Proceedings Volume 9571

Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems

cover
Proceedings Volume 9571

Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems

Purchase the printed version of this volume at proceedings.com or access the digital version at SPIE Digital Library.

Volume Details

Date Published: 8 October 2015
Contents: 8 Sessions, 22 Papers, 0 Presentations
Conference: SPIE Optical Engineering + Applications 2015
Volume Number: 9571

Table of Contents

icon_mobile_dropdown

Table of Contents

All links to SPIE Proceedings will open in the SPIE Digital Library. external link icon
View Session icon_mobile_dropdown
  • Front Matter: Volume 9571
  • Lasers and UV LEDS
  • Novel Packaging Methods for SSL
  • Colors and Chromaticity Issues in SSL
  • Applications of LED for SSL
  • Nitride LEDs for SSL I
  • Nitride LEDs for SSL II
  • Poster Session
Front Matter: Volume 9571
icon_mobile_dropdown
Front Matter: Volume 9571
This PDF file contains the front matter associated with SPIE Proceedings Volume 9571 including the Title Page, Copyright information, Table of Contents, Introduction, and Conference Committee listing.
Lasers and UV LEDS
icon_mobile_dropdown
Next-generation glass-base phosphor-converted laser light engine
Jin-Kai Chang, Wei-Chih Cheng, Yung-Peng Chang, et al.
A highly reliable laser light engine (LLE) employing a novel glass-based phosphor-converted layer is experimentally demonstrated. The LLE module consisted of a blue light laser array and a color wheel, which included two glass-based phosphor-converted layers of yellow YAG:Ce and green LuAG:Ce and a micro motor. The blue light laser array was used to excite the color wheel to create yellow and green lights. The combination of the blue, yellow, and green lights produced high-purity white light for use in LLEs. The glass-based LLE exhibited better thermal stability, higher luminous efficiency of 64.7lm/W(YAG:Ce) and 67.2lm/W (LuAG:Ce), and higher purity of 95.4%(YAG:Ce) and 77.4%(LuAG:Ce). This study clearly demonstrates the advantages of adapting novel glass as a phosphor-converted color wheel in LEL modules that provide higher reliability and better performance of laser projectors for use in the next generation LLEs, particularly in the area where the conventional LLEs employing silicone-based phosphor fails to stand for long and strict reliability is highly required.
Standardization of UV LED measurements
G. P. Eppeldauer, T. C. Larason, H. W. Yoon
Traditionally used source spectral-distribution or detector spectral-response based standards cannot be applied for accurate UV LED measurements. Since the CIE standardized rectangular-shape spectral response function for UV measurements cannot be realized with small spectral mismatch when using filtered detectors, the UV measurement errors can be several times ten percent or larger. The UV LEDs produce broadband radiation and both their peaks or spectral bandwidths can change significantly. The detectors used for the measurement of these LEDs also have different spectral bandwidths. In the discussed example, where LEDs with 365 nm peak are applied for fluorescent crack-recognition using liquid penetrant (non-destructive) inspection, the broadband radiometric LED (signal) measurement procedure is standardized. A UV LED irradiance-source was calibrated against an FEL lamp standard to determine its spectral irradiance. The spectral irradiance responsivity of a reference UV meter was also calibrated. The output signal of the reference UV meter was calculated from the spectral irradiance of the UV source and the spectral irradiance responsivity of the reference UV meter. From the output signal, both the integrated irradiance (in the reference plane of the reference meter) and the integrated responsivity of the reference meter were determined. Test UV meters calibrated for integrated responsivity against the reference UV meter, can be used to determine the integrated irradiance from a field UV source. The obtained 5 % (k=2) measurement uncertainty can be decreased when meters with spectral response close to a constant value are selected.
Novel Packaging Methods for SSL
icon_mobile_dropdown
Thermoresponsive scattering coating for smart white LEDs
Hugo J. Cornelissen, Joan Yu, Giovanni Cennini, et al.
A novel responsive lighting system is presented capable of lowering the color temperature of emitted light on dimming. It is based on a single white light emitting LED and a thermo-responsive scattering coating. The coated LED automatically emits light of lower correlated color temperature (CCT) when the power is reduced, while maintaining a chromaticity close to the black body curve. Existing systems all use multiple color LEDs, additional control circuitry and mixing optics. An optical ray tracing model can explain the experimental results.
Colors and Chromaticity Issues in SSL
icon_mobile_dropdown
Köhler integration in color mixing collimators
Köhler integrating lenslet arrays can provide collimated, uniform, and color mixed beams from an array of sources of arbitrary color. The integration can be achieved with two lenslet arrays after collimation, with lenslet arrays embedded into certain collimators or close to the sources before collimation with a double sided lenslet shell. The degree of color mixing of the different approaches can be less than ideal. We have investigated the main mixing degradation mechanisms both in the near and in the far field and quantified them for certain source and architecture combinations. From this analysis we can derive simple design rules for successful color mixing.
