I have more than 7 years of experience in research and development of semiconductor devices.
During my doctorate, my research primarily focused on design, fabrication and characterization of long-wavelength infrared photo-diodes for low leakage and low excess noise performances based on band-engineered III-V InAs/GaSb super-lattices. III-V based APDs provide easier integration with silicon ROIC with equivalent performance of incumbent II-VI technology.
Currently working as a device research engineer at Non-volatile Memory Group, Intel Corp. I play a critical role in core technology development of emerging memories.