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SPIE Advanced Lithography 2011 Event News and Photos

SPIE Advanced Lithography

Bookmark this page to follow the week's activities, and connect via #AL11 on Twitter.

Wednesday 2 March

Tuesday 1 March

Monday 28 February

Photos from the event

Wednesday 2 March

It's official: attendance is up, response is 'overwhelming'

SPIE Advanced Lithography exhibition

Total attendance at Advanced Lithography is up this year -- the official total attendance number announced at the close of the exhibition today was 2,350, an increase of 11% over last year. If you think the technical rooms seem particularly full, you're right. Technical attendance is up 27% this year over 2010.

New products continued to draw attention on the second day of the Advanced Lithography exhibition, and exhibitors were happy with both the number of booth visitors as well as who those visitors were.


"Our product launch one month ago has been very well received -- however, the interest here has been overwhelming," said Guenter Janello of Qoniac. "With all of the competent, potential customers, we're glad we chose SPIE Advanced Lithography as the first show to exhibit our new software."

Brewer Science

Brewer Science -- celebrating its 30th anniversary this year -- brought two new products to show this week. Brewer's Alex Smith emphasized the importance of the connection between the exhibition hall and the conference rooms."This is our core conference," he said. "We exhibit and we present papers. If you are not publishing papers, too, you aren't going to get recognized for new innovation."

Exhibition visitors were happy as well.

"I came up to visit the Advanced Lithography exhibition and discovered some things I didn't even know existed, and ideas I hadn't thought of before," said Brent Bergner of Spectrum Scientific. "This is a great place to meet smart people!"

With technical attendance up, it wasn't surprising that overflow rooms were needed for many sessions.

SPIE Advanced Lithography conference

Record-setting poster session

SPIE Advanced Lithography poster session

Poster sessions are always well-attended at Advanced Lithography, but Wednesday evening's session set an all-time attendance record for the 35-year history of the meeting. More than 1,400 people came to talk with authors and enjoy some congenial networking.

Tuesday 1 March

Trending up!

While it's too early in the week for definitive numbers, attendance at events has been strong at the start of the week, living up to pre-meeting registration counts that were up 12% from last year. Energy was good in the exhibition hall, and the opening day plenary session set a new attendance record. Between the presentation hall and the overflow room, this year's audience of nearly 1,400 topped the previous record set in 2008.

Mallorie Coffin of Moxtek put it this way: "I am at Advanced Lithography to take two courses, attend the technical presentations, and walk the exhibition. The course I took on the weekend is exactly what I need to better prepare me for my job.

"The exhibition has been great! Moxtek is growing in new directions, and I came to the exhibition to look for new suppliers. Beginning the very first morning, I found solutions that we didn't know existed. You can do research on the internet but there is a limit to what you can find online. Nothing compares to meeting with exhibitors in person to learn about their new products, including some that haven't yet been released. I can't wait to share these solutions with my boss."

SPIE Advanced Lithography exhibition

Above, Peter Choi, President and Director of Technology at NANO-UV, describes his company's plasma-based extreme ultraviolet (EUV) light source for next-generation lithography, which has never been shown in public before today's exhibition opening.

The exhibition runs through Wednesday afternoon. See more photos in the event photo gallery.

Women in Optics: building networks

Women in Optics luncheon

An ever-expanding group of women studying, teaching, and practicing lithographics gathered for a networking luncheon. Discussion ranged from career enhancement and SPIE Fellow promotion, to the papers authors were presenting at Advanced Lithography.

This is ... Lithographic Jeopardy!

SPIE Advanced Lithography

Applied Materials presented an interactive event celebrating 25 years of industry innovation in metrology, inspection, and process control to the attendees of Advanced Lithography.

Using state-of-the art gaming technology, attendees pitted their knowledge of the industry's challenges, solutions, and technical advances over the years with that of technology experts, to win prizes. Game buzzers, prizes, "experts" and television jingles made for a lively crowd.

Posters -- and networking

Poster session at SPIE Advanced Lithography

Tuesday night's poster session offered a chance not only to display a presentation, but to network in a casual atmosphere. Hundreds of attendees capped the day enjoying a Mexican buffet while perusing some of the most important advances in technology.

Monday 28 February

First up: the plenary session

Donis Flagello

Symposium Chair Donis Flagello (Nikon Research Corp. of America) opened the week welcoming an overflow crowd to the plenary session -- a session that may have been the most animated presentation in the history of the symposium.

Roadmap for the future

In a sequence of computer-generated animations depicting futuristic scenes, Luc Van den hove, the CEO of IMEC, shared his vision of how applications of semiconductor technology will further enhance human capabilities. He then presented the necessary device roadmap to make that vision a reality, and discussed the various lithographic options for realizing those devices.

