Monterey Conference Center and Monterey Marriott
Monterey, California, United States
17 - 20 September 2018
Conference 10809
International Conference on Extreme Ultraviolet Lithography 2018
Monday - Thursday 17 - 20 September 2018
Conference
Committee
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Program Committee
Monday 17 September Show All Abstracts
Opening Remarks: Joint with conferences 10809 and 10810
Monday 17 September 2018
8:00 AM - 8:20 AM
Location: Monterey Conference Center, Steinbeck II
Session 1:
Plenary Session: Joint session with conferences 10809 and 10810.
Monday 17 September 2018
8:20 AM - 9:40 AM
Location: Monterey Conference Center, Steinbeck II
Session Chairs:
Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States) ;
Frank E. Abboud, Intel Corp. (United States)
Accelerate lithography improvement for high-performance computing (Plenary Presentation)
Paper 10809-1
Author(s): John Y. Chen, NVIDIA Corp. (United States)
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Current Challenges and Opportunities for EUV Lithography (Plenary Presentation)
Paper 10809-2
Author(s): Timothy A. Brunner, GLOBALFOUNDRIES Inc. (United States)
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EUV Lithography Opening Remarks
Monday 17 September 2018
10:10 AM - 10:20 AM
Location: Monterey Conference Center, Steinbeck III
Session 2:
EUV Scanner and Source
Monday 17 September 2018
10:20 AM - 12:10 PM
Location: Monterey Conference Center, Steinbeck III
Session Chairs:
Chang-Moon Lim, SK Hynix, Inc. (Korea, Republic of) ;
Takayuki Uchiyama, EIDEC (Japan)
NXE:3400B scanner, EUV high-volume manufacturing for 7nm node lithography and beyond (Invited Paper)
Paper 10809-3
Author(s): Marcel Mastenbroek, ASML Netherlands B.V. (Netherlands)
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NXE:3400B imaging performance assessed from a customer perspective
Paper 10809-4
Author(s): Friso Wittebrood, Guido Schiffelers, Colette Legein, ASML Netherlands B.V. (Netherlands)
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Long collector mirror lifetime demonstration around 100W average LP-EUV source for semiconductor high volume manufacturing
Paper 10809-5
Author(s): Hakaru Mizoguchi, Hiroaki Nakarai, Tamotsu Abe, Yasufumi Kawasuji, Hiroshi Tanaka, Yukio Watanabe, Tsukasa Hori, Takeshi Kodema, Yutaka Shiraishi, Tatsuya Yanagida, Georg Soumagne, Tsuyoshi Yamada, Taku Yamazaki, Takashi Saitou, Gigaphoton Inc. (Japan)
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Accelerator-based compact extreme ultraviolet (EUV) sources for lithography
Paper 10809-6
Author(s): Juhao Wu, Alexander W. Chao, SLAC National Accelerator Lab. (United States)
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Upgrade plan of cERL for the POC as a first stage of the development on EUV-FEL high power light source
Paper 10809-7
Author(s): Hiroshi Kawata, Norio Nakamura, Ryukou Kato, High Energy Accelerator Research Organization, KEK (Japan)
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Lunch Break 12:10 PM - 1:40 PM
Session 3:
EUV Process Control
Monday 17 September 2018
1:40 PM - 3:30 PM
Location: Monterey Conference Center, Steinbeck III
Session Chairs:
Anuja De Silva, IBM Corp. (United States) ;
Danilo De Simone, IMEC (Belgium)
EUV stochastic defect monitoring with advanced broadband optical wafer inspection and e-beam review systems (Invited Paper)
Paper 10809-8
Author(s): Kaushik Sah, KLA-Tencor Corp. (United States); Andrew Cross, KLA-Tencor England (United Kingdom); Martin Plihal, Vidyasagar Anantha, Raghav Babulnath, KLA-Tencor Corp. (United States); Peter De Bisschop, Sandip Halder, imec (Belgium); Derek Fung, KLA-Tencor Corp. (United States)
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Non-Gaussian CD distribution characterization for DRAM application in EUV lithography
Paper 10809-9
Author(s): Alessandro Vaglio Pret, KLA-Tencor Texas (United States); Inhwan Lee, Mijung Lim, SK Hynix, Inc. (Korea, Republic of); Trey Graves, David Blankenship, Stewart A. Robertson, John J. Biafore, KLA-Tencor Texas (United States)
