San Jose Convention Center
San Jose, California, United States
24 - 28 February 2019
Conference 10960
Advances in Patterning Materials and Processes XXXVI
Monday - Thursday 25 - 28 February 2019
Conference
Committee
show | hide
Conference Chair
Conference Co-Chair
Program Committee
Program Committee continued...
Monday 25 February Show All Abstracts
AL19 Plenary Session
Monday 25 February 2019
8:00 AM - 10:30 AM
Location: Convention Center, Grand Ballroom 220A

8:00 am to 8:30 am

Welcome and Announcements
Symposium Chairs: Will Conley, Cymer, An ASML Company (USA), and Kafai Lai, IBM T. J. Watson Research Ctr. (USA)

    *Introduction of New SPIE Fellows
    *Presentation of the Zernike Awards
    *Presentation of the Nick Cobb Memorial Scholarship
The Future is Quantum (Plenary Presentation)
Paper 10957-500
Author(s): Dario Gil, IBM Research (United States)
Show Abstract
3D NAND Flash Technology: Roadmap, Process, Design, and Challenges (Plenary Presentation)
Paper 10957-501
Author(s): Jeongdong Choe, Techinsights (Canada)
Show Abstract
Patterning in the Stressful World of 3D NAND (Plenary Presentation)
Paper 10957-502
Author(s): Steven E. Steen, ASML (Netherlands)
Show Abstract
Opening Remarks and Award Announcements
Monday 25 February 2019
2:00 PM - 2:20 PM
Location: Convention Center, Grand Ballroom 220C
Session Chairs:
Roel Gronheid, KLA-Tencor/ ICOS Belgium (Belgium) ;
Daniel P. Sanders, IBM Research - Almaden (United States)

