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A novel assist feature for contact holes to overcome problematic pitches (Proceedings Paper)

Author(s): Mars Yang; Francis Lin; Elvis Yang; T. H. Yang; K. C. Chen; Joseph Ku; C. Y. Lu
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Optical Microlithography XVIII, Bruce W. Smith, Editors, pp.1437-1448

Date: 12 May 2004

Paper Abstract

Resolution and through-pitch common process window are two key factors to tackle for successful small contact process manufacturing. The off-axis illumination (OAI) in combination with assist feature and attenuated phase-shift mask (APSM) is the most common used solution. However, it is still difficult to avoid problematic pitches and get a sufficient through-pitch common process window for practical use unless forbidding the problematic pitches by design rule. A novel perpendicular assist feature (PAF) is
DOI: 10.1117/12.600244
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