Monterey Conference Center and Monterey Marriott
Monterey, California, United States
15 - 19 September 2019
Conference 11147
International Conference on Extreme Ultraviolet Lithography 2019
Sunday - Thursday 15 - 19 September 2019
Conference
Committee
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Monday 16 September Show All Abstracts
Opening Remarks: Joint with conferences 11147 and 11148
Monday 16 September 2019
8:00 AM - 8:30 AM
Location: Monterey Conf. Ctr., Steinbeck 2
Session 1:
Plenary Session: Joint session with conferences 11147 and 11148
Monday 16 September 2019
8:30 AM - 9:50 AM
Location: Monterey Conf. Ctr., Steinbeck 2
Plenary TBD (Plenary Presentation)
Paper 11147-300
Author(s):
Show Abstract
Chip to city: the future of mobility (Plenary Presentation)
Paper 11148-300
Author(s):
Show Abstract
EUVL Opening Remarks
Monday 16 September 2019
10:20 AM - 10:30 AM
Location: Monterey Conf. Ctr., Steinbeck 3
Session 2:
EUV Scanner, Source, and Industrialization
Monday 16 September 2019
10:30 AM - 12:20 PM
Location: Monterey Conf. Ctr., Steinbeck 3
Session Chairs:
Winfried M. Kaiser, Carl Zeiss SMT GmbH (Germany) ;
Sang Hun Lee, Intel Corp. (United States)
Progress on 0.33 NA EUV systems for High-Volume Manufacturing (Invited Paper)
Paper 11147-1
Author(s): Marcel Mastenbroek, ASML Netherlands B.V. (Netherlands)
Show Abstract
Advancing EUV lithography optics
Paper 11147-2
Author(s): Olaf Conradi, Paul Graeupner, Carl Zeiss SMT GmbH (Germany); Jan van Schoot, ASML Netherlands B.V. (Netherlands); Peter Kuerz, Winfried Kaiser, Carl Zeiss SMT GmbH (Germany)
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Challenge of high power LPP-EUV source with long collector mirror lifetime for semiconductor HVM
Paper 11147-3
Author(s): Hakaru Mizoguchi, Gigaphoton Inc. (Japan)
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EBL2 an EUV lithography beam line irradiation facility
Paper 11147-4
Author(s): Herman H. P. Th. Bekman, Freek T. Molkenboer, Michel van Putten, Kyri Nicolai, Rory de Zanger, Robert Ebeling, Norbert Koster, Arnold Storm, Chien-Ching Wu, Jetske Stortelder, Jochem Janssen, Michael Dekker, TNO Science and Industry (Netherlands)
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High repetition rate (81.25MHz) ERL-based FEL project at cERL
Paper 11147-5
Author(s): Hiroshi Kawata, Ryukou Kato, Hiroshi Sakai, Kimichika Tsuchiya, Yasunori Tanimoto, Yosuke Honda, Tsukasa Miyajima, Miho Shimada, Norio Nakamura, High Energy Accelerator Research Organization, KEK (Japan)
Show Abstract
Lunch Break 12:20 PM - 1:50 PM
Session 3:
EUV Stochastic I
Monday 16 September 2019
1:50 PM - 3:40 PM
Location: Monterey Conf. Ctr., Steinbeck 3
Session Chairs:
Gregory M. Wallraff, IBM Research - Almaden (United States) ;
Eric Hendrickx, IMEC (Belgium)
Predicting stochastic defects across the process window (Invited Paper)
Paper 11147-6
Author(s): Andreas Frommhold, Dorin Cerbu, Joost Bekaert, Lieve Van Look, IMEC (Belgium); Mark J. Maslow, Gijsbert Rispens, ASML Netherlands B.V. (Netherlands); Eric Hendrickx, IMEC (Belgium)
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Defect based process window to model pattern failure rate beyond 10e-10
Paper 11147-7
Author(s): Stefan Hunsche, Fuming Wang, Bob Lin, Marc Kea, ASML US, Inc. (United States); Bram Slachter, Koen Thuijs, ASML Netherlands B.V. (Netherlands)
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Metrics for judging stochastic variability in lithography
Paper 11147-8
Author(s): Chris A. Mack, Fractilia LLC (United States)
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Large area EUV via yield analysis for single damascene process: voltage contrast, CD and defect metrology
Paper 11147-9
Author(s): Victor M. Blanco Carballo, IMEC (Belgium)
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Stochastic response to mask absorber defects as EUV enters high volume manufacturing
Paper 11147-10
Author(s): Alessandro Vaglio Pret, KLA Texas (United States); Moshe E. Preil, KLA Corp. (United States); David Blankenship, Stewart A. Robertson, Patrick Lee, John J. Biafore, KLA Texas (United States)
Show Abstract
Selected Poster Speed Talks: Joint Session with conference 11147 and 11148
Monday 16 September 2019
4:00 PM - 5:50 PM
Location: Monterey Marriott, San Carlos Ballroom 4
Poster Session
Monday 16 September 2019
6:00 PM - 7:30 PM
Location: Monterey Marriott, San Carlos Ballroom 4

Symposium attendees are invited to attend the poster session on Monday evening in the Monterey Marriott, San Carlos 4, Mezzanine Level. Authors will be present during the poster reception for the from 6:00 pm to 7:30 pm to answer questions and provide in-depth discussion regarding their work.

