecommunications infrastructure, can constitute a powerful frequency-domain quantum circuit with new functionalities and represents an approach towards realizing practical large-scale controllable quantum systems. In this presentation, we will review approaches for the efficient realization of quantum frequency combs in on-chip waveguide structures and micro-resonators. We will show their applicability for the realization of quantum systems with considerably enhanced complexity, particularly generating and manipulating on-chip multi-photon and high-dimensional quantum states as well as discrete high-dimensional cluster states, laying at the basis of measurement based-quantum computing. Building on this, the realization of frequency-domain Hong-Ou-Mandel interference of independent photons, fundamental to quantum information processing, as well as an outlook on frequency-domain circuits will be discussed.
11991-602
Author(s): Jennifer A. Dionne, Stanford Univ. (United States)
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We present a new platform for sensitive molecular detection and control spanning 1) multiplexed genetic and proteomic screening, 2) single-cellular bacterial identification and drug susceptibility testing, and 3) chiral molecular synthesis and separation, based on high-quality-factor phase gradient metasurfaces. The high-quality factor of our metasurfaces produces a large amplification of the electromagnetic field, increasing the response to targeted binding of biomarkers. Simultaneously, the optical signal is beam-steered for multiplexed detection. We develop these metasurfaces for a new respiratory panel of SARS-CoV-2, RSV, and influenza; Raman-based identification and antibiotic susceptibility testing of pathogens; and sensitive identification and purification of chiral molecules including amino acids and small-molecule pharmaceuticals and agrochemicals.
11988-603
Author(s): Andrés Fabián Lasagni, TU Dresden (Germany), Fraunhofer-Institut für Werkstoff- und Strahltechnik IWS (Germany)
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Laser-microtextured surfaces have gained an increasing interest due to their enormous spectrum of applications and industrial scalability. In this frame, several research studies have demonstrated how laser-based fabrication methods can be used to produce functional surfaces. Furthermore, it has been demonstrated is many cases, that the combination of structures with feature sizes in different ranges (e.g., microelements decorated with nanostructures) can not only further enhanced specific functions but also to provide surfaces with several functionalities. In this context, this talk shows how Direct Laser Interference Patterning (DLIP), Direct Laser Writing (DLW) and Laser Induced Periodic Surface Structures (LIPSS) can be combined, reaching advanced functionalities on technological relevant materials.
Posters-Tuesday
In person: 25 January 2022 • 6:00 PM - 8:00 PM PST
Conference attendees are invited to attend the LASE poster session on Tuesday evening. Come view the posters, enjoy light refreshments, ask questions, and network with colleagues in your field.

Poster Setup: Tuesday 10:00 AM – 5:00 PM
View poster presentation guidelines and set-up instructions at
https://spie.org/PW/Poster-Guidelines
11983-34
Author(s): Yunzhu Chen, Junli Li, Tuanwei Fu, Yanfang Zheng, Lichen Sun, Sicheng Zhao, Chung-en Zah, Xingsheng Liu, Focuslight Technologies, Inc. (China)
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A high peak power, long pulse width and hard-solder based macro-channel G-Stack diode laser was developed. In terms of performance, the laser stack can work at 200W/bar with pulse width 10ms and 120W/bar with pulse width 30ms. Besides, stress release structure was applied to reduce the crack risk of laser bars. Regarding to structure, the compact product adopts 5-bar modules as a unit, which can be used easily extended to achieve power scale-up and beam spot expansion. Finally, the product can be convenient to maintain due to low water quality requirements.
11983-35
Author(s): Lukas Traxler, Christian Kapeller, Laurin Ginner, Simon Breuss, Ernst Bodenstorfer, AIT Austrian Institute of Technology GmbH (Austria)
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This work demonstrates how high-power diode lasers can be used as illumination source for fast inline 3D imaging for large volume roll-to-roll manufacturing applications in combination with multi-line-scan cameras. To complement 2D acquisitions, multiple illumination directions are acquired by time multiplexing. Time delay integration (TDI) is extended for multiple independent illumination directions to reduce laser speckle, and increase signal to noise ration and dynamic range. We show how the proposed method outperforms conventional LED based photometry acquisition systems in terms of speed, cost and integration size.
11983-36
Author(s): David M. Pai, Bright Beam Technologies LLC (United States)
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This paper describes a method which opens up the chip thickness for increasing VCSEL power. The method uses multiple gain layers, powered in parallel electrically through embedded electrodes. Compared to a standard VCSEL, the structure leads to higher power, lower resistive loss, higher device speed, higher beam quality, and fewer number of DBR layers. The method is protected by a US patent issued in August 2021.
Conference Chair
NUBURU, Inc. (United States)
Conference Chair
Erik Zucker Consulting (United States)
Program Committee
FriBa LaserNet Consulting (Germany)
Program Committee
Ferdinand-Braun-Institut (Germany)
Program Committee
Aurora Innovation, Inc. (United States)
Program Committee
Laserline GmbH (Germany)
Program Committee
nLIGHT, Inc. (United States)
Program Committee
Fujikura Ltd. (Japan)
Additional Information