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Illumination & Displays

Shuji Nakamura plenary presentation: Future and present technologies of solid state lighting

Presented at SPIE Photonics West 2015

5 March 2015, SPIE Newsroom. DOI: 10.1117/2.3201503.12

Shuji Nakamura, University of California Santa Barbara (USA)Blue nitride-based LEDs have been grown hetero-epitaxially on sapphire, SiC and Si substrates. Homo-epitaxial growth of LEDs grown on GaN substrate has been shown to improve the reliability and to increase the power density per chip. Laser lighting also would be a promising lighting technology to improve the power density per chip in the future.

Shuji Nakamura received BE, MS, and PhD degrees in electrical engineering from the University of Tokushima, Japan in 1977, 1979, and 1994, respectively. In 1993 and 1995 he developed the first group-III nitride-based blue/green LEDs and violet laser diodes. Since 2000, he has been a professor of Materials and ECE Departments of University of California Santa Barbara (USA).

Nakamura recieved the 2014 Nobel Prize in Physics jointly with Isamu Akasaki and Hiroshi Amano "for the invention of efficient blue light-emitting diodes which has enabled bright and
energy-saving white light sources."