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Advanced modeling of anisotropic stochastics in EUV resist
Paper 10809-10
Author(s): Luke Long, Andrew Neureuther, Univ. of California, Berkeley (United States); Patrick Naulleau, Lawrence Berkeley National Lab. (United States)
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Massive CD metrology for EUV failure characterization and EPE metrology
Paper 10809-11
Author(s): Harm Dillen, ASML Netherlands B.V. (Netherlands); Yi-Hsin Chang, Fei Wang, Marc Kea, ASML US, Inc. (United States); Gijsbert Rispens, Marleen Kooiman, ASML Netherlands B.V. (Netherlands); Stefan Hunsche, Fuming Wang, ASML US, Inc. (United States); Jo Finders, ASML Netherlands B.V. (Netherlands)
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Using machine learning algorithms to understand stochastic behaviour of EUV based patterning for N7 and smaller nodes
Paper 10809-12
Author(s): Sandip Halder, Philippe Leray, imec (Belgium)
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Selected Poster Speed Talks: Joint Session with conferences 10809 and 10810
Monday 17 September 2018
4:00 PM - 5:50 PM
Location: Monterey Conference Center, Steinbeck III
Session Chairs:
Eric Hendrickx, imec (Belgium) ;
Emily E. Gallagher, imec (Belgium) ;
Jed H. Rankin, GLOBALFOUNDRIES Inc. (United States)

10-minute Speed Talks from:

Intra-field mask-to-mask overlay: separating the mask writing from the dynamic pellicle contribution (PMJ18 Best Poster) Paper 10810-38
Author: Richard J. F. van Haren, ASML Netherlands B.V. (Netherlands)

Deep learning primer: data is the new source code (Invited Paper) Paper 10810-1
Author(s): Aki Fujimura, Mike Meyer, D2S, Inc. (United States); Noriaki Nakayamada, NuFlare Technology, Inc. (Japan)

Operational and productization status of Adlyte’s light source for actinic patterned mask inspection HVM tools Paper 10809-55
Author: Fariba Abhari, Adlyte (Switzerland)

EUV pupil optimization for 32nm pitch logic structures Paper 10809-66
Author(s): David Rio, ASML (Belgium); Victor M. Blanco Carballo, Joern-Holger Franke, imec (Belgium); Mircea V. Dusa, Etienne De Poortere, ASML (Belgium); Serge Biesemans, Kathleen Nafus, Tokyo Electron Europe Ltd. (Belgium); Werner Gillijns, Eric Hendrickx, imec (Belgium); Paul van Adrichem, Kateryna Lyakhova, ASML Netherlands B.V. (Netherlands); Chris A. Spence, ASML San Jose (United States)

A number of poster authors will be selected to give a short overview of their upcoming poster.
Session PS:
Poster Sessions
Monday 17 September 2018
6:00 PM - 7:30 PM
Location: Marriott, San Carlos Foyer

Symposium attendees are invited to attend the poster session on Monday evening in the Monterey Marriott, San Carlos Foyer, Mezzanine Level. Authors will be present during the poster reception for the from 6:00 pm to 7:30 pm to answer questions and provide in-depth discussion regarding their work.

Attendees are requested to wear their conference registration badge.
Session PS1:
Poster Session: EUV Mask
Monday 17 September 2018
6:00 PM - 7:30 PM
Location: Marriott, San Carlos Foyer
Validation of EUV mask defect disposition using SEM-2-Aerial
Paper 10809-42
Author(s): Gisung Yoon, Daniel Price, Paul A. Morgan, Daniel Rost, Micron Technology, Inc. (United States); Masaki Satake, Vikram L. Tolani, Dean Yonenaga, KLA-Tencor Corp. (United States)
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Optimization of absorber and multilayer in EUV mask for 1D and 2D patterns
Paper 10809-43
Author(s): Zhizhen Yang, North China Univ. of Technology (China); Lisong Dong, Yayi Wei, Institute of Microelectronics (China); Jing Zhang, Jiang Yan, Yanrong Wang, North China Univ. of Technology (China); Taian Fan, Institute of Microelectronics (China)
Show Abstract
Holographic masks for computational proximity lithography with EUV radiation
Paper 10809-44
