San Jose Convention Center
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    24 - 29 February 2008
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    Onsite News - Tuesday 26 February 2008

    On this page:

    Video interviews of Neal Carney and Tracy Weed
    Women in Optics Leaders Urge Involvement
    Future Projection Lithography: Optical or EUV? video interview: Neal Carney, Vice President of Marketing startup Tela Innovations video interview: Tracy Weed, Director, Product Marketing, Synopsis, Inc.

    Women in Optics Leaders Urge Involvement
    Get involved in organizing conference programs, SPIE Advanced Lithography Symposium Chair Roxann Engelstad advised those attending the Women In Optics (WiO) luncheon Tuesday in San Jose.

    More than 20 women engineers and scientists from companies such as Intel, Hitachi, Corning, Nikon, and IMB attended the luncheon, along with a student who drew applause when she said that she is "looking forward to working with the talented women in the room.”

    Engelstad outlined SPIE’s Women In Optics program, including upcoming and recent events, and presented new WiO posters and 2008 monthly planners featuring interviews with women in leading positions in optics and photonics industry, government, and academia,

    Through the WiO network, SPIE promotes personal and professional growth for women by providing community-building and networking opportunities, and encouraging young women to choose optics as a career.

    To become more involved in conference organization, start with the program committee, learn about the process, and move up to conference and symposium chair, Engelstad advised. While it is a significant commitment of time, it also is “a worthwhile and important role," she said.

    Engelstad and Elizabeth Dobisz, both of whom are SPIE Fellows, were thanked by SPIE and other luncheon attendees for their work in SPIE events and support of the WiO network.

    Get information on SPIE Women in Optics

    Future Projection Lithography: Optical or EUV?
    Only in an evening SPIE Advanced Lithography panel can you find Bob Dylan, Yogi Berra, and the political platforms of lithographic technologies.

    Nigel Farrar of Cymer and Bruno LaFontaine of AMD moderated Tuesday night's panel discussion, which opened with guest speaker Christopher "Kit" Ausschnitt's (IBM) recitation of Dylan's "Blowin' in the Wind," modified to reflect current thought about possible futures of projection lithography.

    Ben Eynon of SEMATECH followed with a look at the major "political party platforms" currently predicting how projection lithography will progress: the Conservative viewpoint of productivity, cost effectiveness, and repeatability; the Liberal platform of EUV; and the Independent viewpoint of nanoimprint. "Before you vote," he cautioned, "be sure to look at the full infrastructure and do a very careful analysis."

    Timothy Brunner of IBM then displayed a resolution vs. pixel throughput graph to explain the complexities of what must occur for projection lithography to keep marching down the path it's accustomed to.

    "It's hard to make predictions, especially about the future," was the first Yogism invoked by Will Conley (Freescale) to express the difficulty of the task at hand. He looked at previous predictions, lithography beyond 32 nm, the evolution of device patterns, and explored the poignant question, "What if 1.35 NA is the last affordable exposure tool?"

    Toshiba's lithography strategy was presented by Tatsuhiko Higashiki. After extending ArF immersion through double patterning, the strategy includes EUVL, maskless lithography, and nanoimprint. Higashiki made a case for using EUVL below 2X nm based on the prediction that EUVL costs will eventually decline to overtake double patterning as the less expensive technology.

    Both Kevin Cummings and Winfried Kaiser represented ASML, who made the exciting announcement of full-field exposures at the conference this week. Cummings gave an overview of the past year's advances and showed that neither double patterning nor 1.7 NA will get one to the 22nm node. Without major innovation, he said, only EUV is capable of delivering 22 nm SRAM, so that is the approach ASML is choosing to take, with the target of 100 wafers per hour. With full-field systems, resist improvements, and the beginning research on defects, he said his roadmap goes down to 11 nm!

    Kaiser then followed with a clarification that EUV is also "optical" and that EUV will follow the classical optical path of high NA and k1 reduction. For EUVL to be successful, he expressed a number of requirements: that the source be a strong plasma with some 100W to achieve the 100 wafer/hr target; that resist sensitivities go to 10 mJ/cm2; and that resist blur be decreased to 5 nm.

    Kurt Ronse of IMEC reminded the panelists and attendees that over the past few years, crazy ideas have been realized. Double patterning and immersion were only fantasies not too long ago, and now even resist freezing is coming close to being realized. However, for EUVL to behave as high k1, i-line lithography behaved, mask and resist infrastructure must come into place.

    This was a sentiment shared by Tony Yen of Taiwan Semiconductor. He said he was very encouraged by the ASML announcement, but the stakes are high (and the potential returns are great) for EUVL. However, he warned that we must get there before 2012, so we need to hurry up and get to work!

    The Synopsys booth on the Exhibition floor,
    featuring virtual reality driving

    See Wednesday Onsite News