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Proceedings of SPIE Volume 9422

Extreme Ultraviolet (EUV) Lithography VI
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Volume Details

Volume Number: 9422
Date Published: 23 April 2015
Softcover: 85 papers (866) pages
ISBN: 9781628415247

Table of Contents
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Front Matter: Volume 9422
Author(s): Proceedings of SPIE
Toward 10nm half-pitch in EUV lithography: results on resist screening and pattern collapse mitigation techniques
Author(s): Tero S. Kulmala; Michaela Vockenhuber; Elizabeth Buitrago; Roberto Fallica; Yasin Ekinci
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Extending resolution limits of EUV resist materials
Author(s): Marie Krysak; Michael Leeson; Eungnak Han; James Blackwell; Shane Harlson
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Relationship between information and energy carried by extreme-ultraviolet photons: consideration from the viewpoint of sensitivity enhancement
Author(s): Takahiro Kozawa; Shinya Fujii; Julius Joseph Santillan; Toshiro Itani
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New developments in ligand-stabilized metal oxide nanoparticle photoresists for EUV lithography
Author(s): Christopher Ober; Jing Jiang; Ben Zhang; Li Li; Emmanuel Giannelis; Jun Sung Chun; Mark Neisser; Reyes Sierra-Alvares
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Studying secondary electron behavior in EUV resists using experimentation and modeling
Author(s): Amrit Narasimhan; Steven Grzeskowiak; Bharath Srivats; Henry C. Herbol; Liam Wisehart; Chris Kelly; William Earley; Leonidas E. Ocola; Mark Neisser; Gregory Denbeaux; Robert L. Brainard
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Analysis of shot noise limitations due to absorption count in EUV resists
Author(s): Suchit Bhattarai; Weilun Chao; Shaul Aloni; Andrew R. Neureuther; Patrick P. Naulleau
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Low-energy electron (0-100eV) interaction with resists using LEEM
Author(s): A. Thete; D. Geelen; S. Wuister; S. J. van der Molen; R. M. Tromp
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Performance optimization of MOPA pre-pulse LPP light source
Author(s): Alexander A. Schafgans; Daniel J. Brown; Igor V. Fomenkov; Rick Sandstrom; Alex Ershov; Georgiy Vaschenko; Rob Rafac; Michael Purvis; Slava Rokitski; Yezheng Tao; Daniel J. Riggs; Wayne J. Dunstan; Matthew Graham; Nigel R. Farrar; David C. Brandt; Norbert Böwering; Alberto Pirati; Noreen Harned; Christian Wagner; Hans Meiling; Ron Kool
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Performance of one hundred watt HVM LPP-EUV source
Author(s): Hakaru Mizoguchi; Hiroaki Nakarai; Tamotsu Abe; Krzysztof M Nowak; Yasufumi Kawasuji; Hiroshi Tanaka; Yukio Watanabe; Tsukasa Hori; Takeshi Kodama; Yutaka Shiraishi; Tatsuya Yanagida; Georg Soumagne; Tsuyoshi Yamada; Taku Yamazaki; Shinji Okazaki; Takashi Saitou
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Considerations for a free-electron laser-based extreme-ultraviolet lithography program
Author(s): Erik R. Hosler; Obert R. Wood; William A. Barletta; Pawitter J. S. Mangat; Moshe E. Preil
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Sub-aperture EUV collector with dual-wavelength spectral purity filter
Author(s): Torsten Feigl; Marco Perske; Hagen Pauer; Tobias Fiedler; Uwe Zeitner; Robert Leitel; Hans-Christoph Eckstein; Philipp Schleicher; Sven Schröder; Marcus Trost; Stefan Risse; Ralf Steinkopf; Frank Scholze; Christian Laubis
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High-radiance LDP source for mask-inspection application
Author(s): Yusuke Teramoto; Bárbara Santos; Guido Mertens; Ralf Kops; Margarete Kops; Alexander von Wezyk; Hironobu Yabuta; Akihisa Nagano; Takahiro Shirai; Noritaka Ashizawa; Kiyotada Nakamura; Kunihiko Kasama
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Optimum pre-pulsing and target geometry of LPP for efficient EUV and BEUV sources
Author(s): Tatyana Sizyuk; Ahmed Hassanein