Presentation of the C. Grant Willson Best Paper Award

Presentation of the Hiroshi Ito Memorial Best Student Paper Award

Awards Sponsored by



Presentation of the Jeffrey Byers Memorial Award

Award Sponsored by

Session 1:
Keynote Session
Monday 25 February 2019
2:20 PM - 3:20 PM
Location: Convention Center, Grand Ballroom 220C
Session Chairs:
Roel Gronheid, KLA-Tencor/ ICOS Belgium (Belgium) ;
Daniel P. Sanders, IBM Research - Almaden (United States)
Metal-containing resists for EUV lithography (Keynote Presentation)
Paper 10960-1
Author(s): Robert L. Brainard, SUNY Polytechnic Institute (United States)
Show Abstract
Increased regulatory scrutiny of photolithography chemistries: The need for science and innovation (Keynote Presentation)
Paper 10960-2
Author(s): Brooke Tvermoes, IBM Corp. (United States); David Speed, GLOBALFOUNDRIES Inc. (United States)
Show Abstract
Session 2:
Inorganic Resists: Joint session with conferences 10960 and 10957
Monday 25 February 2019
3:50 PM - 5:30 PM
Location: Convention Center, Grand Ballroom 220A
Session Chairs:
Robert L. Brainard, SUNY CNSE/SUNYIT (United States) ;
Jason K. Stowers, Inpria Corp. (United States)
The role of the organic shell in hybrid molecular materials
Paper 10957-7
Author(s): Sonia Castellanos Ortega, Lianjia Wu, Neha Thakur, Olivier Lugier, Advanced Research Ctr. for Nanolithography (Netherlands)
Show Abstract
Model studies on the metal salt sensitization of chemically amplified photoresists
Paper 10960-3
Author(s): Gregory M. Wallraff, Hoa D. Truong, Martha I. Sanchez, Noel Arellano, Alexander M. Friz, Wyatt Thornley, IBM Research - Almaden (United States); Oleg Kostko, Dan S. Slaughter, Lawrence Berkeley National Lab. (United States); D. Frank Ogletree, The Molecular Foundry (United States), Lawrence Berkeley National Lab. (United States)
Show Abstract
Analysis of line-and-space patterns of ZrO2 nanoparticle resist on the basis of EUV sensitization mechanism
Paper 10957-8
Author(s): Takahiro Kozawa, Teppei Yamada, Yusa Muroya, Osaka Univ. (Japan); Julius J. Santillan, Toshiro Itani, Evolving Nano-process Infrastructure Development Ctr., Inc. (Japan)
Show Abstract
Model reactivity of inorganic and organometallic materials in EUV
Paper 10960-4
Author(s): Wyatt Thornley, Hoa D. Truong, Martha I. Sanchez, Daniel P. Sanders, Gregory M. Wallraff, IBM Research - Almaden (United States); Oleg Kostko, D. Frank Ogletree, Daniel S. Slaughter, Lawrence Berkeley National Lab. (United States)
Show Abstract
Study of zinc based metal oxoclusters: towards enhanced EUV absorptivity
Paper 10957-9
Author(s): Neha Thakur, Sonia Castellanos Ortega, Advanced Research Ctr. for Nanolithography (Netherlands)
Show Abstract
Tuesday 26 February Show All Abstracts
Session 3:
Stochastics and Exposure Mechanisms: Joint session with conferences 10960 and 10957
Tuesday 26 February 2019
8:00 AM - 10:00 AM
Location: Convention Center, Grand Ballroom 220C
Session Chairs:
Florian Gstrein, Intel Corp. (United States) ;
Thomas I. Wallow, ASML San Jose (United States)
Stochastic printing failures in EUV lithography (Invited Paper)
Paper 10957-10
Author(s): Peter De Bisschop, IMEC (Belgium)
Show Abstract
Fundamentals of resist stochastics effect for single-expose EUV patterning
Paper 10957-11
Author(s): Anuja De Silva, Luciana Meli, Dario L. Goldfarb, Nelson M. Felix, IBM Corp. (United States)
Show Abstract
Then a miracle occurs: A description of the issues of EUV radiolysis process and the relationship to stochastic print failures
Paper 10960-5
Author(s): John S. Petersen, IMEC (Belgium)
Show Abstract
Measuring extreme-ultraviolet secondary electron blur
Paper 10960-6
Author(s): Steven Grzeskowiak, Robert L. Brainard, Gregory H. Denbeaux, SUNY CNSE/SUNYIT (United States)
Show Abstract
Multiscale approach for modeling EUV patterning of chemically amplified resist
Paper 10960-7
Author(s): Hyungwoo Lee, Muyoung Kim, Junghwan Moon, Sungwoo Park, Seoul National Univ. (Korea, Republic of); Byunghoon Lee, Changyoung Jeong, SAMSUNG Electronics Co., Ltd. (Korea, Republic of); Maenghyo Cho, Seoul National Univ. (Korea, Republic of)
Show Abstract
The hidden energy tail of low energy electrons in EUV lithography
Paper 10960-8
Author(s): Roberto Fallica, imec (Belgium)
Show Abstract
Session 4:
EUV Resists
Tuesday 26 February 2019
10:30 AM - 12:10 PM
Location: Convention Center, Grand Ballroom 220C
Session Chairs:
Danilo De Simone, IMEC (Belgium) ;
Anuja De Silva, IBM Corp. (United States)
PSCAR optimization to reduce EUV resist roughness with sensitization
Paper 10960-9
Author(s): Seiji Nagahara, Tokyo Electron Ltd. (Japan); Cong Que Dinh, Gosuke Shiraishi, Tokyo Electron Kyushu Ltd. (Japan); Yuya Kamei, Tokyo Electron Ltd. (Belgium); Michael A. Carcasi, Tokyo Electron America, Inc. (United States); Hiroyuki Ide, Yoshihiro Kondo, Yuichi Yoshida, Kosuke Yoshihara, Ryo Shimada, Masaru Tomono, Kazuhiro Takeshita, Tokyo Electron Kyushu Ltd. (Japan); Kathleen Nafus, Tokyo Electron America, Inc. (Belgium); Serge Biesemans, Tokyo Electron Europe Ltd. (Belgium); Hideo Nakashima, Tokyo Electron Ltd. (Japan); John S. Petersen, Danilo De Simone, Philippe Foubert, Geert Vandenberghe, IMEC (Belgium); Hans-Jürgen Stock, Balint Meliorisz, Synopsys GmbH (Germany)
Show Abstract
Advanced EUV negative tone resist and underlayer approaches exhibiting sub-20nm half-pitch resolution
Paper 10960-10
Author(s): Thomas Gädda, Juha T. Rantala, Luong Nguyen Dang, Markus Laukkanen, Kimmo Karaste, Oskari Kähkönen, Emilia Kauppi, PiBond Oy (Finland); Dimitrios Kazazis, Yasin Ekinci, Paul Scherrer Institut (Switzerland)
Show Abstract
Multi-trigger resist: novel synthesis improvements for high resolution EUV lithography
Paper 10960-11
Author(s): Greg O'Callaghan, Carmen Popescu, The Univ. of Birmingham (United Kingdom); Alex McClelland, Irresistible Materials Ltd. (United Kingdom); Dimitrios Kazazis, Paul Scherrer Institut (Switzerland); John Roth, Nano-C, Inc. (United States); Wolfgang Theis, The Univ. of Birmingham (United Kingdom); Yasin Ekinci, Paul Scherrer Institut (Switzerland); Alex P. G. Robinson, The Univ. of Birmingham (United Kingdom)
Show Abstract
Improvement of dual insolubilization resist performance through the incorporation of various functional units
