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Micro/Nano Lithography

Highly linear photodiodes for RF-over-fiber

Discovery Semiconductors

Discovery Semiconductors, Inc. has introduced its Highly Linear Photodiodes DSC100S for RF-over-Fiber applications covering a frequency range of DC - 6 GHz. These photodiodes have a nominal third-order output intercept point (OIP3) of >45 dBm and second order output intercept point (OIP2) of >55 dBm for DC photocurrents in excess of 30 mA. The development effort for these photodiodes was partially funded by the Defense Advanced Research Projects Agency (DARPA). These photodiodes can work at both 1310 nm as well as 1550 nm wavelengths.

Mr. Abhay Joshi, President & CEO of Discovery Semiconductors, Inc. commented, "These devices besides higher linearity will provide better gain, noise figure, as well as dynamic range for the intensity & frequency modulated analog photonics links, both directly modulated as well as externally modulated. They will mainly serve various commercial RF-over-Fiber market segments that improve wireless coverage in "dead zones" such as city subways, mines, tunnels, interiors & basements of the buildings, to name a few." Some of the intended usage will be for fiber distribution of signals such as GPS, GSM, CDMA, WiMax, and the new LTE.

Dr. Ron Esman, the MTO Program Manager at DARPA, added, "High linearity photodiode technology is important for a myriad of defense applications including antenna remoting, opto-electronic microwave oscillators, filters and channelizers, and other aperture interface functions."