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Magnetron sputtering for the production of EUV mask blanks
Author(s): Patrick Kearney; Tat Ngai; Anil Karumuri; Jung Yum; Hojune Lee; David Gilmer; Tuan Vo; Frank Goodwin
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Alternative materials for high numerical aperture extreme ultraviolet lithography mask stacks
Author(s): Obert Wood; Sudharshanan Raghunathan; Pawitter Mangat; Vicky Philipsen; Vu Luong; Patrick Kearney; Erik Verduijn; Aditya Kumar; Suraj Patil; Christian Laubis; Victor Soltwisch; Frank Scholze
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Understanding EUV mask blank surface roughness induced LWR and associated roughness requirement
Author(s): Pei-Yang Yan; Guojing Zhang; Eric M. Gullikson; Ken A. Goldberg; Markus P. Benk
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Development and evaluation of interface-stabilized and reactive-sputtered oxide-capped multilayers for EUV lithography
Author(s): Michael Kriese; Yuriy Platonov; Jim Rodriguez; Gary Fournier; Steven Grantham; Charles Tarrio; John Curry; Shannon Hill; Thomas Lucatorto
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Novel resist approaches to enable EUV lithography in high volume manufacturing and extensions to future nodes
Author(s): Mark Neisser; Kevin Cummings; Sean Valente; Cecilia Montgomery; Yu-Jen Fan; Ken Matthews; JunSung Chun; Paul D. Ashby
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Understanding of stochastic noise
Author(s): Seo-Min Kim; Chang-Moon Lim; Mi-Rim Jung; Young-Sik Kim; Won-Taik Kwon; Chang-Nam Ahn; Kyu-Tae Sun; Anita Fumar-Pici; Alek C. Chen
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Negative-tone imaging with EUV exposure for 14nm hp and beyond
Author(s): Hideaki Tsubaki; Wataru Nihashi; Toru Tsuchihashi; Toru Fujimori; Makoto Momota; Takahiro Goto
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Acid generation mechanism in anion-bound chemically amplified resists used for extreme ultraviolet lithography
Author(s): Yoshitaka Komuro; Hiroki Yamamoto; Kazuo Kobayashi; Katsumi Ohomori; Takahiro Kozawa
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Novel EUV resist development for sub-14nm half pitch
Author(s): Masafumi Hori; Takehiko Naruoka; Hisashi Nakagawa; Tomohisa Fujisawa; Takakazu Kimoto; Motohiro Shiratani; Tomoki Nagai; Ramakrishnan Ayothi; Yoshi Hishiro; Kenji Hoshiko; Toru Kimura
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EUV patterning improvement toward high-volume manufacturing
Author(s): Yuhei Kuwahara; Koichi Matsunaga; Shinichiro Kawakami; Kathleen Nafus; Philippe Foubert; Anne-Marie Goethals
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Towards production ready processing with a state-of-the-art EUV cluster
Author(s): Karen Petrillo; Nicole Saulnier; Richard Johnson; Luciana Meli; Chris Robinson; Chiew-seng Koay; Nelson Felix; Daniel Corliss; Matthew Colburn; Takashi Saito; Lior Huli; David Hetzer; Hiroie Matsumoto; Andrew Metz; Yudai Hira
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EUV contact holes and pillars patterning
Author(s): Sarohan Park; Danilo De Simone ; Zheng Tao; Geert Vandenberghe; Yoonsuk Hyun; Seo-Min Kim; Chang-Moon Lim
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EUV processing and characterization for BEOL
Author(s): Nicole Saulnier; Yongan Xu; Wenhui Wang; Lei Sun; Lin Lee Cheong; Romain Lallement; Genevieve Beique; Bassem Hamieh; John C. Arnold; Nelson Felix; Matthew Colburn
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Implementation of assist features in EUV lithography
Author(s): Fan Jiang; Martin Burkhardt; Ananthan Raghunathan; Andres Torres; Rachit Gupta; James Word
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Optical proximity effects in 4-nm EUV lithography: a rigorous study using a new PSTD method
Author(s): Michael Yeung; Eytan Barouch
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Directed self assembly on resist-limited guiding patterns for hole grapho-epitaxy: Can DSA help lower EUV's source power requirements?
