San Jose Convention Center
San Jose, California, United States
24 - 28 February 2019
Conference 10957
Extreme Ultraviolet (EUV) Lithography X
Monday - Thursday 25 - 28 February 2019
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Monday 25 February Show All Abstracts
AL19 Plenary Session
Monday 25 February 2019
8:00 AM - 10:30 AM
Location: Convention Center, Grand Ballroom 220A

8:00 am to 8:30 am

Welcome and Announcements
Symposium Chairs: Will Conley, Cymer, An ASML Company (USA), and Kafai Lai, IBM T. J. Watson Research Ctr. (USA)

    *Introduction of New SPIE Fellows
    *Presentation of the Zernike Awards
    *Presentation of the Nick Cobb Memorial Scholarship
The Future is Quantum (Plenary Presentation)
Paper 10957-500
Author(s): Dario Gil, IBM Research (United States)
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3D NAND Flash Technology: Roadmap, Process, Design, and Challenges (Plenary Presentation)
Paper 10957-501
Author(s): Jeongdong Choe, Techinsights (Canada)
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Patterning in the Stressful World of 3D NAND (Plenary Presentation)
Paper 10957-502
Author(s): Steven E. Steen, ASML (Netherlands)
Show Abstract
Session 1:
Keynote Session
Monday 25 February 2019
11:00 AM - 12:20 PM
Location: Convention Center, Grand Ballroom 220A
Session Chairs:
Kenneth A. Goldberg, Lawrence Berkeley National Lab. (United States) ;
Nelson M. Felix, IBM Corp. (United States)
EUVL: the natural evolution of optical microlithography (Keynote Presentation)
Paper 10957-1
Author(s): Bernd Geh, Carl Zeiss SMT GmbH (United States)
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EUV insertion strategy into logic technology on the horizon of scaling paradigm change (Keynote Presentation)
Paper 10957-2
Author(s): Ryoung-Han R. Kim, IMEC (Belgium)
Show Abstract
Lunch Break 12:20 PM - 2:00 PM
Session 2:
The Future is High NA
Monday 25 February 2019
2:00 PM - 3:20 PM
Location: Convention Center, Grand Ballroom 220A
Session Chairs:
Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States) ;
Jos P. Benschop, ASML Netherlands B.V. (Netherlands)
High-NA EUV lithography exposure tool progress (Invited Paper)
Paper 10957-3
Author(s): Jan van Schoot, Eelco van Setten, Kars Troost, Frank Bornebroek, Rob van Ballegoij, Sjoerd Lok, Judon Stoeldraijer, Jo Finders, Hans Meiling, ASML Netherlands B.V. (Netherlands); Paul Graeupner, Joerg Zimmermann, Peter Kuerz, Carl Zeiss SMT GmbH (Germany)
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Overview and status of the 0.5NA EUV microfield exposure tool at the advanced light source (Invited Paper)
Paper 10957-4
Author(s): Christopher N. Anderson, Lawrence Berkeley National Lab. (United States)
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High-NA EUV lithography: the next step in EUV imaging
Paper 10957-5
Author(s): Eelco van Setten, John McNamara, Jan van Schoot, Kars Troost, Gerardo Bottiglieri, Joseph Zekry, Timon Fliervoet, ASML Netherlands B.V. (Netherlands); Stephen Hsu, ASML San Jose (United States); Joerg Zimmermann, Jens Timo Neumann, Matthias Roesch, Paul Graeupner, Carl Zeiss SMT GmbH (Germany)
Show Abstract
Progress in EUV resists towards high-NA EUV lithography
Paper 10957-6
Author(s): Xiaolong Wang, Zuhal Tasdemir, Iacopo Mochi, Paul Scherrer Institut (Switzerland); Lidia van Lent-Protasova, Marieke Meeuwissen, Rolf Custers, Gijsbert Rispens, Rik Hoefnagels, ASML Netherlands B.V. (Netherlands); Yasin Ekinci, Paul Scherrer Institut (Switzerland)
Show Abstract
Session 3:
Inorganic Resists: Joint session with conferences 10960 and 10957
Monday 25 February 2019
3:50 PM - 5:30 PM
Location: Convention Center, Grand Ballroom 220A
Session Chairs:
Robert L. Brainard, SUNY CNSE/SUNYIT (United States) ;
Jason K. Stowers, Inpria Corp. (United States)
The role of the organic shell in hybrid molecular materials
Paper 10957-7
Author(s): Sonia Castellanos Ortega, Lianjia Wu, Neha Thakur, Olivier Lugier, Advanced Research Ctr. for Nanolithography (Netherlands)