Author(s): Valerie Deuter, Forschungszentrum Jülich GmbH (Germany), RWTH Aachen Univ. (Germany); Maciej Grochowicz, RWTH Aachen Univ. (Germany), Warsaw Univ. of Technology (Poland); Jan Biller, RWTH Aachen Univ. (Germany), Forschungszentrum Jülich GmbH (Germany); Sascha Brose, Thomas Taubner, RWTH Aachen Univ. (Germany); Agnieszka Siemion, Warsaw Univ. of Technology (Poland); Detlev Grützmacher, Forschungszentrum Jülich GmbH (Germany); Larissa Juschkin, RWTH Aachen Univ. (Germany), Forschungszentrum Jülich GmbH (Germany)
Show Abstract
Mask 3D effects experimental measurements with NA 0.55 anamorphic imaging
Paper 10809-45
Author(s): Vincent Wiaux, Vicky Philipsen, Eric Hendrickx, imec (Belgium)
Show Abstract
Extreme ultraviolet pellicle cooling by hydrogen gas flow
Paper 10809-46
Author(s): Hye-Lim Lee, Sung-Gyu Lee, Jae-Hun Park, Hye-Keun Oh, Hanyang Univ. (Korea, Republic of)
Show Abstract
Maximizing thermal emission characteristics of EUV pellicle
Paper 10809-47
Author(s): Yong Ju Jang, Seong Ju Wi, Hanyang Univ. (Korea, Republic of); Juhee Hong, Kee Soo Nam, S&S TECH (Korea, Republic of); Jinho Ahn, Hanyang Univ. (Korea, Republic of)
Show Abstract
Mechanical property enhancement of SiNx pellicle layer by graphene
Paper 10809-48
Author(s): Seong In Kim, Gangwon Technopark (Korea, Republic of); Jinho Ahn, Hanyang Univ. (Korea, Republic of)
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EUV-PTT: The EUV pellicle transmission mapping tool
Paper 10809-49
Author(s): Rainer Lebert, Christian Pampfer, Andreas Biermanns-Foeth, Thomas Missalla, Christoph Phiesel, Jennifer Arps, Christian Piel, RI Research Instruments GmbH (Germany)
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Evaluation of mechanical strength improvement by stress improvement of EUV pellicle membrane
Paper 10809-50
Author(s): Gi-Sung Lee, Gap-Sub Sim, Dongeun Yoo, National Nanofab Ctr. (Korea, Republic of)
Show Abstract
Pattern degradation with larger particles on EUV pellicle
Paper 10809-51
Author(s): Hee-Ra No, Sung-Gyu Lee, Hye-Keun Oh, Hanyang Univ. (Korea, Republic of)
Show Abstract
Defect avoidance for extreme-ultraviolet mask defects using intentional pattern deformation
Paper 10809-52
Author(s): Yoo-Jin Chae, Puneet Gupta, Univ. of California, Los Angeles (United States); Rik Jonckheere, IMEC (Belgium)
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AIMERTM: full reticle area, scanner-effective EUV reflectometry mapping
Paper 10809-53
Author(s): Rainer Lebert, Christoph Phiesel, Andreas Biermanns-Foeth, Jennifer Arps, Thomas Missalla, Christian Piel, RI Research Instruments GmbH (Germany)
Show Abstract
History of actinic inspection of phase defects on EUVL mask blanks
Paper 10809-54
Author(s): Tosihisa Tomie, Changchun Univ. of Science and Technology (China)
Show Abstract
Session PS2:
Poster Session: EUV Source
Monday 17 September 2018
6:00 PM - 7:30 PM
Location: Marriott, San Carlos Foyer
Operational and productization status of Adlyte’s light source for actinic patterned mask inspection HVM tools
Paper 10809-55
Author(s): Fariba Abhari, Adlyte (Switzerland)
Show Abstract
NXE:3400B EUV source performance in the field, readiness for high volume manufacturing and power scaling beyond 250W
Paper 10809-56
Author(s): Igor V. Fomenkov, Michael A. Purvis, Alexander A. Schafgans, Yezheng Tao, Slava Rokitski, Jayson Stewart, Andrew LaForge, Alexander I. Ershov, Robert J. Rafac, Silvia De Dea, Chirag Rajyaguru, Georgiy O. Vaschenko, Mathew Abraham, David C. Brandt, Daniel J. Brown, ASML US, LP (United States)
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Key components development progress of high-power LPP-EUV light source with unique debris mitigation system using a magnetic field
Paper 10809-57
Author(s): Yuichi Nishimura, Tsukasa Hori, Takayuki Yabu, Katsuhiko Wakana, Yoshifumi Ueno, Georg Soumagne, Shinji Nagai, Tatsuya Yanagida, Yasufumi Kawasuji, Yutaka Shiraishi, Tamotsu Abe, Hiroaki Nakarai, Takashi Saito, Hakaru Mizoguchi, Gigaphoton Inc. (Japan)
Show Abstract
Collector cleaning by surface wave plasma in the Illinois NXE:3100 chamber
Paper 10809-58
Author(s): Gianluca A. Panici, Dren Qerimi, David N. Ruzic, Univ. of Illinois (United States)
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Cost-of-ownership improvements for droplet-based LPP EUV light source for HVM APMI applications
