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Micro/Nano Lithography

Mark van de Kerkhof: Enabling sub-10nm node lithography: presenting the NXE:3400B EUV scanner with improved overlay, imaging, and throughput

Presented at SPIE Advanced Lithography 2017.

14 March 2017, SPIE Newsroom. DOI: 10.1117/2.3201703.16

Mark van de Kerkhof, ASML (Netherlands) With the introduction of its fifth-generation NXE:3400B scanner, ASML (Netherlands) has brought EUV to High-Volume Manufacturing for sub-10nm node lithography.

In this keynote address, Mark van de Kerkhof of ASML, presents lithographic performance results obtained with the NXE:3400B, characterized by an NA of 0.33, a Pupil Fill Ratio (PFR) of 0.2 and throughput capability of 125 wafers per hour (or w/h).

Tight CD control at improved resolution is obtained through a number of innovations: the NXE:3400B features lower aberration levels and a revolutionary new illumination system, offering improved pupil-fill ratio and larger sigma range. Overlay and Focus are further improved through the use of an improved wafer clamp and improved scanner controls.

Mark van de Kerkhof received an MSc in Applied Physics from Eindhoven University of Technology in 1995. He began his career at ODME, working on the development of the DVD mastering process. In 1999, he joined ASML as senior designer and project manager, working on development of miscellaneous sensors as well as projection optics in both DUV and EUV scanners. He is currently Product System Engineer for the NXE:3400B EUV scanner.