Paper 10960-12
Author(s): Satoshi Enomoto, Takumi Yoshino, Kohei Machida, Toyo Gosei Co., Ltd. (Japan); Takahiro Kozawa, Osaka Univ. (Japan)
Show Abstract
New PSCAR concept promising high sensitivity resist overcoming problems of RLS trade-off, LER and stochastic defects
Paper 10960-13
Author(s): Seiichi Tagawa, Osaka Univ. (Japan)
Show Abstract
Lunch/Exhibition Break 12:10 PM - 1:40 PM
Session 5:
Resist Fundamentals
Tuesday 26 February 2019
1:40 PM - 3:20 PM
Location: Convention Center, Grand Ballroom 220C
Session Chairs:
Nobuyuki N. Matsuzawa, Panasonic Corp. (Japan) ;
Douglas J. Guerrero, Brewer Science, Inc. (Belgium)
Chemical amplification without a catalyst
Paper 10960-14
Author(s): C. Grant Willson, The Univ. of Texas at Austin (United States)
Show Abstract
Understanding photoacid generator distribution at nanoscale using massive cluster secondary ion mass spectroscopy
Paper 10960-15
Author(s): Xisen Hou, Mingqi Li, Dow Electronic Materials (United States); Michael J. Eller, Stanislav V. Verkhoturov, Emile A. Schweikert, Texas A&M Univ. (United States); Peter Trefonas, Dow Electronic Materials (United States)
Show Abstract
Nanoscale polymer property measurement using single-molecule fluorescence
Paper 10960-16
Author(s): J. Alexander Liddle, National Institute of Standards and Technology (United States); Muzhou Wang, Northwestern Univ. (United States); Stephen Stranick, Abhishek Kumar, Jeffrey W. Gilman, National Institute of Standards and Technology (United States)
Show Abstract
Roughness power spectral density as a function of aerial image and basic process/resist parameter
Paper 10960-17
Author(s): Charlotte A. Cutler, Choong Bong Lee, James W. Thackeray, John Nelson, Jason DeSisto, Mingqi Li, Emad Aqad, Xisen Hou, Tomas Marangoni, Joshua A. Kaitz, Rochelle Rena, DowDuPont Electronics & Imaging (United States); Chris A. Mack, Fractilia, LLC (United States)
Show Abstract
Pitch division photolithography at I-line
Paper 10960-18
Author(s): Paul Meyer, Ji Yeon Kim, Nathaniel A. Lynd, C. Grant Willson, The Univ. of Texas at Austin (United States)
Show Abstract
Session 6:
Integration
Tuesday 26 February 2019
3:50 PM - 5:10 PM
Location: Convention Center, Grand Ballroom 220C
Session Chairs:
Yoshio Kawai, Shin-Etsu Chemical Co., Ltd. (Japan) ;
Ryan Callahan, FUJIFILM Electronic Materials U.S.A., Inc. (United States)
Addressing challenges in the mitigation of stochastic effects
Paper 10960-19
Author(s): Hidetami Yaegashi, Arisa Hara, Tokyo Electron Ltd. (Japan)
Show Abstract
Exploration of EUV-based self-aligned multipatterning (SAMP) options targeting pitches below 20nm
Paper 10960-20
Author(s): Stefan Decoster, Frederic Lazzarino, Diziana Vangoidsenhoven, Victor M. Blanco Carballo, Els Kesters, Christophe Lorant, IMEC (Belgium)
Show Abstract
A novel methodology of litho-etch fidelity correction for logic and memory applications
Paper 10960-21
Author(s): Shr-Jia Chen, Yu-Cheng Chang, Pei-Shan Shih, Powerchip Technology Corp. (Taiwan); Arthur Lin, KLA-Tencor Corp. (Taiwan); Yi-Shiang Chang, Chia-Chi Lin, Jun-Cheng N. Lai, Powerchip Technology Corp. (Taiwan)
Show Abstract
Self-aligned fin cut last patterning scheme for fin arrays of 24nm pitch and beyond
Paper 10960-22
Author(s): Sylvain Baudot, Semiconductor Technology and Systems (Belgium); Assawer Soussou, Coventor, Inc. (France); Alexey P. Milenin, IMEC (Belgium); Joseph Ervin, Coventor, Inc. (France); Steven Demuynck, IMEC (Belgium)
Show Abstract
Wednesday 27 February Show All Abstracts
Session 7:
Monolayer Materials in Device Fabrication
Wednesday 27 February 2019
8:10 AM - 10:00 AM
Location: Convention Center, Grand Ballroom 220C
Session Chairs:
Ralph R. Dammel, EMD Performance Materials Corp. (United States) ;
James W. Thackeray, Dow Electronic Materials (United States)
Using molecular monolayers to achieve selective atomic layer deposition (Invited Paper)
Paper 10960-23
Author(s): Stacey F. Bent, Stanford Univ. (United States)
Show Abstract
Defectivity reduction in area selective atomic layer deposition by monolayer design
Paper 10960-24
Author(s): Rudy J. Wojtecki, Magi A. Mettry, Noah Frederick Fine Nathel, Alexander M. Friz, IBM Research - Almaden (United States); Anuja De Silva, IBM Corp. (United States); Noel Arellano, IBM Research - Almaden (United States); Hosadurga Shobha, IBM Corp. (United States)
Show Abstract
Selective spin-on deposition enabled by imperfect self-assembled monolayers
Paper 10960-25
Author(s): Yuanyi Zhang, Univ. of California, Santa Barbara (United States); Reika Katsumata, Univ. of Massachusetts Amherst (United States); Mark H. Somervell, Ryan L. Burns, Tokyo Electron America, Inc. (United States); Rachel A. Segalman, Craig J. Hawker, Christopher Bates, Univ. of California, Santa Barbara (United States)
Show Abstract
Ultra-thin conformal coating for spin-on doping applications
Paper 10960-26
Author(s): Mingqi Li, DowDuPont Specialty Product Div. (United States); Peter Trefonas, Bhooshan Popere, DowDuPont Electronics & Imaging (United States); Andrew T. Heitsch, Dow Chemical Co. (United States); Ratchana Limary, Lam Research Corp. (United States); Reika Katsumata, Yuanyi Zhang, Rachel A. Segalman, Univ. of California, Santa Barbara (United States)
Show Abstract
Design of selective brush chemistry and surface functionalization for directed self-assembly of block copolymers
Paper 10960-27
Author(s): Ji Yeon Kim, The Univ. of Texas at Austin (United States); Natsuko Ito, The Univ. of Texas at Austin (United States), JSR Corp. (Japan); XiaoMin Yang, Seagate Technology LLC (United States); Stephen M. Sirard, Lam Research Corp. (United States); Austin P. Lane, The Univ. of Texas at Austin (United States); Gregory Blachut, The Univ. of Texas at Austin (United States), Lam Research Corp. (United States); Yusuke Asano, The Univ. of Texas at Austin (United States), JSR Corp. (Japan); Christopher J. Ellison, Univ. of Minnesota, Twin Cities (United States); Nathaniel A. Lynd, C. Grant Willson, The Univ. of Texas at Austin (United States)
Show Abstract
Session 8:
Directed Self-assembly I: Joint session with conferences 10960 and 10958
Wednesday 27 February 2019