"We are people of bits and bytes," he said. "Just imagine a day without your smart phone." Humans, he said, have quickly become accustomed to knowing their location precisely and having omniscience through the knowledge fed to them through their mobile devices. You can access a seemingly infinite amount of information, and know exactly where you are and where your family and friends are just by looking at a handheld device.

With the information communication technology explosion, led by the rapid growth of mobile phone use (up to 4-5 billion phones in use today), Van den hove said that there is an increasing need to lower energy consumption to realize true advances that will help solve the large problems that mankind faces.

There are a number of drivers, including the growing interest in e-nose applications. These are sensor applications that enable a safer environment, such as the monitoring of air or food quality. Another is the incredible adoption of tablet devices. Beyond simple 2D displays, there is also growing interest in 3D video displays that are expected to result in an 80% increase in market share in 2011, with applications in entertainment, teleconferencing, and medical procedures.

Looking even further out, Van den hove  showed that there is the possibility of extending vehicle awareness to develop eco-friendly autonomous cars. In healthcare, he showed the possibility of mating microfluidics and biosensors to enable more preventative, predictive care for a population that will see a doubling in the number of people over the age of 60 by the year 2050.

Since 1960 and until about 10 years ago, lithographic advances dominated the scaling advances. This was followed by materials advances such as the introduction of strain at the 90 nm node and high-k materials at the 45 nm node. Further advances in materials, especially in using high-mobility materials in the channels, could bring the industry to the 10 nm node. However, to go further, he said, we should be looking at ways to stack dies to take advantage of the third dimension.

As for the options, he focused on the use of EUV because of IMEC's investment there. He highlighted some of the advantages of the new NXE3100, which will be discussed in more detail throughout the week here in San Jose. Currently, IMEC has seen a 20x increase in productivity, and their goal is to increase that another 10x by the end of 2011. The key to further extendibility in EUV will be to keep the economics under control when moving to other possibilities, such as more complex systems (up to 8 mirrors), lower wavelengths, and double patterning.

Moore's Law for the next decade

Shang-yi Chiang of (Taiwan Semiconductor Manufacturing Corp.) shared similar thoughts on extending Moore's Law in this new decade, saying that its future is in the hands of the attendees to this conference.

Echoing Van den hove, Chiang said that originally, optical lithography has been the key to staying aligned with Moore's Law. However, if one looks at a comparison of the costs of producing at lower and lower nodes, one can see that extension of current ArF immersion techniques will become increasingly more costly than EUV or multiple-electron-beam direct write (MEBDW). So, based solely on economics, he said, it's clear that technology migration to next-generation lithography is necessary to sustain Moore's Law. He then demonstrated very fine resolution results using both MEBDW and EUV.

Chiang listed the primary concerns with EUV: slow progress on EUV sources, inadequate infrastructure on EUV masks, and the extensibility of EUV resists.

However, he illustrated some favorable trends, such as a trend to double- and triple-gate transistors, improvement in the RC time constant, and a look beyond the 200 mm wafer size. TSMC, for instance, is planning on creating their first 450 mm wafer pilot line for the 20 nm node in 2013-2014, and is planning on a production line in 2015-2016.

Chiang summed up that lithography will play a key role in enabling CMOS scaling down to the 7-8 nm node based on the current, proven technology; however, he warned, the industry needs to collaborate to control wafer cost allowing scaling to continue before it reaches the physical limit.

Excellence in lithography

Donis Flagello presents the Frits Zernike Award to Andrew Neureuther

Andrew Neureuther (University of California, Berkeley), at right above, is the 2011 recipient of the Frits Zernike Award for Microlithography in recognition of his pioneering contributions and leadership of university research on modeling and understandings of lithography physics for semiconductor manufacturing including electromagnetic scattering, optical imaging, resist profile evolution, defect printability and phase-sifting masks for precision instruments. Neureuther accepted his award Monday morning from Symposium Chair Donis Flagello.

Four new Fellows of the Society

Each year, SPIE promotes members as new Fellows of the Society, in recognition of their significant scientific and technical contributions. Of the 67 new Fellows SPIE has named this year, four new Fellows were recognized at SPIE Advanced Lithography:
  • Ahmed Hassanein
  • Naoya Hayashi
  • John Petersen
  • Robert Socha.

Best of the best: Awards for top papers

Several best-paper awards will be presented this week.

Monday saw the presentation of the 2010 Diana Nyyssonen Memorial Award for the Best Paper on Metrology in the 2010 conference Metrology, Inspection, and Process Control for Microlithography (above). Honored were David Laidler, Koen D'Have, Anne Laure-Charley, and Shaunee Cheng, IMEC; and Peter Vanoppen, Mircea Dusa, ASML.

The 2010 C. Grant Willson Award for Best Paper in the 2010 conference Advances in Resist Materials and Processing Technology (above) was presented to lead author Xinyu Gu, The University of Texas at Austin, for the paper, "Photobase generator-assisted pitch division." The award is sponsored by IBM.