Show Abstract
Model studies on the metal salt sensitization of chemically amplified photoresists
Paper 10960-3
Author(s): Gregory M. Wallraff, Hoa D. Truong, Martha I. Sanchez, Noel Arellano, Alexander M. Friz, Wyatt Thornley, IBM Research - Almaden (United States); Oleg Kostko, Dan S. Slaughter, Lawrence Berkeley National Lab. (United States); D. Frank Ogletree, The Molecular Foundry (United States), Lawrence Berkeley National Lab. (United States)
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Analysis of line-and-space patterns of ZrO2 nanoparticle resist on the basis of EUV sensitization mechanism
Paper 10957-8
Author(s): Takahiro Kozawa, Teppei Yamada, Yusa Muroya, Osaka Univ. (Japan); Julius J. Santillan, Toshiro Itani, Evolving Nano-process Infrastructure Development Ctr., Inc. (Japan)
Show Abstract
Model reactivity of inorganic and organometallic materials in EUV
Paper 10960-4
Author(s): Wyatt Thornley, Hoa D. Truong, Martha I. Sanchez, Daniel P. Sanders, Gregory M. Wallraff, IBM Research - Almaden (United States); Oleg Kostko, D. Frank Ogletree, Daniel S. Slaughter, Lawrence Berkeley National Lab. (United States)
Show Abstract
Study of zinc based metal oxoclusters: towards enhanced EUV absorptivity
Paper 10957-9
Author(s): Neha Thakur, Sonia Castellanos Ortega, Advanced Research Ctr. for Nanolithography (Netherlands)
Show Abstract
Tuesday 26 February Show All Abstracts
Session 4:
Stochastics and Exposure Mechanisms: Joint session with conferences 10960 and 10957
Tuesday 26 February 2019
8:00 AM - 10:00 AM
Location: Convention Center, Grand Ballroom 220C
Session Chairs:
Florian Gstrein, Intel Corp. (United States) ;
Thomas I. Wallow, ASML San Jose (United States)
Stochastic printing failures in EUV lithography (Invited Paper)
Paper 10957-10
Author(s): Peter De Bisschop, IMEC (Belgium)
Show Abstract
Fundamentals of resist stochastics effect for single-expose EUV patterning
Paper 10957-11
Author(s): Anuja De Silva, Luciana Meli, Dario L. Goldfarb, Nelson M. Felix, IBM Corp. (United States)
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Then a miracle occurs: A description of the issues of EUV radiolysis process and the relationship to stochastic print failures
Paper 10960-5
Author(s): John S. Petersen, IMEC (Belgium)
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Measuring extreme-ultraviolet secondary electron blur
Paper 10960-6
Author(s): Steven Grzeskowiak, Robert L. Brainard, Gregory H. Denbeaux, SUNY CNSE/SUNYIT (United States)
Show Abstract
Multiscale approach for modeling EUV patterning of chemically amplified resist
Paper 10960-7
Author(s): Hyungwoo Lee, Muyoung Kim, Junghwan Moon, Sungwoo Park, Seoul National Univ. (Korea, Republic of); Byunghoon Lee, Changyoung Jeong, SAMSUNG Electronics Co., Ltd. (Korea, Republic of); Maenghyo Cho, Seoul National Univ. (Korea, Republic of)
Show Abstract
The hidden energy tail of low energy electrons in EUV lithography
Paper 10960-8
Author(s): Roberto Fallica, imec (Belgium)
Show Abstract
Session 5:
Order from Chaos: Stochastic Modeling
Tuesday 26 February 2019
10:30 AM - 11:50 AM
Location: Convention Center, Grand Ballroom 220A
Session Chairs:
Sonia Castellanos Ortega, Advanced Research Ctr. for Nanolithography (Netherlands) ;
Shinji Okazaki, ALITECS Co., Ltd. (Japan)
Impact of asymmetrically localized and cascading secondary electron generation on stochastic defects in EUV lithography
Paper 10957-12
Author(s): Hiroshi Fukuda, Hitachi High-Technologies Corp. (Japan)
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Impact of local variability on defect-aware process window degradation (Invited Paper)
Paper 10957-13
Author(s): Mark John Maslow, ASML Netherlands B.V. (Netherlands); Hidetami Yaegashi, Tokyo Electron Ltd. (Japan); Andreas Frommhold, IMEC (Belgium); Guido Schiffelers, Felix Wahlisch, Gijsbert Rispens, Bram Slachter, ASML Netherlands B.V. (Netherlands); Keisuke Yoshida, Arisa Hara, Noriaki Oikawa, Tokyo Electron Ltd. (Japan); Abhinav Pathak, Eric Hendrickx, Joost Bekaert, IMEC (Belgium)
