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Proceedings of SPIE Volume 9779 • new

Advances in Patterning Materials and Processes XXXIII
Editor(s): Christoph K. Hohle; Rick Uchida
Format Member Price Non-Member Price
Softcover $105.00 $140.00

Volume Details

Volume Number: 9779
Date Published: 6 June 2016
Softcover: 58 papers (546) pages
ISBN: 9781510600140

Table of Contents
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Front Matter: Volume 9779
Author(s): Proceedings of SPIE
Metal oxide EUV photoresist performance for N7 relevant patterns and processes
Author(s): Jason Stowers; Jeremy Anderson; Brian Cardineau; Benjamin Clark; Peter De Schepper; Joseph Edson; Michael Greer; Kai Jiang; Michael Kocsis; Stephen Meyers; Alan Telecky; Andrew Grenville; Danilo De Simone; Werner Gillijns; Geert Vandenberghe
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Positive tone oxide nanoparticle EUV (ONE) photoresists
Author(s): Mufei Yu; Emmanuel P. Giannelis; Christopher K. Ober
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Characterizing and modeling electrical response to light for metal-based EUV photoresists
Author(s): Alessandro Vaglio Pret; Mike Kocsis; Danilo De Simone; Geert Vandenberghe; Jason Stowers; Angelo Giglia; Peter de Schepper; Antonio Mani; John J. Biafore
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Novel high sensitivity EUV photoresist for sub-7nm node
Author(s): Tomoki Nagai; Hisashi Nakagawa; Takehiko Naruoka; Seiichi Tagawa; Akihiro Oshima; Seiji Nagahara; Gosuke Shiraishi; Kosuke Yoshihara; Yuichi Terashita; Yukie Minekawa; Elizabeth Buitrago; Yasin Ekinci; Oktay Yildirim; Marieke Meeuwissen; Rik Hoefnagels; Gijsbert Rispens; Coen Verspaget; Raymond Maas
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Acid generation efficiency: EUV photons versus photoelectrons
Author(s): Dario L. Goldfarb; Ali Afzali-Ardakani; Martin Glodde
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Study of energy delivery and mean free path of low energy electrons in EUV resists
Author(s): Suchit Bhattarai; Andrew R. Neureuther; Patrick P. Naulleau
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Cross sections of EUV PAGs: influence of concentration, electron energy, and structure
Author(s): Steven Grzeskowiak; Amrit Narasimhan; Liam Wisehart; Jonathon Schad; Mark Neisser; Leonidas E. Ocola; Robert L. Brainard; Greg Denbeaux
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Quantification of the resist dissolution process: an in situ analysis using high speed atomic force microscopy
Author(s): Julius Joseph Santillan; Motoharu Shichiri; Toshiro Itani
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Study on stochastic phenomena induced in chemically amplified poly(4-hydroxystyrene-co-t-butyl methacrylate) resist (high performance model resist for extreme ultraviolet lithography)
Author(s): Takahiro Kozawa; Julius Joseph Santillan; Toshiro Itani
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Studying electron-PAG interactions using electron-induced fluorescence
Author(s): Amrit Narasimhan; Steven Grzeskowiak; Jonathan Ostrander; Jonathon Schad; Eliran Rebeyev; Mark Neisser; Leonidas E. Ocola; Gregory Denbeaux; Robert L. Brainard
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Characterization of 'metal resist' for EUV lithography
Author(s): Minoru Toriumi; Yuta Sato; Reiji Kumai; Yoshiyuki Yamashita; Koichi Tsukiyama; Toshiro Itani
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Metal containing material processing on coater/developer system
Author(s): Shinichiro Kawakami; Hiroshi Mizunoura; Koichi Matsunaga; Koichi Hontake; Hiroshi Nakamura; Satoru Shimura; Masashi Enomoto
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Characterization of HafSOx inorganic photoresists using electron stimulated desorption
