Effect of Te inclusions on internal electric field of CdMnTe gamma-ray detector
Paper Abstract
We studied two separate as-grown CdMnTe crystals by Infrared (IR) microscopy
and Pockels effect imaging, and then developed an algorithm to analyze and
visualize the electric field within the crystals' bulk. In one of the two crystals the
size and distribution of inclusions within the bulk promised to be more favorable in
terms of efficiency as a detector crystal. However, the Te inclusions were arranged
in characteristic 'planes'. Pockels imaging revealed an accumulation of charges in
the region of these planes. We demonstrated that the planes induced stress within
the bulk of the crystal that accumulated charges, thereby causing non-uniformity of
the internal electric field and degrading the detector's performance.
This paper was published in SPIE Proceedings Vol. 7449
