Baltimore Convention Center
Baltimore, Maryland, United States
20 - 24 April 2015
Conference st102
Image Sensing Technologies: Materials, Devices, Systems, and Applications II
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Abstract Due:
6 October 2014

Author Notification:
15 December 2014

Manuscript Due Date:
23 March 2015

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Conference Chairs
  • Nibir K. Dhar, U.S. Army Night Vision & Electronic Sensors Directorate (United States)
  • Achyut K. Dutta, Banpil Photonics, Inc. (United States)

Program Committee
  • Homayoon Ansari, Jet Propulsion Lab. (United States)
  • Arvind I. D'Souza, DRS Sensors & Targeting Systems, Inc. (United States)
  • Ravi Dutt, Booz Allen Hamilton Inc. (United States)
  • Michael D. Gerhold, U.S. Army Research Office (United States)
  • John E. Hubbs, Ball Aerospace & Technologies Corp. (United States)
  • Nobuhiko P. Kobayashi, Univ. of California, Santa Cruz (United States)

Program Committee continued...
Call for
Image sensing technologies extending across broad bands of the spectrum from ultraviolet (UV) to long-wave infrared (LWIR) regions are advancing from novel sensing devices to camera system level implementations for novel commercial applications in a diverse market mix including automotive, biomedical, security and surveillance, agriculture and industrial machine vision. The goal of the conference is to convene the community of researchers active in image-sensing-related research covering materials, devices (image sensor), optics, hybridized or monolithic integration of optics and electronics, camera systems, and their novel applications, and provide a robust platform for the mutual exchange of ideas. The conference will address topics directed towards the understanding and advancement of the state of the art of image sensing technologies ranging from the UV to LWIR spectrum emphasizing emerging commercial and industrial applications of these technologies.

Silicon-based imaging sensors (CMOS/CCD) in large format especially for the visible (VIS) spectrum are today widely used in all types of consumer and commercial camera systems from security and surveillance, to smart phones and digital cameras, and recently making in-roads into more value-added applications such as emerging automotive and medical imaging. With this progression, technology innovation in Si-based camera systems not only requires large formats extending from tens of mega pixels to several giga-pixel formats, but also extending its spectrum range into the near-infrared (NIR) region.

Initially, image sensing technologies, especially in NIR, shortwave IR (SWIR), midwave IR (MWIR), and LWIR spectrum regions were used exclusively by the geo-satellite and defense industries. This was in part due to restrictions on dual-use, but overwhelmingly due to the high cost of such imaging devices, systems, and applications. However, this extremely expansive and spectrally unique portion of the wavelength spectrum was of high interest for such applications as space-based imaging and communications, upper atmospheric sensing, remote sensing, security and surveillance, and high-end machine vision. More recently, the UV to LWIR spectral bands have been identified as ideal for a wide range of imaging applications beyond scientific and defense sectors, to include the commercial industry from medical systems to bulk-cargo transit security, from automotive systems to agricultural crop monitoring systems, and from food safety to semiconductor quality control systems.

The need for low-cost small form-factor, light-weight, and low-power (SWaP-C) camera systems is pushing the technology innovation of image sensor technology to wafer level optics and/or electronics integration, either hybridized or monolithically integrated kinds. Researchers are seeking ways to embed more intelligence not only at the system software and algorithm levels that will power these image sensing applications, but also at the component and device level to include advanced and adaptive readout electronics, and image fusion processors. Moreover, the realization of various material systems especially on a wide range of substrate usage (e.g., Si, GaAs, dielectric, etc.), and composite materials along with sensing device performance advancement may revolutionize overall image sensing technologies in all spectrum regions.

In addition to Si-CMOS/CCD sensors of low-cost and larger formats expanding capabilities from VIS to NIR, recent developments in various detector materials systems, II-VI, III-V, and developments in room temperature IR detectors have resulted in significant material advances, signaling the possibility of higher-performance image sensing technologies at optimal cost to continue the trend towards broader commercial and defense industry application adoption.

