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Proceedings of SPIE Volume 9425

Advances in Patterning Materials and Processes XXXII
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Volume Details

Volume Number: 9425
Date Published: 23 April 2015
Softcover: 60 papers (556) pages
ISBN: 9781628415278

Table of Contents
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Front Matter: Volume 9425
Author(s): Proceedings of SPIE
Recent progress on multipatterning: approach to pattern placement correction
Author(s): Hidetami Yaegashi; Kenichi Oyama; Arisa Hara; Sakurako Natori; Shohei Yamauchi; Masatoshi Yamato; Noriaki Okabe; Kyohei Koike
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Towards 11nm half-pitch resolution for a negative-tone chemically amplified molecular resist platform for extreme-ultraviolet lithography
Author(s): Andreas Frommhold; Alexandra McClelland; Dongxu Yang; Richard E. Palmer; John Roth; Yasin Ekinci; Mark C. Rosamund; Alex P. G. Robinson
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Recent progress of negative-tone imaging with EUV exposure
Author(s): Toru Fujimori; Toru Tsuchihashi; Toshiro Itani
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The effect of resist dissolution process on pattern formation variability: an in situ analysis using high-speed atomic force microscopy
Author(s): Julius Joseph Santillan; Motoharu Shichiri; Toshiro Itani
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XAS photoresists electron/quantum yields study with synchrotron light
Author(s): Peter de Schepper; Alessandro Vaglio Pret; Terje Hansen; Angelo Giglia; Kenji Hoshiko; Antonio Mani; John J. Biafore
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Inhomogeneity of PAGs in a hybrid-type EUV resist system studied by molecular-dynamics simulations for EUV lithography
Author(s): Minoru Toriumi; Toshiro Itani
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Advanced patterning approaches based on negative-tone development (NTD) process for further extension of 193nm immersion lithography
Author(s): Michihiro Shirakawa; Naoki Inoue; Hajime Furutani; Kei Yamamoto; Akiyoshi Goto; Mitsuhiro Fujita
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Optimizing performance in cross-linking negative-tone molecular resists
Author(s): Richard A. Lawson; Hannah Narcross; Brandon Sharp; Jun Sung Chun; Mark Neisser; Laren M. Tolbert; Clifford L. Henderson
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Process variation challenges and resolution in the negative-tone develop double patterning for 20nm and below technology node
Author(s): Sohan S Mehta; Lakshmi K Ganta; Vikrant Chauhan; Yixu Wu; Sunil Singh; Chia Ann; Lokesh Subramany; Craig Higgins; Burcin Erenturk; Ravi Srivastava; Paramjit Singh; Hui Peng Koh; David Cho
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Effect of molecular resist structure on glass transition temperature and lithographic performance in epoxide functionalized negative tone resists
Author(s): Hannah Narcross; Richard A Lawson; Brandon Sharp; Jun Sung Chun; Mark Neisser; Laren M. Tolbert; Clifford L. Henderson
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Total fidelity management in self-aligned multiple patterning process
Author(s): Masatoshi Yamato; Noriaki Okabe; Arisa Hara; Sakurako Natori; Shouhei Yamauchi; Kyohei Koike; Kenichi Oyama; Hidetami Yaegashi
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Tailored molecular glass resists for scanning probe lithography
Author(s): Christian Neuber; Hans-Werner Schmidt; Peter Strohriegl; Andreas Ringk; Tristan Kolb; Andreas Schedl; Vincent Fokkema; Marijn G. A. van Veghel; Mike Cooke; Colin Rawlings; Urs Dürig; Armin Knoll; Jean- François de Marneffe; Ziad el Otell; Marcus Kaestner; Yana Krivoshapkina; Matthias Budden; Ivo W. Rangelow
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Effects of the statistical fluctuation of PAG and quencher on LWR of ArF resists
Author(s): Mitsuhiro Fujita; Michihiro Shirakawa; Shuhei Yamaguchi
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Fundamental study of spin-coating using in-situ analysis and simulation
Author(s): Masahiko Harumoto; Jun-ichi Yoshida; Harold Stokes; Yuji Tanaka; Tadashi Miyagi; Koji Kaneyama; Charles Pieczulewski; Masaya Asai
