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Resolution, LER, and sensitivity limitations of photoresists (Proceedings Paper)

Author(s): Gregg M. Gallatin; Patrick Naulleau; Dimitra Niakoula; Robert Brainard; Elsayed Hassanein; Richard Matyi; Jim Thackeray; Kathleen Spear; Kim Dean
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Emerging Lithographic Technologies XII, Frank M. Schellenberg, Editors, 69211E

Date: 21 March 2008

Paper Abstract

Recent experimental results and modeling both indicate that whereas it is possible to optimize a photoresist and process to achieve separately a desired resolution or line edge roughness or sensitivity, it will be difficult if not impossible to achieve all three simultaneously using current standard chemically amplified photoresists and processes. This tradeoff among Resolution, Line Edge Roughness (LER) and Sensitivity is termed the RLS tradeoff. Here we review the progress to date of a SEMATECH-funded
DOI: 10.1117/12.772763
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