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The SEMATECH Berkeley microfield exposure tool: learning at the 22-nm node and beyond (Proceedings Paper)

Author(s): Patrick P. Naulleau; Christopher N. Anderson; Lorie-Mae Baclea-an; Paul Denham; Simi George; Kenneth A. Goldberg; Michael Goldstein; Brian Hoef; Russ Hudyma; Gideon Jones; Chawon Koh; Bruno La Fontaine; Brittany McClinton; Ryan H. Miyakawa; Warren Montgomery; John Roller; Thomas Wallow; Stefan Wurm
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Alternative Lithographic Technologies, Frank M. Schellenberg; Bruno M. La Fontaine, Editors, 72710W

Date: 17 March 2009

Paper Abstract

Microfield exposure tools (METs) continue to play a dominant role in the development of extreme ultraviolet (EUV) resists. One of these tools is the SEMATECH Berkeley 0.3-NA MET operating as a SEMATECH resist and mask test center. Here we present an update summarizing the latest resist test and characterization results. The relatively small numerical aperture and limited illumination settings expected from 1st generation EUV production tools make resist resolution a critical issue even at the 32-nm node
DOI: 10.1117/12.814232
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