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Journal of Micro/Nanolithography, MEMS, and MOEMS Special Section Calls for Papers

To submit a manscript for consideration in a Special Section, please prepare the manuscript according to the journal guidelines and use the Online Submission SystemLeaving site. A cover letter indicating that the submission is intended for this special section should be included with the paper. Papers will be peer‐reviewed in accordance with the journal's established policies and procedures. Authors have the choice to publish with open access.

View the list of special sections that have already been published on the SPIE Digital Library.

EUV Lithography for the 3-nm Node and Beyond

Guest Editors:

Vivek Bakshi
EUV Litho, Inc.
10202 Wommack Road
Austin, Texas 78748
E-mail: vivek.bakshi@euvlitho.com

EUV Sources:
Hakaru Mizoguchi
400 Yokokura-shinden
Oyama, Tochigi, Japan
E-mail: hakaru_mizoguchi@gigaphoton.com

EUV Mask and Pellicles:
Ted Liang
Intel Corporation
SC2-12, 3065 Bowers Avenue
Santa Clara, California 95054
E-mail: ted.liang@intel.com

EUV Resists:
Andrew Grenville
2001 NW Monroe Avenue
Corvallis, Oregon 97330
E-mail: agrenville@inpria.com

Patterning, Metrology, and Scanner:
Jos Benschop
De Run 6501, 5504 DR Veldhoven
The Netherlands
E-mail: jos.benschop@asml.com

Call for Papers: EUV lithography (EUVL) is a leading candidate for next-generation-lithography technologies for high-volume manufacturing (HVM) of semiconductor devices. Multiple IC makers are pursuing insertion of EUV at the 5-nm node. To extend EUV to the 3-nm node and beyond, several challenges need to be addressed. We invite technical papers assessing these challenges and proposing solutions. Both theoretical and experimental papers are welcome in the following areas:

EUV Litho Systems (Guest Editor: Jos Benschop)
To enable single exposure at the 3-nm node (and potentially the 2-nm node), a high numerical aperture (NA>0.5) will be required. Stringent imaging, overlay, focus, and productivity will have to be met. We invite papers on following topics:

  • High-NA microexposure tools
  • Anamorphic NA>0.5 optics
  • High-NA scanners
  • High-NA computational lithography, including source-mask optimization and mask 3D effects.

EUV Sources (Guest Editor: Hakaru Mizoguchi)
As we continue to extend EUVL to smaller nodes, increased source power will be required. In addition, we need to continue to better understand the fundamentals of sources in order to increase their efficiency, and find ways to increase uptime. In order to enable HVM-ready, 500W+ sources, we invite papers on following topics:

  • Extension of plasma-based sources to 500W+ levels
  • Higher conversion efficiency (CE) operation opportunity of plasma-based sources
  • Free electron laser (FEL) as next-generation EUVL sources - challenges and timelines for commercial viability
  • Shorter EUV wavelength lithography and sources - potential and challenges.

EUV Mask and Pellicles (Guest Editor: Ted Liang)
To enable the implementation of EUV lithography for patterning at the 3-nm node and beyond with high imaging resolution and high photon power, innovation and development are needed in multiple areas of mask materials, fabrication, infrastructure, protection, and lifetime. The requirements for the mask and pellicle will need to be consistent with the targeted patterning performance of the ASML high-NA scanners. We invite papers on the following topics:

  • Mask materials: multilayer (ML) defects requirements; substrate and ML blank defect inspection and reduction; thermal effect under high power; absorber material to meet high NA-imaging requirements
  • Mask modeling: fast and accurate modeling of 3D effects
  • Pattern synthesis and optical proximity correction (OPC): OPC with anamorphic imaging, magnification, and mask error enhancement factor (MEEF) difference in two directions
  • Pattern generation and transfer: resolution, pattern fidelity, critical dimension (CD) and registration control, phase control for phase shift masks (PSMs)
  • Mask inspection and metrology: pattern defects, contaminations, pattern metrology
  • Mask defect disposition: defect printability based on aerial image and resist print, defect review, defect repair
  • Pellicles: requirements, materials, mounting, lifetime under high-EUV power, recovery and reuse
  • Mask handling and maintenance, such as lifetime in continuous exposure under high dose.