Attendees are requested to wear their conference registration badges.
Estimating extremely low probability of stochastic defect in EUV lithography from CD distribution measurement
Paper 11147-44
Author(s): Hiroshi Fukuda, Yoshinori Momonoi, Kei Sakai, Hitachi High-Technologies Corp. (Japan)
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Impact of EUV multilayer mask defects on imaging performance and its correction methods
Paper 11147-51
Author(s): Yunyun Hao, Lisong Dong, Institute of Microelectronics, Chinese Academy of Sciences (China); Xi Chen, Beijing Univ. of Posts and Telecommunications (China); Rui Chen, Taian Fan, Institute of Microelectronics, Chinese Academy of Sciences (China); Yayi Wei, Tianchun Ye, Institute of Microelectronics, Chinese Academy of Sciences (China), Univ. of Chinese Academy of Sciences (China)
Show Abstract
EUV sensitization mechanisms of carboxylic acids used as ligands of metal oxide nanocluster resists
Paper 11147-58
Author(s): Yusa Muroya, Teppei Yamada, Osaka Univ. (Japan); Shinichi Yamashita, The Univ. of Tokyo (Japan); Yoshitaka Komuro, Tokyo Ohka Kogyo Co., Ltd. (Japan); Daisuke Kawana, Akiyoshi Yamazaki, Tokyo Ohka Kogyo America, Inc. (Japan); Takahiro Kozawa, Osaka Univ. (Japan)
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Resolution enhancement for lensless mask metrology with RESCAN
Paper 11147-65
Author(s): Iacopo Mochi, Paul Scherrer Institut (Switzerland)
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EUV metrology tools diversified from common building blocks and experience
Paper 11147-67
Author(s): Rainer Lebert, Andreas Biermanns-Föth, Jennifer Arps, Thomas Missalla, Christoph Phiesel, Christian Piel, RI Research Instruments GmbH (Germany)
Show Abstract
Quantitative phase imaging for EUV photomasks
Paper 11147-70
Author(s): Stuart Sherwin, Andrew Neureuther, Laura Waller, Univ. of California, Berkeley (United States); Patrick Naulleau, The Ctr. for X-Ray Optics, Lawrence Berkeley National Lab. (United States)
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SEM AutoAnalysis for reduced turnaround time and to ensure high repair quality of EUV photomasks
Paper 11147-71
Author(s): Kokila D. Egodage, Fan Tu, Horst Schneider, Christian F. Hermanns, Grizelda Kersteen, Bartholomaeus Szafranek, Kristian Schulz, Carl Zeiss SMT GmbH (Germany)
Show Abstract
Hemicellulose spin on carbon hardmask for EUV lithography
Paper 11147-46
Author(s): Kazuyo Morita, Kimiko Yamamoto, Hiroki Tanaka, Yasuaki Tanaka, Oji Holdings Corp. (Japan); Masahiko Harumoto, Yuji Tanaka, Chisayo Nakayama, You Arisawa, Tomohiro Motono, SCREEN Semiconductor Solutions Co., Ltd. (Japan); Harold Stokes, SCREEN SPE Germany GmbH (Germany); Masaya Asai, SCREEN Semiconductor Solutions Co., Ltd. (Japan)
Show Abstract
Industrial photoresist development with the EUV laboratory exposure tool
Paper 11147-55
Author(s): Sascha Brose, Serhiy Danylyuk, RWTH Aachen Univ. (Germany); Christian Kaiser, Maik Gerngross, Allresist GmbH (Germany); Jochen Stollenwerk, RWTH Aachen Univ. (Germany), Fraunhofer-Institut für Lasertechnik ILT (Germany); Matthias Schirmer, Allresist GmbH (Germany); Peter Loosen, RWTH Aachen Univ. (Germany), Fraunhofer-Institut für Lasertechnik ILT (Germany)
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Precision fabrication of EUVL programmed defects with helium ion beam lithography
Paper 11147-60
Author(s): Chien-Lin Lee, Jia-Syun Cai, Sheng-Wei Chien, Kuen-Yu Tsai, National Taiwan Univ. (Taiwan)
Show Abstract
Study of RLS trade-off mitigation utilizing a novel negative chemically amplified resist for high resolution patterning