Show Abstract
Unraveling the EUV photoresist reactions: which reactions occur, how much, and how do they relate to printing performance? (Invited Paper)
Paper 10957-14
Author(s): Ivan Pollentier, John S. Petersen, Peter De Bisschop, Danilo De Simone, Geert Vandenberghe, IMEC (Belgium)
Show Abstract
OPC strategies to reduce failure rates with rigorous resist model stochastic simulations in EUVL
Paper 10957-15
Author(s): Alessandro Vaglio Pret, Trey Graves, David Blankenship, Stewart Robertson, Patrick Lee, John Biafore, KLA-Tencor Texas (United States)
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EUV Poster Preview Speed Talks I
Tuesday 26 February 2019
11:50 AM - 12:10 PM
Location: Convention Center, Hall 2
Session Chairs:
Kenneth A. Goldberg, Lawrence Berkeley National Lab. (United States) ;
Nelson M. Felix, IBM Corp. (United States)

Previews from Posters:
10957-50
10957-51
10957-54
10957-55
Lunch/Exhibition Break 12:10 PM - 1:40 PM
Session 6:
EUV Mask Fidelity
Tuesday 26 February 2019
1:40 PM - 3:20 PM
Location: Convention Center, Grand Ballroom 220A
Session Chairs:
Martin Burkhardt, IBM Thomas J. Watson Research Ctr. (United States) ;
Bryan S. Kasprowicz, Photronics, Inc. (United States)
Towards ultimate image placement accuracy for EUV mask writing with pattern shift process
Paper 10957-16
Author(s): Vadim Sidorkin, Stephan Zimmermann, Stefan Proske, Michael Finken, G. R. Cantrell, Markus Bender, Advanced Mask Technology Ctr. GmbH Co. KG (Germany)
Show Abstract
EUV mask challenges and requirements for ultimate single exposure interconnects
Paper 10957-17
Author(s): Ravi K. Bonam, IBM Corp. (United States); Chris Progler, Michael Green, Henry Kamberian, Mohamed Ramadan, Young Ham, Yohan Choi, Bryan Kasprowicz, Photronics, Inc. (United States); Daniel Corliss, Nelson M. Felix, Romain Lallement, Derren Dunn, IBM Corp. (United States)
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Influence of mask line width roughness on programmed pattern defect printability
Paper 10957-18
Author(s): Takeshi Yamane, Evolving Nano-process Infrastructure Development Ctr., Inc. (Japan)
Show Abstract
Impact of EUV absorber variations on wafer patterning
Paper 10957-19
Author(s): Lawrence S. Melvin, Yudhishthir Kandel, Tim Fühner, Synopsys, Inc. (United States); Ulrich Welling, Synopsys Belgium BVBA (Belgium); Emily Gallagher, Andreas Frommhold, IMEC (Belgium); Yoshitake Shusuke, NuFlare Technology, Inc. (Japan)
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Ion beam etching of advanced absorber materials for sub-5nm EUV masks
Paper 10957-20
Author(s): Narasimhan Srinivasan, Katrina Rook, Vincent Ip, Meng H. Lee, Sandeep Kohli, Frank Cerio, Adrian J. Devasahayam, Veeco Instruments Inc. (United States)
Show Abstract
Session 7:
Printing at the Edge: EUV Patterning Applications
Tuesday 26 February 2019
3:50 PM - 4:50 PM
Location: Convention Center, Grand Ballroom 220A
Session Chairs:
Christopher S. Ngai, Applied Materials, Inc. (United States) ;
Luciana Meli, IBM Corp. (United States)
Printability study of EUV double patterning for CMOS metal layers
Paper 10957-21
Author(s): Danilo De Simone, IMEC (Belgium); Arjun Singh, GLOBALFOUNDRIES Europe Ltd. (Belgium); Geert Vandenberghe, IMEC (Belgium)
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LCDU optimization of STT-MRAM 50nm pitch MTJ pillars for process window improvement
Paper 10957-22
Author(s): Murat Pak, Davide Crotti, Farrukh Yasin, Monique Ercken, Sandip Halder, Danilo De Simone, Pieter Vanelderen, Laurent Souriau, Hubert Hody, Gouri Sankar Kar, IMEC (Belgium)
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Impact of sequential infiltration synthesis (SIS) on roughness and stochastic nano-failures for EUVL patterning
Paper 10957-23