Author(s): Ryan T. Frederick; Gregory S. Herman
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Systematic investigation of the synthesis, characterization and switching mechanism of metal oxide nanoparticle resists
Author(s): Meiliana Siauw; Ke Du; David Valade; Peter Trefonas; James W. Thackeray; Andrew Whittaker; Idriss Blakey
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Comparative study of line roughness metrics of chemically amplified and inorganic resists for EUV
Author(s): Roberto Fallica; Elizabeth Buitrago; Yasin Ekinci
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Contact/Via placement management for N7 logic and beyond
Author(s): Kenichi Oyama; Arisa Hara; Kyohei Koike; Masatoshi Yamato; Shohei Yamauchi; Sakurako Natori; Hidetami Yaegashi
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3D-ICs created using oblique processing
Author(s): D. Bruce Burckel
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Challenges for immersion lithography extension based on negative tone imaging (NTI) process
Author(s): Michihiro Shirakawa; Tadashi Omatsu; Keiyu Ou; Yasunori Yonekuta; Naoya Hatakeyama; Daisuke Asakawa; Takashi Yakushiji; Mitsuhiro Fujita; Nanae Muraki
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Novel DDR process and materials for front-edge NTD process
Author(s): Shuhei Shigaki; Satoshi Takeda; Wataru Shibayama; Ryuji Onishi; Makoto Nakajima; Rikimaru Sakamoto
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Fundamental characterization of shrink techniques on negative tone development based dense contact holes
Author(s): Kaveri Jain; Scott L. Light
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Toward sub-20nm pitch Fin patterning and integration with DSA
Author(s): Safak Sayan; Taisir Marzook; BT Chan; Nadia Vandenbroeck; Arjun Singh; David Laidler; Efrain A. Sanchez; Philippe Leray; Paulina R. Delgadillo; Roel Gronheid; Geert Vandenberghe; William Clark; Aurelie Juncker
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Directed self-assembly of PS-b-PMMA with ionic liquid addition
Author(s): Xuanxuan Chen; Takehito Seo; Paulina Rincon-Delgadillo; Tasuku Matsumiya; Akiya Kawaue; Takaya Maehashi; Roel Gronheid; Paul F. Nealey
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An improved method for characterizing photoresist lithographic and defectivity performance for sub-20nm node lithography
Author(s): Gilles Amblard; Sara Purdy; Ryan Cooper; Marjory Hockaday
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CD bias control on hole pattern
Author(s): Kyohei Koike; Arisa Hara; Sakurako Natori; Shohei Yamauchi; Masatoshi Yamato; Kenichi Oyama; Hidetami Yaegashi
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High speed AFM studies of 193 nm immersion photoresists during TMAH development
Author(s): Johnpeter Ngunjiri; Greg Meyers; Jim Cameron; Yasuhiro Suzuki; Hyun Jeon; Dave Lee; Kwang Mo Choi; Jung Woo Kim; Kwang-Hwyi Im; Hae-Jin Lim
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High chi block copolymer DSA to improve pattern quality for FinFET device fabrication
Author(s): HsinYu Tsai; Hiroyuki Miyazoe; Ankit Vora; Teddie Magbitang; Noel Arellano; Chi-Chun Liu; Michael J. Maher; William J. Durand; Simon J. Dawes; James J. Bucchignano; Lynne Gignac; Daniel P. Sanders; Eric A. Joseph; Matthew E. Colburn; C. Grant Willson; Christopher J. Ellison; Michael A. Guillorn
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High chi block copolymers based on chemical modification of poly(t-butyl acrylate) containing block copolymers
Author(s): Sungmin Park; Seongjun Jo; Yonghoon Lee; Chang Y. Ryu; Du Yeol Ryu; Jun Sung Chun
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Design of new block copolymer systems to achieve thick films with defect-free structures for applications of DSA into lithographic large nodes