Paper 10809-59
Author(s): Reza S. Abhari, Markus Brandstätter, Jeremy Nickol, Marco Weber, Duane Hudgins, Flori Alickaj , ETH Zurich (Switzerland); Fariba Abhari, Adlyte (Switzerland)
Show Abstract
The Impact of the sub-fab on the availability of EUVL
Paper 10809-60
Author(s): Anthony M. Keen, Edwards Ltd. (United Kingdom); Niall Walsh, Cansin Badan, Jos Donders, Edwards (Netherlands)
Show Abstract
High brightness light source based on LPP for actinic EUV nanoscopy and metrology applications
Paper 10809-61
Author(s): Konstantin Koshelev, EUV Labs, Ltd. (Russian Federation), Institute of Spectroscopy (Russian Federation), RnD-ISAN (Russian Federation); Alexander Vinokhodov, Oleg Yakushev, Alexey Yakushkin, Dimitri Abramenko, Alexander Lash, Mikhail Krivokorytov, Yuri Sidelnikov, Vladimir Ivanov, Vladimir Krivtsun, Vyacheslav Medvedev, EUV Labs, Ltd. (Russian Federation), RnD-ISAN (Russian Federation); Denis Glushkov, Pavel Seroglazov, Samir Ellwi, ISTEQ (Netherlands); Rainer Lebert, RI Research Instruments GmbH (Germany)
Show Abstract
A possible wafer heating during EUV exposure
Paper 10809-62
Author(s): Se-Hun Oh, Sung-Gyu Lee, Jae-Hun Park, Chung-Hyun Ban, Hye-Keun Oh, Hanyang Univ. (Korea, Republic of)
Show Abstract
Session PS3:
Poster Session: Imaging/Optics
Monday 17 September 2018
6:00 PM - 7:30 PM
Location: Marriott, San Carlos Foyer
Lateral shearing interferometry for high-NA EUV wavefront measurement
Paper 10809-63
Author(s): Wenhua Zhu, Ryan H. Miyakawa, Patrick Naulleau, Lawrence Berkeley National Lab. (United States)
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Reflectance measurement of EUV mirrors with s- and p-polarization light using polarization control unit
Paper 10809-64
Author(s): Tetsuo Harada, Takeo Watanabe, Univ. of Hyogo (Japan)
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Spatially resolved reflectometry for EUV optical components
Paper 10809-65
Author(s): Frank Scholze, Andreas Fischer, Claudia Fotso-Kwamou, Victor Soltwisch, Christian Laubis, Physikalisch-Technische Bundesanstalt (Germany)
Show Abstract
EUV pupil optimization for 32nm pitch logic structures
Paper 10809-66
Author(s): David Rio, ASML (Belgium); Victor M. Blanco Carballo, Joern-Holger Franke, imec (Belgium); Mircea V. Dusa, Etienne De Poortere, ASML (Belgium); Serge Biesemans, Kathleen Nafus, Tokyo Electron Europe Ltd. (Belgium); Werner Gillijns, Eric Hendrickx, imec (Belgium); Paul van Adrichem, Kateryna Lyakhova, ASML Netherlands B.V. (Netherlands); Chris A. Spence, ASML San Jose (United States)
Show Abstract
Session PS4:
Poster Session: Materials
Monday 17 September 2018
6:00 PM - 7:30 PM
Location: Marriott, San Carlos Foyer
Actinic tools for EUV photoresist characterization in research and production
Paper 10809-67
Author(s): Rainer Lebert, Christoph Phiesel, Christian Piel, RI Research Instruments GmbH (Germany); Sascha Brose, Serhiy Danylyuk, Peter Loosen, RWTH Aachen Univ. (Germany); Klaus Bergmann, Jochen Vieker, Fraunhofer-Institut für Lasertechnik (Germany)
Show Abstract
In-situ measurement of outgassing generated from EUV metal oxide nanoparticles resist
Paper 10809-68
Author(s): Yoichi Minami, Litho Tech Japan Co., Ltd. (Japan)
Show Abstract
EUV sensitizer for resists and spin-on-carbon materials
Paper 10809-69
Author(s): Takashi Sato, Yuta Togashi, Sachiko Shinjo, Takumi Toida, Masatoshi Echigo, Mitsubishi Gas Chemical Co., Inc. (Japan)
Show Abstract
Development of absorption-coefficient-measurement method of EUV resist by direct-resist coating on a photodiode
Paper 10809-70
Author(s): Shota Niihara, Tetsuo Harada, Takeo Watanabe, Univ. of Hyogo (Japan)
Show Abstract
Studying resist performance for contact holes printing using EUV interference lithography
Paper 10809-71
Author(s): Xiaolong Wang, Li-Ting Tseng, Dimitrios Kazazis, Zuhal Tasdemir, Michaela Vockenhuber, Iacopo Mochi, Yasin Ekinci, Paul Scherrer Institut (Switzerland)
Show Abstract
Session PS5:
Poster Session: Process Control
Monday 17 September 2018
6:00 PM - 7:30 PM
Location: Marriott, San Carlos Foyer
Litho performance improvement with novel track processing
