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PROCEEDINGS VOLUME 9768

Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX
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Volume Details

Volume Number: 9768
Date Published: 24 June 2016
Softcover: 29 papers (254) pages
ISBN: 9781510600034

Table of Contents
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Front Matter: Volume 9768
Author(s): Proceedings of SPIE
Estimation of free carrier concentrations in high-quality heavily doped GaN:Si micro-rods by photoluminescence and Raman spectroscopy
Author(s): M. S. Mohajerani; S. Khachadorian; C. Nenstiel; T. Schimpke; A. Avramescu; M. Strassburg; A. Hoffmann; A. Waag
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Single-crystal phosphors for high-brightness white LEDs/LDs
Author(s): Encarnación G. Víllora; Stelian Arjoca; Daisuke Inomata; Kiyoshi Shimamura
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Investigation of light output uniformity and performance using a UV transmitting glass optic for a multi-UV LED array
Author(s): Brian Jasenak; Rachel Willsey; Adam Willsey; James Forish
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Light-emitting diodes for solid-state lighting: searching room for improvements
Author(s): Sergey Yu. Karpov
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Thermal droop in InGaN-based LEDs: physical origin and dependence on material properties
Author(s): C. De Santi; M. Meneghini; M. La Grassa; N. Trivellin; B. Galler; R. Zeisel; B. Hahn; M. Goano; S. Dominici; M. Mandurrino; F. Bertazzi; G. Meneghesso; E. Zanoni
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Emission characteristics of light-emitting diodes by confocal microscopy
Author(s): W. S. Cheung; H. W. Choi
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Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs
Author(s): Modestas Zulonas; Ilya E. Titkov; Amit Yadav; Ksenia A. Fedorova; Andrei F. Tsatsulnikov; Wsevolod V. Lundin; Alexey V. Sakharov; Thomas Slight; Wyn Meredith; Edik U. Rafailov
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Blue resonant-cavity light-emitting diode with half milliwatt output power
Author(s): Pinghui S. Yeh; Chi-Chieh Chang; Yu-Ting Chen; Da-Wei Lin; Chun Chia Wu; Jhao Hang He; Hao-Chung Kuo
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Fabrication and characterization of broadband superluminescent diodes for 2 µm wavelength
Author(s): Nouman Zia; Jukka Viheriälä; Riku Koskinen; Mervi Koskinen; Soile Suomalainen; Mircea Guina
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Position-controlled MOVPE growth and electro-optical characterization of core-shell InGaN/GaN microrod LEDs
Author(s): Tilman Schimpke; H.-J. Lugauer; A. Avramescu; T. Varghese; A. Koller; J. Hartmann; J. Ledig; A. Waag; M. Strassburg
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Progress and challenges in GaN-on-Si LEDs
Author(s): William Fenwick
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Monolithic LED arrays, next generation smart lighting sources
Author(s): Alexandre Lagrange; Hubert Bono; François Templier
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High-brightness low-power consumption microLED arrays
Author(s): James R. Bonar; Gareth J. Valentine; Zheng Gong; James Small; Steve Gorton
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Advances in LEDs for automotive applications
Author(s): Jy Bhardwaj; Rao Peddada; Benno Spinger
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3D structural construction of GaN-based light-emitting diode by confocal micro-Raman spectroscopy
Author(s): Heng Li; Chiao-Yun Chang; Hui-Yu Cheng; Wei-Liang Chen; Yi-Hsin Huang; Tien-Chang Lu; Yu-Ming Chang
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Progress in characterizing the multidimensional color quality properties of white LED light sources
Author(s): Kees Teunissen; Christoph Hoelen
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Adaptive multi-wavelength LED star simulator for space life studies
Author(s): Nicola Trivellin; Diego Barbisan; Marco Ferretti; Marco S. Erculiani; Riccardo U. Claudi; Enrico Giro; Matteo Bonato; Lorenzo Cocola; Luca Poletto; Bernardo Salasnich; Matteo Meneghini; Gaudenzio Meneghesso; Enrico Zanoni
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Process control of MOCVD growth for LEDs by in-situ photoluminescence
Author(s): C. Prall; C. Prall; C. Kaspari; M. Weyers; D. Rueter; F. Brunner; K. Haberland; C. Kaspari; F. Brunner; M. Weyers; D. Rueter
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Significant improvement of GaN crystal quality with ex-situ sputtered AlN nucleation layers
Author(s): Shuo-Wei Chen; Young Yang; Wei-Chih Wen; Heng Li; Tien-Chang Lu
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Development of semipolar (11-22) LEDs on GaN templates
Author(s): B. Corbett; Z. Quan; D. V. Dinh; G. Kozlowski; D. O'Mahony; M. Akhter; S. Schulz; P. Parbrook; P. Maaskant; M. Caliebe; M. Hocker; K. Thonke; F. Scholz; M. Pristovsek; Y. Han; C. J. Humphreys; F. Brunner; M. Weyers; T. M. Meyer; L. Lymperakis
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Room temperature green to red electroluminescence from (Al,Ga)As/GaP QDs and QWs
Author(s): Christian Golz; Shabnam Dadgostar; W. Ted Masselink; Fariba Hatami
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Red InGaP light-emitting diodes epitaxially grown on engineered Ge-on-Si substrates
Author(s): Bing Wang; Cong Wang; Kwang Hong Lee; Shuyu Bao; Kenneth Eng Kian Lee; Chuan Seng Tan; Soon Fatt Yoon; Eugene A. Fitzgerald; Jurgen Michel
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AlGaInP red-emitting light emitting diode under extremely high pulsed pumping
Author(s): Amit Yadav; Ilya E. Titkov; Grigorii S. Sokolovskii; Sergey Yu. Karpov; Vladislav V. Dudelev; Ksenya K. Soboleva; Martin Strassburg; Ines Pietzonka; Hans-Juergen Lugauer; Edik U. Rafailov
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Design and implementation of a deception jamming system for laser receivers
Author(s): Ahmed Sami Bahgat; Ashraf F. El-Sherif; Yaser H. El-Sharkawy
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Do we need to recalibrate our strategy in InGaN-on-SiC LED technology given its low efficiency?
Author(s): V. K. Malyutenko; O. Yu. Malyutenko
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Epitaxial growth and photoluminescence properties of β-FeSi2 grains using liquid phase obtained by Au-Si eutectic reaction
Author(s): Kensuke Akiyama; Hiroshi Funakubo
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Modeling of novel hybrid photonic crystal structures involving cured hydrogen silsesquioxane pillars for improving the light extraction in light-emitting diodes
Author(s): Anand Kadiyala; Jeremy M. Dawson
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LED light engine concept with ultra-high scalable luminance
Author(s): Christoph Hoelen; Dick de Boer; Dominique Bruls; Joost van der Eyden; Rolf Koole; Yun Li; Mo Mirsadeghi; Vincent Vanbroekhoven; John-John Van den Bergh; Patrick Van de Voorde
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Aging behavior, reliability, and failure physics of GaN-based optoelectronic components
Author(s): Enrico Zanoni; Matteo Meneghini; Gaudenzio Meneghesso; Carlo De Santi; Marco La Grassa; Matteo Buffolo; Nicola Trivellin; Desiree Monti
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