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Proceedings of SPIE Volume 9635

Photomask Technology 2015
Editor(s): Naoya Hayashi
Format Member Price Non-Member Price
Softcover $97.50 $130.00

Volume Details

Volume Number: 9635
Date Published: 24 November 2015
Softcover: 0 papers () pages
ISBN: 9781628418453

Table of Contents
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Front Matter: Volume 9635
Author(s): Proceedings of SPIE
Lithography and mask challenges at the leading edge
Author(s): Harry J. Levinson
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EUV High-NA scanner and mask optimization for sub 8 nm resolution
Author(s): Jan van Schoot; Koen van Ingen Schenau; Gerardo Bottiglieri; Kars Troost; John Zimmerman; Sascha Migura; Bernhard Kneer; Jens Timo Neumann; Winfried Kaiser
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Characterization and mitigation of relative edge placement errors (rEPE) in full-chip computational lithography
Author(s): John Sturtevant; Rachit Gupta; Shumay Shang; Vlad Liubich; James Word
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Accurate mask registration on tilted lines for 6F2 DRAM manufacturing
Author(s): K. D. Roeth; W. Choi; Y. Lee; S. Kim; D. Yim; F. Laske; M. Ferber; M. Daneshpanah; E. Kwon
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Higher order feed-forward control of reticle writing error fingerprints
Author(s): Richard van Haren; Hakki Ergun Cekli; Jan Beltman; Anne Pastol; Frank Sundermann; Maxime Gatefait
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Exploring the origin of charging-induced pattern positioning errors in mask making using e-beam lithography
Author(s): Chien-Cheng Chen; Tzu-Ling Liu; Shao-Wen Chang; Yen-Cheng Ho; Chia-Jen Chen; Chih-Cheng Lin; Ta-Cheng Lien; Hsin-Chang Lee; Anthony Yen
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EUV mask infrastructure readiness and gaps for TD and HVM
Author(s): Ted Liang; John Magana; Kishore Chakravorty; Eric Panning; Guojing Zhang
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Fabrication of a full-size EUV pellicle based on silicon nitride
Author(s): Dario L. Goldfarb
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Detection capability enhancement with a learning system for PEM mask inspection tool
Author(s): Ryoichi Hirano; Masahiro Hatakeyama; Kenji Terao; Hidehiro Watanabe
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Film loss-free cleaning chemicals for EUV mask lifetime elongation developed through combinatorial chemical screening
Author(s): Jaehyuck Choi; Jinsu Kim; Jeff Lowe; Davide Dattilo; Soowan Koh; Jun Yeol Choi; Uwe Dietze; Tsutomu Shoki; Byung Gook Kim; Chan-Uk Jeon
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The study of phase effects in EUV mask pattern defects
Author(s): Yow-Gwo Wang; Andy Neureuther; Patrick Naulleau
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ILP-based co-optimization of cut mask layout, dummy fill, and timing for sub-14nm BEOL technology
Author(s): Kwangsoo Han; Andrew B. Kahng; Hyein Lee; Lutong Wang
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Examination of phase retrieval algorithms for patterned EUV mask metrology
Author(s): Rene A. Claus; Yow-Gwo Wang; Antoine Wojdyla; Markus P. Benk; Kenneth A. Goldberg; Andrew R. Neureuther; Patrick P. Naulleau
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Absorber topography dependence of phase edge effects
Author(s): Aamod Shanker; Martin Sczyrba; Brid Connolly; Laura Waller; Andy Neureuther
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Imaging enhancement by reduction of mask topography induced phase aberrations for horizontal 1D spaces under D90Y illumination
Author(s): T. Last; L. de Winter; J. Finders
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EUV photomask defects: what prints, what doesn't, and what is required for HVM
Author(s): Jed Rankin; Zhengqing John Qi; Mark Lawliss; Eisuke Narita; Kazunori Seki; Karen Badger; Ravi Bonam; Scott Halle; Christina Turley
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New method of detection and classification of yield-impacting EUV mask defects
Author(s): Ioana Graur; Dmitry Vengertsev; Ananthan Raghunathan; Ian Stobert; Jed Rankin
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Viability of pattern shift for defect-free EUV photomasks at the 7nm node
Author(s): Zhengqing John Qi; Jed Rankin; Eisuke Narita; Masayuki Kagawa
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Nanoimprint system development and status for high-volume semiconductor manufacturing
Author(s): Kazunori Iwamoto; Takehiko Iwanaga; S. V. Sreenivasan; Junji Iwasa
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DUV inspection tool application for beyond optical resolution limit pattern
Author(s): Hiromu Inoue; Nobutaka Kikuiri; Hideo Tsuchiya; Riki Ogawa; Ikunao Isomura; Takashi Hirano; Ryoji Yoshikawa
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Optical simulations for fractional fluorine terminated coatings on nanoimprint lithography masks
Author(s): Thomas E. Seidel; Alexander Goldberg; Mathew D. Halls
