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Light-emitting devices (LEDs) have been evolving as the dominant light source in mobile phones, displays, automobiles, and now also general lighting. The availability of devices emitting not only in the full visible color range including white, but also in ultraviolet and infrared, enables a variety of exciting applications.

Novel materials and device architectures combined with increasingly sophisticated manufacturing processes promise low-cost solid-state light sources with high efficiency and luminous flux. With the recent advances in efficiency, radiance, output power, and white quality, LEDs are now dominating conventional lighting technologies in virtually all areas of lighting including the huge general lighting market. Looking forward, LED technology is well positioned to disrupt other markets such as displays, automobiles, visible light communications, water and air purification, sanitization, projection, bio sensing, sensors for internet of things (IoT), and lighting for health, amenity, medical diagnostics, and urban farming.

The objective of this conference is to bring together scientists and engineers working on material and device aspects as well as manufacturing and application aspects of LEDs for illumination, information, and beyond, and to review the current state of the art, development trends, and outlooks in efficiency, spectral quality, reliability, brand new emerging applications and other relevant factors. Theoretical and experimental papers will include, but not be limited to the following areas:

UV and DUV LEDs and Their Applications NIR/IR Emitting Devices LEDs for AR/VR/MR/XR Light-based Sensors and Communication LED Applications and Solid-State Lighting Emerging Electroluminescent Semiconductor Materials and Devices Wavelength Conversion Materials and Components Technologies for LED Design and Fabrication Measurements and Characterizations for LED Materials and Devices Efficiency Challenges in III-Nitride LEDs LED Manufacturing Substrates for LED Epitaxial Growth Submounts for LED Mounting Quantum-Dot-based LEDs Nanomaterials and Nanostructures for LEDs ;
In progress – view active session
Conference 12441

Light-Emitting Devices, Materials, and Applications XXVII

30 January - 1 February 2023 | Moscone Center, Room 153 (Upper Mezzanine South)
View Session ∨
  • OPTO Plenary Session
  • 1: Micro LEDs and AR/VR/MR/XR I
  • 2: UV Emitters I
  • 3: LED Growth and Applications I
  • 4: UV Emitters II
  • 5: Light-Based Sensors and Communication
  • 6: Micro LEDs and AR/VR/MR/XR II
  • 7: LED Growth and Applications II
  • 8: Emerging Electroluminescent Semiconductor Materials and Devices
  • 9: Boron Nitrides
  • 10: Nanomaterials and Nanostructures for LEDs
  • 11: Measurements and Characterizations for LED Materials and Devices
  • Posters-Wednesday
OPTO Plenary Session
30 January 2023 • 8:00 AM - 10:00 AM PST | Moscone Center, Room 207/215 (Level 2 South)
8:00 AM - 8:05 AM: Welcome and Opening Remarks
Sonia García-Blanco, Univ. Twente (Netherlands) and Bernd Witzigmann, Friedrich-Alexander-Univ. Erlangen-Nürnberg (Germany)

8:05 AM - 8:15 AM: Announcement of the OPTO AI/ML and Net Zero Best Paper Awards
12424-501
Author(s): Rajeev Ram, Massachusetts Institute of Technology (United States)
30 January 2023 • 8:15 AM - 8:50 AM PST | Moscone Center, Room 207/215 (Level 2 South)
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The last 36 years has seen a steady increase in the deployment of photonic integrated components. Over most of this history, the development of integrated photonic systems in both III-V and Group IV materials has been driven by the needs of fibre optic systems – driven primarily by the properties of the transmission media (single-mode vs multi-mode fibre, fibre gain, etc). Today, photonic integration is increasingly driven by the unique properties of high-performance electronic-photonic interfaces. The low-capacitance, low-energy, high-bandwidth density of photonic integrated systems is now driving optical interconnection into board-scale, chip-scale, and intra-chip photonic systems. Here, we consider new applications ranging from (1) deep learning systems and other data intensive classical compute applications, (2) optically addressed quantum computing fabrics – with tremendous progress being made today in the area of trapped-ion quantum computing, and (3) next-generation brain-computer interfaces where photonics may play an important role in massively parallel signal detection.
12416-501
Author(s): Emily L. Warren, National Renewable Energy Lab. (United States)
30 January 2023 • 8:50 AM - 9:25 AM PST | Moscone Center, Room 207/215 (Level 2 South)
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Tandem or multijunction photovoltaic devices cells offer the clearest path to high efficiency and high areal energy density solar energy conversion. Theoretically and at the laboratory scale, increasing the number of junctions is a simple way to maximize the amount of electricity that can be produced from a small-area device. However, there are multiple approaches to electrically and optically interconnecting the sub-cells in a tandem stack that have different trade-offs in terms of efficiency, cost, and manufacturability. Three terminal (3T) tandems have attracted a great deal of interest at the laboratory scale for their high potential efficiencies and polarity-changing interconnections. However, the coupled nature of 3T devices adds a degree of complexity to the devices themselves and the ways that their performance can be measured and reported. In this talk, I will discuss the recent progress in the field of 3T tandems, including our recently proposed taxonomy for naming 3T devices, experimental demonstrations, robust measurement approaches, and interconnecting 3T cells into strings.
12421-501
Author(s): Nicolas Grandjean, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
30 January 2023 • 9:25 AM - 10:00 AM PST | Moscone Center, Room 207/215 (Level 2 South)
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III-nitride semiconductors (GaN and related alloys) triggered the 21st century lighting revolution thanks to the achievement of blue LEDs exhibiting remarkable performance, e.g., a wall-plug efficiency of 80%. Another striking feature of those compound semiconductors is their capability of covering the whole visible spectrum when alloying GaN with indium. De facto, a single material platform could be used to make RGB displays based on direct light emission. In addition, InGaN alloy - which is behind all blue and green LEDs- exhibits strong alloy disorder, which is highly beneficial for micron-size LEDs thanks to reduced carrier diffusion length. In this talk, I will first present the current understanding of the physics of blue LEDs. This will bring me to the question of the “green-gap” and its relevance in light of recent results reported on InGaN red LEDs. Eventually, I will discuss challenges and opportunities offered by III-nitrides for RGB microLED displays.
Break
Coffee Break 10:00 AM - 10:30 AM
Session 1: Micro LEDs and AR/VR/MR/XR I
30 January 2023 • 10:30 AM - 12:20 PM PST | Moscone Center, Room 153 (Upper Mezzanine South)
Session Chair: Michael R. Krames, Arkesso, LLC (United States)
12441-1
Author(s): Yun-Li Li, PlayNitride Inc. (Taiwan)
30 January 2023 • 10:30 AM - 11:00 AM PST | Moscone Center, Room 153 (Upper Mezzanine South)
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Micro-light-emitting diode (microLED) display technology has drawn a lot of attention in display industry recently owing to the superior optical and electrical properties. Compared to conventional display technologies, microLED display demonstrates higher efficiencies, longer lifetime, much higher brightness, ultra-high pixel densities, faster response time and larger color gamut. In this work, the microLED display production technology, including high-efficiency microLED chip process and novel inspection technologies are discussed. At the same time, microLED display for various applications are demonstrated. Finally, challenges to achieve commercialization of microLED display are also analyzed.
12441-2
Author(s): Zhaoxia Bi, Lund Univ. (Sweden), Hexagem AB (Sweden); Jovana Colvin, Hexagem AB (Sweden), Lund Univ. (Sweden); Anders Gustafsson, Rainer Timm, Reine Wallenberg, Bo Monemar, Lund Univ. (Sweden); Mikael Björk, Hexagem AB (Sweden); Lars Samuelson, Lund Univ. (Sweden), Hexagem AB (Sweden), Southern Univ. of Science and Technology of China (China)
30 January 2023 • 11:00 AM - 11:30 AM PST | Moscone Center, Room 153 (Upper Mezzanine South)
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III-Nitride based light-emitting diodes based on InGaN active layers formed on GaN, are fine for the blue and green emitting LEDs. However, the large lattice mis-match between red-emitting active layers and the GaN substrate still limits the efficiencies to very low values, typically <5%. We propose to use seeding techniques originally developed for nanowire growth, to seed the formation of ternary InGaN pyramids which later are converted to thin c-facet platelets of InGaN. I will in this presentation show that such relaxed, and dislocation-free, InGaN platelets with In-composition about 20%, have the potential as ideal templates for red-emitting microLEDs. Of special significance is the fact that our technology provides all three RGB microLED sources with one and the same InGaN technology, and with the same efficiency and with the maintained efficiency down to pixel sizes of just 1-2 µm in diameter.
