The work of Rensselaer Polytechnic Institute (RPI) professor and SPIE Fellow Fred Schubert was cited in the announcement of the 2014 Nobel Prize in Physics winners made by the Royal Swedish Academy of Sciences earlier this month.
As a pioneer in the field of LED technology, Schubert is globally recognized as an expert in compound semiconductor materials and devices, particularly the doping of compound semiconductors.
Schubert's primary research interest is in the field of compound semiconductor materials and devices. His studies include epitaxial growth, materials characterization, device processing and fabrication, device design, and device characterization. Devices include heterobipolar transistors, lasers and light-emitting diodes for communication, lighting, and sensing applications.
He is the author of three books: Doping in III-V Semiconductors, Delta Doping of Semiconductors, and Light-Emitting Diodes. He is the inventor and co-inventor of 35 patents and is an author of more than 300 papers published in scientific journals including 38 in the SPIE Digital Library.
Schubert's other recognitions include a Senior Research Award from the Humboldt Foundation, Discover magazine's Discover Award for Technological Innovation, R&D magazine's R&D 100 Award, and Boston University's Provost Innovation Fund Award.
Schubert is a long-time organizer of the conference on Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting at SPIE Photonics West.
More information is in the RPI release.
Schubert described is work in a recent SPIE.tv video interview.