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Mask process matching using a model based data preparation solution
Author(s): Brian Dillon; Mohamed Saib; Thiago Figueiro; Paolo Petroni; Chris Progler; Patrick Schiavone
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A fully model-based MPC solution including VSB shot dose assignment and shape correction
Author(s): Ingo Bork; Peter Buck; Murali Reddy; Bhardwaj Durvasula
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MPC model validation using reverse analysis method
Author(s): Sukho Lee; So-Eun Shin; Jungwook Shon; Jisoong Park; Inkyun Shin; Chan-Uk Jeon
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Accurate mask model implementation in OPC model for 14nm nodes and beyond
Author(s): Nacer Zine El Abidine; Frank Sundermann; Emek Yesilada; Vincent Farys; Frederic Huguennet; Ana-Maria Armeanu; Ingo Bork; Michael Chomat; Peter Buck; Isabelle Schanen
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Properties and performance of EUVL pellicle membranes
Author(s): Emily E. Gallagher; Johannes Vanpaemel; Ivan Pollentier; Houman Zahedmanesh; Christoph Adelmann; Cedric Huyghebaert; Rik Jonckheere; Jae Uk Lee
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Pattern inspection of etched multilayer EUV mask
Author(s): Susumu Iida; Ryoichi Hirano; Tsuyoshi Amano; Hidehiro Watanabe
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Experimental validation of novel mask technology to reduce mask 3D effects
Author(s): Lieve Van Look; Vicky Philipsen; Eric Hendrickx; Natalia Davydova; Friso Wittebrood; Robert de Kruif; Anton van Oosten; Junji Miyazaki; Timon Fliervoet; Jan van Schoot; Jens Timo Neumann
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From nightmares to sweet dreams: inspection of aggressive OPC on 14nm reticles (and beyond) using a novel high-NA and low-NA dual method
Author(s): Karen D. Badger; Michael Hibbs; Kazunori Seki; William Broadbent; Trent Hutchinson; Vincent Redding
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Accurate defect die placement and nuisance defect reduction for reticle die-to-die inspections
Author(s): Vincent Wen; L. R. Huang; C. J. Lin; Y. N. Tseng; W. H. Huang; Laurent C. Tuo; Mark Wylie; Ellison Chen; Elvik Wang; Joshua Glasser; Amrish Kelkar; David Wu
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Variations in programmed phase defect size and its impact on defect detection signal intensity using at-wavelength inspection system
Author(s): Tsuyoshi Amano; Noriaki Takagi; Tsukasa Abe
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EUV actinic brightfield mask microscopy for predicting printed defect images
Author(s): Kenneth Goldberg; Markus P. Benk; Antoine Wojdyla; Erik Verduijn; Obert R. Wood; Pawitter Mangat
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Sensitivity analysis for high accuracy proximity effect correction
Author(s): Xaver Thrun; Clyde Browning; Kang-Hoon Choi; Thiago Figueiro; Christoph Hohle; Mohamed Saib; Patrick Schiavone; Johann W. Bartha
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Photomask etch system and process for 10nm technology node and beyond
Author(s): Madhavi Chandrachood; Michael Grimbergen; Keven Yu; Toi Leung; Jeffrey Tran; Jeff Chen; Darin Bivens; Rao Yalamanchili; Richard Wistrom; Tom Faure; Peter Bartlau; Shaun Crawford; Yoshifumi Sakamoto
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High-durability phase-shift film with variable transmittance
Author(s): Osamu Nozawa; Hiroaki Shishido; Takenori Kajiwara
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Evaluation of multilayer defect repair viability and protection techniques for EUV masks
Author(s): Takeshi Isogawa; Kazunori Seki; Mark Lawliss; Zhengqing John Qi; Jed Rankin; Shinji Akima
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Key indexes of the effectiveness of mask surface treatments
Author(s): Chen-Yang Lin; Chung-Hsuan Liu; Kuan-Wen Lin; Chi-Lun Lu; Luke Hsu; Angus Chin; Anthony Yen
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Automatic defect review for EUV photomask reticles by atomic force microscope
Author(s): Ardavan Zandiatashbar; Byong Kim; Young-kook Yoo; Keibock Lee; Ahjin Jo; Ju Suk Lee; Sang-Joon Cho; Sang-il Park
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Ruthenium capping layer preservation for 100X clean through pH driven effects
Author(s): Davide Dattilo; Uwe Dietze; Jyh-Wei Hsu
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Process capability of etched multilayer EUV mask
Author(s): Kosuke Takai; Noriko Iida nee Sakurai; Takashi Kamo; Yasutaka Morikawa; Naoya Hayashi
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Optical proximity correction for extreme ultra-violet mask with pellicle
Author(s): Soo-Yeon Mo; In-Seon Kim; Hye-Keun Oh
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Mask process simulation for mask quality improvement
Author(s): Nobuyasu Takahashi; So Goto; Dai Tsunoda; So-Eun Shin; Sukho Lee; Jungwook Shon; Jisoong Park
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Rule-based OPC and MPC interaction for implant layers