12441-3
Author(s): Ho Jin Lee, Seok Hee Hong, Korea Univ. (Korea, Republic of); Wanqi Ren, Korea Univ. (China); Nahyun Kim, Hwi Geun Kim, Tae Ho Kim, Tae Geun Kim, Korea Univ. (Korea, Republic of)
30 January 2023 • 11:30 AM - 11:50 AM PST | Moscone Center, Room 153 (Upper Mezzanine South)
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In this study, a powerful and efficient approach to fundamentally overcome the issue of PM and AM micro-LED array is presented using resistive-switching memristor. The proposed resistive-switching memristor is applied as a switching electrode in PM micro-LED array, and a substitute for both driving transistor and capacitor in AM micro-LED array. As a result, i) the crosstalk issue is eliminated by blocking hole injection in PM micro-LED array; and ii) a compact design of AM micro-LED array with stable interconnection is successfully realized. More detailed results will be presented at the conference.
12441-65
Author(s): Rachel A. Oliver, Univ. of Cambridge (United Kingdom)
30 January 2023 • 11:50 AM - 12:20 PM PST | Moscone Center, Room 153 (Upper Mezzanine South)
Break
Lunch Break 12:20 PM - 1:50 PM
Session 2: UV Emitters I
30 January 2023 • 1:50 PM - 4:10 PM PST | Moscone Center, Room 153 (Upper Mezzanine South)
Session Chair: Siddharth Rajan, The Ohio State Univ. (United States)
12441-4
AlGaN and BN Far UV-C LEDs (Invited Paper)
Author(s): Zetian Mi, Univ. of Michigan (United States)
30 January 2023 • 1:50 PM - 2:20 PM PST | Moscone Center, Room 153 (Upper Mezzanine South)
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To date, it has remained extremely challenging to achieve high efficiency far UV-C LEDs. In this talk, I will present an overview of some recent advances of nanoscale and quantum engineering of III-nitride heterostructures that are relevant for the development of far UV-C LEDs. The epitaxy, structural, optical, electrical, and excitonic properties of Al(Ga)N nanostructures and monolayer hBN will be presented. Improved design of UV-C and far UV-C optoelectronics, including the incorporation of tunnel junction, electron blocking layers and photonic crystals, will be presented, followed by discussions on the performance characterization of Al(Ga)N and hBN based far UV-C LEDs.
12441-5
Author(s): Stefan Schulz, Tyndall National Institute (Ireland), Univ. College Cork (Ireland)
30 January 2023 • 2:20 PM - 2:50 PM PST | Moscone Center, Room 153 (Upper Mezzanine South)
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Semiconductor heterostructures utilizing the III-N material aluminium nitride (AlN) have attracted significant interest for optoelectronic device applications in the ultraviolet (UV) spectral range. We will discussion the impact of alloy fluctuations on the electronic and optical properties of (Al,Ga)N and (Al,In)N materials by means of atomistic theoretical studies. Moreover, we present a theoretical analysis of the impact of random alloy fluctuations on the electronic and optical properties of c-plane (Al,Ga)N/AlN quantum wells. Finally, we will give an outlook for potential ways to tailor the electronic and optical properties of UV light emitters by utilizing for instance boron containing III-N alloys.
12441-6
Author(s): Jianping Zhang, Ling Zhou, Ying Gao, Alexander Lunev, Shuai Wu, Bolb, Inc. (United States)
30 January 2023 • 2:50 PM - 3:20 PM PST | Moscone Center, Room 153 (Upper Mezzanine South)
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We report high power UVC LED performance especially the junction-temperature dependent optical-output-power behavior. We demonstrate that the optical-output-power junction-temperature dependence can be used to obtain the LED light extraction efficiency, and hence find out that the light extraction efficiency for UVC LEDs is still low (≤16%) even for transparent epitaxy structures. This points to a big headroom for the efficiency improvement of UVC LEDs, which mainly lies in the light extraction aspect. We will also discuss another important aspect of UVC LEDs, which is the operating lifetime. We discovered that the LED lifetime is mainly determined by the initial defect density and the defect generation interest rate. Junction temperature can affect the initial defect density through an exponential function with a thermal activation energy, and the defect generation interest rate is proportional to the square of the current density. High-efficient, long lifetime UVC LEDs can be realize
12441-7
Author(s): Emmanouil Kioupakis, Univ. of Michigan (United States)
30 January 2023 • 3:20 PM - 3:50 PM PST | Moscone Center, Room 153 (Upper Mezzanine South)
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In this talk, I will discuss results from atomistic calculations that uncover the mechanisms that limit the efficiency of UV light emitters and predict excitonic heterostructures with improved efficiency. In particular, I will show how Fermi-level control during the growth of p-type AlGaN contacts can promote acceptor incorporation and decrease charge compensation, increasing the electrical conductivity. I will also discuss the detrimental role of statistically random alloy disorder in AlGaN to the efficiency of carrier transport and recombination. Alternatively, we propose atomically thin GaN/AlN superlattices and quantum wells as a mechanism to improve the carrier mobility and to form stable excitons at room temperature that increase the radiative recombination rate. I will also discuss how the integration of hexagonal BN with nitride heterostructures is a promising material to realize efficient excitonic UV light emitters despite its indirect band gap.
12441-8
Author(s): Nicola Trivellin, Francesco Piva, Matteo Buffolo, Carlo De Santi, Enrico Zanoni, Gaudenzio Meneghesso, Matteo Meneghini, Univ. degli Studi di Padova (Italy)
30 January 2023 • 3:50 PM - 4:10 PM PST | Moscone Center, Room 153 (Upper Mezzanine South)
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UVC LED emitters have found important scope in the disinfection of bacteria and viruses. With this work we report on the reliability of commercial UVC LEDs with different wavelengths as a function of the driving current and the effect of lifetime on the system design. The reliability of commercial UVC LEDs by means of electrical, optical and spectral resolved measurements has been evaluated in our work. We then carried out stress tests at increasing driving current in order to define the acceleration effect of the current on the device reliability. By defining a current dependent degradation model, we identified the optimal operating condition to balance the number of disinfection cycles and their duration.
Break
Coffee Break 4:10 PM - 4:40 PM
Session 3: LED Growth and Applications I
30 January 2023 • 4:40 PM - 6:10 PM PST | Moscone Center, Room 153 (Upper Mezzanine South)
Session Chair: Jong Kyu Kim, Pohang Univ. of Science and Technology (Korea, Republic of)
12441-9
Author(s): Koh Matsumoto, Kazuki Ohnishi, Hiroshi Amano, Nagoya Univ. (Japan)
30 January 2023 • 4:40 PM - 5:10 PM PST | Moscone Center, Room 153 (Upper Mezzanine South)
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Until recently, lack of stable p-type doping in HVPE hindered its use to the application of III-nitride light emitting devices. Recently, K. Ohnishi discovered the stable MgO source for p-type doping in GaN HVPE. This has enabled us to use HVPE for light emitting devices as well as electron devices such as vertical MOSFET. In this article, we will discuss the prospects of III-nitride HVPE in terms of epitaxial layer design as well as the remaining issues of a strong parasitic reaction.