10:30 AM - 12:10 PM
Location: Convention Center, Grand Ballroom 220C
Session Chairs:
Raluca Tiron, CEA-LETI (France) ;
Ricardo Ruiz, HGST, Inc. (United States)
Electrical validation of the integration of 193i and DSA for metal cut patterning
Paper 10958-20
Author(s): Chi-Chun Liu, IBM Research - Albany NanoTech (United States); Richard A. Farrell, TEL Technology Ctr., America, LLC (United States); Kafai Lai, IBM Thomas J. Watson Research Ctr. (United States); Yann Mignot, IBM Research - Albany NanoTech (United States); Eric Liu, TEL Technology Ctr., America, LLC (United States); Jing Guo, IBM Research - Albany NanoTech (United States); Yasuyuki Ido, Makoto Muramatsu, Tokyo Electron Kyushu Ltd. (Japan); Nelson M. Felix, IBM Research - Albany NanoTech (United States); David R. Hetzer, Akiteru Ko, TEL Technology Ctr., America, LLC (United States); Daniel A. Corliss, IBM Research - Albany NanoTech (United States)
Show Abstract
Selective grafting of polymer brushes for directed self-assembly of high-χ block copolymers
Paper 10960-28
Author(s): Jai Hyun Koh, Ji Yeon Kim, Qingjun Zhu, The Univ. of Texas at Austin (United States); Natsuko Ito, The Univ. of Texas at Austin (United States), JSR Corp. (Japan); Ryuta Mizuochi, The Univ. of Texas at Austin (United States), Nissan Chemical Industries, Ltd. (Japan); Gregory Blachut, The Univ. of Texas at Austin (United States), Lam Research Corp. (United States); Jan Doise, IMEC (Belgium); Stephen M. Sirard, Lam Research Corp. (United States); Christopher J. Ellison, Univ. of Minnesota, Twin Cities (United States); Nathaniel A. Lynd, C. Grant Willson, The Univ. of Texas at Austin (United States)
Show Abstract
Spacer patterning lithography as a new process to induce block copolymer alignment by chemo-epitaxy
Paper 10958-21
Author(s): Anne Paquet, Ahmed GHARBI, Patricia PIMENTA-BARROS, Marie-Line POURTEAU, Aurélie LE PENNEC, CEA-LETI (France); Christophe NAVARRO, Célia NICOLET, Xavier CHEVALIER, ARKEMA GRL (France); Laurent PAIN, CEA-LETI (France); Ian CAYREFOURCQ, ARKEMA COLLOMBES (France); Paul NEALEY, Chicago university (United States); Raluca TIRON, CEA-LETI (France)
Show Abstract
LCDU improvement of EUV-patterned vias with DSA
Paper 10958-22
Author(s): Jing Guo, IBM Corp. (United States); Dustin W. Janes, SCREEN SPE USA, LLC (United States); Yann Mignot, Richard C. Johnson, Cheng Chi, Chi-Chun Liu, Luciana Meli, IBM Corp. (United States); Takuya Kuroda, Domenico A. DiPaola, SCREEN SPE USA, LLC (United States); Masahiko Harumoto, SCREEN Semiconductor Solutions Co., Ltd. (Japan); Nelson M. Felix, Daniel A. Corliss, IBM Corp. (United States)
Show Abstract
Spatial arrangement of block copolymer nanopatterns using a photoactive homopolymer substrate
Paper 10960-29
Author(s): Andrew K. Whittaker, Idriss Blakey, Zhen Jiang, The Univ. of Queensland (Australia)
Show Abstract
Lunch/Exhibition Break 12:10 PM - 1:40 PM
Session 9:
Directed Self-assembly II: Defectivity
Wednesday 27 February 2019
1:40 PM - 3:20 PM
Location: Convention Center, Grand Ballroom 220C
Session Chairs:
Mark H. Somervell, Tokyo Electron America, Inc. (United States) ;
Joy Y. Cheng, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Kinetics of defect annihilation in chemo-epitaxy directed self-assembly
Paper 10960-30
Author(s): Jiajing Li, The Univ. of Chicago (United States); Paulina A. Rincon-Delgadillo, Hyo Seon Suh, Geert Mannaert, IMEC (Belgium); Paul F. Nealey, The Univ. of Chicago (United States)
Show Abstract
Pattern defect reduction for chemo-epitaxy DSA process
Paper 10960-31
Author(s): Makoto Muramatsu, Takanori Nishi, Gen You, Yasuyuki Ido, Tokyo Electron Kyushu Ltd. (Japan); Takahiro Kitano, Tokyo Electron Ltd. (Japan)
Show Abstract
Bridge defect control with the topography of chemical pattern in directed self-assembly process
Paper 10960-32
Author(s): Hyo Seon Suh, IMEC (Belgium); Dajeong Bae, IMEC (Belgium), KAIST (Korea, Republic of); Jiajing Li, IMEC (Belgium), Univ. of Chicago (United States); Paulina A. Rincon-Delgadillo, Tae-Gon Kim, IMEC (Belgium)
Show Abstract
Defect mitigation in sub-20nm patterning with high-chi, silicon containing block copolymers
Paper 10960-33
Author(s): Jan Doise, Geert Mannaert, Hyo Seon Suh, Paulina Rincon, IMEC (Belgium); Jai Hyun Koh, Ji Yeon Kim, The Univ. of Texas at Austin (United States); Geert Vandenberghe, IMEC (Belgium); C. Grant Willson, The Univ. of Texas at Austin (United States); Christopher J. Ellison, Univ. of Minnesota, Twin Cities (United States)
Show Abstract
Accelerate the analysis and optimization of lamellar BCP process using machine learning
Paper 10960-34
Author(s): Alexandre Derville, Johann Foucher, Guilhem Bernard, Guillaume Gey, Julien Baderot, POLLEN Metrology (France); Xavier Chevalier, Ian Cayrefourcq, ARKEMA France (France)
Show Abstract
Session 10:
Student Session
Wednesday 27 February 2019
3:50 PM - 4:50 PM
Location: Convention Center, Grand Ballroom 220C
Session Chairs:
Scott W. Jessen, Texas Instruments Inc. (United States) ;
Robert D. Allen, IBM Research - Almaden (United States)
ToF-SIMS analysis of antimony carboxylate photoresists
Paper 10960-35
Author(s): Michael Murphy, Shaheen Hasan, Gregory H. Denbeaux, Robert L. Brainard, SUNY Polytechnic Institute (United States)
Show Abstract
Modeling of novel resist technologies
Paper 10960-36
Author(s): Luke Long, Andrew R. Neureuther, Univ. of California, Berkeley (United States); Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States)
Show Abstract
Imaging behavior of highly fluorinated molecular resists under extreme UV radiation
Paper 10960-37
Author(s): Hyuntaek Oh, Inha Univ. (Korea, Republic of); Seok-Heon Jung, Cornell Univ. (United States); Jeong-Seok Mun, Inha Univ. (Korea, Republic of); Kanghyun Kim, Sangsul Lee, Pohang Accelerator Lab. (Korea, Republic of); Jin-Kyun Lee, Inha Univ. (Korea, Republic of)
Show Abstract
Poster Preview Speed Talks
Wednesday 27 February 2019
4:50 PM - 5:20 PM
Location: Convention Center, Hall 2
Session Chairs:
Scott W. Jessen, Texas Instruments Inc. (United States) ;
Robert D. Allen, IBM Research - Almaden (United States)
Session PS:
Posters-Wednesday
Wednesday 27 February 2019
5:30 PM - 7:30 PM
Location: Convention Center, Hall 2