Author(s): X. Chevalier; P. Coupillaud; G. Lombard; C. Nicolet; J. Beausoleil; G. Fleury; M. Zelsmann; P. Bezard; G. Cunge; J. Berron; K. Sakavuyi; A. Gharbi; R. Tiron; G. Hadziioannou; C. Navarro; I. Cayrefourcq
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Directed self-assembly materials for high resolution beyond PS-b-PMMA
Author(s): Eri Hirahara; Margareta Paunescu; Orest Polishchuk; EunJeong Jeong; Edward Ng; Jianhui Shan; Jian Yin; Jihoon Kim; Yi Cao; Jin Li; SungEun Hong; Durairaj Baskaran; Guanyang Lin
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Formation of microphase-separated structure with half pitch less than 5.0nm formed by multiblock copolymers for nanolithographic application
Author(s): T. Kosaka; Y. Kawaguchi; T. Himi; T. Shimizu; K. Hirahara; A. Takano; Y. Matsushita
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Novel pattern trimming and shrink material (PTM (PTD) and PSM (NTI)) for ArF/EUV extension
Author(s): Tokio Nishita; Rikimaru Sakamoto
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Evaluation of water based intelligent fluids for resist stripping in single wafer cleaning tools
Author(s): Matthias Rudolph; Silvio Esche; Christoph Hohle; Dirk Schumann; Philipp Steinke; Xaver Thrun; Justus von Sonntag
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Novel ArF extension technique by applying Dry Development Rinse Process (DDRP) and Materials (DDRM)
Author(s): Wataru Shibayama; Shuhei Shigaki; Satoshi Takeda; Ryuji Onishi; Makoto Nakajima; Rikimaru Sakamoto
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Additive chemistry and distributions in NTD photoresist thin films
Author(s): James Thackeray; Chang-Young Hong; Michael B. Clark
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PVD prepared molecular glass resists for scanning probe lithography
Author(s): Christian Neuber; Hans-Werner Schmidt; Peter Strohriegl; Daniel Wagner; Felix Krohn; Andreas Schedl; Simon Bonanni; Felix Holzner; Colin Rawlings; Urs Dürig; Armin W. Knoll
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Directed self-assembly of diblock copolymers in multi-VIA configurations: effect of chemopatterned substrates on defectivity
Author(s): Corinne L. Carpenter; Kris T. Delaney; Glenn H. Fredrickson
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Surface affinity role in graphoepitaxy of lamellar block copolymers
Author(s): G. Claveau; P. Quemere; M. Argoud; J. Hazart; P. Pimenta Barros; A. Sarrazin; N. Posseme; R. Tiron; X. Chevalier; C. Nicolet; C. Navarro
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Influence of template fill in graphoepitaxy DSA
Author(s): Jan Doise; Joost Bekaert; Boon Teik Chan; SungEun Hong; Guanyang Lin; Roel Gronheid
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Planarization of topography with spin-on carbon hard mask
Author(s): Go Noya; Yusuke Hama; Maki Ishii; Shigemasa Nakasugi; Takanori Kudo; Munirathna Padmanaban
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Optics-free lithography on colloidal nanocrystal assemblies
Author(s): Santosh Shaw; Kyle J. Miller; Julien L. Colaux; Ludovico Cademartiri
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Development of heat resistant polyphenol compounds applied to the spin-on carbon hardmask
Author(s): Takashi Makinoshima; Takashi Satou; Junya Horiuchi; Kana Okada; Yoko Shimizu; Masatoshi Echigo
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Enhancing the Novolak resin resist resolution by adding phenol to fractionated resin
Author(s): Atsushi Sekiguchi; Yoko Matsumoto; Hatsuyuki Tanaka; Toshiyuki Horiuchi; Yoshihisa Sensu; Satoshi Takei; Makoto Hanabata
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Spin-on metal oxide materials with high etch selectivity and wet strippability