12441-10
Author(s): Rudy Parekh, Bumjoon Kim, Soo Min Lee, Swaminathan Srinivasan, Drew Hanser, Anil Vijayendran, Veeco Instruments Inc. (United States)
30 January 2023 • 5:10 PM - 5:40 PM PST | Moscone Center, Room 153 (Upper Mezzanine South)
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MicroLEDs are making rapid progress as the next generation display technology due to high brightness, higher power efficiency and better contrast as compared to existing LCD and OLED based display technologies. MicroLEDs are being introduced into large displays and smart watches and are expected to penetrate other display segments including those for AR/VR applications within the next five years. The MOCVD technology needed for GaN based microLEDs must deliver on the industry’s stringent performance requirements of material quality, uniformity and low defectivity while reducing costs via high throughput, yield, and low operating expenses. A large operating process space (in terms of pressure, temperature, and growth rates) is needed for optimization of device stacks, with excellent boundary layer control over the full process range. In this talk, we discuss the latest status of Gallium Nitride based epitaxy for microLEDs using single wafer deposition technology.
12441-11
Author(s): Young Joon Hong, Sejong Univ. (Korea, Republic of)
30 January 2023 • 5:40 PM - 6:10 PM PST | Moscone Center, Room 153 (Upper Mezzanine South)
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Epitaxy is a way of growing single-crystalline thin film devices, initially driven by forming chemical bonds between wafer and epi-layer. Both chemical and physical vapor-phase epitaxy have contributed to manufacturing quantum-functional devices with composition-modulated ultrathin heterostructures. However, the strongly bonded epi-layer/wafer makes it difficult to fabricate highly free-form and multi-functionally integrated high-density devices unless the wafer is easily peeled off. In this talk, we introduce the unconventional epitaxy as a platform for fabricating deformable and densely stackable devices, and share the results of our recent works on van der Waals and remote epitaxy of gallium nitride microrod and thin films for deformable lighting devices and vertical lighting-pixel-stacks. We also discuss the opportunities and challenges of the novel epitaxy for future electronics and display technology.
Session 4: UV Emitters II
31 January 2023 • 8:00 AM - 10:00 AM PST | Moscone Center, Room 153 (Upper Mezzanine South)
Session Chair: Zetian Mi, Univ. of Michigan (United States)
12441-12
Author(s): Kengo Nagata, Toyoda Gosei Co., Ltd. (Japan); Satoshi Anada, Japan Fine Ceramics Ctr. (Japan); Yoshiki Saito, Toyoda Gosei Co., Ltd. (Japan); Maki Kushimoto, Yoshio Honda, Nagoya Univ. (Japan); Tetsuya Takeuchi, Meijo Univ. (Japan); Hiroshi Amano, Nagoya Univ. (Japan)
31 January 2023 • 8:00 AM - 8:30 AM PST | Moscone Center, Room 153 (Upper Mezzanine South)
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To markedly increase output power, high-efficiency deep ultraviolet (UV) LEDs require a UV-light-transparent device structure. We have focused on the development of AlGaN homojunction tunnel-junction (TJ) DUV LEDs. We achieved an operating voltage of 10.8 V and a wall plug efficiency of 0.7 % at a direct current of 63 A/cm2 for the Al0.6Ga0.4N homojunction TJ DUV LED. In addition, we demonstrated the structural optimization of Al0.6Ga0.4N homojunction TJ DUV LEDs by changing the thickness of p+- and n+-AlGaN constituting the TJ to further reduce the operating voltage. The lowest operating voltage of the TJ LED was 8.8 V.
12441-13
Author(s): Motoaki Iwaya, Toma Nishibayashi, Moe Shimokawa, Ryota Hasegawa, Eri Matsubara, Ryoya Yamada, Yoshinori Imoto, Ryosuke Kondo, Ayumu Yabutani, Meijo Univ. (Japan); Sho Iwayama, Meijo Univ. (Japan), Mie Univ. (Japan); Tetsuya Takeuchi, Satoshi Kamiyama, Meijo Univ. (Japan); Hideto Miyake, Mie Univ. (Japan); Kohei Miyoshi, Koichi Naniwae, Ushio Inc. (Japan); Akihiko Yamaguchi, Seishin Trading Co., Ltd. (Japan)
31 January 2023 • 8:30 AM - 9:00 AM PST | Moscone Center, Room 153 (Upper Mezzanine South)
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In recent years, reports on highly efficient UV LEDs and UV laser diodes have been published one after another. Considering the application field of UV semiconductor light-emitting devices, it is essential to achieve high output, i.e., high current density operation, and it is important to establish a fabrication process for vertical devices to realize this. A 1cm square wafer with deep-UV LEDs stacked on a sapphire substrate was successfully separated from the substrate to fabricate vertical LEDs. In this study, an Al0.68Ga0.32N underling layer was formed on an AlN template with periodic pillars, and a process that enables reproducible substrate detachment was successfully developed. The fabricated vertical LEDs successfully exhibit remarkable luminescence characteristics (peak wavelength: 298 nm) up to a current density of ~43 kA cm-2 at room temperature and pulse driving. Applications to high-power ultraviolet region LEDs and laser diodes are expected.
12441-14
Author(s): Songrui Zhao, Qihua Zhang, Mohammad Vafadar, Heemal Parimoo, Xue Yin, McGill Univ. (Canada)
31 January 2023 • 9:00 AM - 9:30 AM PST | Moscone Center, Room 153 (Upper Mezzanine South)
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In this talk, I will discuss using AlGaN nanowires for surface-emitting semiconductor deep UV LEDs at short wavelengths in vertical geometry. I will first show that by using high Al content AlGaN nanowires, devices emitting down to 207 nm can be obtained. The incorporation of polarization engineered layers further improves the device electrical performance significantly, whereas replacing conventional metal top electrode with graphene improves the device optical performance. I will also show in this talk that, by using nanowire template assisted AlN buffer layers, vertical semiconductor deep UV LEDs emitting down to 247 nm can be achieved.
12441-15
Author(s): Agnes Maneesha Dominic Merwin Xavier, Arnob Ghosh, Sheikh Ifatur Rahman, Shamsul Arafin, Siddharth Rajan, The Ohio State Univ. (United States)
31 January 2023 • 9:30 AM - 10:00 AM PST | Moscone Center, Room 153 (Upper Mezzanine South)
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AlGaN-based ultra-violet light emitting diodes (UV LEDs) are promising for a range of applications, including water purification, air disinfection and medical sensing. However, widespread adoption of UV LEDs is limited by the poor device efficiency. This has been attributed to the strong internal light absorption and poor electrical injection efficiency for the conventional UV LED structures, which typically use an absorbing p-GaN layer for p-type contact. Recent development of ultra-wide banggap AlGaN tunnel junctions enabled a novel UV LED design with the absence of the absorbing p-GaN contact layer. In this presentation, we will discuss recent progress of the AlGaN tunnel junctions and the development of tunnel junction-based UV LEDs, and discuss the challenges and future perspectives for the realization of high power, high efficiency UV LEDs.
Break
Coffee Break 10:00 AM - 10:30 AM
Session 5: Light-Based Sensors and Communication
31 January 2023 • 10:30 AM - 12:20 PM PST | Moscone Center, Room 153 (Upper Mezzanine South)
Session Chair: Michael R. Krames, Arkesso, LLC (United States)
12441-16
Author(s): Martin D. Dawson, Jonathan McKendry, Johannes Herrnsdorf, Enyuan Xie, Michael J. Strain, Univ. of Strathclyde (United Kingdom); David Armstrong, Fraunhofer UK Research Ltd. (United Kingdom)
31 January 2023 • 10:30 AM - 11:00 AM PST | Moscone Center, Room 153 (Upper Mezzanine South)
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Micro-LED technology is of great interest currently for new forms of versatile and high-performance electronic visual displays. The micro-scale compound semiconductor (mainly gallium nitride) light emitting diodes on which this technology is based are also showing considerable promise for optical communications, based on their capabilities for Gb/s data modulation rates and their ready deployment in arrays, which facilitates a range of spatial multiplexing and spatial modulation modes of operation. Here we report recent developments in two topical aspects of micro-LED technology. We present results showing data rates of >6Gb/s over 10 meter distances from a single deep-ultraviolet micro-LED and Gb/s wavelength division multiplexing using several micro-LEDs operating at different UV wavelengths. We also present optical camera communication results based on a chip-scale CMOS-driven 128 x 128 micro-LED array projector system capable of projecting binary mask patterns at up to 0.5 Mfps.
