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Sensing & Measurement

Gianaurelio Cuniberti: Light-Induced Electrical Switching of Porphyrin-Covered Silicon Nanowire FETs

A plenary talk from SPIE Smart Structures/NDE 2014

31 March 2014, SPIE Newsroom. DOI: 10.1117/2.201403.26

Nanowires represent excellent building blocks for future nanoelectronics, due to their efficient charge transport characteristics. Here we present light-induced switching behaviour of porphyrin-coated silicon nanowire field effect transistors (Si NW FETs) and demonstrate their capabilities for design of hybrid nanodevices -- consisting of organic complexes and inorganic nanowires. Switching of Si NW FETs highly reflects the electrical change of porphyrin molecules by light. To demonstrate significant factors of concentration-dependent switching of porphyrin-covered devices, electrical charging mechanism through molecules and nanowires has been understood, that allows the systematic integration of the hybrid devices.

Gianaurelio Cuniberti is Chair of Materials Science and Nanotechnology at the Dresden University of Technology and the Max Bergmann Center of Biomaterials Dresden. He studied Physics at the University of Genoa and at the University of Hamburg, and has been a visiting scientist at MIT and the Max Planck Institute for the Physics of Complex Systems in Dresden.