Paper 10809-72
Author(s): Harold W. Stokes, SCREEN Semiconductor Solutions Co., Ltd. (Belgium); Masahiko Harumoto, Yuji Tanaka, Chisayo Nakayama, Charles Pieczulewski, SCREEN Semiconductor Solutions Co., Ltd. (Japan)
Show Abstract
Study of roughness components in the frequency domain via experimental and simulated images
Paper 10809-73
Author(s): Alessandro Vaglio Pret, John J. Biafore, KLA-Tencor Texas (United States); Chris A. Mack, Fractilia, LLC (United States)
Show Abstract
Track based techniques to improve high-resolution EUV patterning defectivity
Paper 10809-74
Author(s): Naoki Shibata, Lior Huli, Corey Lemley, TEL Technology Ctr., America, LLC (United States); Shinichiro Kawakami, Tokyo Electron Kyushu Ltd. (Japan); Karen Petrillo, Luciana Meli, Nelson M. Felix, Cody Murray, Alex Hubbard, Rick Johnson, IBM Corp. (United States); Dave Hetzer, TEL Technology Ctr., America, LLC (United States)
Show Abstract
Bridging the defect gap in EUV photoresist
Paper 10809-75
Author(s): Tetsu Kohyama, Nihon Entegris K.K. (Japan)
Show Abstract
Improvement of CD stability and defectivity in resist coating and developing process in EUV lithography process
Paper 10809-76
Author(s): Yuya Kamei, Tokyo Electron Kyushu Ltd. (Belgium); Shinichiro Kawakami, Masahide Tadokoro, Yusaku Hashimoto, Takeshi Shimoaoki, Masashi Enomoto, Tokyo Electron Kyushu Ltd. (Japan); Kathleen Nafus, Tokyo Electron Kyushu Ltd. (Belgium); Akihiro Sonoda, Tokyo Electron Ltd. (Japan); Philippe Foubert, IMEC (Belgium)
Show Abstract
Tuesday 18 September Show All Abstracts
Announcements
Tuesday 18 September 2018
8:00 AM - 8:10 AM
Location: Monterey Conference Center, Steinbeck III
Session 4:
EUV Mask Blanks: Joint Session with conferences 10809 and 10810
Tuesday 18 September 2018
8:10 AM - 10:00 AM
Location: Monterey Conference Center, Steinbeck II
Session Chairs:
Takahiro Onoue, HOYA Corp. (Japan) ;
Paul A. Morgan, Micron Technology, Inc. (United States)
Novel EUV mask absorber evaluation in support of next-generation EUV imaging (Invited Paper)
Paper 10810-11
Author(s): Vicky Philipsen, imec (Belgium); Vu Luong, IMEC (Belgium); Karl Opsomer, imec (Belgium); Andreas Erdmann, Peter Evanschitzky, Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB (Germany); Frank Scholze, Christian Laubis, Physikalisch-Technische Bundesanstalt (Germany); Robbert W. E. van de Kruijs, Zahra Heidarnia-Fathabad, Univ. Twente (Netherlands); Eric Hendrickx, imec (Belgium)
Show Abstract
Requirements and development of next-generation EUV mask blanks
Paper 10810-12
Author(s): Vibhu Jindal, Grace Fong, Shuwei Liu, Binni Varghese, Madhavi Chandrachood, Abbas Rastegar, Vikash Banthia, Applied Materials, Inc. (United States)
Show Abstract
Cleaning durability of the applied materials EUV mask blanks for sub-10nm HP nodes
Paper 10809-13
Author(s): Abbas Rastegar, Applied Materials, Inc. (United States); Sankesha Bhoyar, Khim Tiong Soon, Applied Materials South East Asia Pte. Ltd. (Singapore); Vik Banthia, Applied Materials, Inc. (United States)
Show Abstract
Advances in high-volume manufacturing of EUV mask blanks: current status and roadmap
Paper 10809-14
Author(s): Katrina Rook, Meng Lee, Sandeep Kohli, Veeco Instruments Inc. (United States); Frank Cerio, Havas Formula (United States); Boris Druz, Adrian Devasahayam, Veeco Instruments Inc. (United States)
Show Abstract
Session 5:
EUV Materials I
Tuesday 18 September 2018
10:30 AM - 12:20 PM
Location: Monterey Conference Center, Steinbeck III
Session Chairs:
Takahiro Kozawa, Osaka Univ. (Japan) ;
Anna Lio, Intel Corp. (United States)
Recent progress of materials and processes for EUV lithography. Ready for HVM? (Invited Paper)
Paper 10809-15
Author(s): Toru Fujimori, FUJIFILM Corp. (Japan)
Show Abstract
Pattern formation mechanism of zirconia nanoparticle resist used for extreme-ultraviolet lithography
Paper 10809-16
Author(s): Takahiro Kozawa, Teppei Yamada, Satoshi Ishihara, Hiroki Yamamoto, Yusa Muroya, Osaka Univ. (Japan); Julius Joseph S. Santillan, Toshiro Itani, Evolving Nano-process Infrastructure Development Ctr., Inc. (Japan)