12441-17
Author(s): Bardia Pezeshki, Alexander A. Tselikov, Robert F. Kalman, Emad Afifi, AvicenaTech Corp. (United States)
31 January 2023 • 11:00 AM - 11:30 AM PST | Moscone Center, Room 153 (Upper Mezzanine South)
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We demonstrated low energy optical interconnects (0.6pJ/bit at 1e-4 error rate and 1.3pJ at 1E-12) using a custom 32-channel microLED-based optical link with monolithically integrated drivers, photodetectors, and TIAs. Each channel is modulated at 2Gb/s and the signal is carried either via multicore fiber or through free space.
12441-18
Author(s): Klein L. Johnson, Matthew Dummer, ams-OSRAM International GmbH (Germany); Amirhossein Ghods, Karim Tatah, ams-OSRAM International GmbH (United States)
31 January 2023 • 11:30 AM - 12:00 PM PST | Moscone Center, Room 153 (Upper Mezzanine South)
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In this paper we report on recent work at ams-OSRAM on the development of high junction count discrete VCSELs and VCSEL arrays at 905nm and 940nm. Devices with up to 8 junctions are considered, where we have shown very high slope efficiencies of >8W/A, and peak conversion efficiencies approaching 60% at room temperature. Pulsed operation and divergence characteristics of these devices will be discussed along with means to affect control and improvement. Limitations to high temperature operation and reliability results will also be presented.
12441-19
Author(s): Zhuoqun Dai, Max C. Sundermeier, Tobias Glück, Philipp Findling, Roland Lachmayer, Leibniz Univ. Hannover (Germany)
31 January 2023 • 12:00 PM - 12:20 PM PST | Moscone Center, Room 153 (Upper Mezzanine South)
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High-performance LiDAR systems play an important role in autonomous driving by providing a high-resolution 3D representation of the driving environment. However, the emitted irradiant flux of a non-scanning solid-state LiDAR must be distributed to a large number of pixels of a focal plane array detector, which results in a single pixel receiving only a small optical power. To increase the optical power reaching the detector, we propose an optical concept for both the emitter and detector sides of the solid-state LiDAR system based on beam shaping.
Break
Lunch/Exhibition Break 12:20 PM - 1:50 PM
Session 6: Micro LEDs and AR/VR/MR/XR II
31 January 2023 • 1:50 PM - 2:50 PM PST | Moscone Center, Room 153 (Upper Mezzanine South)
Session Chair: Yun-Li Li, PlayNitride Inc. (Taiwan)
12441-20
Author(s): Amélie Dussaigne, Frederic Barbier, Guillaume Veux, Patrick Le Maitre, Helge Haas, Jean-Christophe Pillet, Benjamin Samuel, David Cooper, Carole Pernel, Ilyès Medjahed, Brigitte Martin, Ludovic Dupre, Francois Levy, CEA-LETI (France)
31 January 2023 • 1:50 PM - 2:20 PM PST | Moscone Center, Room 153 (Upper Mezzanine South)
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Full color micro-displays with pixel pitch below 10 µm are needed for augmented and virtual reality applications. Native RGB subpixels should be achieved with the same material family in a monolithic approach. The InxGa1-xN alloy seems to be the best candidate but it should prove its ability to produce efficient red emission. By the combination of the full InGaN structure and the InGaNOS substrate from Soitec, efficient red emission as well as red micro-LEDs were demonstrated. To get monolithically integrated RGB micro-LEDs, an approach based on successive growth steps was implemented. Blue+green subpixels were first obtained on the same substrate.
12441-21
Author(s): Pierre Tchoulfian, Ulrich Steegmueller, Benoit Amstatt, Markus Broell, Philippe Gilet, Aledia (France)
31 January 2023 • 2:20 PM - 2:50 PM PST | Moscone Center, Room 153 (Upper Mezzanine South)
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GaN-on-Silicon nanowire technology is promising for several display applications. Since one of the microLED display major challenges is to drastically reduce the cost, the possibility to downsize the microLED is paramount. Aledia has developed a nanowire microLED technology on large Si wafers which keeps the same blue emission efficiency for <2μm size devices containing only 1 NW as for larger devices containing up to few hundreds of NWs. A RGB integrated pixel relying on this technology is presented where Quantum Dots are used for green and red color conversion. Another nanowire microLED concept for AR/MR applications is also presented where light emission directivity and pixel size downsizing are mandatory.
Break
Coffee Break 2:50 PM - 3:20 PM
Session 7: LED Growth and Applications II
31 January 2023 • 3:20 PM - 5:10 PM PST | Moscone Center, Room 153 (Upper Mezzanine South)
Session Chair: Young Joon Hong, Sejong Univ. (Korea, Republic of)
12441-23
Author(s): Wouter A. Soer, Lumileds, LLC (United States)
31 January 2023 • 3:20 PM - 3:50 PM PST | Moscone Center, Room 153 (Upper Mezzanine South)
12441-24
Author(s): Anne Berends, Seaborough Research B.V. (Netherlands); Marina Giménez, Michelle Luxwolda, Marijke Gordijn, Chrono@Work B.V. (Netherlands); Michael Krames, Seaborough Research B.V. (Netherlands)
31 January 2023 • 3:50 PM - 4:20 PM PST | Moscone Center, Room 153 (Upper Mezzanine South)
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The effects of visible light on our health and well-being are widely known and have led to the emergence of circadian-friendly or ‘human-centric’ lighting. The effects of far-red or near-infrared (NIR) light on our bodies are less known (in the lighting community). These effects, called ‘photobiomodulation’ are mostly employed in specialty or therapeutic devices for wound healing or pain relief. However, a double-blind and placebo-controlled clinical study now shows that photobiomodulation is not only a local effect: generally healthy people that are exposed to NIR light benefit from improved health and well-being. Unfortunately, indoors we are deprived of NIR light as LED-based lamps only emit in the visible spectrum, and most windows block all wavelengths beyond the visible. Consequently, there is a need for NIR light sources that provide people indoors with the right dose of NIR light in an energy-efficient way to improve their health and well-being.
12441-25
Author(s): Tobias Schulz, Leibniz-Institut für Kristallzüchtung (Germany); Liverios Lymperakis, Suyun Yoo, Max-Planck-Institut für Eisenforschung GmbH (Germany); Humberto Foronda, Christian Brandl, Hans-Jürgen Lugauer, Marc Patrick Hoffmann, ams-OSRAM International GmbH (Germany); Martin Albrecht, Leibniz-Institut für Kristallzüchtung (Germany)
31 January 2023 • 4:20 PM - 4:50 PM PST | Moscone Center, Room 153 (Upper Mezzanine South)
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High Al content (Al,G)aN is the most promising material system to produce deep UV light-emitting diodes and lasers and has prospects to realize high power electronics. Growth of these layers on native AlN substrates with low dislocation densities holds the promise to realize devices with high external quantum efficiency. Recent results, however, show despite high structural perfection large hexagonal hillocks, with a lateral extent of several µm form, depending on the film thickness. In this paper we combine AFM, defect selective etching, CL, TEM and nano-beam scanning X-ray diffraction to experimentally disentangle the mutual influence of surface steps, dislocations, strain, and composition on the forming surface morphology. To rationalize our experimental findings, we develop a theoretical model that accounts for the adatom kinetics of Al and Ga on the growth surface in the presence of a-type dislocations.
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CANCELED: Mitigating positive sheet polarization in high efficiency InGaN blue light-emitting diodes
Author(s): Ravi Teja Velpula, Barsha Jain, Hieu Pham Trung Nguyen, Manobalasankar Muthu, New Jersey Institute of Technology (United States)
31 January 2023 • 4:50 PM - 5:10 PM PST | Moscone Center, Room 153 (Upper Mezzanine South)
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We report on the achievement of high-performance polarization-controlled InGaN blue light-emitting diodes (LEDs) by replacing the traditional GaN last quantum barrier (QB) with an AlGaN last QB which is lattice-matched to the electron blocking layer (EBL). The proposed LED could avoid the formation of strong positive sheet polarization charges at the last QB/EBL interface which offers a better hole injection into the active region along with significantly suppressed electron leakage. As a result, this LED could achieve a high internal quantum efficiency (IQE) of 97.87% at 150mA current injection which is ~2.49 times higher than the conventional LED.