Author(s): Pieter Vanelderen, Victor Blanco, Ming Mao, IMEC (Belgium); Yoann Tomczak, David de Roest, ASM Belgium N.V. (Belgium); Nicola Kissoon, Gijsbert Rispens, Guido Schiffelers, ASML Netherlands B.V. (Netherlands); Abhinav Pathak, Frederic Lazzarino, Danilo De Simone, IMEC (Belgium); Etienne de Poortere, Moyra McManus, ASML Netherlands B.V. (Netherlands); Daniele Piumi, Gosia Jurczak, ASM Belgium N.V. (Belgium); Eric Hendrickx, Geert Vandenberghe, IMEC (Belgium)
Show Abstract
Wednesday 27 February Show All Abstracts
Session 8:
EUV Patterning and Etch: Joint session with conferences 10957 and 10963
Wednesday 27 February 2019
8:00 AM - 10:00 AM
Location: Convention Center, Grand Ballroom 220A
Session Chairs:
Rich S. Wise, Lam Research Corp. (United States) ;
Anna Lio, Intel Corp. (United States)
EUV line-space pattern defect mitigation simulation using Coventor SEMulator3D to enable exposure dose reduction
Paper 10963-17
Author(s): Daniel Sobieski, Rich Wise, Yang Pan, David Fried, Nader Shamma, Lam Research Corp. (United States)
Show Abstract
Line roughness improvements on EUV 36nm pitch pattern by plasma treatment method
Paper 10963-18
Author(s): Toshiharu Wada, Akiteru Ko, Peter Biolsi, TEL Technology Ctr., America, LLC (United States)
Show Abstract
Staggered pillar patterning using 0.33NA EUV lithography
Paper 10957-25
Author(s): Danilo De Simone, Lieve van Look, Nouredine Rassoul, Frederic Lazzarino, Pieter Vanelderen, Gian Lorusso, Nadia Vandenbroeck, Frieda van Roey, Anne-Laure Charley, Geert Vandenberghe, Kurt Ronse, IMEC (Belgium); Kilyoung Lee, Junghyung Lee, Sarohan Park, Chang-Moon Lim, SK Hynix, Inc. (Korea, Republic of)
Show Abstract
Post-lithography roughness and stochastic failures mitigation study for 32nm pitch EUV L/S (Invited Paper)
Paper 10963-19
Author(s): Frederic Lazzarino, Romuald Blanc, Ming Mao, Danilo De Simone, Nadia Vandenbroeck, Pieter Vanelderen, Victor Blanco, Philippe Foubert, Christophe Beral, Amir-Hossein Tamaddon, Alain Moussa, Anne-Laure Charley, Sandip Halder, Philippe Leray, Kurt Ronse, IMEC (Belgium)
Show Abstract
Extending EUV by isolating sources of critical dimension (CD) variation
Paper 10957-26
Author(s): Indira Seshadri, Stuart Sieg, Praveen Joseph, Steven McDermott, Romain Lallement, IBM Corp. (United States)
Show Abstract
Session 9:
EUV Masks, Defects, and Pellicles
Wednesday 27 February 2019
10:30 AM - 12:10 PM
Location: Convention Center, Grand Ballroom 220A
Session Chairs:
Emily E. Gallagher, IMEC (Belgium) ;
Moshe E. Preil, KLA-Tencor Corp. (United States)
Advanced particle contamination control in EUV scanners
Paper 10957-27
Author(s): Mark A. van de Kerkhof, Antoine Kempen, Tjarko van Empel, Christian Cloin, Andrey Nikipelov, ASML Netherlands B.V. (Netherlands)
Show Abstract
Upgrades to the SHARP EUV mask microscope
Paper 10957-28
Author(s): Markus P. Benk, Weilun Chao, Ryan H. Miyakawa, Kenneth Goldberg, Patrick Naulleau, Lawrence Berkeley National Lab. (United States)
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Amplitude and phase defect inspection on EUV reticles using RESCAN
Paper 10957-29
Author(s): Iacopo Mochi, Rajendran Rajeev, Sara Fernandez, Dimitrios Kazazis, Li-Ting Tseng, Patrick Helfenstein, Yasin Ekinci, Paul Scherrer Institut (Switzerland)
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Actinic metrology platform for defect review and mask qualification: flexibility and performance
Paper 10957-66
Author(s): Renzo Capelli, Martin Dietzel, Dirk Hellweg, Grizelda Kersteen, Conrad Wolke, Carl Zeiss SMT GmbH (Germany)
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EUV pellicle qualification on transmission and reflectance
Paper 10957-31
Author(s): Rainer Lebert, Christian Pampfer, Andreas Biermanns-Foeth, Thomas Missalla, Christoph Phiesel, Christian Piel, RI Research Instruments GmbH (Germany)
Show Abstract
Lunch/Exhibition Break 12:10 PM - 1:40 PM
Session 10:
EUV Imaging Enhancement I
Wednesday 27 February 2019
1:40 PM - 3:00 PM
Location: Convention Center, Grand Ballroom 220A
Session Chairs:
Andreas Erdmann, Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB (Germany) ;
Eric Hendrickx, IMEC (Belgium)
3D mask effects in high NA EUV imaging
Paper 10957-32
Author(s): Andreas Erdmann, Peter Evanschitzky, Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB (Germany); Gerardo Bottiglieri, Eelco van Setten, Timon Fliervoet, ASML Netherlands B.V. (Netherlands)
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Investigation of phase effects in EUV lithography (Invited Paper)
Paper 10957-33
Author(s): Martin Burkhardt, IBM Thomas J. Watson Research Ctr. (United States)
Show Abstract
Fabrication and evaluation of phase shift mask using platinum for high numerical aperture extreme ultraviolet lithography
Paper 10957-34
Author(s): Jung Sik Kim, Gon Woo Dong, Dong Min Jeong, Hanyang Univ. (Korea, Republic of); Gil Woo Kong, Min Ki Choi, Jonghwa Lee, S&S TECH (Korea, Republic of); Jinho Ahn, Hanyang Univ. (Korea, Republic of)
Show Abstract
Implementation of different cost functions for EUV mask optimization for next generation beyond 7nm
Paper 10957-35
Author(s): Fan Jiang, Mentor, a Siemens Business (United States); Vivian Wei Guo, GLOBALFOUNDRIES Inc. (United States); Alexander Tritchkov, Mentor, a Siemens Business (United States); Alex Wei, Srividya Jayaram, Mentor Graphics Corp. (United States); Scott Mansfield, Larry Zhuang, GLOBALFOUNDRIES Inc. (United States); Yuyang Sun, Xima Zhang, Mentor Graphics Corp. (United States); Todd Bailey, GLOBALFOUNDRIES Inc. (United States); James Word, Mentor Graphics Corp. (United States)
Show Abstract
EUV Poster Preview Speed Talks II
Wednesday 27 February 2019
3:00 PM - 3:20 PM
Location: Convention Center, Hall 2
Session Chairs:
Kenneth A. Goldberg, Lawrence Berkeley National Lab. (United States) ;
Nelson M. Felix, IBM Corp. (United States)

Previews from Posters:
10957-48
10957-49
10957-61
10957-56
Session 11:
EUV Imaging Enhancement II
Wednesday 27 February 2019
3:50 PM - 4:50 PM
Location: Convention Center, Grand Ballroom 220A
Session Chairs:
Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan) ;
Kurt G. Ronse, IMEC (Belgium)
Compatibility assessment of novel reticle absorber materials for use in EUV lithography systems
Paper 10957-36
Author(s): Jetske Stortelder, Arnold Storm, Veronique de Rooij-Lohmann, Chien-Ching Wu, TNO (Netherlands); Willem van Schaik, ASML Netherlands B.V. (Netherlands)
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Experimental Investigation of a high-κ reticle absorber system for EUV lithography
Paper 10957-37
Author(s): Jo Finders, Frank Timmermans, Robbert de Kruif, ASML Netherlands B.V. (Netherlands); Bríd M. Connolly, Toppan Photomasks, Inc. (Germany); Markus Bender, Advanced Mask Technology Ctr. GmbH Co. KG (Germany); Takahiro Onoue, Yohei Ikebe, Dave Farrar, HOYA Corp. (Japan)
Show Abstract
Advanced multilayer mirror design to mitigate EUV shadowing
Paper 10957-38
Author(s): Stuart Sherwin, Andrew R. Neureuther, Laura Waller, Univ. of California, Berkeley (United States); Patrick Naulleau, Lawrence Berkeley National Lab. (United States)
Show Abstract
EUV Poster Preview Speed Talks III
Wednesday 27 February 2019
4:50 PM - 5:10 PM
Location: Convention Center, Hall 2
Session Chairs:
Kenneth A. Goldberg, Lawrence Berkeley National Lab. (United States) ;
Nelson M. Felix, IBM Corp. (United States)

Previews from Posters:
10957-58
10957-59
10957-60
10957-64
Session PS1:
Posters-Wednesday
Wednesday 27 February 2019
5:30 PM - 7:30 PM
Location: Convention Center, Hall 2

Posters will be on display from 10:00 am to 5:00 pm, and again from 5:30 pm to 7:30 pm during the poster session. Come to view the high-quality papers that are presented in this alternative format, and interact with the poster authors who will be present during the poster session. Enjoy light refreshments while networking with your colleagues.

Full author or technical registration is required for entry to the poster session. Please wear your registration badge.