Author(s): Nan Fu; Guoxiang Ning; Florian Werle; Stefan Roling; Sandra Hecker; Paul Ackmann; Christian Buergel
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Attenuated phase-shift mask (PSM) blanks for flat panel display
Author(s): Kagehiro Kageyama; Satoru Mochizuki; Hiroyuki Yamakawa; Shigeru Uchida
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Advanced repair solution of clear defects on HTPSM by using nanomachining tool
Author(s): Hyemi Lee; Munsik Kim; Hoyong Jung; Sangpyo Kim; Donggyu Yim
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Exposure characterizations of polymer type electron beam resists with various molecular weights for next-generation photomask
Author(s): Tomohiro Takayama; Hironori Asada; Yukiko Kishimura; Ryoichi Hoshino; Atsushi Kawata
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New grade of 9-inch size mask blanks for 450mm wafer process (2015)
Author(s): Noriyuki Harashima; Hiroyuki Iso; Tatsuya Chishima
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Printability evaluation of programmed defects on OMOG masks
Author(s): Irene Shi; Eric Guo; Max Lu; Catherine Ren; Bojan Yan; Rivan Li; Eric Tian
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Investigation of scum type growing defects on attenuated PSM and its prevention
Author(s): Jihwan Choi; Yongho Kim; Dongwook Lee; Hoyong Jung; Snagpyo Kim; Donggyu Yim
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In die mask overlay control for 14nm double-patterning lithography
Author(s): William Chou; James Cheng; Alex C. P. Tseng; J. K. Wu; Chin Kuei Chang; Jeffrey Cheng; Adder Lee; Chain Ting Huang; N. T. Peng; Simon C. C. Hsu; Chun Chi Yu; Colbert Lu; Julia Yu; Peter Craig; Chuck Pollock; Young Ham; Jeff McMurran
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Reduction of in-lot overlay variation with integrated metrology, and a holistic control strategy
Author(s): Hong-Goo Lee; Sang-Jun Han; Won-Kwang Ma; Young-Sik Kim; Noh-Jung Kwak; Paul Böcker; David Deckers; Weitian Kou; Michiel Kupers; Kevin Ryan; Elliott McNamara; Gwang-Gon Kim; Kyu-Tae Sun; Young-Wan Lim; Jin-Moo Byun; Jung-Joon Suh
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Novel CD control of HTPSM by advanced process for sub-20nm tech
Author(s): Sangjin Jo; Chungseon Choi; Sunghyun Oh; Taejoong Ha; Youngmo Lee; Sangpyo Kim; Donggyu Yim
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A study of reticle CD behavior for inter-area pattern loading difference
Author(s): Sungjin Kim; Kweonjae Lee; Jongsuk Yim; Hyunjoong Kim; Sukwhan Kim; Sukho Shin; Woosun Choi; Jinhee Jung; Kyungwha Chun; Inja Lee; Jooyoung Lee; Hyeongsun Hong; Gyoyoung Jin
Wafer weak point detection based on aerial images or WLCD
Author(s): Guoxiang Ning; Peter Philipp; Lloyd C. Litt; Paul Ackmann; Christian Crell; Norman Chen
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Automatic classification and defect verification based on inspection technology with lithography simulation
Author(s): Masaya Kato; Hideki Inuzuka; Takeshi Kosuge; Shingo Yoshikawa; Kayoko Kanno; Hidemichi Imai; Hiroyuki Miyashita; Anthony Vacca; Peter Fiekowsky; Dan Fiekowsky
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The capability of lithography simulation based on MVM-SEM system
Author(s): Shingo Yoshikawa; Nobuaki Fujii; Koichi Kanno; Hidemichi Imai; Katsuya Hayano; Hiroyuki Miyashita; Soichi Shida; Tsutomu Murakawa; Masayuki Kuribara; Jun Matsumoto; Takayuki Nakamura; Shohei Matsushita; Daisuke Hara; Linyong Pang
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A study on the factors that affect the advanced mask defect verification
Author(s): Sungha Woo; Heeyeon Jang; Youngmo Lee; Sangpyo Kim; Donggyu Yim
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Contour-based two-dimension mask pattern metrology
Author(s): Mingjing Tian; Jianwei Wang; Hideaki Bandoh; Eric Guo; Max Lu
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Improvement in accuracy of defect size measurement by automatic defect classification
Author(s): Bhamidipati Samir; Mark Pereira; Sankaranarayanan Paninjath; Chan-Uk Jeon; Dong-Hoon Chung; Gi-Sung Yoon; Hong-Yul Jung
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Model-based multiple patterning layout decomposition
Author(s): Daifeng Guo; Haitong Tian; Yuelin Du; Martin D. F. Wong
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Actinic review of EUV masks: status and recent results of the AIMS EUV system
Author(s): Sascha Perlitz; Jan Hendrik Peters; Markus Weiss; Dirk Hellweg; Renzo Capelli; Krister Magnusson; Matt Malloy; Stefan Wurm
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Phase imaging results of phase defect using micro coherent EUV scatterometry microscope
Author(s): Tetsuo Harada; Hiraku Hashimoto; Tsuyoshi Amano; Hiroo Kinoshita; Takeo Watanabe
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Photomask repair using low-energetic electrons
Author(s): K. Edinger; K. Wolff; P. Spies; T. Luchs; H. Schneider; N. Auth; Ch. F. Hermanns; M. Waiblinger
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