Session 8: Emerging Electroluminescent Semiconductor Materials and Devices
1 February 2023 • 8:00 AM - 9:50 AM PST | Moscone Center, Room 153 (Upper Mezzanine South)
Session Chair: Matteo Meneghini, Univ. degli Studi di Padova (Italy)
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Author(s): Michael Heuken, AIXTRON SE (Germany), RWTH Aachen Univ. (Germany); Jona Riedel, Andrei Vescan, Holger Kalisch, RWTH Aachen Univ. (Germany)
1 February 2023 • 8:00 AM - 8:30 AM PST | Moscone Center, Room 153 (Upper Mezzanine South)
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Organic and inorganic halide perovskites have demonstrated rapid progress of optoelectronic figures-of-merit, strongly supporting their application in electroluminescent devices, photovoltaics as well as X-ray and optical detectors. However, the lack of a mature fabrication technology is a major challenge for their commercialization. Chemical vapor deposition (CVD) is an appealing choice due to its flexibility/scalability, high purity and superior process control. In this work, we present a prototype perovskite hot-wall CVD reactor, including details of powder-based sublimation sources, reactor design as well as selected results from deposited perovskite compounds, first optoelectronic devices and remaining challenges.
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Author(s): Czeslaw Skierbiszewski, Institute of High Pressure Physics (Poland)
1 February 2023 • 8:30 AM - 9:00 AM PST | Moscone Center, Room 153 (Upper Mezzanine South)
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Incorporation of tunnel junctions (TJs) to device structure enabled vertical integration of multicolor light emitting diodes (LEDs) and laser diodes (LDs). The TJs allows to control the current path in distributed-feedback LDs and micro-LEDs. It opens possibility to design new architecture devices like “inverted” LEDs or LDs with TJs located below active region. These devices have the sequence of p and n type layers similar to structures grown on hypothetical p-type (0001) GaN substrate, which is beneficial for high carrier injection efficiency, and enables operation at cryogenic temperatures. Finally, we also discuss the properties of bi-directional LEDs and wavelength-tunable LEDs.
12441-29
Author(s): Johannes Glowatzki, Robin Guenkel, Oliver Massmeyer, Philipps-Univ. Marburg (Germany); Marius Mueller, Sangam Chatterjee, Justus-Liebig-Univ. Giessen (Germany); Kerstin Volz, Philipps-Univ. Marburg (Germany)
1 February 2023 • 9:00 AM - 9:30 AM PST | Moscone Center, Room 153 (Upper Mezzanine South)
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Two-dimensional (2D) materials are gaining great attention due to their extraordinary thickness-dependent properties. 2D Ga-VI semiconductors have bandgaps in the UV region making them candidates for several LED concepts. The Indium-containing counterparts of Ga-chalcogenides moreover have small electron effective masses and high mobilities. Hence, 2D III-chalcogenides are promising materials for next-generation optoelectronic applications. We establish metal organic chemical vapor deposition (MOCVD) to find suitable growth routines for 2D materials. We will summarize our current understanding of the MOCVD growth of III-chalcogenides by systematic variation of the growth parameters and correlate the findings to optoelectronic properties of the layers.
12441-30
Author(s): Zher Ying Ooi, Univ. of Cambridge (United Kingdom); Alberto Jiménez-Solano, Univ. de Córdoba (Spain); Yuqi Sun, Jordi Ferrer Orri, Hayden Salway, Krzysztof Galkowski, Univ. of Cambridge (United Kingdom); Piotr Nyga, Wojskowa Akademia Techniczna im. Jaroslawa Dabrowskiego (Poland); Caterina Ducati, Miguel Anaya, Sam Stranks, Univ. of Cambridge (United Kingdom)
1 February 2023 • 9:30 AM - 9:50 AM PST | Moscone Center, Room 153 (Upper Mezzanine South)
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The widespread adoption of solution-processed halide perovskites LEDs demands to surpass the luminous efficacies of conventional LEDs while having full control over the emission properties. In this talk, we report directional and enhanced emission in a green perovskite LED through hybrid photonic-plasmonic modes. We employ advanced optical modelling powered by genetic algorithms to find the best combination of materials and structures compatible with the fabrication of efficient LEDs. The experimental realisation of the optimum designs allows us to show low-temperature processed devices with enhanced emission and fine control over the emission angle. This methodology is versatile and easily integrable in cost-effective LEDs across the whole visible spectrum, opening avenues for their application in displays and light sources where the angular dispersion of light is crucial.
Break
Coffee Break 9:50 AM - 10:20 AM
Session 9: Boron Nitrides
1 February 2023 • 10:20 AM - 12:20 PM PST | Moscone Center, Room 153 (Upper Mezzanine South)
Session Chair: Yong-Hoon Cho, KAIST (Korea, Republic of)
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Author(s): Young Duck Kim, Kyung Hee Univ. (Korea, Republic of)
1 February 2023 • 10:20 AM - 10:50 AM PST | Moscone Center, Room 153 (Upper Mezzanine South)
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Hexagonal boron nitride (hBN) is a two-dimensional van der Waals material and is composed of boron and nitrogen atoms in a hexagonal lattice. hBN is the wide-bandgap semiconductor with a band of 6.4 eV and shows the efficient band edge cathodoluminescence at 215 nm as well as lasing behavior. Here I will present the efficient DUV electroluminescence (EL) in band edge emission at 215 nm as well as broad 303-333 nm emission peaks from hBN van der Waals heterostructure. We observed that 303-333 nm broad emissions with phonon replica of optical phonon energy of hBN based on the Franck-Condon principle, which are attributed to the electric field induced color centers and its highly localized excitons features. I will also present the tunable DUV light emission around band edge emission of 215 nm as a function of electric field direction and discuss the possible origin of DUV EL from hBN van der Waals heterostructures.
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Author(s): Guillaume Cassabois, CNRS (France), Univ. de Montpellier (France)
1 February 2023 • 10:50 AM - 11:20 AM PST | Moscone Center, Room 153 (Upper Mezzanine South)
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Author(s): Seokho Moon, Pohang Univ. of Science and Technology (Korea, Republic of); Adrien Rousseau, Univ. de Montpellier (France); Francis Ngome Okello Odongo, Pohang Univ. of Science and Technology (Korea, Republic of); Youngjae Kim, Daegu Gyeongbuk Institute of Science & Technology (Korea, Republic of); Yunjae Park, Ulsan National Institute of Science and Technology (Korea, Republic of), Institute for Basic Science (Korea, Republic of); Jiye Kim, Pohang Univ. of Science and Technology (Korea, Republic of); Pierre Valvin, Univ. de Montpellier (France); Jaehee Cho, Jeonbuk National Univ. (Korea, Republic of); Feng Ding, Ulsan National Institute of Science and Technology (Korea, Republic of), Institute for Basic Science (Korea, Republic of); Jaedong Lee, Daegu Gyeongbuk Institute of Science & Technology (Korea, Republic of); Si-Young Choi, Pohang Univ. of Science and Technology (Korea, Republic of); Bernard Gil, Guillaume Cassabois, Univ. de Montpellier (France); Jong Kyu Kim, Pohang Univ. of Science and Technology (Korea, Republic of)
1 February 2023 • 11:20 AM - 11:50 AM PST | Moscone Center, Room 153 (Upper Mezzanine South)
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Hexagonal boron nitride (h-BN), an insulating two-dimensional layered material, has recently attracted a great attention due to its fascinating optical, electrical, and thermal properties, and promising applications across the fields of photonics, quantum optics, and electronics. Here, we exploit the scalable approach to grow h-BN on epitaxial gallium nitride (GaN) substrate by using metal-organic chemical vapor deposition (MOCVD). It was found that at a specific MOCVD growth condition, a very unique h-BN film can be grown on GaN substrates, in which few-layer h-BN film is suspended on GaN nanoneedles. The combination of state-of-the-art microscopic and spectroscopic analyses revealed that the suspended h-BN films exhibit unprecedented DUV photoluminescence spectra. In addition, the h-BN films show unprecedented atomic stacking configuration, the mechanism of which will be discussed with optical and structural characterizations and theoretical calculations.