Show Abstract
Analysis of resist film stability of metal-based EUV resists
Paper 10809-17
Author(s): Julius Joseph S. Santillan, Toshiro Itani, Evolving Nano-process Infrastructure Development Ctr., Inc. (Japan)
Show Abstract
Progress in multi-trigger resists for EUV lithography
Paper 10809-18
Author(s): Carmen Popescu, The Univ. of Birmingham (United Kingdom); Alexandra McClelland, Irresistible Materials Ltd. (United Kingdom); Guy Dawson, The Univ. of Birmingham (United Kingdom); John Roth, Nano-C, Inc. (United States); Yannick Vesters, imec (Belgium), KU Leuven (Belgium); Dimitrios Kazazis, Yasin Ekinci, Paul Scherrer Institut (Switzerland); Wolfgang Theis, The Univ. of Birmingham (United Kingdom); Danilo De Simone, Geert Vandenberghe, imec (Belgium); Alex P. G. Robinson, The Univ. of Birmingham (United Kingdom), Irresistible Materials Ltd. (United Kingdom)
Show Abstract
Evaluation of EUV resists for 5nm technology node and beyond
Paper 10809-19
Author(s): Zuhal Tasdemir, Xiaolong Wang, Iacopo Mochi, Paul Scherrer Institut (Switzerland); Lidia van Lent-Protasova, Marieke Meeuwissen, Rolf Custers, Gijsbert Rispens, Rik Hoefnagels, ASML Netherlands B.V. (Netherlands); Yasin Ekinci, Paul Scherrer Institut (Switzerland)
Show Abstract
Wednesday 19 September Show All Abstracts
Announcements
Wednesday 19 September 2018
8:00 AM - 8:10 AM
Location: Monterey Conference Center, Steinbeck III
Session 6:
EUV Mask and Imaging: Joint Session with conferences 10809 and 10810
Wednesday 19 September 2018
8:10 AM - 10:00 AM
Location: Monterey Conference Center, Steinbeck II
Session Chairs:
Jo Finders, ASML Netherlands B.V. (Netherlands) ;
Ted Liang, Intel Corp. (United States)
AIMSTM EUV first insertion into the back end of the line of a mask shop: a crucial step enabling EUV production (Invited Paper)
Paper 10810-29
Author(s): Renzo Capelli, Carl Zeiss SMT GmbH (Germany); Nathan Wilcox, Intel Corp. (United States); Dirk Hellweg, Martin Dietzel, Carl Zeiss SMT GmbH (Germany); Scott Chegwidden, Joseph Rodriguez, Intel Corp. (United States)
Show Abstract
Optimization and stability assessment of the CD variability in pitch 40nm contact holes on NXE:3300
Paper 10809-20
Author(s): Lieve van Look, Joost Bekaert, imec (Belgium); Andreas Frommhold, IMEC (Belgium); Eric Hendrickx, imec (Belgium); Gijsbert Rispens, Guido Schiffelers, ASML Netherlands B.V. (Netherlands)
Show Abstract
Enhanced EUV lithographic performance through advanced SMO, RET, and novel EUV mask absorber
Paper 10809-21
Author(s): Germain L. Fenger, Mentor Graphics Corp. (United States); Ana-Maria Armeanu, Mentor Graphics (Ireland) Ltd. (France); Vicky Philipsen, imec (Belgium); Fan Jiang, Neal Lafferty, Mentor, a Siemens Business (United States); Eric Hendrickx, IMEC (Belgium); John Sturtevant, Mentor, a Siemens Business (United States)
Show Abstract
Pattern shift response metrology
Paper 10810-30
Author(s): Kit Ausschnitt, Vincent Truffert, Koen D'Have, Philippe Leray, imec (Belgium)
Show Abstract
Rapid image-based pupil plane characterization for EUV lithography systems
Paper 10809-22
Author(s): Zachary Levinson, Rochester Institute of Technology (United States); Erik Verduijn, Timothy A. Brunner, Obert Wood, GLOBALFOUNDRIES Inc. (United States); Bruce W. Smith, Rochester Institute of Technology (United States)
Show Abstract
Session 7:
EUV Inspection, Repair, and Verification: Joint Session with conferences 10809 and 10810
Wednesday 19 September 2018
10:30 AM - 12:20 PM
Location: Monterey Conference Center, Steinbeck II
Session Chairs:
Yasin Ekinci, Paul Scherrer Institut (Switzerland) ;
Thomas Scherübl, Carl Zeiss SMT GmbH (Germany)
Progress update on actinic mask inspection and observation (Invited Paper)
Paper 10809-23
Author(s): Hiroki Miyai, Tsunehito Kohyama, Tomohiro Suzuki, Hirokazu Seki, Hal Kusunose, Lasertec Corp. (Japan)
Show Abstract
Phase defect inspection on EUV masks using RESCAN
Paper 10809-24
Author(s): Rajendran Rajeev, Sara Fernandez, Iacopo Mochi, Patrick Helfenstein, Dimitrios Kazazis, Yasin Ekinci, Paul Scherrer Institut (Switzerland)
Show Abstract
