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PROCEEDINGS VOLUME 9748

Gallium Nitride Materials and Devices XI
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Softcover $105.00 $140.00

Volume Details

Volume Number: 9748
Date Published: 21 July 2016
Softcover: 30 papers (278) pages
ISBN: 9781628419832

Table of Contents
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Front Matter: Volume 9748
Author(s): Proceedings of SPIE
Heteroepitaxial growth of cubic boron nitride films on diamond(001) substrates and their n-type doping
Author(s): Hong Yin
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HVPE-GaN growth on GaN-based Advanced Aubstrates by Smart Cut
Author(s): Malgorzata Iwinska; Mikolaj Amilusik; Michal Fijalkowski; Tomasz Sochacki; Boleslaw Lucznik; Ewa Grzanka; Elzbieta Litwin-Staszewska; Anna Nowakowska-Siwinska; Izabella Grzegory; Eric Guiot; Raphael Caulmilone; Martin Seiss; Tobias Mrotzek; Michal Bockowski
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Optical and crystal quality improvement in green emitting InxGa1-xN multi-quantum wells through optimization of MOCVD growth
Author(s): Erkan A. Berkman; Soo Min Lee; Frank Ramos; Eric Tucker; Ronald A. Arif; Eric A. Armour; George D. Papasouliotis
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Quantum well intermixing and radiation effects in InGaN/GaN multi quantum wells
Author(s): K. Lorenz; A. Redondo-Cubero; M. B. Lourenço; M. C. Sequeira; M. Peres; A. Freitas; L. C. Alves; E. Alves; M. P. Leitão; J. Rodrigues; N. Ben Sedrine; M. R. Correia; T. Monteiro
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New directions in GaN photonics
Author(s): Ge Yuan; Cheng Zhang; Kanglin Xiong; Sunghyun Park; Jung Han
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Analysis of radiative and non-radiative lifetimes in GaN using accurate internal-quantum-efficiency values estimated by simultaneous photoluminescence and photo-acoustic measurements
Author(s): K. Kawakami; T. Nakano; A. A. Yamaguchi
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Approaches to highly efficient UV emitters based on AlGaN quantum wells
Author(s): Shuhei Ichikawa; Mitsuru Funato; Yoichi Kawakami
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Influence of vacancies on GaN/AlN interface characteristics
Author(s): Yahor V. Lebiadok; Tatyana V. Bezyazychnaya; Dzmitri M. Kabanau; Gennadii I. Ryabtsev; Konstantin S. Zhuravlev
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Interface control technologies for high-power GaN transistors: Self-stopping etching of p-GaN layers utilizing electrochemical reactions
Author(s): Taketomo Sato; Yusuke Kumazaki; Masaaki Edamoto; Masamichi Akazawa; Tamotsu Hashizume
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Monolithic enhancement-mode and depletion-mode GaN-based MOSHEMTs
Author(s): Ching-Ting Lee; Jhe-Hao Chang; Chun-Yen Tseng
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Development for ultraviolet vertical cavity surface emitting lasers
Author(s): Yuh-Shiuan Liu; Tsung-Ting Kao; Karan Mehta; Shyh-Chiang Shen; P. Douglas Yoder; Theeradetch Detchprohm; Russell D. Dupuis; Hongen Xie; Fernando A. Ponce
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Continuous wave operation of high power GaN-based blue vertical-cavity surface-emitting lasers using epitaxial lateral overgrowth
Author(s): Tatsushi Hamaguchi; Noriyuki Fuutagawa; Shouichiro Izumi; Masahiro Murayama; Hironobu Narui
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Optical-loss suppressed InGaN laser diodes using undoped thick waveguide structure
Author(s): Masao Kawaguchi; Osamu Imafuji; Shinichiro Nozaki; Hiroyuki Hagino; Shinichi Takigawa; Takuma Katayama; Tsuyoshi Tanaka
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AlGaInN laser diode technology for systems applications
Author(s): S. P. Najda; P. Perlin; T. Suski; L. Marona; M. Bockowski; M. Leszczyński; P. Wisniewski; R. Czernecki; R. Kucharski; G. Targowski; S. Watson; A. E. Kelly
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InGaN/GaN DFB laser diodes at 434 nm with deeply etched sidewall gratings