Posters will be on display from 10:00 am to 5:00 pm, and again from 5:30 pm to 7:30 pm during the poster session. Come to view the high-quality papers that are presented in this alternative format, and interact with the poster authors who will be present during the poster session. Enjoy light refreshments while networking with your colleagues.

Full author or technical registration is required for entry to the poster session. Please wear your registration badge.
Session PS1:
Poster Session: DSA
Wednesday 27 February 2019
5:30 PM - 7:30 PM
Location: Convention Center, Hall 2
Synthesis of Si-containing diblock copolymers for directed self-assembly
Paper 10960-49
Author(s): Qingjun Zhu, Jai Hyun Koh, Gregory Blachut, Austin P. Lane, The Univ. of Texas at Austin (United States); Yusuke Asano, JSR Corp. (Japan); William J. Durand, The Univ. of Texas at Austin (United States); Christopher J. Ellison, Univ. of Minnesota, Twin Cities (United States); Nathaniel A. Lynd, C. Grant Willson, The Univ. of Texas at Austin (United States)
Show Abstract
Post-polymerization modification of PS-b-PMMA for achieving directed self-assembly with sub-10nm feature size
Paper 10960-50
Author(s): Takuya Isono, Kohei Yoshida, Hokkaido Univ. (Japan); Hiroaki Mamiya, National Institute for Materials Science (Japan); Ken Miyagi, Akiyoshi Yamazaki, Tokyo Ohka Kogyo Co., Ltd. (Japan); Toshifumi Satoh, Hokkaido Univ. (Japan)
Show Abstract
PSD analysis as a tool to characterize directed self-assembly of block copolymers
Paper 10960-51
Author(s): Aurelie Le Pennec, Maxime Argoud, Patricia Pimenta-Barros, Zdenek Chalupa, CEA-LETI (France); Rémi Le Tiec, Applied Material, Inc. (Israel); Arthur Bernadac, Ahmed Gharbi, CEA-LETI (France); Xavier Chevalier, Christophe Navarro, Célia Nicolet, ARKEMA FRANCE (France); Raluca Tiron, CEA-LETI (France)
Show Abstract
Formation of microphase-separated structure with half pitch less than 10nm formed by silicon-containing high-χ diblock copolymers for nanolithographic application
Paper 10960-52
Author(s): Kazuo Aizu, Keita Watanabe, Kaori Watabe, Hitachi Chemical Co., Ltd. (Japan); Kazuhiro Hirahara, Hik Polymer Research inc. (Japan); Atsushi Takano, Yushu Matsushita, Nagoya Univ. (Japan)
Show Abstract
Microphase separation behavior study of the same system of a novel block copolymer (PS-b-PC)
Paper 10960-53
Author(s): Baolin Zhang, Guizhou Univ. (China), Institute of Microelectronics (China); Weichen Liu, Institute of Microelectronics (China), Univ. of Chinese Academy of Sciences (China); Zheng-ping Zhang, Guizhou Univ. (China); Lingkuan Meng, Integrated Circuit Materials & Components Industry Technology Innovative Alliance (ICMTIA) (China)
Show Abstract
Hemicellulose block copolymer for wide-range directed self-assembly lithography enabling high fabrication property
Paper 10960-54
Author(s): Kazuyo Morita, Kimiko Yamamoto, Oji Holdings Corp. (Japan); Masahiko Harumoto, Yuji Tanaka, Chisayo Nakayama, You Arisawa, Masaya Asai, Charles Pieczulewski, SCREEN Semiconductor Solutions Co., Ltd. (Japan)
Show Abstract
Process management of block copolymers manufacturing apparatus using residual gas analyzer
Paper 10960-55
Author(s): Ryota Matsuki, Yukio Kawaguchi, Terumasa Kosaka, Ryosuke Ogaki, HORIBA STEC, Co., Ltd. (Japan)
Show Abstract
Phase behavior of polymer blend materials for polystyrene-b-polycarbonate (PS-b-PC) block copolymers and corresponding homopolymer polystyrene
Paper 10960-56
Author(s): Weichen Liu, Institute of Microelectronics (China), Univ. of Chinese Academy of Sciences (China); Baolin Zhang, Institute of Microelectronics (China), Guizhou Univ. (China); Libin Zhang, Xiaobin He, Yayi Wei, Institute of Microelectronics (China); Xin Wu, Junyan Dai, Ruicheng Ran, Guoping Mao, Jiangsu HanTop Photo-Materials Co., Ltd. (China)
Show Abstract
Pillars fabrication by DSA for SET application: self-assembly kinetics and etching optimization
Paper 10960-57
Author(s): Ahmed Gharbi, Gabriel Reynaud, Patricia Pimenta-Barros, Khatia Benotmane, CEA-LETI (France); Christophe Navarro, Celia Nicolet, Arkema S.A. (France); Johannes von Borany, Helmholtz-Zentrum Dresden-Rossendorf e. V. (Germany); Karl-Heinz Heinig, Helmholtz-Zentrum Dresden-Rossendorf e.V. (Germany); Hans-Juergen Engelmann, Helmholtz-Zentrum Dresden-Rossendorf e. V. (Germany); Michele Perego, MDM-CNR (Italy); Francesc Perez-Murano, Consejo Superior de Investigaciones Científicas (Spain); Masahiko Harumoto, SCREEN Semiconductor Solutions Co., Ltd. (Japan); Raluca Tiron, CEA-LETI (France)
Show Abstract
Session PS2:
Poster Session: EUV
Wednesday 27 February 2019
5:30 PM - 7:30 PM
Location: Convention Center, Hall 2
Defect conscious approaches in EUV patterning
Paper 10960-58
Author(s): Arisa Hara, Tokyo Electron Kyushu Ltd. (Japan); Hidetami Yaegashi, Tokyo Electron Ltd. (Japan)