A color management system for multi-colored LED lighting
Maumita Chakrabarti, Anders Thorseth, Jørgen Jepsen, et al.
A new color control system is described and implemented for a five-color LED light engine, covering a wide white gamut. The system combines a new way of using pre–calibrated lookup tables and a rule-based optimization of chromaticity distance from the Planckian locus with a calibrated color sensor. The color sensor monitors the chromaticity of the mixed light providing the correction factor for the current driver by using the generated lookup table. The long term stability and accuracy of the system will be experimentally investigated with target tolerance within a circle radius of 0.0013 in the uniform chromaticity diagram (CIE1976).
The stability of spectrum reproduction by LEDs
Hua Yang, Jing Li, Ran Yao, et al.
Spectral power distribution together with color consistency and constancy of natural light is studied and simulated before the white-light LED systems are fabricated to reproduce the natural light. The model with 3, 4, 6 and more primary LEDs based on the real measured spectrum and theoretical spectrum are analyzed. The spectral power sensitivity relation between the LEDs with different wavelength and color characteristic is analyzed. This research simplifies the approach of visible spectrum reconstruction which is an efficient way to use in the design and realization of LED-based luminaire.
Experimental investigation of analog and digital dimming techniques on photometric performance of an indoor Visible Light Communication (VLC) system
Fahad Zafar, Vineetha Kalavally, Masuduzzaman Bakaul, et al.
For making commercial implementation of light emitting diode (LED) based visible light communication (VLC) systems feasible, it is necessary to incorporate it with dimming schemes which will provide energy savings, moods and increase the aesthetic value of the places using this technology. There are two general methods which are used to dim LEDs commonly categorized as analog and digital dimming. Incorporating fast data transmission with these techniques is a key challenge in VLC. In this paper, digital and analog dimming for a 10 Mb/s non return to zero on-off keying (NRZ-OOK) based VLC system is experimentally investigated considering both photometric and communicative parameters. A spectrophotometer was used for photometric analysis and a line of sight (LOS) configuration in the presence of ambient light was used for analyzing communication parameters. Based on the experimental results, it was determined that digital dimming scheme is preferable for use in indoor VLC systems requiring high dimming precision and data transmission at lower brightness levels. On the other hand, analog dimming scheme is a cost effective solution for high speed systems where dimming precision is insignificant.
Applications of LED for SSL
icon_mobile_dropdown
Hybrid freeform TIR optics construction in Cartesian coordinate system: a new composite ray mapping method
Donglin Ma, Zexin Feng, Chengliang Wang, et al.
In this paper, we propose a new composite ray mapping method to design freeform total internal reflective (TIR) optics for LED illumination. We sample the ray intensity distribution into rectangular grids which have the best topological match to those rectangular grids on the target surface. With the multiple-to-one mapping relationships between the source intensity distribution and target irradiance distribution, we can construct the freeform TIR surfaces and freeform refractive surface using Snell’s law. Compared to our previous design using uv-θϕ composite ray mapping method, this design approach is expected to have much less surface error and improve the illumination uniformity further because of the better topological match. In addition, due to the overlapping mechanism by multiple-to-one (composite) ray mapping, the method could lead to a more robust freeform optics compared to traditional freeform optics designs.
Nitride LEDs for SSL I
icon_mobile_dropdown
Carrier-injection studies in GaN-based light-emitting-diodes
Dinh Chuong Nguyen, David Vaufrey, Mathieu Leroux
Although p-type GaN has been achieved by Mg doping, the low hole-mobility still remains a difficulty for GaN-based light-emitting diodes (LEDs). Due to the lack of field-dependent-velocity model for holes, in GaN-based LED simulations, the hole mobility is usually supposed to remain constant. However, as the p-GaN-layer conductivity is lower than the n-GaN-layer conductivity, a strong electric-field exists in the p-side of an LED when the applied voltage exceeds the LED’s built-in voltage. Under the influence of this field, the mobilities of electrons and holes are expected to decrease. Based on a field-dependent-velocity model that is usually used for narrow-bandgap materials, an LED structure is modelled with three arbitrarily chosen hole saturation-velocities. The results show that a hole saturation-velocity lower than 4x106 cm/s can negatively affect the LED’s behaviors.
Effect of barrier materials on the polarization field in the active region of blue InGaN LED using Sentaurus
Karunavani Sarukunaselan, Vithyacharan Retnasamy, Zaliman Sauli, et al.