E-beam based EUV mask characterization for studying mask induced wafer effects
Paper 10810-31
Author(s): Vidya Vaenkatesan, ASML Netherlands B.V. (Netherlands); Qing Tian, Hermes-Microvision Inc., USA (United States); Emily Gallagher, imec (Belgium); Jim Wiley, ASML US, Inc. (United States); Jo Finders, Michael Kubis, Jan Mulkens, ASML Netherlands B.V. (Netherlands); Chiyan Kuan, Kevin Gao, Hermes-Microvision Inc., USA (United States)
Show Abstract
AIMSTM EUV tool platform: aerial-image based qualification of EUV masks
Paper 10810-32
Author(s): Renzo Capelli, Dirk Hellweg, Martin Dietzel, Ralf Gehrke, Markus Bauer, Markus Koch, Carl Zeiss SMT GmbH (Germany)
Show Abstract
A high-brightness accelerator-based EUV source for actinic mask inspection
Paper 10810-33
Author(s): Yasin Ekinci, Terence Garvey, Andreas Streun, Albin Wrulich, Leonid Rivkin, Paul Scherrer Institut (Switzerland)
Show Abstract
Lunch/Exhibition Break 12:20 PM - 1:50 PM
Session 8:
EUV Pellicle and Metrology: Joint Session with conferences 10809 and 10810
Wednesday 19 September 2018
1:50 PM - 3:40 PM
Location: Monterey Conference Center, Steinbeck II
Session Chairs:
Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan) ;
Byung Gook Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
EUV pellicle progresses and future outlook (Invited Paper)
Paper 10810-34
Author(s): Guido Salmaso, ASML Netherlands B.V. (Netherlands)
Show Abstract
Development of full-size EUV pellicle with thermal emission layer coating
Paper 10809-25
Author(s): Juhee Hong, Chulkyun Park, Changhun Lee, Keesoo Nam, S&S TECH (Korea, Republic of); Yongju Jang, Seong Ju Wi, Jinho Ahn, Hanyang Univ. (Korea, Republic of)
Show Abstract
Experimental evaluation of EUV pellicles on reticle imaging
Paper 10810-35
Author(s): Iacopo Mochi, Rajendran Rajeev, Patrick Helfenstein, Sara Fernandez, Dimitrios Kazazis, Yasin Ekinci, Paul Scherrer Institut (Switzerland); Emily Gallagher, Marina Timmermans, Marina Mariano Juste, Ivan Pollentier, imec (Belgium)
Show Abstract
Actinic laboratory EUV tools for mask and pellicle metrology
Paper 10809-26
Author(s): Serhiy Danylyuk, Lukas Bahrenberg, Sascha Brose, RWTH Aachen Univ. (Germany); Rainer Lebert, RI Research Instruments GmbH (Germany); Jochen Stollenwerk, Peter Loosen, RWTH Aachen Univ. (Germany)
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EUV mask characterization with actinic scatterometry
Paper 10809-27
Author(s): Stuart Sherwin, Andrew Neureuther, Univ. of California, Berkeley (United States); Patrick Naulleau, Lawrence Berkeley National Lab. (United States)
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Session 9:
EUV Materials II
Wednesday 19 September 2018
4:10 PM - 6:00 PM
Location: Monterey Conference Center, Steinbeck III
Session Chairs:
Huixiong Dai, Applied Materials, Inc. (United States) ;
Toru Fujimori, FUJIFILM Corp. (Japan)
State-of-the-art of EUV materials for N5 logic and DRAM applications (Invited Paper)
Paper 10809-28
Author(s): Danilo De Simone, imec (Belgium); Yannick Vesters, imec (Belgium), KU Leuven (Belgium); Pieter Venelderen, imec (Belgium); Ashish Rathore, imec (Belgium), KU Leuven (Belgium); Ivan Pollentier, Geert Vandenberghe, imec (Belgium)
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Using resonant soft x-ray scattering to image patterns on undeveloped resists
Paper 10809-29
Author(s): Guillaume Freychet, Isvar Cordova, Terry McAfee, Chris Anderson, Cheng Wang, Patrick Naulleau, Alexander Hexemer, Dinesh Kumar, Lawrence Berkeley National Lab. (United States)
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Advances in metal oxide resist performance and production
Paper 10809-30
Author(s): Jason K. Stowers, Inpria Corp. (United States)
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New resist and underlayer approaches toward EUV lithography
Paper 10809-31
Author(s): Juha Rantala, Thomas Gädda, Markus Laukkanen, Kimmo Karaste, Luong Nguyen Dang, PiBond Oy (Finland); Dimitrios Kazizis, Yasin Ekinci, Paul Scherrer Institut (Switzerland)
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Advanced development of organic and inorganic under layers for EUV lithography