EUV Resists (Guest Editor: Andrew Grenville)
To realize the full potential of EUV lithography as it is extended to the 3-nm node, resist materials must be capable of efficiently transforming the aerial image delivered by the exposure tool into an etch mask for subsequent transfer into the device layer through one or more process steps. Resists must deliver extremely high-fidelity patterning (high resolution with low edge roughness) and accomplish this at photosensitivities compatible with cost of ownership requirements. The need for fast photospeed at high resolution must be balanced with the constraints of photon stochastics, which will increase in importance towards the 3-nm node. Process latitude is another critical factor as the challenges of pattern collapse mount further with decreasing critical dimensions. In order to address these challenges, we invite papers on following topics:

  • Material design to meet the 3-nm node resolution LER and sensitivity (RLS) requirements and imaging process window
  • Fundamental operating mechanisms of photoresist materials designed for the 3-nm node and beyond
  • Patterning variability: line width roughness (LWR) or local critical dimension uniformity (LCDU) and its sources, including photon or material stochastic effects in the resist
  • Impact of fundamental resist design strategy on OPC
  • Pattern transfer into relevant underlayers and device structures, including novel etch processes
  • Metrology related to resists designed for the 3-nm node, at relevant dimensions.

All papers will undergo the standard peer-review process for the Journal of Micro/Nanolithography, MEMS and MOEMS (JM3). Peer review will commence immediately upon manuscript submission, with a goal of making a first decision within 6 weeks of manuscript submission. Special sections are opened online once a minimum of four papers have been accepted. Each paper is published as soon as the copyedited and typeset proofs are approved by the author. Manuscripts should be submitted to SPIE according to the journal guidelines at http://spie.org/jm3. A cover letter indicating that the submission is intended for this special section should be included. For more information, please contact the guest editors or jm3@spie.org.

Manuscripts are due 1 July 2017.


Published Special Sections:

Alternative Lithographic Technologies V (July-September 2016)
Guest Editors: Chris Bencher and Ricardo Ruiz

Control of Integrated Circuit Patterning Variance, Part 2: Image Placement, Device Overlay, and Critical Dimension (April-June 2016)
Guest Editor: Alexander Starikov

Photomask Manufacturing Technology (April-June 2016)
Guest Editors: Masato Shibuya, Morihisa Hoga, and Kiwamu Takehisa

Extending VLSI and Alternative Technology with Optical and Complementary Lithography (April-June 2016)
Guest Editors: Kafai Lai and Andreas Erdmann

On the Interface of Holography and MEMS (October-December 2015)
Guest Editors: Partha Banerjee, Pierre-Alexandre Blanche, Christophe Moser, and Myung K. Kim

Alternative Lithographic Technologies IV (July-September 2015)
Guest Editors: Douglas J. Resnick, Ricardo Ruiz, and Hans Loeschner

Control of Integrated Circuit Patterning Variance Part 1: Metrology, Process Monitoring, and Control of Critical Dimension (April-June 2015)
Guest Editors: Alexander Starikov and Matthew Sendelbach

Continuation of Scaling with Optical and Complementary Lithography (January-March 2015)
Guest Editors: Kafai Lai and Andreas Erdmann

Holistic/Hybrid Metrology (October-December 2014)
Guest Editors: Alok Vaid and Eric Solecky

Alternative Lithographic Technologies III (July-September 2014)
Guest Editors: Douglas J. Resnick, Christopher Bencher, and Ricardo Ruiz

Metrology and Inspection for 3-D Integrated Circuits and Interconnects (January-March 2014)
Guest Editors: Yi-sha Ku and Alexander Starikov

Emerging MOEMS Technology and Applications (January-March 2014)
Guest Editors: M. Edward Motamedi, Joel Kubby, Patrick Ian Oden, and Wibool Piyawattanametha

Optical Lithography Extension Beyond the 14-nm Node (January-March 2014)
Guest Editors: Will Conley and Kafai Lai

