SPIE Membership Get updates from SPIE Newsroom
  • Newsroom Home
  • Astronomy
  • Biomedical Optics & Medical Imaging
  • Defense & Security
  • Electronic Imaging & Signal Processing
  • Illumination & Displays
  • Lasers & Sources
  • Micro/Nano Lithography
  • Nanotechnology
  • Optical Design & Engineering
  • Optoelectronics & Communications
  • Remote Sensing
  • Sensing & Measurement
  • Solar & Alternative Energy
  • Sign up for Newsroom E-Alerts
  • Information for:
    Advertisers
SPIE Photonics West 2018 | Call for Papers

SPIE Defense + Commercial Sensing 2018 | Call for Papers

SPIE Journals OPEN ACCESS

SPIE PRESS

SPIE PRESS

Print PageEmail Page

Optoelectronics & Communications

Photodiode

Opto Diode

Opto Diode announces a new single active area photodiode featuring 100 mm2 - the SXUV100. The highly sensitive device permits detection to 1 nm, and provides a remarkably stable response after exposure to EUV/UV conditions. Best applications include detection of 13.5 nm wavelengths or any high power density source monitoring between 1 nm - 150 nm.

The new photodiode is operational from 1nm to 1000 nm, with peak photon responsivity at 0.27A/W (at 1 nm) and 0.33 A/W (at 850 nm). Shunt resistance (Rsh) @ ± 10 mV is 10 MOhms (min.), the capacitance is typically 6 nanofarads (nF), and the response time is typically 250 nanoseconds.

The new SXUV100's operating and storage temperatures range from -10 degrees C to 40 degrees C (ambient) and from -20 degrees C to 80 degrees C (in nitrogen or vacuum conditions). The maximum junction temperature is 70 degrees C and the lead-soldering temperature is 260 degrees C at 0.080 in. from the case for 10 seconds.

Opto Diode's new 100 mm2 photodiodes are available in single or volume quantities.


www.optodiode.com