Paper 10809-32
Author(s): Wataru Shibayama, Shuhei Shigaki, Satoshi Takeda, Mamoru Tamura, Yasunobu Someya, Makoto Nakajima, Rikimaru Sakamoto, Nissan Chemical Industries, Ltd. (Japan)
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Thursday 20 September Show All Abstracts
Announcements
Thursday 20 September 2018
8:00 AM - 8:10 AM
Location: Monterey Conference Center, Steinbeck III
Session 10:
High-NA and Imaging
Thursday 20 September 2018
8:10 AM - 10:00 AM
Location: Monterey Conference Center, Steinbeck III
Session Chairs:
Gregory R. McIntyre, IMEC (Belgium) ;
Akiyoshi Suzuki, Gigaphoton Inc. (Japan)
High-NA EUV lithography exposure tool progress (Invited Paper)
Paper 10809-33
Author(s): Jan van Schoot, Eelco van Setten, Kars Troost, Frank Bornebroek, Rob van Ballegoij, Sjoerd Lok, Judon Stoeldraijer, Jo Finders, Hans Meiling, ASML Netherlands B.V. (Netherlands); Paul Graeupner, Peter Kuerz, Winfried Kaiser, Erik Loopstra, Bernhard Kneer, Sascha Migura, Carl Zeiss SMT GmbH (Germany)
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High-NA EUV lithography: The next step in EUV imaging
Paper 10809-34
Author(s): Eelco van Setten, John McNamara, Jan van Schoot, Gerardo Bottiglieri, Kars Troost, Timon Fliervoet, ASML Netherlands B.V. (Netherlands); Stephen Hsu, ASML Brion (United States); Jörg Zimmermann, Jens-Timo Neumann, Matthias Rösch, Paul Graeupner, Carl Zeiss SMT GmbH (Germany)
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Actinic 0.5-NA wavefront measurements on the Berkeley MET5 platform
Paper 10809-35
Author(s): Ryan H. Miyakawa, Wenhua Zhu, Geoff Gaines, Chris Anderson, Patrick Naulleau, Lawrence Berkeley National Lab. (United States)
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Mask imaging with freeform sources on the SHARP microscope
Paper 10809-36
Author(s): Markus P. Benk, Kenneth Goldberg, Patrick Naulleau, Lawrence Berkeley National Lab. (United States)
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Understanding image fading for EUV
Paper 10809-37
Author(s): Michael E. Kling, Timothy A. Brunner, Allen Gabor, Daniel Schmidt, Yulu Chen, GLOBALFOUNDRIES Inc. (United States); Blandine Minghetti, ASML Malta (United States); Edouard Duriau, ASML Netherlands B.V. (Netherlands)
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Session 11:
Patterning
Thursday 20 September 2018
10:30 AM - 12:00 PM
Location: Monterey Conference Center, Steinbeck III
Session Chairs:
Jan van Schoot, ASML Netherlands B.V. (Netherlands) ;
Erik R. Hosler, GLOBALFOUNDRIES Inc. (United States)
Integration via 3rd dimension: 3D power scaling (Invited Paper)
Paper 10809-38
Author(s): Paolo A. Gargini, IEUVI, IRDS (United States)
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Benchmarking of EUV lithography line/space patterning versus immersion lithography multipatterning schemes at equivalent pitch
Paper 10809-39
Author(s): Angelique Raley, TEL Technology Ctr., America, LLC (United States); Chris A. Mack, Fractilia, LLC (United States); Eric Liu, Sophie Thibaut, Jeffrey Smith, Akiteru Ko, Anton DeVilliers, Peter Biolsi, TEL Technology Ctr., America, LLC (United States)
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Study of resist hardmask interaction through surface activation layers
Paper 10809-40
Author(s): Anuja De Silva, Luciana Meli, Jing Guo, Nelson M. Felix, IBM Corp. (United States); Dario L. Goldfarb, Bharat Kumar, IBM Thomas J. Watson Research Ctr. (United States); Rudy Wojtecki, Magi Metry, Alexander Hess, IBM Research - Almaden (United States)
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Characterization of pattern dependent pattern placement error in EUV lithography for 7nm and future generations
Paper 10809-41
Author(s): Lei Zhuang, Shiyi Wang, Niladri Gomes, Roger Cornell, Timothy A. Brunner, GLOBALFOUNDRIES Inc. (United States)
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Ending Remarks
Thursday 20 September 2018
12:00 PM - 12:10 PM
Location: Monterey Conference Center, Steinbeck III
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