This paper addresses the barrier material of the structural design of a blue InGaN light emitting diode (LED) in order to analyze the polarization effect occurred in the active region by carrying out a simulation using Sentaurus Synopsys. It was observed that the traditional GaN barrier had the highest polarization field due to high lattice mismatch between the wells and barriers. When InGaN or AlInGaN were employed as barrier, the band diagram showed a lower polarization effect. This was attributed to the overlapping of electrons and holes wave functions.
Quantum well thickness variation investigation on optical and thermal performances of GaN LEDs
Karunavani Sarukunaselan, Vithyacharan Retnasamy, Zaliman Sauli, et al.
Blue InGaN LED suffers from a severe efficiency droop at high current density and electron leakage is believed to be one of the primary causes of it. In this study, InGaN LED was simulated using Sentaurus TCAD. The effects of thickness of the quantum wells on the device performances were examined through simulation. Results of the simulations suggested that to achieve a low efficiency droop, the wells have to be thick.
Nitride LEDs for SSL II
icon_mobile_dropdown
Efficiency improvement of the light-emitting diodes by the lateral overgrowth GaN on an AlN nanorod template
Wen-Yi Lan, Yu-Feng Yin, Chen-Hung Tsai, et al.
With the rapid development of GaN light-emitting diodes (LEDs), LEDs have been utilized in various ways. However, the quality of the GaN epi-structure has been a popular topic. In order to achieve higher internal quantum efficiency (IQE), LEDs have to be made with few defects during the epitaxy growth. Here we propose an AlN nanorod template grown on the sapphire substrate by vapor-liquid-solid (VLS) method. The voids near the AlN nanorods indicate a modification of dislocation with a lateral overgrowth. A strain relaxation and a better IQE in the epi-layer are observed in the Raman spectroscopy and temperature-dependent photoluminescence (PL). As a result, the IQE of the device with the proposed AlN nanorod template is increased 12.2% as compared with the reference sample without AlN nanorods.
Optoelectronic and structural properties of InGaN nanostructures grown by plasma-assisted MOCVD
This paper presents optoelectronic and structural layer properties of InN and InGaN epilayers grown on sapphire templates by Migration-Enhanced Plasma Assisted Metal Organic Chemical Vapor Deposition (MEPA-MOCVD). Real-time characterization techniques have been applied during the growth process to gain insight of the plasma-assisted decomposition of the nitrogen precursor and associated growth surface processes. Analyzed Plasma Emission Spectroscopy (PES) and UV Absorption Spectroscopy (UVAS) provide detection and concentrations of plasma generated active species (N*/NH*/NHx*). Various precursors have been used to assess the nitrogen-active fragments that are directed from the hollow cathode plasma tube to the growth surface. The in-situ diagnostics results are supplemented with ex-situ materials structures investigation results of nanoscale structures using Scanning Near-field Optical Microscopy (SNOM). The structural properties have been analyzed by Raman spectroscopy and Fourier transform infrared (FTIR) reflectance. The Optoelectronic and optical properties were extracted by modeling the FTIR reflectance (e.g. free carrier concentration, high frequency dielectric constant, mobility) and optical absorption spectroscopy. The correlation and comparison between the in-situ metrology results with the ex-situ nano-structural and optoelectronic layer properties provides insides into the growth mechanism on how plasma-activated nitrogen-fragments can be utilized as nitrogen precursor for group III-nitride growth. The here assessed growth process parameter focus on the temporal precursor exposure of the growth surface, the reactor pressure, substrate temperature and their effects of the properties of the InN and InGaN epilayers.
Quantum barrier thickness study on blue InGaN LED optical performance using Sentaurus
Karunavani Sarukunaselan, Vithyacharan Retnasamy, Zaliman Sauli, et al.
Blue InGaN LEDs have a drawback whereby it suffers from efficiency droop at high current injection levels. One of the major factors of this droop behaviour is contributed by electron leakage. The aim of this study was to suppress electron leakage in the device by understanding how barrier thickness affects the carrier distribution in the device as well as the device performances. Simulation results obtained showed that thinner barrier increased the device’s efficiency since there was better electron confinement and tunnelling effect.
Poster Session
icon_mobile_dropdown
High performance near-ultraviolet flip-chip light-emitting diodes with distributed Bragg reflector
Il-Gyun Choi, Geun-Mo Jin, Jun-Cheon Park, et al.
We have fabricated the near-ultraviolet (NUV) flip-chip (FC) light-emitting diodes (LEDs) with the high external quantum efficiency (EQE) using distributed Bragg reflectors (DBRs) and compared with conventional FC-LED using silver (Ag) reflector. Reflectance of Ag is very high (90 ~ 95 %) at visible spectrum region, but sharply decrease at NUV region. Therefore we used DBR composed of two different materials which have high-index contrast, such as TiO2 and SiO2. However, to achieve high-performance NUV flip-chip LEDs, we used Ta2O5 instead of TiO2 that absorbs lights of NUV region. Thus, we have designed a DBR composed of twenty pairs of Ta2O5 and SiO2 using optical coating design software. The DBR designed by our group achieves a reflectance of ~99 % in the NUV region (350 ~ 500 nm), which is much better than Ag reflector. Optical power is higher than the Ag-LED up to 22 % @ 390 nm.