EUV resist hardening and laser annealing for LER improvement
Paper 10957-24
Author(s): Jennifer W. Church, IBM Thomas J. Watson Research Ctr. (United States); Yongan Xu, IBM Corp. (United States)
Show Abstract
An analysis method for the topography of phase defect in the extreme ultraviolet mask
Paper 10957-30
Author(s): Wei Cheng, Sikun Li, Xiangzhao Wang, Heng Zhang, Zejiang Meng, Shanghai Institute of Optics and Fine Mechanics (China)
Show Abstract
Actinic inband EUV reflectometry AIMER compared to ALS blank qualification and applied to structured masks
Paper 10957-47
Author(s): Rainer Lebert, Andreas Biermanns-Foeth, Christoph Phiesel, Jennifer Arps, Thomas Missalla, Christian Piel, RI Research Instruments GmbH (Germany)
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Table-top EUV/soft x-ray source for metrological applications
Paper 10957-48
Author(s): Klaus Mann, Jonathan Holburg, Simon Lange, Matthias Müller, Bernd Schäfer, Laser-Lab. Göttingen e.V. (Germany)
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High-precision MoSi multilayer coatings at high-volume for continued EUVL infrastructure development
Paper 10957-49
Author(s): Michael D. Kriese, Yang Li, Jeffery Steele, Yuriy Platonov, Rigaku Innovative Technologies, Inc. (United States)
Show Abstract
The defect mitigation on EUV stack by track based technology
Paper 10957-50
Author(s): Naoki Shibata, Lior Huli, Corey Lemley, Yuichiro Miyata, Dave Hetzer, Toshiharu Wada, Akiteru Ko, TEL Technology Ctr., America, LLC (United States); Shinichiro Kawakami, Takahiro Shiozawa, Hidetsugu Yano, Kenichi Ueda, Tokyo Electron Kyushu Ltd. (Japan); Akihiro Sonoda, Tokyo Electron Ltd. (Japan); Karen Petrillo, Luciana Meli, Nelson M. Felix, Cody Murray, Alex Hubbard, IBM Corp. (United States)
Show Abstract
EUV-LET 2.0: a compact exposure tool for industrial research at a wavelength of 13.5nm
Paper 10957-51
Author(s): Sascha Brose, Serhiy Danylyuk, Lukas Bahrenberg, RWTH Aachen Univ. (Germany); Rainer Lebert, RI Research Instruments GmbH (Germany); Jochen Stollenwerk, Peter Loosen, RWTH Aachen Univ. (Germany), Fraunhofer-Institut für Lasertechnik (Germany); Larissa Juschkin, RWTH Aachen Univ. (Germany)
Show Abstract
Photon detector calibration in the EUV spectral range at PTB
Paper 10957-52
Author(s): Christian Laubis, Frank Scholze, Ayhan Babalik, Anja Babuschkin, Annett Barboutis, Christian Buchholz, Andreas Fischer, Sina Jaroslawzew, Jana Lehnert, Heiko Mentzel, Jana Puls, Anja Schönstedt, Michael Sintschuk, Christian Stadelhoff, Claudia Tagbo, Physikalisch-Technische Bundesanstalt (Germany)
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EUV specific test keys for technology nodes below 5nm
Paper 10957-53
Author(s): Hemant Vats, Yasser Sherazi, Ryan Ryoung Han Kim, Kurt Ronse, IMEC (Belgium)
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Line-edge roughness on fin-field-effect-transistor performance for below 10nm patterns
Paper 10957-54
Author(s): Sang-Kon Kim, So-Won Yoon, Hongik Univ. (Korea, Republic of)
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Tin based hybrid non-chemically amplified resist for EUVL and its comparison with non hybrid resist
Paper 10957-55
Author(s): Guilherme K. Belmonte, Suelen W. Cendron, Univ. Federal do Rio Grande do Sul (Brazil); Pulikanti Guruprasad Reddy, Kenneth E. Gonsalves, Indian Institute of Technology Mandi (India); Daniel E. Weibel, Univ. Federal do Rio Grande do Sul (Brazil)
Show Abstract
Calibrated PSCAR stochastic simulation
Paper 10957-56
Author(s): Cong Que Dinh, Tokyo Electron Kyushu Ltd. (Japan); Seiji Nagahara, Tokyo Electron Ltd. (Japan); Gousuke Shiraishi, Yuya Kamei, Tokyo Electron Kyushu Ltd. (Japan); Michael Carcasi, Tokyo Electron America, Inc. (United States); Hiroyuki Ide, Yoshihiro Kondo, Yuichi Yoshida, Kosuke Yoshihara, Ryo Shimada, Masaru Tomono, Kazuhiro Takeshita, Tokyo Electron Kyushu Ltd. (Japan); Kathleen Nafus, Tokyo Electron America, Inc. (United States); Serge Biesemans, Tokyo Electron Europe Ltd. (Belgium); John S. Petersen, Danilo De Simone, Philippe Foubert, Peter De Bisschop, Geert Vandenberghe, IMEC (Belgium); Hans-Jurgen Stock, Balint Meliorisz, Synopsys GmbH (Germany)