Advanced Fabrication of MEMS and Photonic Devices (October-December 2013)
Guest Editors: Georg von Freymann, Mary Ann Maher, and Thomas J. Suleski

Advanced Plasma-Etch Technology (October-December 2013)
Guest Editors: Ying Zhang, Qinghuang Lin, and Gottlieb S. Oehrlein

Alternative Lithographic Technologies (July-September 2013)
Guest Editors: Will Tong and Douglas J. Resnick

Photomasks for EUV Lithography (April-June 2013)
Guest Editors: Christopher J. Progler and Frank E. Abboud

Alternative Lithographic Technologies (July-September 2012)
Guest Editors: William M. Tong, Douglas J. Resnick, and Benjamin Rathsack

Directed Self-Assembly (July-September 2012)
Guest Editors: Daniel P. Sanders and William H. Arnold

Reliability, Packaging, Testing, and Characterization of MEMS and MOEMS III (April-June 2012)
Guest Editors: Sonia M. García-Blanco and Rajeshuni Ramesham

EUV Sources for Lithography (April-June 2012)
Guest Editors: Vivek Bakshi and Anthony Yen

Dimensional Metrology with Atomic Force Microscopy: Instruments and Applications (January-March 2012)
Guest Editors: Ronald Dixson and Ndubuisi G. Orji

Theory and Practice of MEMS, NEMS, and MOEMS (January-March 2011)
Guest Editor: Yu-Cheng Lin

Reliability, Packaging, Testing, and Characterization of MEMS and MOEMS II (October-December 2011)
Guest Editor: Rajeshuni Ramesham

Line-Edge Roughness (October-December 2011)
Guest Editors: Chris A. Mack and Will Conley

Metrology (October-December 2011)
Guest Editors: Moshe Preil and Shaunee Cheng

BioMEMS, Theory and Practice of MEMS/NEMS, and Sensors (July-September 2010)
Guest Editor: Yu-Cheng Lin

Extreme-Ultraviolet Lithography (October-December 2009)
Guest Editors: Kevin Cummings and Kazuaki Suzuki

Reliability, Packaging, Testing, and Characterization of MEMS and MOEMS (July-September 2009)
Guest Editors: Rajeshuni Ramesham and Allyson L. Hartzell

Computational Lithography (July-September 2009)
Guest Editors: Donis Flagello and Chris Mack

Theory and Practice of MEMS/NEMS/MOEMS, RF MEMS, and BioMEMS (April-June 2009)
Guest Editor: Yu-Cheng Lin

Extreme-Ultraviolet Interference Lithography (April-June 2009)
Guest Editor: Franco Cerrina

Double-Patterning Lithography (January-March 2009)
Guest Editor: William H. Arnold

Silicon-Based MOEMS and Their Applications (April-June 2008)
Guest Editors: Harald Schenk and Wibool Piyawattanametha

Resolution Enhancement Techniques and Design for Manufacturability (July-September 2007)
Guest Editor: Alfred K. K. Wong

Bio-MEMS and Microfluidics (April-June 2006)
Guest Editors: Wanjun Wang and Ian Papautsky

Nanopatterning (January-March 2006)
Guest Editors: Kees Eijkel, Jill Hruby, Glen Kubiak, M. Scott, Volker Saile, and Steven Walsh

MOEMS Design, Technology, and Applications (October-December 2005)
Guest Editor: M. Edward Motamedi

Polarization and Hyper-NA Lithography (July-September 2005)
Guest Editor: Donis Flagello and Christopher J. Progler

Next Generation Lithography (January-March 2005)
Guest Editor: Walt Trybula

Mask Technology for Optical Lithography (April-June 2004)
Guest Editor: Kevin D. Cummings and Frank M. Schellenberg

Immersion Lithography (January-March 2004)
Guest Editor: William H. Arnold

Surface Micromachining (October-December 2003)
Guest Editors: Jeffry J. Sniegowski and James H. Smith

Micro-Optics for Photonic Networks (October-December 2003)
Guest Editor: Thomas J. Suleski

Lithography for Sub-100-nm Device Fabrication (October-December 2002)
Guest Editor: William H. Arnold

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