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Author(s): Simon White, Tieshan Yang, Connor Stewart, Zai-Quan Xu, Univ. of Technology, Sydney (Australia); Alexander S. Solntsev, Univ. of Technology (Australia); Mehran Kianinia, Univ. of Technology, Sydney (Australia); Alastair Stacey, The Univ. of Melbourne (Australia); Milos Toth, Igor Aharonovich, Univ. of Technology, Sydney (Australia)
1 February 2023 • 11:50 AM - 12:20 PM PST | Moscone Center, Room 153 (Upper Mezzanine South)
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Controlling and manipulating individual quantum systems underpins the development of scalable quantum technologies. Hexagonal boron nitride is emerging as an exceptional platform for applications in quantum photonics. The two-dimensional van der Waals (vdW) crystal hosts single photon emitting defects (quantum emitters) opening new functionality currently inaccessibly with other 3D quantum sources.
Break
Lunch/Exhibition Break 12:20 PM - 1:50 PM
Session 10: Nanomaterials and Nanostructures for LEDs
1 February 2023 • 1:50 PM - 3:40 PM PST | Moscone Center, Room 153 (Upper Mezzanine South)
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Author(s): Yong-Hoon Cho, KAIST (Korea, Republic of)
1 February 2023 • 1:50 PM - 2:20 PM PST | Moscone Center, Room 153 (Upper Mezzanine South)
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(invited) We present visible-light emitting single photon generation and exciton-polariton condensates at room temperature based on nitiride semiconductor photonic structures. First, we developed several methods including nanoscale luminescence quenching, polarization-controlled quasi-resonant excitation, and self-limited growth technique to achieve high purity single photon generation from InGaN single QDs by suppressing unwanted background emissions. Second, we demonstrated the polariton-based non-Hermitian system by using degenerated modes between two triangular-whispering gallery polariton modes in the hexagonal GaN microrod. By using a loss-modulated substrate, we realized the phase transition from unbroken to broken phase and found that the polariton condensate threshold lowered with increasing loss.
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Author(s): Yasuhiko Arakawa, The Univ. of Tokyo (Japan)
1 February 2023 • 2:20 PM - 2:50 PM PST | Moscone Center, Room 153 (Upper Mezzanine South)
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We show advances in quantum dot light emitting devices, emphasizing single quantum dot light emitting devices. After an overview of the current states of the art of conventional quantum dot lasers, we discuss nano-lasers embedding single or few quantum dots into photonic crystal nanocavities or nanowires as the ultimate semiconductor lasers. Then, recent advances in single-photon light emitting devices for future room-temperature quantum integrated photonics are discussed, including the operation of single-photon sources above room temperature with GaN quantum dots and the integration of single-photon emitters using InAs quantum dots into silicon integrated circuits.
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Author(s): Atul D. Sontakke, Federico Montanarella, Vasilii Khanin, Mohamed Tachikirt, Valerio Favale, Anne Berends, Michael Krames, Marie Anne van de Haar, Seaborough Research B.V. (Netherlands)
1 February 2023 • 2:50 PM - 3:20 PM PST | Moscone Center, Room 153 (Upper Mezzanine South)
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The recent miniaturization of semiconductor light emitting devices (LEDs), such as mini- and micro-LEDs demands stable and efficient down-converting materials with nano-to-submicron dimensions. YAG:Ce, because of its many beneficial properties, is an interesting candidate for these applications when available at the nanoscale. This talk gives an overview of our technologies on achieving stable, well-defined nano-YAG:Ce phosphors with high energy conversion efficiencies. We discuss different synthesis approaches, after treatments and encapsulation technologies, and how these influence the structural and optical properties, and offers nano-YAG:Ce from sub-micron particles down to sizes in the order of 10-20 nm.
12441-38
Author(s): Tobias Schreitmüller, Daniel Ruhstorfer, Akhil Ajay, Andreas Thurn, Paul Schmiedeke, Jonathan J. Finley, Gregor Koblmüller, Walter Schottky Institut (Germany)
1 February 2023 • 3:20 PM - 3:40 PM PST | Moscone Center, Room 153 (Upper Mezzanine South)
Break
Coffee Break 3:40 PM - 4:10 PM
Session 11: Measurements and Characterizations for LED Materials and Devices
1 February 2023 • 4:10 PM - 6:00 PM PST | Moscone Center, Room 153 (Upper Mezzanine South)
Session Chair: Guillaume Cassabois, Univ. de Montpellier (France)
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Author(s): Frank Bertram, Gordon Schmidt, Juergen Christen, Otto-von-Guericke-Univ. Magdeburg (Germany)
1 February 2023 • 4:10 PM - 4:40 PM PST | Moscone Center, Room 153 (Upper Mezzanine South)
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Using nano-cathodoluminescence performed in scanning transmission electron microscope (STEM-CL), we have investigated a cascaded InGaN/GaN LED using tunnel junctions (TJ). Two 5-fold InGaN/GaN multiple quantum wells (MQWs) are separated by a heavily doped GaN:Mg/GaN:Ge TJ. In cross-sectional STEM images the full LED structure is clearly resolved. The panchromatic CL intensity exhibits the highest intensity emitted from the InGaN/GaN MQWs at room temperature. Both MQW luminescence contributions are spectrally separated by 4 nm. In more detail, each MQW shows a peak wavelength change in growth direction indicating different structural and/or chemical properties of the individual 5-fold quantum wells.
12441-40
Author(s): Toon Coenen, Delmic B.V. (Netherlands)
1 February 2023 • 4:40 PM - 5:10 PM PST | Moscone Center, Room 153 (Upper Mezzanine South)
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Structured LED materials such as micro/nanowires are highly promising as they enable superior light outcoupling, tunable directionality and have a small footprint for demanding display applications. In such nanostructured devices, individual electrical contacting and analysis is a tedious and complicated process. Spatially-resolved cathodoluminescence (CL) spectroscopy, in which the electron-beam-induced radiation is collected inside an electron microscope, holds great potential for contactless nanoscale optoelectronic material inspection of semiconductor materials. Conventionally, CL experiments focused on measuring the intensity and spectral content of the light but recently there have been several relevant advancements in the CL technique. Here, we will describe novel time, angle, and polarization-resolved CL techniques that can be used for the analysis of LED devices.
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Author(s): Matteo Meneghini, Nicola Roccato, Francesco Piva, Carlo De Santi, Matteo Buffolo, Univ. degli Studi di Padova (Italy); Camille Haller, Jean-Francois Carlin, Nicolas Grandjean, Ecole Polytechnique Fédérale de Lausanne (Switzerland); Alberto Tibaldi, Francesco Bertazzi, Michele Goano, Politecnico di Torino (Italy); Giovanni Verzellesi, Univ. degli Studi di Modena e Reggio Emilia (Italy); Tim Wernicke, Michael Kneissl, TU Berlin (Germany); Gaudenzio Meneghesso, Enrico Zanoni, Univ. degli Studi di Padova (Italy)
1 February 2023 • 5:10 PM - 5:40 PM PST | Moscone Center, Room 153 (Upper Mezzanine South)
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Defects can significantly impact on the properties and efficiency of III-N LEDs, by influencing the optical performance and the lifetime of the devices. For this reason, defect analysis is a crucial step for device and technology optimization. This presentation summarizes recent results obtained in our laboratories in this field, with the aim of providing a comprehensive picture on the role/impact of defects on device performance and reliability.