Show Abstract
On-chip characterization of n-butylSnOOH clusters for nanopatterning
Paper 10960-59
Author(s): Nizan Kenane, Douglas A. Keszler, Oregon State Univ. (United States)
Show Abstract
Robustness of interactive pattern fidelity error as a quality metric for integrated patterning
Paper 10960-60
Author(s): Soichiro Okada, Shinji Kobayashi, Satoru Shimura, Masashi Enomoto, Tokyo Electron Kyushu Ltd. (Japan); Shota Yoshimura, Kiyohito Ito, Shinya Morikita, Tokyo Electron Miyagi Ltd. (Japan)
Show Abstract
Molecular organometallic resists for EUV (MORE): polymerization photomechanism
Paper 10960-61
Author(s): Shaheen Hasan, Michael Murphy, Robert L. Brainard, SUNY Polytechnic Institute (United States)
Show Abstract
Novel zinc-based nanoparticle EUV photoresists
Paper 10960-62
Author(s): Kou Yang, Hong Xu, Kazunori Sakai, Vasiliki Kosma, Emmanuel P. Giannelis, Christopher K. Ober, Cornell Univ. (United States)
Show Abstract
Non-ionic photo-acid generators (PAGs) for EUV lithography
Paper 10960-64
Author(s): Rudy Wojtecki, Ratnam Sooriyakumaran, Hoa D. Truong, Daniel Sanders, IBM Research - Almaden (United States)
Show Abstract
Active brushes for combatting underlayer photoacid depletion
Paper 10960-65
Author(s): Alexander Hess, Rudy Wojtecki, IBM Research - Almaden (United States); Anuja De Silva, Luciana Meli, Jing Guo, Nelson M. Felix, IBM Corp. (United States); Dario L. Goldfarb, Bharat Kumar, IBM Thomas J. Watson Research Ctr. (United States); Hoa D. Truong, IBM Research - Almaden (United States)
Show Abstract
Session PS3:
Poster Session: Filtration
Wednesday 27 February 2019
5:30 PM - 7:30 PM
Location: Convention Center, Hall 2
An exploration of the use of fluoropolymers in photofiltration
Paper 10960-66
Author(s): Aiwen Wu, Annie Xia, Entegris, Inc. (United States)
Show Abstract
Bridging the defect gap in EUV photoresist
Paper 10960-67
Author(s): Tetsu Kohyama, Nihon Entegris K.K. (Japan); Alketa Gjoka, Jad Jaber, Entegris, Inc. (United States); Fumiya Kaneko, Nihon Entegris K.K. (Japan)
Show Abstract
Bulk chemical filters selection and process screening for complex bottom anti-reflective coatings (BARC) formulations
Paper 10960-68
Author(s): Rahman Almusafir, Brewer Science, Inc. (United States); Mona Bavarian, Pall Corp. (United States); Brandon Abeln, Brewer Science, Inc. (United States); Rao Varanasi, Pall Corp. (United States); Tim Limmer, Steve Rivers, Brewer Science, Inc. (United States); Michael Mesawich, Glenn Dado, Pall Corp. (United States); Nick L. Brakensiek, Levi Gildehaus, Brewer Science, Inc. (United States)
Show Abstract
Filter technology developments to address defectivity in leading-edge photoresists
Paper 10960-69
Author(s): Tetsu Kohyama, Fumiya Kaneko, Kozue Miura, Nihon Entegris K.K. (Japan); Alketa Gjoka, Jad Jaber, Entegris, Inc. (United States)
Show Abstract
A new tailored point-of-use filter to reduce immersion lithography downtime and defects
Paper 10960-70
Author(s): Aiwen Wu, Annie Xia, Entegris, Inc. (United States); Hareen Bayana, Entegris GmbH (Germany)
Show Abstract
Session PS4:
Poster Session: Fundamentals
Wednesday 27 February 2019
5:30 PM - 7:30 PM
Location: Convention Center, Hall 2
Patterning of storage stable polyphthalaldehyde copolymer films
Paper 10960-71
Author(s): Chola Bhargava Dandamudi, The Univ. of Texas at Austin (United States); Anthony Engler, Georgia Institute of Technology (United States); Nathaniel A. Lynd, The Univ. of Texas at Austin (United States); Paul A. Kohl, Georgia Institute of Technology (United States); C. Grant Willson, The Univ. of Texas at Austin (United States)
Show Abstract
Copolymer solubility for 193nm photoresists: Fundamental studies for solution stability and defect reduction
Paper 10960-72
Author(s): Michael Landry, Stefan J. Caporale, DowDuPont Specialty Products Div. (United States)
Show Abstract
Study on outgas from ArF chemically amplified resist in ArF (193nm) exposure
Paper 10960-73
Author(s): Atsushi Sekiguchi, Litho Tech Japan Co., Ltd. (Japan)
Show Abstract
Contact hole shrink of 193nm NTD immersion resist
Paper 10960-74
Author(s): Joshua Kaitz, Janet Wu, Vipul Jain, Iou-Sheng Ke, Amy Kwok, Mingqi Li, Jin Wuk Sung, Jong Keun Park, Cong Liu, Dupont Electronics and Imaging (United States)
Show Abstract
Session PS5:
Poster Session: Underlayer
Wednesday 27 February 2019
5:30 PM - 7:30 PM
Location: Convention Center, Hall 2
Polymer-based spin-on dopants
Paper 10960-75
Author(s): Bhooshan Popere, DowDuPont Specialty Products Div. (United States)
Show Abstract
Development of new maleimides applied to spin-on carbon hardmask with characteristics of high heat resistance and good planarization
Paper 10960-76
Author(s): Junya Horiuchi, Takashi Makinoshima, Takashi Sato, Yasushi Miki, Masatoshi Echigo, Mitsubishi Gas Chemical Co., Inc. (Japan)
Show Abstract