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Revealing beam-induced chemistry using modulus mapping in negative-tone EUV/e-beam resists with and without cross-linker additives
Author(s): Prashant Kulshreshtha; Ken Maruyama; Scott Dhuey; Dominik Ziegler; Weilun Chao; Paul Ashby; Deirdre Olynick
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Understanding the efficacy of linewidth roughness post-processing
Author(s): Chris A. Mack
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Influence of etch process on contact hole local critical dimension uniformity in extreme-ultraviolet lithography
Author(s): Gian F. Lorusso; Ming Mao; Liesbeth Reijnen; Katja Viatkina; Roel Knops; Gijsbert Rispens; Timon Fliervoet
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Organic hard masks utilizing fullerene derivatives
Author(s): Andreas Frommhold; Alan G. Brown; Richard E. Palmer; Tom Lada; Alex P. Robinson
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Impact of sequential infiltration synthesis on pattern fidelity of DSA lines
Author(s): Arjun Singh; Werner Knaepen; Safak Sayan; Ziad el Otell; Boon Teik Chan; Jan Willem Maes; Roel Gronheid
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Material readiness for generation 2 directed self-assembly (DSA) < 24nm pitch
Author(s): Eungnak Han; Todd R. Younkin; Manish Chandhok; Alan M. Myers; Tristan A. Tronic; Florian Gstrein; Kranthi Kumar Elineni; Ashish Gaikwad; Paul A. Nyhus; Praveen K. Setu; Charles H. Wallace
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Directed self-assembly of topcoat-free, integration-friendly high-X block copolymers
Author(s): Eri Hirahara; Margareta Paunescu; Orest Polishchuk; EunJeong Jeong; Edward Ng; Jianhui Shan; Jihoon Kim; SungEun Hong; Durairaj Baskaran; Guanyang Lin; Ankit Vora; Melia Tjio; Noel Arellano; Charles T. Rettner; Elizabeth Lofano; Chi-Chun Liu; Hsinyu Tsai; Anindarupa Chunder; Khanh Nguyen; Alexander M. Friz; Amy N. Bowers; Srinivasan Balakrishnan; Joy Y. Cheng; Daniel P. Sanders
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Driving DSA into volume manufacturing
Author(s): Mark Somervell; Takashi Yamauchi; Soichiro Okada; Tadatoshi Tomita; Takanori Nishi; Shinichiro Kawakami; Makoto Muramatsu; Etsuo Iijima; Vinayak Rastogi; Takeo Nakano; Fumiko Iwao; Seiji Nagahara; Hiroyuki Iwaki; Makiko Dojun; Koichi Yatsuda; Toshikatsu Tobana; Ainhoa Romo Negreira; Doni Parnell; Benjamen Rathsack; Kathleen Nafus; Jean-Luc Peyre; Takahiro Kitano
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Directed self-assembly process integration: fin patterning approaches and challenges
Author(s): Safak Sayan; B. T. Chan; Taisir Marzook; Nadia Vandenbroeck; Efrain A. Sanchez; Roel Gronheid; Arjun Singh; Paulina R. Delgadillo
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Evaluation of novel processing approaches to improve extreme ultraviolet (EUV) photoresist pattern quality
Author(s): Cecilia Montgomery; Jun Sung Chun; Yu-Jen Fan; Shih-Hui Jen; Mark Neisser; Kevin D. Cummings; Warren Montgomery; Takashi Saito; Lior Huli; David Hetzer; Hiroie Matsumoto; Andrew Metz; Vinayak Rastogi
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Integrated fab process for metal oxide EUV photoresist
Author(s): Andrew Grenville; Jeremy T. Anderson; Benjamin L. Clark; Peter De Schepper; Joseph Edson; Michael Greer; Kai Jiang; Michael Kocsis; Stephen T. Meyers; Jason K. Stowers; Alan J. Telecky; Danilo De Simone; Geert Vandenberghe
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High-sensitivity molecular organometallic resist for EUV (MORE)
Author(s): James Passarelli; Michael Murphy; Ryan Del Re; Miriam Sortland; Levi Dousharm; Michaela Vockenhuber; Yasin Ekinci; Mark Neisser; Daniel A. Freedman; Robert L. Brainard
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Development of EUV chemically amplified resist which has novel protecting group
Author(s): Shogo Matsumaru; Tatsuya Fujii; Takashi Kamizono; Kenta Suzuki; Hiroto Yamazaki; Masatoshi Arai; Yoshitaka Komuro; Akiya Kawaue; Daisuke Kawana; Taku Hirayama; Katsumi Ohmori
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The role of guide stripe chemistry in block copolymer directed self-assembly
Author(s): Robert Seidel; Lance Williamson; YoungJun Her; Jihoon Kim; Guanyang Lin; Paul Nealey; Roel Gronheid