The presentation of the 2010 Jeffrey Byers Memorial Best Poster Award in the 2010 conference Advances in Resist Materials and Processing Technology (above) was awarded to Dan Sanders, Linda Sundberg, Masaki Fujiwara, Yoshiharu Terui, and Manabu Yasumoto for their paper titled, "High contact angle fluorosulfonamide-based materials for immersion lithography." The award is sponsored by TEL -- Tokyo Electron.

Leveraging semiconductor expertise for green energy

SPIE Advanced Lithography Nanotechnology and Patterning panel

The Nanotechnology and Patterning panel, sponsored by NIST, reviewed applications of nanostructures, nanoimprinting, and  other novel methods that can improve the efficiency of solar cells. For example, nanowires, nano-imprinted surfaces and tapered nanostructures were cited as ways to  convert more photos into electrons using "extreme light-trapping effects." 

Challenges being overcome in the molecular imprinting process include designs, materials, processes and careful control of defects. Unlike semiconductor applications, energy and display applications require controlled large-area nanopatterning given the ideal size of solar cells and displays. Several of the panelists described progress in controlled nano-patterned substrates and thin film deposition.

Red losses and blue losses contribute to efficiency losses in solar applications. Nano-scale designs can reduce these losses using patterning and nano materials. The goal is cutting costs, while reducing uncontrollable defects. Ultimately, according to Applied Materials' Robert Jan Visser, the issue is reducing "process cost per area," with different cost limits for semiconductors for chips versus high-resolution patterning on 3x3 meter plates manufactured for solar applications.

Naturally the materials and processing costs must come down dramatically before cutting-edge nanostructures can be used commercially in batteries, but the opportunity of higher power densities is attractive for applications such as electric cars. In addition to boosting the number of miles driven between charges, developments in nanoscience and engineering will help people recharge quickly and get back on the road.

IBM's Winfried Wilcke discussed the "Battery 500" coalition, which is researching methods including lithium air batteries based on nanostructures that pull oxygen from the air and use chemical processes to produce electricity. The goal of the coalition is batteries that enable electric vehicals to travel 500 miles before needing a recharge.

SPIE Press Releases

EUV is hot topic at SPIE Advanced Lithography 2011

First noted in 1965, Moore's law describes the trend of increasing computer technology, which has continued for more than 50 years and is expected to keep going for decades more in the semiconductor industry. A growth trend was certainly reflected at SPIE Advanced Lithography 2011 in San Jose, California, earlier this month, where extreme ultraviolet (EUV) lithography advances were a major focus.

Community readies for SPIE Advanced Lithography amidst market growth indicators

Bolstered by a record 2010 and continued indicators predicting market growth for the industry, the lithography community is preparing for its annual gathering at SPIE Advanced Lithography.

Media Coverage

Overview of SPIE Advanced Lithography 2011 (BetaSights)

WaferNEWS Watch: SPIE viewpoints (ElectroIQ Blog)

Applied, Magma managing yield for 20nm HVM (Semiconductor Manufacturing & Design)

SPIE 2011: An ASML review of EUV (Solid State Technology)

Imprint as the next NGL (Semiconductor Manufacturing & Design)

EbDW may sneak in behind masks (Semiconductor Manufacturing & Design)

The physics behinc Gigaphoton EUV source technology (Solid State Technology)

Cymer talks EUV source timelines and DUV highlights at SPIE (Solid State Technology)

EUV, resists, multibeam lithography chat with IMEC (Solid State Technology)

Imprint litho makes a good impression (EE Times)

SPIE 2011: Where are we now with EUV? (Solid State Technology)

Momentum builds for directed self-assembly (EE Times)

SPIE: A glimpse into Intel's litho future (Solid State Technology)

LithoGuru: SPIE Day 1-2-3-4 (Semiconductor Manufacturing & Design)

ASML claims progress in EUV (EE Times)

Executive profile: Terry Brewer, Brewer Science (Solid State Technology)

EUV lithography vs EBDW: Interview with Toppan Photomasks at SPIE (Solid State Technology)

GlobalFoundries, TSMC square off in litho (EE Times)

SPIE keynote: IMEC installs ASML pre-production EUV scanner NXE:3100 (Solid State Technology)

KLA tips EUV line, but issues warning (EE Times)

EUV may be too late for Intel's 10nm DR (Semiconductor Manufacturing & Design)

SPIE: EUV sources behind schedule (EE Times)

TSMC to make FinFETs in 450-mm fab (EE Times)

IMEC installs pre-production EUV litho (EE Times)

Startup rolls complementary litho (EE Times)

E-beam technology takes collective stage at SPIE Advanced Lithography symposium (FabTech)

SEMATECH to present advances in lithography and demonstrate leading-edge technologies at SPIE 2011 (Nanotechnology Now)

Related Links

SPIE Advanced Lithography website

Video interview: The road to EUV lithography (SPIE Newsroom)

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