Paper 11147-63
Author(s): Satoshi Enomoto, Takumi Yoshino, Kohei Machida, Michiya Naito, Toyo Gosei Co., Ltd. (Japan); Takahiro Kozawa, Osaka Univ. (Japan)
Show Abstract
Alkyltin Keggin clusters as EUV photoresist technology
Paper 11147-72
Author(s): Rebecca Stern, Univ. of California, Berkeley (United States); Danielle C. Hutchison, Morgan R. Olsen, Oregon State Univ. (United States); Lev N. Zakharov, Univ. of Oregon (United States); Kristin A. Persson, Univ. of California, Berkeley (United States); May Nyman, Oregon State Univ. (United States)
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Update of the development progress of the high power LPP-EUV light source using a magnetic field
Paper 11147-45
Author(s): Yuta Takashima, Tsukasa Hori, Yoshifumi Ueno, Takayuki Yabu, Georg Soumagne, Shinji Nagai, Tatsuya Yanagida, Yutaka Shiraishi, Kenichi Miyao, Hideyuki Hayashi, Yukio Watanabe, Tamotsu Abe, Hiroaki Nakarai, Takashi Saito, Hakaru Mizoguchi, Gigaphoton Inc. (Japan)
Show Abstract
New coater/developer technologies for CD control and defectivity reduction towards 5 nm and smaller nodes
Paper 11147-47
Author(s): Arnaud Dauendorffer, Yuya Kamei, Shinichiro Kawakami, Makoto Muramatsu, Kathleen Nafus, Akihiro Sonoda, Tokyo Electron Kyushu Ltd. (Japan); Philippe Foubert, IMEC (Belgium)
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Development of sensitizers for EUV resists and Spin-on-Carbon materials
Paper 11147-48
Author(s): Takashi Sato, Satiko Shinjo, Masatoshi Echigo, Mitsubishi Gas Chemical Co., Inc. (Japan); Hiroto Kudo, Kansai Univ. (Japan)
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Validation of optical constants in the EUV spectral range
Paper 11147-49
Author(s): Qais Saadeh, Victor Soltwisch, Frank Scholze, Physikalisch-Technische Bundesanstalt (Germany)
Show Abstract
Study of defect perturbation in multilayer of EUV mask
Paper 11147-50
Author(s): Guannan Li, Institute of Microelectronics, Chinese Academy of Sciences (China), Univ. of Chinese Academy of Sciences (China); Lituo Liu, Zhou Weihu, Xiaobin Wu, Xiaomei Chen, Yu Wang, Institute of Microelectronics, Chinese Academy of Sciences (China)
Show Abstract
Thermal deformation of EUV mask with next generation absorbers
Paper 11147-52
Author(s): Chung-Hyun Ban, Hanyang Univ. (Korea, Republic of)
Show Abstract
Study on feature extraction and classification of defects from EUV mask with arbitrary pattern using convolutional neural network
Paper 11147-53
Author(s): Lituo Liu, Guannan Li, Weihu Zhou, Xiaobin Wu, Yu Wang, Institute of Microelectronics, Chinese Academy of Sciences (China)
Show Abstract
Coater/developer based techniques to improve high-resolution EUV patterning defectivity
Paper 11147-56
Author(s): Naoki Shibata, Lior Huli, Corey Lemley, TEL Technology Ctr., America, LLC (United States); Yuichiro Miyata, Tokyo Electron Kyushu Ltd. (Japan); Dave Hetzer, Toshiharu Wada, Akiteru Ko, TEL Technology Ctr., America, LLC (United States); Shinichiro Kawakami, Takahiro Shiozawa, Hidetsugu Yano, Kenichi Ueda, Akiko Kai, Hiroshi Ichinomiya, Koichiro Tanaka, Akihiro Sonoda, Tokyo Electron Kyushu Ltd. (Japan); Karen Petrillo, Luciana Meli, Nelson Felix, Cody Murray, Alex Hubbard, IBM Corp. (United States)
Show Abstract
A method for compensating lithographic influence of EUV mask blank defects by an Advanced Genetic Algorithm
Paper 11147-57
Author(s): Ruixuan Wu, Institute of Microelectronics, Chinese Academy of Sciences (China), Univ. of Chinese Academy of Sciences (China); Lisong Dong, Institute of Microelectronics, Chinese Academy of Sciences (China); Yayi Wei, Institute of Microelectronics, Chinese Academy of Sciences (China), Univ. of Chinese Academy of Sciences (China)
