Modeling the effects of acid amplifiers on photoresist stochastics
The tradeo between Resolution, Line Edge Roughness (LER) and Sensitivity, the so called RLS tradeo,
continues to be a dicult challenge, especially for EUV lithography. Acid ampliers have recently been proposed
as a method to improve upon the overall RLS performance of EUV resists. Here we discuss a simulation approach
to study the issue. The model extends the standard reaction diusion equation to explicitly capture the stochastic
behavior of exposure, photo-acid generation and acid amplication. Using this model the impact acid ampliers
have on the RLS tradeo is studied under a variety of resist conditions.
This paper was published in SPIE Proceedings Vol. 8322