Show Abstract
Novel technologies in coater/developer to enhance the CD stability and to improve the defectivity toward N7 and smaller nodes
Paper 10957-57
Author(s): Yuya Kamei, Tomoya Onitsuka, Tokyo Electron Ltd. (Belgium); Shinichiro Kawakami, Masahide Tadokoro, Yohei Sano, Masashi Enomoto, Tokyo Electron Kyushu Ltd. (Japan); Kathleen Nafus, Tokyo Electron Ltd. (Belgium); Akihiro Sonoda, Tokyo Electron Ltd. (Japan); Marc Demand, Tokyo Electron Europe Ltd. (Belgium); Philippe Foubert, IMEC (Belgium)
Show Abstract
Simulation of statistical effects in exposure and development of EUV photoresists using the percolation and diffusion limited aggregation model
Paper 10957-58
Author(s): Akira Sasaki, National Institutes for Quantum and Radiological Science and Technology (Japan)
Show Abstract
Fundamental study on dissolution kinetics of poly(4-hydroxystyrene) for development of high-resolution resists
Paper 10957-60
Author(s): Ayako Nakajima, Kyoko Watanabe, Kyoko Matsuoka, Takahiro Kozawa, Osaka Univ. (Japan); Yoshitaka Komuro, Daisuke Kawana, Akiyoshi Yamazaki, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Show Abstract
Update of the development progress of the high power LPP-EUV light source using a magnetic field
Paper 10957-61
Author(s): Atsushi Ueda, Shinji Nagai, Tatsuya Yanagida, Tsukasa Hori, Yutaka Shiraishi, Kenichi Miyao, Hideyuki Hayashi, Yukio Watanabe, Takeshi Okamoto, Tamotsu Abe, Takeshi Kodama, Hiroaki Nakarai, Takashi Saito, Hakaru Mizoguchi, Gigaphoton Inc. (Japan)
Show Abstract
Beam quality of pulsed high power CO2-lasers for EUV lithography
Paper 10957-62
Author(s): Jonathan Mueller, Johannes Kaschke, TRUMPF Lasersystems for Semiconductor Manufacturing GmbH (Germany)
Show Abstract
Computer modeling of physical processes in EUV sources for lithography
Paper 10957-63
Author(s): Slava Medvedev, Dmitry Astakhov, Ilya Popov, ISTEQ B.V. (Netherlands); Vladimir Ivanov, Konstantin Koshelev, Institute of Spectroscopy (Russian Federation); Ilya Vichev, Ilya Tsygvintsev, M. V. Keldysh Institute of Applied Mathematics of the RAS (Russian Federation)
Show Abstract
Litho-performance expansion with new SOC made from Hemicellulose
Paper 10957-64
Author(s): Masahiko Harumoto, Yuji Tanaka, Chisayo Nakayama, Yo Arisawa, Masaya Asai, Charles Pieczulewski, SCREEN Semiconductor Solutions Co Ltd (Japan); Harold Stokes, SCREEN SPE Germany GmbH (Germany); Kimiko Yamamoto, Kazuyo Morita, Yasuaki Tanaka, Oji Holdings Corporation (Japan)
Show Abstract
Interferometric measurement of etch-depth in etched phase shift masks
Paper 10957-65
Author(s): Wenhua Zhu, Ryan Miyakawa, Patrick Naulleau, Lawrence Berkeley National Lab. (United States)
Show Abstract
Achieving diffraction-limited performance on the 0.5NA Berkeley MET5 platform
Paper 10957-67
Author(s): Ryan H. Miyakawa, Christopher N. Anderson, Geoff Gaines, Jeff Gamsby, Carl Cork, Gideon Jones, Michael Dickenson, Seno Rekawa, Wenhua Zhu, Patrick Naulleau, Lawrence Berkeley National Lab. (United States)
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Investigating EUV photoelectrons with condensed phase photoemission
Paper 10957-68
Author(s): Jonathan Ma, Univ. of California, Berkeley (United States); Andrew R. Neureuther, Univ. of California, Berkeley (United States), Lawrence Berkeley National Lab. (United States); Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States)
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Thursday 28 February Show All Abstracts
Session 12:
Progress in EUV Sources
Thursday 28 February 2019
8:00 AM - 10:00 AM
Location: Convention Center, Grand Ballroom 220A
Session Chairs:
Akiyoshi Suzuki, Gigaphoton Inc. (Japan) ;
Allen H. Gabor, GLOBALFOUNDRIES Inc. (United States)