High performance GaN based blue flip-chip light-emitting diodes
G.M. Jin, I.G. Choi, J.C. Park, et al.
In this study, high performance nitride-based flip-chip (FC) light-emitting diodes (LEDs) using optimized distributed bragg reflector (DBR) were fabricated and compared with conventional FC-LED using silver (Ag) reflector. Most of FCLEDs are using the silver (Ag) as reflector due to its superior reflectance at visual spectrum region. However, A silver has detrimental problems such as electro-chemical migration and agglomerations, which resulting in reliability issues such as degradation of power drop, unstable operating voltage and leakage issues. Our DBR structure was designed to have 99% at whole visible spectrum range (400~750nm), which is higher reflectance than silver reflector (90~95%). Optical power is higher than higher than the Ag-LED up to 30% @ 500mA. As the current increases up to 1A, the gap slightly decreased. Reliability test results show stable optical power, operating voltage, and leakage maintenance.
White LED motorcycle headlamp design
The motorcycle headlamp is composed of a white LED module, an elliptical reflector, a parabolic reflector and a toric lens. We use non-sequential ray to improve the optical efficiency of the compound reflectors. Using the toric lens can meet ECE_113 regulation and obtain a good uniformity.
Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes
M. Mandurrino, M. Goano, S. Dominici, et al.
We present results from a combined experimental and numerical investigation of trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes. We show that the excess forward leakage current in single-quantum-well InGaN/GaN light-emitting diodes can be explained by non-local tunneling-into-traps processes and subsequent non-radiative recombination with free carriers.
RGB color sensor implemented with LEDs
This paper presents the design and implementation of an optical sensor to detect color changes in fruit by means of white light reflection to measure fruit ripeness in industrial and agricultural applications. The system consists of a LED RGB array including photodetectors, a power source and plastic optic fiber (POF). By means of Labview ® graphic interface we can control the power emission of the diodes digitally mixing the colors at different intensities until we achieve white light to be used as a source for the color sensor. We used an ATmega2560 microcontroller as a data collection device to monitor the colors obtained and to show them as color models using Matlab ®. We show results from tests conducted using two guava samples, observing the evolution of the color change on the fruit skin until they became overripe.
Design of high power LED-based UVA emission system and a photosensitive substance for clinical application in corneal radiation
Alessandro D. Mota, André M. Cestari, André O. de Oliveira, et al.
This work presents an innovative cross-linking procedure to keratoconus treatment, a corneal disease. It includes the development of an ultraviolet controlled emission portable device based on LED source and a new formulation of a photosensitive drug called riboflavin. Thus new formulation improves drug administration by its transepithelial property. The UV reaction with riboflavin in corneal tissue leads to a modification of corneal collagen fibers, turning them more rigid and dense, and consequently restraining the advance of the disease. We present the control procedures to maintain UV output power stable up to 45mw/cm2, the optical architecture that leads to a homogeneous UV spot and the new formulation of Riboflavin.
Fabrication of LED full-color display matrix with small pixel
Jing Li, Bin Xue, Hua Yang, et al.
With the development in material growth, device fabrication and packaging of LEDs, emission spectral of LED is able to cover the visible spectrum. In addition to the well-known lighting applications of LED, display is also one of the important applications of LED. In contrast with LCD, LEDs display has better contrast ratio, higher response rate, etc., which makes LEDs along with other self-illumination technologies an ideal candidate in making display panel. With the popularization of HD and Ultra HD standard, display panel with better image quality is needed. The number of pixels of the panel needs to be increased and the size of each pixel needs to be minimized. In this paper, we prepared a LED full-color display panel based on a 32×32 LED matrix with typical pixel size of 0.5mm. LED full-color display array with small pixel was obtained by mounting red LEDs, green LEDs and blue LEDs directly onto an isolating substrate such as sapphire . In addition, the substrate has metalized pads and connection before the matrix was connected to control unit. The control line and the column data line are prepared on the substrate, and there is an effective electrical insulation layers between them. The isolation layers consists of a SiO2 layer of 1000nm and polyimide layer of 3000nm. Polyimide as an important electrical insulating layer, we study some properties of it, such as :PI amination rate as a function of the curing temperature, PI resistivity as a function of the curing temperature and the punction electric field intensity of PI as a function of the film thickness of PI.