New silicon hard mask material development for sub-5nm node
Paper 10960-77
Author(s): Tomoaki Seko, Tatsuya Kasai, Ryuuichi Serizawa, JSR Corp. (Japan); Satoshi Dei, JSR Micro N.V. (Belgium); Tatsuya Sakai, JSR Corp. (Japan)
Show Abstract
Application of downstream plasma generated radical methylation treatment to passive amorphous Si surface from TMAH etching during lithography process
Paper 10960-78
Author(s): Haochen Li, Xinliang Lu, Ting Xie, Qi Zhang, Hua Chung, Shawming Ma, MIchael Yang, Mattson Technology, Inc. (United States)
Show Abstract
Charge dissipation by use of a novel aqueous based quaternary ammonium compound for use in electron beam lithography on non-conductive substrates
Paper 10960-79
Author(s): Gerald Lopez, Glen de Villafranca, Grant Shao, Meiyue Zhang, Univ. of Pennsylvania (United States); Andrew Thompson, DisChem, Inc. (United States)
Show Abstract
Thursday 28 February Show All Abstracts
Session 11:
Material Supplier
Thursday 28 February 2019
8:00 AM - 10:00 AM
Location: Convention Center, Grand Ballroom 220C
Session Chairs:
Christoph K. Hohle, Fraunhofer-Institut für Photonische Mikrosysteme (Germany) ;
Gilles R. Amblard, SAMSUNG Austin Semiconductor LLC (United States)
Evolution of lithographic materials enabling the semiconductor industry
Paper 10960-38
Author(s): James W. Thackeray, Chengbai Xu, James F. Cameron, Dow Electronic Materials (United States)
Show Abstract
Aqueous materials for advanced lithography
Paper 10960-39
Author(s): Yi Cao, EMD Performance Materials Corp. (United States); Tatsuro Nagahara, Taku Hirayama, Merck Performance Materials, Ltd. (Japan)
Show Abstract
Development of metal organic cluster EUV photoresists
Paper 10960-40
Author(s): Kazunori Sakai, JSR Corp. (Japan), Cornell Univ. (United States)
Show Abstract
Advances in metal oxide resist performance and production
Paper 10960-41
Author(s): Jason K. Stowers, Peter de Schepper, Michael Kocsis, Andrew Grenville, Inpria Corp. (United States)
Show Abstract
Expanding the lithographer’s toolkit to reduce variability: Filtration considerations
Paper 10960-42
Author(s): Jennifer Braggin, Vinay Goel, Entegris, Inc. (United States); Aiwen Wu, Entegris (United States)
Show Abstract
Start-up performance and pattern defectivity improvement using 2nm rated nylon filter developed with lithography filtration expertise
Paper 10960-43
Author(s): Toru Umeda, Nihon Pall Ltd. (Japan); Eric Shiu, Pall Corp. (United States); Takehito Mizuno, Hisashi Nakagawa, Tetsuya Murakami, Shuichi Tsuzuki, Nihon Pall Ltd. (Japan)
Show Abstract
Session 12:
Underlayers
Thursday 28 February 2019
10:30 AM - 12:10 PM
Location: Convention Center, Grand Ballroom 220C
Session Chairs:
Ryusuke Uchida, Tokyo Ohka Kogyo America, Inc. (United States) ;
Ramakrishnan Ayothi, JSR Micro, Inc. (United States)
High temperature spin on carbon materials with excellent planarization and CVD compatibility
Paper 10960-44
Author(s): Keren Zhang, Li Cui, Shintaro Yamada, James F. Cameron, Sabrina Wong, Lawrence Chen, Suzanne M. Coley, Dan Greene, Joshua A. Kaitz, Iou-Sheng Ke, DowDuPont Electronics & Imaging (United States)
Show Abstract
Improved hemicellulose spin on carbon hardmask
Paper 10960-45
Author(s): Kazuyo Morita, Kimiko Yamamoto, Hiroki Tanaka, Yasuaki Tanaka, Oji Holdings Corp. (Japan); Masahiko Harumoto, Yuji Tanaka, Chisayo Nakayama, You Arisawa, Masaya Asai, SCREEN Semiconductor Solutions Co., Ltd. (Japan); Harold W. Stokes, SCREEN SPE Germany GmbH (Germany); Charles Pieczulewski, SCREEN Semiconductor Solutions Co., Ltd. (Japan)
Show Abstract
Towards pure carbon: ultra-high carbon fullerene based spin-on organic hardmasks
Paper 10960-46
Author(s): Alan G. Brown, Irresistible Materials Ltd. (United Kingdom); Guy Dawson, The Univ. of Birmingham (United Kingdom); Alex L. McClelland, Irresistible Materials Ltd. (United Kingdom); James Bowen, The Open Univ. (United Kingdom); Tom Lada, Nano-C, Inc. (United States); Warren Montgomery, Irresistible Materials Ltd. (United Kingdom); Alex P. G. Robinson, The Univ. of Birmingham (United Kingdom)
Show Abstract
Design of under layer materials to enhance the performance for EUV lithography
Paper 10960-47
Author(s): Ryuta Mizuochi, Yasunobu Someya, Mamoru Tamura, Hiroyuki Wakayama, Sho Shimizu, Rikimaru Sakamoto, Nissan Chemical Corp. (Japan)
Show Abstract
Development of novel thick spin-on carbon hardmask
Paper 10960-48
Author(s): Byeri Yoon, Seungwook Shin, Youngmin Kim, Yumi Heo, Soyeon Park, Sungho Choi, Sanghak Lim, SAMSUNG SDI Co., Ltd. (Korea, Republic of)
Show Abstract
Lunch Break 12:10 PM - 1:40 PM
Tribute to C. Grant Willson (retiring in 2019)
Thursday 28 February 2019
1:40 PM - 5:00 PM
Location: Convention Center, Grand Ballroom 220C
Session Chairs:
Qinghuang Lin, ASML US, Inc. (United States) ;
Roel Gronheid, KLA-Tencor/ ICOS Belgium (Belgium)