High power LPP-EUV source with long collector mirror lifetime for semiconductor high volume manufacturing
Paper 10957-39
Author(s): Hakaru Mizoguchi, Gigaphoton Inc. (Japan)
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A high brightness LPP EUV source based on continuous liquid metal target for actinic mask inspection
Paper 10957-40
Author(s): Slava Medvedev, ISTEQ B.V. (Netherlands); Konstantin Koshelev, RnD-ISAN/EUV Labs, Ltd. (Russian Federation); Alexander Vinokhodov, Oleg Yakushev, Alexey Yakushkin, EUV Labs, Ltd. (Russian Federation); Dmitry Abramenko, Institute of Spectroscopy (Russian Federation); Alexander Lash, RnD-ISAN/EUV Labs, Ltd. (Russian Federation); Mikhail Krivokorytov, Yuri Sidelnikov, Vladimir Ivanov, Vladimir Krivtsun, Institute of Spectroscopy (Russian Federation); Denis Glushkov, Pavel Seroglazov, Samir Ellwi, ISTEQ B.V. (Netherlands)
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Colliding plasmas as potential EUV sources towards higher conversion efficiency
Paper 10957-41
Author(s): Tatyana Sizyuk, John P. Oliver, Purdue Univ. (United States)
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Laser produced plasma EUV sources for HVM 7nm node lithography: progress in availability and prospects of power scaling
Paper 10957-42
Author(s): Igor V. Fomenkov, ASML US, LP (United States)
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Optimization of LPP systems performance for achieving high power EUV sources
Paper 10957-43
Author(s): Ahmed Hassanein, Tatyana Sizyuk, Purdue Univ. (United States)
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Ongoing investigation of collector cleaning by surface wave plasma in the Illinois NXE:3100 chamber
Paper 10957-44
Author(s): Gianluca A. Panici, Dren Qerimi, David N. Ruzic, Univ. of Illinois (United States)
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Session award:
Award Announcement
Thursday 28 February 2019
10:25 AM - 10:30 AM
Location: Convention Center, Grand Ballroom 220A

Presentation of the 2019 ASML-Cymer Leadership Best Student Paper Award

Award Sponsored by

Session 13:
EUV OPC and Modeling: Joint session with conferences 10957 and 10962
Thursday 28 February 2019
10:30 AM - 12:10 PM
Location: Convention Center, Grand Ballroom 220A
Session Chairs:
Kevin Lucas, Synopsys, Inc. (United States) ;
Soichi Inoue, Toshiba Corp. (Japan)
Development of fast rigorous simulators for large-area EUV lithography simulation
Paper 10957-45
Author(s): Michael Yeung, Fastlitho Inc. (United States); Eytan Barouch, Boston Univ. (United States)
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Mask 3D effect reduction and defect printability of etched multilayer EUV mask
Paper 10957-46
Author(s): Takashi Kamo, Takeshi Yamane, Yasutaka Morikawa, Susumu Iida, Takayuki Uchiyama, Shunko Magoshi, Satoshi Tanaka, Evolving Nano-process Infrastructure Development Ctr., Inc. (Japan)
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SAQP spacer merge and EUV self-aligned block decomposition at 28nm metal pitch on imec 7nm node
Paper 10962-22
Author(s): Jae Uk Lee, Syed Muhammad Yasser Sherazi, IMEC (Belgium); Soo-Han Choi, Synopsys, Inc. (United States); Ryoung-Han R. Kim, IMEC (Belgium)
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EUV computational lithography using accelerated topographic mask simulation
Paper 10962-23
Author(s): Vitaly Domnenko, Synopsys SPb, LLC (Russian Federation); Bernd Küchler, Wolfgang Hoppe, Jürgen Preuninger, Ulrich Klostermann, Wolfgang Demmerle, Martin Bohn, Dietmar Krüger, Synopsys GmbH (Germany); Ryoung-Han R. Kim, Ling Ee Tan, IMEC (Belgium)
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EUV mask synthesis with rigorous ILT for process window improvement
Paper 10962-24
Author(s): Kyle Braam, Guangming Xiao, Synopsys, Inc. (United States); Wolfgang Hoppe, Ulrich Klostermann, Synopsys GmbH (Germany); Kevin Lucas, Synopsys, Inc. (United States)
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