The scope of the conference spans topics in new image sensor device-physics, new materials, components and subsystem level development for novel commercial and industrial applications. This conference intends to bring together scientists and engineers involved in the development and transition into commercial and industrial application spaces of novel image sensing concepts from UV to LWIR, broadband or multispectral imaging including various multiband combinations VIS-SWIR, VIS-LWIR, NIR-MWIR, SWIR-LWIR, and other options. Concepts relating to new broadband antireflection (AR) coating and lens technologies are also of interest. Cutting edge topics including image processing techniques on the focal plane array, smart reconfigurable readout electronics that bring more intelligence to the imaging devices, innovative packaging techniques, small scale compact systems, lens and optics integration at wafer scale, innovative camera encapsulation techniques with SWaP-C optimization in emerging applications are all of interest.

The sessions are organized to facilitate the exchange of ideas and promote the discussion of recent progress in image sensing device, materials, optics integration research, and trends toward application and system-level development. It is anticipated that this conference will foster cross-fertilization amidst many disciplines with participants being exposed to the entire range of scientific and engineering problems associated with the concepts-to-systems development pipeline, as well as the development roadmaps at commercial companies, research institutions, academia, and government agencies.

We are looking for papers that demonstrate state-of-the-art in novel image sensing technologies that will serve as tools for researchers in various disciplines. Papers are solicited for, but not limited to, the following topics:

Material Technologies for Image Sensing
  • composites material systems for image sensor
  • detector materials (i.e., Si, Ge, InSb, HgCdTe, GaAs, ZnS, ZnSe, etc.)
  • nanotechnologies (nanowires, nanopillars, plasmonic, metamaterials, etc.)-based image sensor
  • colloidal technologies for low-cost image sensor
  • smart sensing materials
  • broadband operation with sensitive detection and conversion of below-bandgap photons
  • nano-patterned structures for advanced light trapping schemes via holographic lithography
  • nano-enhanced absorbers in the IR range
  • advanced windows based on novel transparent conductors
  • bandstructure nano-engineering for high conversion performance
  • nano-engineered electron processes for suppression of thermalization and recombination losses
  • advanced passivation schemes for reducing surface recombination
  • epitaxial growth processes of materials on compliant and non-compliant substrates (e.g. HgCdTe, GaAs, InGaAs, etc.) for detectors, and other optoelectronic applications.

Device Technologies for Image Sensing
  • recent development of detectors for image sensing: UV, VIS, SWIR, MWIR, and LWIR
  • nano/micro bolometers
  • single-photon imaging: theoretical basis, sensor design, and production
  • large-format FPA and CMOS sensor
  • advanced quantum structures for large FPAs
  • innovative high-performance (e.g., high dynamic range and high frame rate, etc.) readout integrated circuits (ROIC)
  • on-chip (image sensor) image fusion processors
  • novel uncooled FPA technology.
  • biologically inspired techniques for IR detectors
  • development of advanced readout circuits including neuromorphic and bio-inspired circuit designs
  • development of Novel III/V materials and devices
  • transition efforts that raise the operating temperature and reduce the cost of “cooled” high performance infrared detectors
  • transition efforts that increase performance of “uncooled” infrared detectors.

Optics and Integration Technologies
  • theoretical studies and modeling of materials and photonic crystal applications to lenses and windows
  • hybrid and monolithic integration of optics and image sensors
  • wafer-level optics and electronics integration
  • on-chip and off-chip micro-lens array
  • broadband AR coating and lens and their integration to image sensors.

Image Sensing Systems and Applications
  • sensor system integration and performance
  • multiband image fusion systems
  • FPAs for simultaneous active and passive imaging
  • adaptive multimode sensing
  • multimodal-sensor-in-a-pixel FPA
  • time-of-flight and 3D imaging applications
  • developments in broadcast image sensor technology
  • multi-aperture imaging
  • computer simulation and modeling of single and multicolor detectors and systems
  • on-chip/off-chip vs component/algorithm trade-off strategies for system speed, efficiency, and SWaP-C maximization
  • imaging systems and camera image quality benchmarking: pinpointing defects that degrade image quality and their source (optics, sensor, processing).
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