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Patterning sub-25nm half-pitch hexagonal arrays of contact holes with chemo-epitaxial DSA guided by ArFi pre-patterns
Author(s): Arjun Singh; Boon Teik Chan; Doni Parnell; Hengpeng Wu; Jian Yin; Yi Cao; Roel Gronheid
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DSA graphoepitaxy calibrations for contact hole multiplication
Author(s): Trey Graves; Alessandro Vaglio Pret; Stewart Robertson; Mark Smith; Jan Doise; Joost Bekaert; Roel Gronheid
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Development and integration of systems with enhanced resolutions based on Si-containing block copolymers for line space applications
Author(s): G. Fleury; K. Aissou; M. Mumtaz; X. Chevalier; C. Nicolet; C. Navarro; M. Fernandez-Regulez; P. Pimenta-Barros; R. Tiron; C. Brochon; E. Cloutet; G. Hadziioannou
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Analysis of the self-assembling and the defect annihilation processes in DSA using meso-scale simulation
Author(s): Hiroshi Morita; Yuki Norizoe
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Dry development rinse (DDR) process and material for ArF/EUV extension technique toward 1Xnm hp and beyond
Author(s): Shuhei Shigaki; Ryuji Onishi; Rikimaru Sakamoto
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Impact of pixel-dose optimization on pattern fidelity for helium ion beam lithography on EUV resist
Author(s): Nima Kalhor; Wouter Mulckhuyse; Paul Alkemade; Diederik Maas
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Sustainability and applicability of spacer-related patterning towards 7nm node
Author(s): Kenichi Oyama; Shohei Yamauchi; Arisa Hara; Sakurako Natori; Masatoshi Yamato; Noriaki Okabe; Kyohei Koike; Hidetami Yaegashi
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Dry development rinse process for ultimate resolution improvement via pattern collapse mitigation
Author(s): Safak Sayan; Zheng Tao; B. T. Chan; Danilo De Simone; Yuhei Kuwahara; Kathleen Nafus; Michael J. Leeson; Florian Gstrein; Arjun Singh; Geert Vandenberghe
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Block co-polymer approach for CD uniformity and placement error improvement in DSA hole grapho-epitaxy process
Author(s): Tasuku Matsumiya; Tsuyoshi Kurosawa; Masahito Yahagi; Hitoshi Yamano; Ken Miyagi; Takaya Maehashi; Issei Suzuki; Akiya Kawaue; Yoshitaka Komuro; Taku Hirayama; Katsumi Ohmori
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Progress in spin-on metal oxide hardmask materials for filling applications
Author(s): Huirong Yao; Alberto D. Dioses; Salem Mullen; Elizabeth Wolfer; Douglas McKenzie; Dalil Rahman; JoonYeon Cho; Munirathna Padmanaban; Claire Petermann; YoungJun Her; Yi Cao
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Aqueous-based thick photoresist removal for bumping applications
Author(s): John C. Moore; Alex J. Brewer; Alman Law; Jared M. Pettit
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Coater/developer process integration of metal-oxide based photoresist
Author(s): Benjamin L. Clark; Michael Kocsis; Michael Greer; Andrew Grenville; Takashi Saito; Lior Huli; Richard Farrell; David Hetzer; Shan Hu; Hiroie Matsumoto; Andrew Metz; Shinchiro Kawakami; Koichi Matsunaga; Masashi Enomoto; Jeffrey Lauerhaas; Anthony Ratkovich; David DeKraker
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Directly patternable dielectric based on fluorinated polyimide
Author(s): Andrew R. Dick; William K. Bell; Brendan Luke; Erin Maines; Brennan Mueller; Paul A. Kohl; Brandon Rawlings; C. Grant Willson
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Studying the mechanism of hybrid nanoparticle EUV photoresists
Author(s): Ben Zhang; Li Li; Jing Jiang; Mark Neisser; Jun Sung Chun; Christopher K. Ober; Emmanuel P. Giannelis
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Measurement of acid diffusion from PAG in photoresists by using TOF-SIMS with GCIB
Author(s): Naoki Man; Atsushi Sekiguchi; Yoko Matsumoto
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The effect of resist material composition on development behavior
Author(s): Shinya Minegishi; Toshiro Itani
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Development of new xanthendiol derivatives applied to the negative-tone molecular resists for EB/EUVL
Author(s): Takumi Toida; Akihiro Suzuki; Naoya Uchiyama; Takashi Makinoshima; Masaaki Takasuka; Takashi Sato; Masatoshi Echigo