Author(s): Thomas J. Slight; Opeoluwa Odedina; Wyn Meredith; Kevin E. Docherty; Anthony E. Kelly
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Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts
Author(s): J. T. Leonard; E. C. Young; B. P. Yonkee; D. A. Cohen; C. Shen; T. Margalith; T. K. Ng; S. P. DenBaars; B. S. Ooi; J. S. Speck; S. Nakamura
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Linearly polarized single photons from small site-controlled GaN nanowire quantum dots
Author(s): Mark J. Holmes; Satoshi Kako; Kihyun Choi; Munetaka Arita; Yasuhiko Arakawa
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Strain engineered high reflectivity DBRs in the deep UV
Author(s): A. Franke; M. P. Hoffmann; L. Hernandez-Balderrama; F. Kaess; I. Bryan; S. Washiyama; M. Bobea; J. Tweedie; R. Kirste; M. Gerhold; R. Collazo; Z. Sitar
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Deep ultraviolet light-emitting and laser diodes
Author(s): Asif Khan; Fatima Asif; Sakib Muhtadi
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Influence of the LED heterostructure on the degradation behavior of (InAlGa)N-based UV-B LEDs
Author(s): Johannes Glaab; Neysha Lobo Ploch; Jens Rass; Tim Kolbe; Tim Wernicke; Frank Mehnke; Christian Kuhn; Johannes Enslin; Christoph Stölmacker; Viola Kueller; Arne Knauer; Sven Einfeldt; Markus Weyers; Michael Kneissl
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Tunable, full-color nanowire light emitting diode arrays monolithically integrated on Si and sapphire
Author(s): Renjie Wang; Yong-Ho Ra; Yuanpeng Wu; Songrui Zhao; Hieu P. T. Nguyen; Ishiang Shih; Zetian Mi
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High-efficiency blue LEDs with thin AlGaN interlayers in InGaN/GaN MQWs grown on Si (111) substrates
Author(s): Shigeya Kimura; Hisashi Yoshida; Toshihide Ito; Aoi Okada; Kenjiro Uesugi; Shinya Nunoue
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GaN-based superluminescent diodes with long lifetime
Author(s): A. Castiglia; M. Rossetti; N. Matuschek; R. Rezzonico; M. Duelk; C. Vélez; J-F. Carlin; N. Grandjean
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Determination of internal quantum efficiency in GaN by simultaneous measurements of photoluminescence and photo-acoustic signals
Author(s): T. Nakano; K. Kawakami; A. A. Yamaguchi
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Designing optically pumped InGaN quantum wells with long wavelength emission for a phosphor-free device with polarized white-light emission
Author(s): Stacy J. Kowsz; Christopher D. Pynn; Feng Wu; Robert M. Farrell; James S. Speck; Steven P. DenBaars; Shuji Nakamura
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Hierarchical growth of GaN nanowires for light emitting diode applications
Author(s): Rishabh Raj; Yong-Ho Ra; Cheul-Ro Lee; Sonika Obheroi; R. Navamathavan
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Enhancement of indium incorporation to InGaN MQWs on AlN/GaN periodic multilayers
Author(s): Morteza Monavarian; Shopan Hafiz; Saikat Das; Natalia Izyumskaya; Ümit Özgür; Hadis Morkoç; Vitaliy Avrutin
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Exciton localization in (11-22)-oriented semi-polar InGaN multiple quantum wells
Author(s): Morteza Monavarian; Daniel Rosales; Bernard Gil; Natalia Izyumskaya; Saikat Das; Ümit Özgür; Hadis Morkoç; Vitaliy Avrutin
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Wurtzite/zinc-blende electronic-band alignment in basal-plane stacking faults in semi-polar GaN
Author(s): Morteza Monavarian; Shopan Hafiz; Natalia Izyumskaya; Saikat Das; Ümit Özgür; Hadis Morkoç; Vitaliy Avrutin
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Optical investigation of microscopic defect distribution in semi-polar (1-101 and 11-22) InGaN light-emitting diodes
Author(s): Shopan Hafiz; Nicolas Andrade; Morteza Monavarian; Natalia Izyumskaya; Saikat Das; Fan Zhang; Vitaliy Avrutin; Hadis Morkoç; Ümit Özgür
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