Hamamatsu Photonics introduces two new silicon photodiodes, optimized for the direct detection of electrons in Scanning Electron Microscopes (SEMs).
These new photodiodes are available in to formats; the S11141, a 10mm x 10mm single element photodiode and the S11142 a 14mm x 14mm quadrant type. The S11142 quadrant type allows detection of the reflected electron beam position (angle). Both types have 2mm diameter centre hole, to allow the main electron beam to pass through the sensor.
The S11141 and S11142 are designed to detect electrons with energies from just 2 keV up to > 30 keV. At 5 keV, these new diodes feature a market leading gain of 1100. The devices have been specifically optimized for back scatter measurements inside scanning electron microscopes (SEMs), with the packaging and metal contacts designed to be non-magnetic, so the photodiodes have no external influence on electron beam trajectories inside the instrument.
The excellent stability and reliability of the S11141 and S11142 make them ideal for all electron detection applications, whether for use inside OEM instrumentation or for research applications. Both models feature market leading characteristics at low energies.