Show Abstract
Impact of mask topography and flare on process window of EUV lithography
Paper 11147-59
Author(s): Rongbo Zhao, Institute of Microelectronics, Chinese Academy of Sciences (China), Univ. of Chinese Academy of Sciences (China); Lisong Dong, Institute of Microelectronics, Chinese Academy of Sciences (China); Yayi Wei, Institute of Microelectronics, Chinese Academy of Sciences (China), Univ. of Chinese Academy of Sciences (China)
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The stochastic origin analysis using the resonant soft X-ray scattering method in EUV resists
Paper 11147-61
Author(s): Takeo Watanabe, Tetsuo Harada, Jun Tanaka, Takuma Ishiguro, Univ. of Hyogo (Japan)
Show Abstract
Laboratory-based EUV spectroscopy for the characterization of thin films, surfaces and interfaces
Paper 11147-62
Author(s): Lukas Bahrenberg, Serhiy Danylyuk, Sven Glabisch, Sascha Brose, Moein Ghafoori, Jochen Stollenwerk, RWTH Aachen Univ. (Germany); Peter Loosen, Fraunhofer-Institut für Lasertechnik ILT (Germany)
Show Abstract
Performance of NXE:3400B EUVL sources in the field and prospects of scaling of power beyond 250W
Paper 11147-64
Author(s): Igor V. Fomenkov, Peter Mayer, Michael Purvis, Alexander Schafgans, Yezheng Tao, Slava Rokitski, Lukasz Urbanski, Jayson Stewart, Andrew LaForge, Alex Ershov, Rob Rafac, Joshua Lukens, Chirag Rajyaguru, Georgiy Vaschenko, Qiushi Zhu, Klaus Hummler, Silvia De Dea, Martijn Leenders, Payam Tayebati, David Brandt, Daniel Brown, ASML US, LP (United States)
Show Abstract
Alternative developer solutions and processes for EUV lithography
Paper 11147-66
Author(s): Julius Joseph S. Santillan, Osaka Univ. (Japan); Masahiko Harumoto, Chisayo Nakayama, Yuji Tanaka, Tomohiro Motono, Masaya Asai, SCREEN Semiconductor Solutions Co., Ltd. (Japan); Toshiro Itani, Osaka Univ. (Japan)
Show Abstract
EUV source of high spectral brilliance as enabler for decent throughput standalone EUV defect review microscope
Paper 11147-68
Author(s): Rainer Lebert, Christian Pampfer, Andreas Biermanns-Föth, Gordon Staab, Christian Piel, RI Research Instruments GmbH (Germany); Samir Ellwi, Denis Glushkov, ISTEQ B.V. (Netherlands); Konstantin Koshelev, Institute of Spectroscopy (Russian Federation), RnD-ISAN/EUV Labs. (Russian Federation); Juri Sidelnikov, Institute of Spectroscopy (Russian Federation)
Show Abstract
Development of high-power EUV irradiation tool in hydrogen atmosphere
Paper 11147-69
Author(s): Tetsuo Harada, Ayato Ohgata, Takeo Watanabe, Univ. of Hyogo (Japan)
Show Abstract
Through-pellicle inspection using EUV ptychography microscope
Paper 11147-73
Author(s): Young Woong Kim, Dong Gon Woo, Yong Ju Jang, Seong Ju Wi, Jinho Ahn, Seunghyeok Shin, Whoi-Yul Kim, Hanyang Univ. (Korea, Republic of)
Show Abstract
Defect improvement for an EUV process
Paper 11147-74
Author(s): Harold W. Stokes, SCREEN SPE Germany GmbH (Germany); Masahiko Harumoto, SCREEN Semiconductor Solutions Co., Ltd. (Japan)
Show Abstract
Multilayer absorber phase shift mask using platinum for high numerical aperture extreme ultraviolet lithography
Paper 11147-75
Author(s): Dongmin Jeong, Jung Sik Kim, Yoon Jong Han, Jinho Ahn, Hanyang Univ. (Korea, Republic of)
Show Abstract
Analysis of dissolution of partially aggregated resist particles due to stochastic effect of exposure using DLA model
Paper 11147-54
Author(s): Akira Sasaki, National Institutes for Quantum and Radiological Science and Technology (Japan)
