At the SPIE Advanced Lithography conference in San Jose, Calif., Applied Materials, Inc., announced the industry's first in-line 3D CD SEM* metrology tool for solving the challenges of measuring the high aspect ratio and complex features of 3D NAND and FinFET devices.
The new Applied VeritySEM® 5i system offers state-of-the-art high-resolution imaging and backscattered electron (BSE) technology that enable exceptional CD control in-line. Using the VeritySEM 5i system can speed up chipmakers' process development and production ramp, and improve device performance and yield in high-volume production.
The VeritySEM 5i system's exceptional in-line accuracy and process control eliminate more time-consuming and costly off-line wafer cross-sectioning while helping chipmakers to streamline process development, improve device performance and yield, and shorten ramp times to high-volume production.
An advanced edge contour extraction algorithm is now available, significantly improving OPC modeling predictability. This enhanced capability is based on precise SEM-based feature contour extraction overlaid accurately on the design intent. This feed to the EDA tool allows multiple 2D measurements for each feature set.