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SPIE Photomask Technology + EUV Lithography 2017 photos

 

SPIE Photomask Technology + EUV Lithography

 

 

 

11 – 14 September 2017
Monterey, California, USA


Joint panel discussion, SPIE Photomask Technology and Extreme UV Lithography

Everyone votes: A joint panel session provided a chance to weigh
in on managing EUVL without actinic patterned mask inspection.

Tsu-Jae King Liu, Stanford University, at SPIE Photomask Technology

Tsu-Jae King Liu
Gregory McIntyre, imec, at Extreme UV Lithography

Gregory McIntyre

The week of 11–14 September saw the first co-located meeting of SPIE Photomask Technology and Extreme UV Lithography, sponsored by SPIE, EUREKA, imec, and EIDEC, held in the lovely city of Monterey. The combination created a blend of topics, industry presentations, and sponsorships that were embraced by the attendees.

More than 600 attendees came to hear technical talks, visit the 24- company exhibition, and take part in the networking events. The joint sessions were packed to capacity.

Standing-room-only audiences heard the event’s two keynote addresses: Tsu-Jae King Liu from University of California, Berkeley, spoke on “Extending the era of Moore’s Law,” and Gregory McIntyre of imec spoke on “EUV readiness, insertion opportunities, and challenges for logic and memory.”

A well-established Photomask panel was joined by experts in EUVL and was designed by the organizers to be of interest to the photomask industry, to the lithographers who rely on photomasks, and to attendees interested in scaling and its risks.

The traditional night of entertainment presented by a dedicated troupe of volunteers from both the Photomask and EUVL communities earned laughs and appreciation from the audience.

The EUV Lithography conference was chaired by Paolo Gargini (Stanford University), Kurt Ronse (imec), Patrick Naulleau (Lawrence Berkeley National Lab), and Toshiro Itani (EUVL Infrastructure Development Ctr., Inc.).

Peter Buck (Mentor Graphics Corp.) chaired the Photomask Technology conference, with co-chair Emily Gallagher (imec).

The event will return to Monterey 16–20 September 2018.

 


Photos courtesy Bernd Geh.

Peter Buck and Christopher Spence, SPIE Photomask Technology 2017

Conference chair Peter Buck (at left) assists
presenter Christopher Spence (ASML Brion).
Emily Gallagher, SPIE Photomask Technology 2017

Emily Gallagher (imec)
will serve as Photomask chair for 2018.
2017 SPIE BACUS Award

From left, Elmar Platzgummer and Hans Loeschner
(IMS Nanofabrication AG) accept the 2017 BACUS
Award from Frank Abboud (Intel Corp.).
Hiroaki Morimoto (Toppan Printing Co.) was
announced as the recipient of the 2017 BACUS
Lifetime Achievement Award.
2017 EMLC Award

Clemens Utzny (Advanced Mask Technology
Centre GmbH) accepts the EMLC 2017
Best Paper Award from Uwe Behringer
(UBC Microelectronics), for "Splendidly blended:
a machine learning set-up for CDU control"
[10451-68].
2017 Photronics Best Student Paper Award, Stuart Sherwin

The Photronics Best Student Paper Award went to
Stuart Sherwin, University of California,
Berkeley, et al. for "Actinic EUV scatterometry
for parametric mask quantification"
[10450-27] (more finalists below).
Zeiss Best Student Paper Award, Jae-Hun Park

Jae-Hun Park et al., Hanyang University, received
first place in the Zeiss Best Student Poster
competition, for "Thermo-mechanical distortion
caused by particle defect on extreme ultraviolet
pellicle" [10450-63].
Zeiss Best Student Paper Award, Sascha Brose

Sascha Brose, RWTH Aachen Universität, et al.
received second place in the Zeiss Best Student
Poster competition, for "Optimized phase-shifting
masks for high-resolution resist patterning by
interference lithography" [10450-81].
Zeiss Best Student Paper Award, Myung-Gi Kang

Myung-Gi Kang et al., Hanyang University, received
third place in the Zeiss Best Student Poster
competition, for "Thermo-mechanical behavior
analysis of extreme-ultraviolet pellicle cooling by
H2 flow " [10450-59].

Additional finalists in the Photronics Best Student Paper competition included (overall winner in photo above):

  • “EUV mask roughness can recover litho-tool aberrations” [10450-28] Aamod Shanker, University of California, Berkeley, et al.
  • “Evaluating mechanical characteristic of SiNx EUV pellicle membrane” [10450-29] Yong Ju Jang et al., Hanyang University
  • “Enhanced critical feature representation for fuzzy-matching for lithography hotspot detection” [10451-37] Mohamed Elshabrawy, Cairo University and Mentor Graphics Egypt, et al.

Photomask Best Poster awards were made to:

  • First place: “Transparent and conductive backside coating of EUV lithography masks for ultra- short pulse laser correction” [10451-66] Rinu Maniyara et al., ICFO — Institut de Ciències Fotòniques
  • Second place: “Laser-scan lithography and electrolytic etching for fabricating mesh structures on stainless-steel pipes 100μm in diameter” [10451-55] Hiroshi Takahashi et al., Tokyo Denki University
  • Third place: “The deposition of the Cr binary film and attenuated phase-shift film on the FPD photomask substrate” [10451-54] Takashi Yagami et al., Nikon Corp.
SPIE Photomask Technology + EUV Lithography exhibition SPIE Photomask Technology + EUV Lithography exhibition
SPIE Photomask Technology + EUV Lithography entertainment SPIE Photomask Technology + EUV Lithography entertainment
SPIE Photomask Technology + EUV Lithography entertainment SPIE Photomask Technology + EUV Lithography entertainment
SPIE Photomask Technology + EUV Lithography SPIE Photomask Technology + EUV Lithography
SPIE Photomask Technology + EUV Lithography SPIE Photomask Technology + EUV Lithography
SPIE Photomask Technology + EUV Lithography SPIE Photomask Technology + EUV Lithography
SPIE Photomask Technology + EUV Lithography SPIE Photomask Technology + EUV Lithography
SPIE Photomask Technology + EUV Lithography SPIE Photomask Technology + EUV Lithography
SPIE Photomask Technology + EUV Lithography SPIE Photomask Technology + EUV Lithography
SPIE Photomask Technology + EUV Lithography SPIE Photomask Technology + EUV Lithography
SPIE Photomask Technology + EUV Lithography SPIE Photomask Technology + EUV Lithography
SPIE Photomask Technology + EUV Lithography SPIE Photomask Technology + EUV Lithography
SPIE Photomask Technology + EUV Lithography SPIE Photomask Technology + EUV Lithography
SPIE Photomask Technology + EUV Lithography SPIE Photomask Technology + EUV Lithography
SPIE Photomask Technology + EUV Lithography SPIE Photomask Technology + EUV Lithography
SPIE Photomask Technology + EUV Lithography SPIE Photomask Technology + EUV Lithography
SPIE Photomask Technology + EUV Lithography SPIE Photomask Technology + EUV Lithography
SPIE Photomask Technology + EUV Lithography SPIE Photomask Technology + EUV Lithography
SPIE Photomask Technology + EUV Lithography SPIE Photomask Technology + EUV Lithography
SPIE Photomask Technology + EUV Lithography SPIE Photomask Technology + EUV Lithography
SPIE Photomask Technology + EUV Lithography SPIE Photomask Technology + EUV Lithography