Show Abstract
Fully automated EUV pellicle mounting tool for HVM
Paper 11147-100
Author(s): Seong-Yong Moon, Fine Semitech Co Ltd (Korea, Republic of)
Show Abstract
Tuesday 17 September Show All Abstracts
Announcements
Tuesday 17 September 2019
8:00 AM - 8:10 AM
Location: Monterey Conf. Ctr., Steinbeck 3
Session 4:
EUV Mask and Lithography Integration: Joint Session with conferences 11147 and 11148
Tuesday 17 September 2019
8:10 AM - 10:10 AM
Location: Monterey Conf. Ctr., Steinbeck 2
Session Chairs:
Frank E. Abboud, Intel Corp. (United States) ;
Rik Jonckheere, IMEC (Belgium)
Advanced reticles for improved EUV imaging at low k1 (Invited Paper)
Paper 11147-11
Author(s): Claire van Lare, Frank J. Timmermans, Jo Finders, ASML Netherlands B.V. (Netherlands)
Show Abstract
The role of EPE in process definition (Invited Paper)
Paper 11148-11
Author(s): Robert M. Bigwood, Intel Corp. (United States)
Show Abstract
Improving exposure latitudes and aligning best focus through pitch by mitigating M3D effects with controlled aberrations
Paper 11147-12
Author(s): Joern-Holger Franke, Joost Bekaert, Victor M. Blanco Carballo, Lieve Van Look, IMEC (Belgium); Felix Wahlisch, Kateryna Lyakhova, Paul van Adrichem, Mark J. Maslow, Guido Schiffelers, ASML Netherlands B.V. (Netherlands); Eric Hendrickx, IMEC (Belgium)
Show Abstract
A portrait of the complex signature of EUV masks in the EUV imaging process
Paper 11147-13
Author(s): Renzo Capelli, Carl Zeiss SMT GmbH (Germany); Eelco van Setten, ASML Netherlands B.V. (Netherlands); Grizelda Kersteen, Walter Pauls, Carl Zeiss SMT GmbH (Germany); Natalia Davydova, Stan Peters, Guido Schiffelers, Mark van de Kerkhof, ASML Netherlands B.V. (Netherlands); Scott Chegwidden, Firoz Ghadiali, Intel Corp. (United States); John McNamara, Joost Gielis, ASML Netherlands B.V. (Netherlands)
Show Abstract
Evaluations of the impact of reticle measurement methods and reticle variability on mask proximity and optical proximity correction model accuracy
Paper 11148-12
Author(s): Thomas I. Wallow, Adam Lyons, Chris A. Spence, Chumeng Zheng, ASML San Jose (United States); Yohei Torigoe, Nippon Control System Corp. (Japan); Dai Tsunoda, Nippon Control System Corp. (United States); Brid Connoly, Toppan Photomasks, Inc. (Germany); Franklin D. Kalk, Toppan Photomasks, Inc. (United States); Christian Buergel, Markus Bender, Advanced Mask Technology Ctr. GmbH Co. KG (Germany)
Show Abstract
Session 5:
EUV Resist I
Tuesday 17 September 2019
10:30 AM - 12:20 PM
Location: Monterey Conf. Ctr., Steinbeck 3
Session Chairs:
Huixiong Dai, Applied Materials, Inc. (United States) ;
Toru Fujimori, FUJIFILM Corp. (Japan)
EUVL fundamental works at University of Hyogo (Invited Paper)
Paper 11147-14
Author(s): Takeo Watanabe, Tetsuo Harada, Univ. of Hyogo (Japan)
Show Abstract
Development of EUV chemically amplified resist
Paper 11147-15
Author(s): Yuki Fukumura, Tatsuya Fujii, Kenta Suzuki, Yasuhiro Yoshii, Shogo Matsumaru, Yoshitaka Komuro, Daisuke Kawana, Akiyoshi Yamazaki, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Show Abstract
How to improve ‘chemical stochastic’ in EUV lithography
Paper 11147-16
Author(s): Toru Fujimori, FUJIFILM Corp. (Japan)
Show Abstract
Development of main chain scission type photoresists for EUV lithography
Paper 11147-17
Author(s): Akihide Shirotori, Zeon Corp. (Japan); Yannick Vesters, Ashish Rathore, IMEC (Belgium); Manabu Hoshino, Zeon Corp. (Japan); Danilo De Simone, Geert Vandenberghe, IMEC (Belgium); Hirokazu Matsumoto, Zeon Corp. (Japan)
Show Abstract
Initial results with the high opacity multi-trigger resist
