tel: 310 825 9786
E-mail:
huffaker@ee.ucla.edu
Area of Expertise
Directed and self-assembled nanostructure, solid-state epitaxy, and optoelectronic devices.
Biography
Professor Diana Huffaker is an Associate Professor of Electrical Engineering at the California NanoSystems Institute. Her research interests include directed and self-assembled nanostructure, solid-state epitaxy, optoelectronic devices including solar cells and III-V/Si photonics. Professor Huffaker has co-authored over 120 refereed journal publications and over 140 presentations world-wide. Her research accomplishments include demonstrations and development in oxide-confined VCSEL, 1.3 m quantum dot lasers and monolithic III-V diodes on Si. She has been awarded the 2002 Compound Semiconductor International Symposium Young Scientist Award and the 2004 Alexander von Humboldt research fellowship. She is the director and principle investigator of the new NSF/National Cancer Institute fellowship program on Nanoscience and Microsystems at UNM. She is an active participant in the technical community with appointments in IEEE/LEOS, SPIE, WISE, MRS, OSA and TMS. She is an elected member of the IEEE/LEOS Board of Governors and IEEE WIE Region 6 chairman.
Lecture Title(s)
Monolithic and Bufferless III-Sb Photonics on Si for Photonic Intra-chip Communication and UltraDense 3-D Chips
In our presentation, we will describe specifics of our growth mode, resulting epitaxial material and interface characterization. We will also discuss recent developments in gain measurement, selective area epitaxy, antiphase domains and diode analysis. Our goal in workshop participation is to provide information about monolithic epitaxial solutions and gain better understanding of architectural constraints and systems requirements.
Controlled Crystal Structure in Patterned InAs Quantum Dot Formation by Selective Area MOCVD
We demonstrate the capability to control patterned quantum dot formation through adjusting the growth parameters inside the MOCVD reactor. Effects of altered crystallographic structure are measured using photoluminescence and SEM images.