In the late 1970s and early 1980s, researchers in the semiconductor industry realized that the then mainstream DNQ/Novolac photoresist platforms would not be extendible to shorter wavelength lithographies that were under development at that time. Materials with higher transparency at low wavelength and higher photospeed were required.

Dr. C. Grant Willson, in collaboration with Professor Jean Fréchet and the late Dr. Hiroshi Ito at the IBM San Jose Research Lab, invented a radically new form of photoresist used to print integrated circuits. This new class of photoresists, called chemically amplified photoresists, would become the workhorse for the entire semiconductor industry to print ever smaller, faster, cheaper and more powerful microchips. The chemically amplified resists have been the cornerstone for 248 and 193 nm lithography and today are still being researched for introduction into EUV lithography. These materials have therefore enabled modern microchips and fundamentally changed how we work, learn, communicate, interact and do business.

In 1993, Dr. Willson moved to the Univ. of Texas at Austin as a professor and he, together with his students, continued to make monumental contributions to patterning materials. This special session is organized on the occasion of his planned retirement in 2019 to celebrate his illustrious career and the many seminal contributions he has made to the semiconductor industry and our community. We invite all SPIE participants to attend this Special Session and join us in this special event. Presenters in this session will highlight Professor Willson’s career and accomplishments. They include, collaborators, colleagues, and former students:

In alphabetical order:
Bob Allen (IBM Almaden)
Yan Borodovsky (retired from Intel)
Ralph Dammel (EMD)
Chris Ellison (Univ. of Minnesota)
Cliff Henderson (Univ. of South Florida)
Chris Mack (Fractilia)
Dave Medeiros (Globalfoundries)
Doug Resnick (Canon)
Mark Somervell (Tokyo Electron)
Back to Top