Paper 11147-18
Author(s): Greg O'Callaghan, Carmen Popescu, Irresistible Materials Ltd. (United Kingdom); Yannick Vesters, IMEC (Belgium); Alexandra McClelland, Irresistible Materials Ltd. (United Kingdom); John Roth, Nano-C, Inc. (United States); Wolfgang Theis, Alex P. G. Robinson, The Univ. of Birmingham (United Kingdom)
Show Abstract
Wednesday 18 September Show All Abstracts
Announcements
Wednesday 18 September 2019
8:00 AM - 8:10 AM
Location: Monterey Conf. Ctr., Steinbeck 3
Session 6:
EUV Blank and Films: Joint Session with conference 11147 and 11148
Wednesday 18 September 2019
8:10 AM - 10:00 AM
Location: Monterey Conf. Ctr., Steinbeck 2
Session Chairs:
Onoue Takahiro, HOYA Corp. (Japan) ;
Ted Liang, Intel Corp. (United States)
Development of high-k alternative absorber material system for next generation EUV mask (Invited Paper)
Paper 11147-19
Author(s): Vibhu Jindal, Shuwei Liu, Kan Fu, Weimin Li, Wen Xiao, Sankesha Bhoyar, Abbas Rastegar, Madhavi Chandrachood, Applied Materials, Inc. (United States)
Show Abstract
Resolution enhancement technique options to enable 0.33 NA EUV single exposure via patterning for 3-nm generation of logic technology
Paper 11147-20
Author(s): Weimin Gao, ASML Intl. Trading Co., Ltd. (China)
Show Abstract
Interfacial quality of high-reflectivity Mo-Si multilayers for EUV mask blanks
Paper 11147-21
Author(s): Narasimhan Srinivasan, Katrina Rook, Veeco Instruments Inc. (United States); Kenji Yamamoto, Veeco Instruments Inc. (Japan); Vincent Ip, Tania Henry, Meng H. Lee, Veeco Instruments Inc. (United States)
Show Abstract
Examination of flatness key performance indicators for reticles in Next-Generation, High-NA EUV scanners
Paper 11148-29
Author(s): Katherine Ballman, Chris Lee, David L. Aronstein, Corning Inc. (United States)
Show Abstract
EUV mask polarization effects
Paper 11147-22
Author(s): Lilian Neim, Bruce Smith, Rochester Institute of Technology (United States)
Show Abstract
Session 7:
EUV Defects, Inspection and Characterization: Joint Session with conferences 11147 and 11148
Wednesday 18 September 2019
10:30 AM - 12:20 PM
Location: Monterey Conf. Ctr., Steinbeck 2
Session Chairs:
Thomas Scherübl, Carl Zeiss SMS Ltd. (Israel) ;
Vibhu Jindal, Applied Materials, Inc. (United States)
Stochastic printing behavior of ML-defects on EUV mask (Invited Paper)
Paper 11147-23
Author(s): Rik Jonckheere, IMEC (Belgium); Lawrence S. Melvin, Synopsys, Inc. (United States)
Show Abstract
Actinic patterned mask defect inspection for EUV lithography
Paper 11148-30
Author(s): Hiroki Miyai, Tsunehito Kohyama, Tomohiro Suzuki, Kiwamu Takehisa, Hirokazu Seki, Koichi Moriizumi, Haruhiko Kusunose, Lasertec Corp. (Japan)
Show Abstract
Capability of DUV inspection for the LWR improved EUV mask of sub-15 nm hp on wafer
Paper 11148-31
Author(s): Masato Naka, Keisuke Chiba, Ai Kumada, Keiko Morishita, Kosuke Takai, Takashi Kamo, Eishi Shiobara, Shingo Kanamitsu, Toshiba Memory Corp. (Japan)
Show Abstract
Expanding the capabilities of the SHARP EUV mask microscope
Paper 11147-24
Author(s): Markus P. Benk, Ryan Miyakawa, Weilun Chao, Patrick Naulleau, Lawrence Berkeley National Lab. (United States)
Show Abstract
EUV reticle inspection using phase retrieval algorithms: a performance comparison
Paper 11147-25
Author(s): Ricarda Nebling, Iacopo Mochi, Dimitrios Kazazis, Uldis Locans, Atoosa Dejkameh, Yasin Ekinci, Paul Scherrer Institut (Switzerland)
Show Abstract
Lunch Break 12:20 PM - 1:40 PM
Session 8:
EUV Pellicle: Joint Session with conferences 11147 and 11148
Wednesday 18 September 2019