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Author(s): Claudia Casu, Matteo Buffolo, Alessandro Caria, Carlo De Santi, Enrico Zanoni, Gaudenzio Meneghesso, Matteo Meneghini, Univ. degli Studi di Padova (Italy)
1 February 2023 • 5:40 PM - 6:00 PM PST | Moscone Center, Room 153 (Upper Mezzanine South)
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This paper investigates the factors that influence the efficiency and reliability of InGaN based visible light emitting diodes with non-optimized carrier injection. Simulation results highlight an asymmetric carrier injection, in particular a lack of electrons in the low bias regime. The low injection efficiency is also confirmed by temperature-dependent measurements, where we observed an increment of the OP with increasing temperature. The behavior of the devices during constant-current stress is investigated by electroluminescence and photoluminescence measurements, to gain insight on the degradation processes.
Posters-Wednesday
1 February 2023 • 6:00 PM - 8:00 PM PST | Moscone Center, Level 2 West
Conference attendees are invited to attend the OPTO poster session on Wednesday evening. Come view the posters, enjoy light refreshments, ask questions, and network with colleagues in your field. Authors of poster papers will be present to answer questions concerning their papers. Attendees are required to wear their conference registration badges to the poster sessions.

Poster Setup: Wednesday 10:00 AM - 5:00 PM
Poster authors, view poster presentation guidelines and set-up instructions at http://spie.org/PWPosterGuidelines.
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Author(s): Chung An Hsieh, National Yang Ming Chiao Tung Univ. (Taiwan); Guang Hsun Tan, Hao Cheng Lin, Kai-Yuan Hsiao, Ming-Yen Lu, National Tsing Hua Univ. (Taiwan); Li Yin Chen, National Yang Ming Chiao Tung Univ. (Taiwan); Hao Wu Lin, National Tsing Hua Univ. (Taiwan)
On demand | Presenting live 1 February 2023
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Through the small organic molecule interfacial layer passivation demonstrated in this work, we presented a new strategy of fabricating high performance vacuum-deposited PeLEDs. The interfacial layer evidently inhibited the Pb0 forming at the vacuum deposited TAPC/perovskite interface and greatly enhanced the device performance. The device with the interfacial layer exhibited a luminance of 55968 cd/m, a current efficiency of 33.2 cd/A, and an EQE of 9.40%, which was a 4-fold enhancement compared to that of the device without the interfacial layer. Very high EQE and brightness are among the highest reported values in vacuum-deposited PeLEDs.
12441-44
Author(s): Maryam Sadeghi, Volker Buschmann, Eugeny Ermilov, Christian Oelsner, PicoQuant GmbH (Germany)
On demand | Presenting live 1 February 2023
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Pulsed diode lasers have found widespread applications in many fields of time-resolved fluorescence spectroscopy and microscopy. Often, use of different excitation wavelengths in the same system requires the use of different diode heads, whose beam paths need to be combined for measurements. Here we present a new stand-alone picosecond laser (Prima) with three integrated colors, which can easily be switched in software. We integrate the laser into a time-resolved fluorescence spectrometer (FluoTime 300) and a confocal microscope (MicroTime 100). There, its performance is compared to that of a standard laser diode, especially for the measurements of long luminescence lifetimes in the µs range.
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Author(s): Rafael Fernandes, Instituto Superior de Engenharia de Lisboa (Portugal), Instituto Politécnico de Lisboa (Portugal); Manuel A. Vieira, UNINOVA (Portugal), Instituto Superior de Engenharia de Lisboa (Portugal); Manuela Vieira, Instituto Superior de Engenharia de Lisboa (Portugal), UNINOVA (Portugal); Pedro Vieira, Instituto Superior de Engenharia de Lisboa (Portugal), Instituto Superior Técnico (Portugal); Paula A. Louro, UNINOVA (Portugal); Mário Véstias, Instituto Superior de Engenharia de Lisboa (Portugal), Instituto Politécnico de Lisboa (Portugal), INESC-ID (Portugal)
On demand | Presenting live 1 February 2023
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An integrated approach that optimizes traffic signals and vehicle trajectory at urban intersections using Visible Light Communication (VLC) is proposed. A connected vehicle (CV) platoon approaches a signalized intersection, and downstream CVs queue before the stop lines. Light is used to communicate information between CVs and the infrastructure using street lamps, intersection signals, and headlights. Interaction with traffic is coordinated by an intersection manager. Integrated control is flexible and adaptive to traffic demands since different traffic movements are incorporated during multiple signal phases. As part of the simulation process, an open-source urban mobility simulator SUMO creates the desired scenarios and generates different urban traffic flows. VLC queue/request/response mechanisms and temporal/space relative pose concepts are used. Using sequence state durations, phase diagrams, and average speed measurements, the system dynamically controls traffic flows at intersections using a deep reinforcement learning (DRL) algorithm, minimizing rush hour bottlenecks, through joint Vehicle-to-Vehicle (V2V) and Vehicle-to-Infrastructure (V2I) communications. Comparisons with trajectory optimization and signal optimization demonstrate the benefits on throughput, delay, and vehicle stops, and reveal the optimal patterns for signals and trajectory.
12441-48
Author(s): Andrea Simaz, Mina Beshara, Gerhard Boehm, Anna Koeninger, Mikhail Belkin, Walter Schottky Institut, Technische Univ. München (Germany)
On demand | Presenting live 1 February 2023
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We fabricated short resonant-cavity light emitting diodes (LEDs) with emission wavelength of 3.4 um using a metal ground plane positioned quarter-wavelength from the active region and the total semiconductor optical cavity thickness of three and five quarter-wavelengths. Devices were fabricated using wafer bonding and substrate removal process. Experimental testing in continuous wave operation at room temperature demonstrates six times enhancement of the optical power output of short resonant-cavity LEDs compared to a reference traditional “bulk” LEDs with an identical active region and optical radiation extraction through a thinned-down doped substrate.
12441-49
Author(s): Prasenjit Prasad Sukul, Missouri Univ. of Science and Technology (United States)
1 February 2023 • 6:00 PM - 8:00 PM PST | Moscone Center, Level 2 West
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Direct white light upconversion emissions of almost ideal chromaticity(0.33, 0.34) were observed using a combinational mixing of blue & orange emitting inorganic phosphor together.
12441-51
Author(s): Quamrul Huda, Chelsea Ragbir, Matthew Hart, Andrew Anderson-Serson, Ben Ripka, Alberto Leon Cevallos, NAIT (Canada); Anas Ahmed, Dan Priestley, Imperial Oil Ltd. (Canada)
On demand | Presenting live 1 February 2023
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light-emitting diode (LED) based sensor system is developed for ex-situ placements at fluid-tanks to monitor the level of fluids through level gauge displays. The sensor system is designed for remote monitoring of operational status of industrial heavy equipment through a low-footprint internet of things (IoT) approach without involving extensive mechanical or electrical overhauling for sensor deployment. Sequential and non-sequential ray tracing simulation over visible and near infrared spectrum were conducted for optical beam propagation through air-fluid, air-glass, and glass-fluid interfaces. Fluid specific refractive index and propagation parameters were used in ray tracing simulation to design the optical path and wavelength of operation that are specific to fluids and the fluid tank configurations. Our low-footprint non-invasive approach of fluid level monitoring allows their deployment on industry installations with minimum interruption of services.
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Author(s): Elena Kabardiadi-Virkovski, Westsächsische Hochschule Zwickau (Germany); Alexander Kabardiadi-Virkovski, Peter Hartmann, Fraunhofer-Institut für Werkstoff- und Strahltechnik IWS (Germany), Westsächsische Hochschule Zwickau (Germany)
On demand | Presenting live 1 February 2023
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Light-emitting diodes (LEDs) are commonly used in various applications in the field of optical metrology and remote sensing, typically as light or signal sources. Apart from the field of optical metrology, low coherent short-pulsed light sources with high repetition stability and tunable amplitude are widely used for calibration and referencing of optical systems. This work focuses on the generation of short optical pulses (down to 10 ns FWHM) with conventional high-power LEDs for metrology purposes. A pulse generation technique, which allows tuning the pulse width and amplitude through the temporal management of three independent edges of TTL-like signals, is presented.
