Dual antireflection layers for ARC/hard-mask applications (Proceedings Paper)

As the semiconductor feature size continues to shrink, the high NA lithography has become a reality. Coupling with high NA lithography, both the critical dimension control and the insufficient resist thickness for etch mask are becoming major challenges for lithographers. Hence two things are highly desired, one is an effective anti-reflective coating (ARC) strategy to maintain low reflectance for good critical dimension (CD) uniformity (CDU) control, and the other is combined ARC and hard-mask concept to s

DOI: 10.1117/12.656093
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