Author(s): Huirong Yao; Salem Mullen; Elizabeth Wolfer; Douglas McKenzie; Dalil Rahman; JoonYeon Cho; Munirathna Padmanaban; Claire Petermann; SungEun Hong; YoungJun Her
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Metal reduction at point-of-use filtration
Author(s): Toru Umeda; Shusaku Daikoku; Rao Varanasi; Shuichi Tsuzuki
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Integrating nanosphere lithography in device fabrication
Author(s): Tod V. Laurvick; Ronald A. Coutu; Robert A. Lake
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Analyzing block placement errors in SADP patterning
Author(s): Shinji Kobayashi; Soichiro Okada; Satoru Shimura; Kathleen Nafus; Carlos Fonseca; Marc Demand; Serge Biesemans; Janko Versluijs; Monique Ercken; Philippe Foubert; Shinobu Miyazaki
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Considerations for fine hole patterning for the 7nm node
Author(s): Hidetami Yaegashi; Kenichi Oyama; Arisa Hara; Sakurako Natori; Shohei Yamauchi; Masatoshi Yamato; Kyohei Koike
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Chemical trimming overcoat: an enhancing composition and process for 193nm lithography
Author(s): Cong Liu; Kevin Rowell; Lori Joesten; Paul Baranowski; Irvinder Kaur; Wanyi Huang; JoAnne Leonard; Hae-Mi Jeong; Kwang-Hwyi Im; Tom Estelle; Charlotte Cutler; Gerd Pohlers; Wenyan Yin; Patricia Fallon; Mingqi Li; Hyun Jeon; Cheng Bai Xu; Pete Trefonas
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Novel neutral under layer materials to enhance the photolithography performance and defectivity for chemo-epitaxy process
Author(s): Ryuta Mizuochi; Hiroyuki Wakayama; Yasunobu Someya; Rikimaru Sakamoto
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Phase field mapping for accurate, ultrafast simulations of directed self-assembly
Author(s): Jimmy Liu; Kris T. Delaney; Glenn H. Fredrickson
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Filtration on block copolymer solution used in directed self assembly lithography
Author(s): Toru Umeda; Tomoyuki Takakura; Shuichi Tsuzuki
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Contrast enhanced diffusion NMR: quantifying impurities in block copolymers for DSA
Author(s): Rudy Wojtecki; Ellie Porath; Ankit Vora; Alshakim Nelson; Daniel Sanders
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mr-PosEBR: a novel positive tone resist for high resolution electron beam lithography and 3D surface patterning
Author(s): Stefan Pfirrmann; Robert Kirchner; Olga Lohse; Vitaliy A. Guzenko; Anja Voigt; Irina Harder; Anett Kolander; Helmut Schift; Gabi Grützner
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Spin-on-carbon hard masks utilising fullerene derivatives
Author(s): Alan G. Brown; Andreas Frommhold; Tom Lada; J. Bowen; Z. el Otell; Alex P. G. Robinson
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Helium ion beam lithography (HIBL) using HafSOx as the resist
Author(s): Feixiang Luo; Viacheslav Manichev; Mengjun Li; Gavin Mitchson; Boris Yakshinskiy; Torgny Gustafsson; David Johnson; Eric Garfunkel
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EB and EUV lithography using inedible cellulose-based biomass resist material
Author(s): Satoshi Takei; Makoto Hanabata; Akihiro Oshima; Miki Kashiwakura; Takahiro Kozawa; Seiichi Tagawa
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New resist materials based on polyacetal main chain scission
Author(s): Theodoros Manouras; Antonis Olziersky; Panagiotis Argitis
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A physical resist shrinkage model for full-chip lithography simulations
Author(s): Peng Liu; Leiwu Zheng; Maggie Ma; Qian Zhao; Yongfa Fan; Qiang Zhang; Mu Feng; Xin Guo; Tom Wallow; Keith Gronlund; Ronald Goossens; Gary Zhang; Yenwen Lu
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