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Author(s): Amade Ndiaye, Ahlem Ghazouani, Romain Sommer, Elisa Vermande, Christine Di Nardo, Hai Son Nguyen, CEA-LETI (France); Christian Seassal, Emmanuel Drouard, Institut des Nanotechnologies de Lyon (France); Badhise Ben Bakir, CEA-LETI (France)
On demand | Presenting live 1 February 2023
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While state-of-the-art RGB microdisplays rely on quantum-dot color-converters (CC), the next generation of very bright and high-resolution AR microdisplays could be based on MQW CC due to their better photostability and higher blue-light absorption. However, their practical implementation is still hindered by their low light extraction efficiency (LEE), their Lambertian-like emission patterns, as well as the challenges related to their integration on on-Silicon blue µLED arrays (transfer and pixelization). In this work, we use photonic-crystals (PhCs) as light extractors and investigate all the challenges related to the design, integration & fabrication as well as testing of novel MQW based CC.
12441-55
Author(s): Paolo De Martino, Bernard Aventurier, Patrick Le Maitre, Christelle Laugier, Basien Miralles, Clement Ballot, Benoit Racine, Julia Simon, CEA (France)
On demand | Presenting live 1 February 2023
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Efficient Light Emitting Diodes (LED) with a wide color gamut for high-resolution RGB display applications is still a challenging objective for state of the art technologies. The current industrial technology compromises the narrow RGB peaks emission with device efficiency. In this work, we demonstrate a CMOS compatible monolithic hybrid approach the fabrication of GaN Blue micro-LED co-integrated with Green or Red top emitting OLED on 8’’ GaN epitaxy on Si, with LED sizes as low as 5µm. This approach fulfills the need of a good color purity, while taking advantage of the best of both technology efficiencies and emission width.
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Author(s): Florian Meierhofer, Maximilian Vergin, Georg Schöttler, Steffen Bornemann, Andreas Waag, Technische Univ. Braunschweig (Germany)
1 February 2023 • 6:00 PM - 8:00 PM PST | Moscone Center, Level 2 West
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Author(s): Vincent Rienzi, Jordan Smith, Norleakvisoth Lim, Hsun-Ming Chang, Philip Chan, Matthew S. Wong, Steven P. DenBaars, Shuji Nakamura, Univ. of California, Santa Barbara (United States)
1 February 2023 • 6:00 PM - 8:00 PM PST | Moscone Center, Level 2 West
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Author(s): Heesang Ahn, Hyerin Song, Taerim Yoon, Mihee Park, Kyujung Kim, Pusan National Univ. (Korea, Republic of)
1 February 2023 • 6:00 PM - 8:00 PM PST | Moscone Center, Level 2 West
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Author(s): Nicola Trivellin, Lisa Borella, Elena Barbera, Eleonora Sforza, Univ. degli Studi di Padova (Italy)
1 February 2023 • 6:00 PM - 8:00 PM PST | Moscone Center, Level 2 West
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Micro-Algae production has seen growth of interest as a renewable source of food, nutraceutical, and biofuels. In this work we studied the integration of light emitting diodes (LED) in photobioreactors (PBRs) to increase the algal production efficiency. A multiwavelength LED light source with selectable intensity able to operate under continuous wave irradiation (CW) or with high intensity, short pulses, has been developed. The efficiency of biomass production has been examined both for CW and pulsed operations. The efficiency obtained with the Photovoltaic (PV) + LED light source is then compared to that of the solar radiation to analyze the performances of an indoor and outdoor system.
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Author(s): Lev Azarkh, Xiaochen Liu, Technische Univ. Eindhoven (Netherlands); Jean-Paul M. G. Linnartz, Signify N.V. (Netherlands)
On demand | Presenting live 1 February 2023
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Optical Wireless Communication systems are limited in bandwidth by their electro-optical components. We study the receiving photo diode, its surface area and the associated capacitance. A large–area detector improves the signal–to–noise ratio, but a small size allows a high bandwidth. An optimum detector size exists. It depends on photo diode properties, the Trans-impedance Amplifier noise performance and the received signal strength. Results are relevant to the design of indoor LiFi systems with wide coverage as well as for tracking acquisition in long–range Free Space Optical applications.
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Author(s): Tsung-Xian Lee, Meng-Hsuan Lin, Yi-Ming Li, National Taiwan Univ. of Science and Technology (Taiwan); Wei-Chang Lin, Taiwan Applied Crystal Co., Ltd. (Taiwan)
1 February 2023 • 6:00 PM - 8:00 PM PST | Moscone Center, Level 2 West
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Author(s): Sheikh Ifatur Rahman, Agnes Maneesha Dominic Merwin Xavier, The Ohio State Univ. (United States); Robert Armitage, Lumileds, LLC (United States); Siddharth Rajan, The Ohio State Univ. (United States)
On demand | Presenting live 1 February 2023
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Long wavelength emitters in the green (> 500 nm) wavelength suffers from large average polarization fields for high Indium-content quantum wells for conventional P-up structure as such field opposes the depletion field leading to large electrostatic barriers for both electrons and holes injection. LEDs fabricated along the N-polar direction with a p-up orientation or Ga-polar direction with p-down orientation lower such electrostatic barriers to carrier injection due to alignment of the polarization dipole field and depletion region field which can theoretically reduce the electrical injection efficiency and reduce the forward voltage of operation. In this report, we demonstrate for the first time Ga-polar p-down green emitting LEDs using bottom tunnel junctions, and having external quantum efficiencies comparable to those of equivalent p-up LEDs grown by metal organic chemical vapor deposition
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Author(s): Max Caspar Sundermeier, Zhuoqun Dai, Tobias Glück, Philipp Findling, Lukas Hanisch, Roland Lachmayer, Leibniz Univ. Hannover (Germany)
On demand | Presenting live 1 February 2023
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Automotive headlamps equipped with high-resolution modulator technology can provide comfort and safety features like a glare-free high beam and road projections. Previous research has shown the importance of beam shaping for automotive headlamps with a peak of the illuminance in the center of the FoV for longer viewing range. Luminous efficacy and contrast are advantages of µLED-Array, which can be exploited for improved automotive headlamps. We present the optical design of a distorting µLED-Array-based headlamp. In particular, we address the challenges of optical design for lambertian emitters and compare the µLED-Array-based system with a DMD-based system.
12441-66
Author(s): Huijin Kim, Boseong Son, Young-Woong Lee, Yeungnam Univ. (Korea, Republic of); Si-Hyun Park, Yeungnam university (Korea, Republic of)
1 February 2023 • 6:00 PM - 8:00 PM PST | Moscone Center, Level 2 West
Conference Chair
Pohang Univ. of Science and Technology (Korea, Republic of)
Conference Chair
Arkesso, LLC (United States)
Conference Chair
ams-OSRAM International GmbH (Germany)
Program Committee
Meta (United States)
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KAIST (Korea, Republic of)
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Google (United States)
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CEA-LETI (France)
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LayTec AG (Germany)
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Technische Univ. Braunschweig (Germany)
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AIXTRON SE (Germany)
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Signify N.V. (Netherlands)
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Lumileds, LLC (United States)
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OSRAM Opto Semiconductors Inc. (United States)
Program Committee
Veeco Instruments Inc. (United States)
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PlayNitride Inc. (Taiwan)
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National Yang Ming Chiao Tung Univ. (Taiwan)
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Nagoya Univ. (Japan)
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Univ. degli Studi di Padova (Italy)
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OSRAM GmbH (United States)
Program Committee
Meijo Univ. (Japan)
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Sophia Univ. (Japan)
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Seaborough Research B.V. (Netherlands)
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National Chung Hsing Univ. (Taiwan)
Program Committee
Apple Inc. (United States)
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  • Author(s) information
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Note: Only original material should be submitted. Commercial papers, papers with no new research/development content, and papers with proprietary restrictions will not be accepted for presentation.