2008. 1 ~ 2008. 11|Project Assistant, Department of Electronic Science and Technology in Shenzhen University
2009. 1 ~ 2013. 7|Doctoral Student, Research Center for Integrated Electronics and Key Lab for Biomedical Informatics and Health Engineering in Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences
2005 Bachelor Degree in Optical Information Science and Technology, Huazhong University of Science and Technology
2007 Master Degree in Opto-electronic Information Engineering, Huazhong University of Science and Technology
Thesis: Transmissivity measuring system of the plume penetrated by 10.6 um laser
2013 Doctor Degree in Optical Engineering, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences
Dissertation: Study on linearly tunable CW single-mode external cavity semiconductor laser
Fengqi Yu (于峰崎), born in Harbin, China, in 1962. He earned his Ph. D. degree in Integrated Circuits and Systems Lab (ICSL) at UCLA. In 2006, he joined Shenzhen Institutes of Advanced Technology (SIAT) as a full professor and director of integrated electronics department. Before joining SIAT, he worked at Rockwell Science Center (USA), Intel (USA), Teradyne (USA), Valence Semiconductor (USA), and Suzhou CAS IC Design Center (China). His R&D interests include CMOS RF integrated circuit design, CMOS sensor design, wireless sensor networks, RFID, and wireless communications.
2011 Dean Excellence Award, from Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences
2009~2013 The research, development, and integration of a new NIR tunable external cavity diode laser (ECDL) based on a single cavity, all-dielectric, thin film Fabry-Perot filter. This tunable ECDL can be linearly tuned and used in the application of environmental gas monitoring, precise measurements, atomic and molecular laser spectroscopy research, and so on.