1:40 PM - 3:30 PM
Location: Monterey Conf. Ctr., Steinbeck 2
Session Chairs:
Emily E. Gallagher, IMEC (Belgium) ;
Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan)
To pellicle or not to pellicle: is that really the question? (Invited Paper)
Paper 11148-32
Author(s): Michael J. Lercel, ASML Fishkill (United States); Christophe Smeets, Mark A. van de Kerkhof, Tjarko van Empel, Vadim Banine, Christian Cloin, Amo Chen, ASML Netherlands B.V. (Netherlands)
Show Abstract
CNT EUV pellicle: balancing options
Paper 11148-33
Author(s): Emily E. Gallagher, Ivan Pollentier, Marina Y. Timmermans, IMEC (Belgium); Marina Mariano Juste, KU Leuven (Belgium); Cedric Huyghebaert, IMEC (Belgium)
Show Abstract
Particle on EUV pellicle printability: how clean is clean enough from an imaging perspective?
Paper 11147-26
Author(s): Michiel Kupers, Gijsbert Rispens, Lokesh Devaraj, Gerardo Bottiglieri, Twan van den Hoogenhoff, Par Broman, ASML Netherlands B.V. (Netherlands); Andreas Erdmann, Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB (Germany); Felix Wahlisch, ASML Netherlands B.V. (Netherlands)
Show Abstract
Standalone tools for actinic EUV pellicle qualification
Paper 11147-27
Author(s): Rainer Lebert, Andreas Biermanns-Föth, Christian Pampfer, Christoph Phiesel, Thomas Missalla, Jennifer Arps, Gordon Staab, Christian Piel, RI Research Instruments GmbH (Germany)
Show Abstract
EUV pelllicle durability comparison for better lifetime
Paper 11147-28
Author(s): HyoGyeong Shin, Hye-Keun Oh, Hanyang Univ. (Korea, Republic of)
Show Abstract
Session 9:
EUV Resist and Material
Wednesday 18 September 2019
4:00 PM - 5:50 PM
Location: Monterey Conf. Ctr., Steinbeck 3
Session Chairs:
Takahiro Kozawa, Osaka Univ. (Japan) ;
Paul Graeupner, Carl Zeiss SMT GmbH (Germany)
Theoretical study of line edge roughness and stochastic defect generation (Invited Paper)
Paper 11147-29
Author(s): Takahiro Kozawa, Osaka Univ. (Japan)
Show Abstract
High-Z metal-based underlayer to improve EUV stochastics
Paper 11147-30
Author(s): Anuja De Silva, Jennifer Church, Dominik Metzler, Luciana Meli, IBM Research (United States); Phil Friddle, Bhaskar Nagabhirava, Rich Wise, Nader Shamma, Lam Research Corp. (United States)
Show Abstract
Understanding electron driven EUV chemistry
Paper 11147-31
Author(s): Jonathan H. Ma, Andrew R. Neureuther, Univ. of California, Berkeley (United States); Patrick Naulleau, The Ctr. for X-Ray Optics, Lawrence Berkeley National Lab. (United States)
Show Abstract
Leveraging chemical contrast to spotlight the latent profile of novel resists
Paper 11147-32
Author(s): Isvar A. Cordova, The Ctr. for X-Ray Optics, Lawrence Berkeley National Lab. (United States); Guillaume Freychet, Brookhaven National Lab. (United States); Luke Long, Univ. of California, Berkeley (United States); Scott Dhuey, Cheng Wang, Lawrence Berkeley National Lab. (United States); Patrick Naulleau, The Ctr. for X-Ray Optics, Lawrence Berkeley National Lab. (United States)
Show Abstract
Measurement of latent image in chemically amplified resist
Paper 11147-33
Author(s): Luke Long, Univ. of California, Berkeley (United States); Isvar Cordova, The Ctr. for X-Ray Optics, Lawrence Berkeley National Lab. (United States); Andrew Neureuther, Univ. of California, Berkeley (United States); Patrick Naulleau, The Ctr. for X-Ray Optics, Lawrence Berkeley National Lab. (United States)
Show Abstract
Thursday 19 September Show All Abstracts
Announcements
Thursday 19 September 2019
8:00 AM - 8:10 AM
Location: Monterey Conf. Ctr., Steinbeck 3
Session 10:
High-NA and EUV Imaging
Thursday 19 September 2019
