Reine, Marion B.

Dr. Marion B. Reine

Consultant on Infrared Detectors

Retired Member

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Area of Expertise: Infrared detectors, Physics of semiconductor devices
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Summary
Dr. Marion B. Reine is an independent consultant on the physics and technology of semiconductor infrared photon detectors. He provides technical analysis and support to both government and industry on photon detectors for a wide range of wavelengths and applications. He also collaborates with the Computational Electronics Group in the Department of Electrical and Computer Engineering at Boston University, Boston, Massachusetts on numerical simulations of nBn infrared detectors.

Dr. Reine’s graduate education in semiconductor physics was done at the Massachusetts Institute of Technology, after which he joined the Honeywell Radiation Center in 1969.

Dr. Reine’s career in infrared detectors at BAE Systems in Lexington, Massachusetts and its legacy companies (Honeywell, Loral, Lockheed Martin) spanned over forty years. He achieved international recognition as a leader in the science and technology of HgCdTe infrared detectors. His career included periods as an individual technical contributor, a supervisory manager, and a program manager. His individual technical focus was on the design, analysis, device physics, science and technology of new and advanced semiconductor infrared detectors for a wide variety of DoD and NASA applications. Most of his work was in the semiconductor alloy HgCdTe, but he also developed detectors in other semiconductors such as AlGaN and InGaAs.

Dr. Reine is skilled in semiconductor device physics, design, analysis and modeling, in pre-proposal and proposal organization and writing, in program formulation and organization, in mentoring and teaching young scientists and engineers, and in fostering and directing university/industry research collaborations.

In 1979 he was named a Honeywell Fellow. In 1998 he was elected a Fellow of the American Physical Society “for technical leadership in the design and development of innovative photoconductive and photovoltaic HgCdTe devices for advanced infrared detectors.” In 2004 he received th
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