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Light-scattering thermal cross-linking material using morphology of nanoparticle free polymer blends
Author(s): Satoshi Takei
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Blending approaches to enhance structural order in block-copolymer's self-assemblies
Author(s): X. Chevalier; C. Nicolet; A. Gharbi; P. Pimenta-Barros; R. Tiron; G. Fleury; G. Hadziioannou; I. Iliopoulos; C. Navarro
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High-sensitivity green resist material with organic solvent-free spin-coating and tetramethylammonium hydroxide-free water-developable processes for EB and EUV lithography
Author(s): Satoshi Takei; Makoto Hanabata; Akihiro Oshima; Miki Kashiwakura; Takahiro Kozawa; Seiichi Tagawa
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Aromatizing unzipping polyester for EUV photoresist
Author(s): Kensuke Matsuzawa; Ryan Mesch; Mike Olah; Wade Wang; Scott T. Phillips; C. Grant Willson
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Evaluation of novel lactone derivatives for chemically amplified EUV resists
Author(s): Hiroyasu Tanaka; Tetsuhiko Mizusaka; Hiroyuki Tanagi; Kikuo Furukawa; Hiroki Yamamoto; Takahiro Kozawa
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Base developable negative tone molecular resist based on epoxide cross-linking
Author(s): Brandon Sharp; Richard A. Lawson; Ashten Fralick; Hannah Narcross; Jun Sung Chun; Mark Neisser; Laren M. Tolbert; Clifford L. Henderson
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Top-coatless 193nm positive-tone development immersion resist for logic application
Author(s): Lian Cong Liu; Tsung Ju Yeh; Yeh-Sheng Lin; Yu Chin Huang; Chien Wen Kuo; Wen Liang Huang; Chia Hung Lin; Chun Chi Yu; Ray Hsu; I-Yuan Wan; Jeff Lin; Kwang-Hwyi Im; Hae Jin Lim; Hyun K. Jeon; Yasuhiro Suzuki; Cheng Bai Xu
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Nanoimprint lithography for green water-repellent film derived from biomass with high-light transparency
Author(s): Satoshi Takei; Makoto Hanabata
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Development of spin-on metal hardmask (SOMHM) for advanced node
Author(s): Shintaro Yamada; Deyan Wang; Vivian Chuang; Cong Liu; Sabrina Wong; Michael B Clark; Charlotte Cutler; William Williams; Paul Baranowski; Mingqi Li; Joe Mattia; JoAnne Leonard; Peter Trefonas; Kathleen O’Connell; Cheng bai Xu
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A comprehensive approach for micro and multiple bridges mitigation in immersion photolithography
Author(s): L. D'Urzo; W. Schollaert; X. Buch; H. Stokes; Y. Thouroude
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Thickness optimization for lithography process on silicon substrate
Author(s): Xiaojing Su; Yajuan Su; Yansong Liu; Fong Chen; Zhimin Liu; Wei Zhang; Bifeng Li; Tao Gao; Yayi Wei
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Advanced shrink material for NTD process with lower Y/X shrinkage bias of elongated patterns
Author(s): Yoshihiro Miyamoto; Takashi Sekito; John Sagan; Yuko Horiba; Takafumi Kinuta; Tatsuro Nagahara; Shinji Tarutani
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Microbridge reduction in negative-tone imaging at photoresist point-of-use filtration
Author(s): Toru Umeda; Tsukasa Yamanaka; Naoya Iguchi; Shuichi Tsuzuki
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Novel thin film analysis to investigate actual film formation
Author(s): Kazunori Sakai; Kenji Mochida; Shinichi Nakamura; Tooru Kimura; Kazuhiro Yoshikawa; Naoki Man; Hirofumi Seiki; Masaaki Takeda
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Cost effective processes by using negative-tone development application
Author(s): Kei Yamamoto; Keita Kato; Keiyu Ou; Michihiro Shirakawa; Sou Kamimura
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Point-of-use filtration strategy for negative tone developer in extended immersion and extreme-ultraviolet (EUV) lithography
Author(s): L. D'Urzo; P. Foubert; H. Stokes; Y. Thouroude; A. Xia; Aiwen Wu
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Sustaining the silicon revolution: from 3D transistors to 3D integration (Presentation Recording)
Author(s): Tsu-Jae King Liu
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