8:10 AM - 10:00 AM
Location: Monterey Conf. Ctr., Steinbeck 3
Session Chairs:
Kars Troost, ASML Netherlands B.V. (Netherlands) ;
Harry J. Levinson, HJL Lithography (United States)
High-NA EUV Lithography exposure tool: program progress and mask impact (Invited Paper)
Paper 11147-34
Author(s): Jan Van Schoot, Eelco van Setten, Kars Troost, Sjoerd Lok, Judon Stoeldraijer, Rudy Peeters, Jos Benschop, ASML Netherlands B.V. (Netherlands); Joerg Zimmermann, Paul Graeupner, Peter Kuerz, Winfried Kaiser, Carl Zeiss SMT GmbH (Germany)
Show Abstract
Progress overview of EUV resists status towards high-NA EUV lithography
Paper 11147-35
Author(s): Xiaolong Wang, Li-Ting Tseng, Chia-kai Yeh, Iacopo Mochi, Michaela Vockenhuber, Paul Scherrer Institut (Switzerland); Lidia van Lent-Protasova, Rolf Custers, Gijsbert Rispens, Rik Hoefnagels, ASML Netherlands B.V. (Netherlands); Yasin Ekinci, Paul Scherrer Institut (Switzerland)
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Status and performance of the 0.5-NA EUV microfield exposure tool at Berkeley Lab
Paper 11147-36
Author(s): Christopher N. Anderson, Lawrence Berkeley National Lab. (United States)
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Overlay corrections: are we trading improved overlay for degraded imaging?
Paper 11147-37
Author(s): Daniel Schmidt, IBM Thomas J. Watson Research Ctr. (United States); Roger Cornell, Cornell Hartstone LLC (United States); Michael E. Kling, KLA Corp. (United States); Allen Gabor, IBM Thomas J. Watson Research Ctr. (United States); Christopher Ausschnitt, IMEC (Belgium)
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OPC model building for EUV lithography
Paper 11147-38
Author(s): Benjamin C. P. Ho, Micron Technology, Inc. (United States)
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Session 11:
EUV Stochastic II and Future
Thursday 19 September 2019
10:30 AM - 12:20 PM
Location: Monterey Conf. Ctr., Steinbeck 3
Session Chairs:
Kurt G. Ronse, IMEC (Belgium) ;
Anuja De Silva, IBM Thomas J. Watson Research Ctr. (United States)
Imec's defect reduction strategies for EUV single exposed 32nm pitch line and space patterns (Invited Paper)
Paper 11147-39
Author(s): Philippe Foubert, Paulina Rincon, IMEC (Belgium)
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Stochastic defects in EUV lithography analyzed by spatially correlated probability model, reaction-limited or scattering-limited?
Paper 11147-40
Author(s): Hiroshi Fukuda, Hitachi High-Technologies Corp. (Japan)
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An analysis of EUV resist stochastic printing failures
Paper 11147-41
Author(s): Martha I. Sanchez, Gregory M. Wallraff, IBM Research - Almaden (United States); William D. Hinsberg, Columbia Hill Technical Consulting (United States)
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Approaches to modulating stochastic effects in EUV lithography
Paper 11147-42
Author(s): Luciana Meli, Anuja De Silva, IBM Corp. (United States); Dario Goldfarb, IBM Thomas J. Watson Research Ctr. (United States); Jennifer Church, Martin Burkhardt, Chris Robinson, Mary Breton, Nelson Felix, IBM Corp. (United States)
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The future of the electronics industry beyond 2D/3D scaling
Paper 11147-43
Author(s): Paolo A. Gargini, International Roadmap for Devices and Systems, IEUVI (United States)
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Closing Remarks
Thursday 19 September 2019
12:20 PM - 12:30 PM
Location: Monterey Conf. Ctr., Steinbeck 3
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