Author(s): J. Andres Torres; Fan Jiang; Yuansheng Ma; Joerg Mellman; Kafai Lai; Ananthan Raghunathan; Yongan Xu; Chi-Chun Liu; Cheng Chi
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Best focus shift mechanism for thick masks
Author(s): Martin Burkhardt; Ananthan Raghunathan
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Mitigation of image contrast loss due to mask-side non-telecentricity in an EUV scanner
Author(s): Chih-Tsung Shih; Shinn-Sheng Yu; Yen-Cheng Lu; Chia-Chun Chung; Jack J. H. Chen; Anthony Yen
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EUV telecentricity and shadowing errors impact on process margins
Author(s): D. Civay; E. Hosler; V. Chauhan; T. Guha Neogi; L. Smith; D. Pritchard
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Analysis of EUV resist outgassing depended on the dosage
Author(s): E. Shiobara; I. Takagi; Y. Kikuchi; T. Sasami; S. Minegishi; T. Fujimori; T. Watanabe; T. Harada; H. Kinoshita; S. Inoue
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First results of outgas resist family test and correlation between outgas specifications and EUV resist development
Author(s): Yu-Jen Fan; Ken Maruyama; Ramakrishnan Ayothi; Takehiko Naruoka; Tonmoy Chakraborty; Dominic Ashworth; Jun Sung Chun; Cecilia Montgomery; Shih-Hui Jen; Mark Neisser; Kevin Cummings
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Collaborative work on reducing the intersite gaps in outgassing qualification
Author(s): Soichi Inoue; Eishi Shiobara; Takeshi Sasami; Isamu Takagi; Yukiko Kikuchi; Toru Fujimori; Shinya Minegishi; Robert Berg; Thomas Lucatorto; Shannon Hill; Charles Tarrio; Ivan Pollentier; Yen-Chih Lin; Yu-Jen Fan; Dominic Ashworth
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Polarization resolved measurements with the new EUV ellipsometer of PTB
Author(s): Victor Soltwisch; Andreas Fischer; Christian Laubis; Christian Stadelhoff; Frank Scholze; Albrecht Ullrich
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Aberration estimation using EUV mask roughness
Author(s): Rene A. Claus; Antoine Wojdyla; Markus P. Benk; Kenneth A. Goldberg; Andrew R. Neureuther; Patrick P. Naulleau; Laura Waller
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A method of image-based aberration metrology for EUVL tools
Author(s): Zac Levinson; Sudharshanan Raghunathan; Erik Verduijn; Obert Wood; Pawitter Mangat; Kenneth Goldberg; Markus Benk; Antoine Wojdyla; Vicky Philipsen; Eric Hendrickx; Bruce W. Smith
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Correlation of actinic blank inspection and experimental phase defect printability on NXE3x00 EUV scanner
Author(s): R. Jonckheere; D. Van den Heuvel; N. Takagi; H. Watanabe; E. Gallagher
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Phase measurements of EUV mask defects
Author(s): Rene A. Claus; Yow-Gwo Wang; Antoine J. Wojdyla; Markus P. Benk; Kenneth A. Goldberg; Andrew R. Neureuther; Patrick P. Naulleau; Laura Waller
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Application of the transport of intensity equation to EUV multilayer defect analysis
Author(s): Dongbo Xu; Peter Evanschitzky; Andreas Erdmann
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Actinic review of EUV masks: Status and recent results of the AIMS EUV system
Author(s): Markus R. Weiss; Dirk Hellweg; Markus Koch; Jan Hendrik Peters; Sascha Perlitz; Anthony Garetto; Krister Magnusson; Renzo Capelli; Vibhu Jindal
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New ways of looking at masks with the SHARP EUV microscope
Author(s): Kenneth A. Goldberg; Markus P. Benk; Antoine Wojdyla; David G. Johnson; Alexander P. Donoghue
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SEMATECH produces defect-free EUV mask blanks: defect yield and immediate challenges
Author(s): Alin O. Antohe; Dave Balachandran; Long He; Patrick Kearney; Anil Karumuri; Frank Goodwin; Kevin Cummings
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Enhancing defect detection with Zernike phase contrast in EUV multilayer blank inspection
Author(s): Yow-Gwo Wang; Ryan Miyakawa; Weilun Chao; Markus Benk; Antoine Wojdyla; Alex Donoghue; David Johnson; Kenneth Goldberg; Andy Neureuther; Ted Liang; Patrick Naulleau
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Toward defect guard-banding of EUV exposures by full chip optical wafer inspection of EUV mask defect adders
Author(s): Scott D. Halle; Luciana Meli; Robert Delancey; Kaushik Vemareddy; Gary Crispo; Ravi Bonam; Martin Burkhardt; Daniel Corliss
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Application of differential phase contrast imaging to EUV mask inspection: a numerical study
Author(s): Xibin Zhou; Dominic Ashworth; Frank Goodwin; Kevin Cummings
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EUV lithography scanner for sub-8nm resolution
Author(s): Jan van Schoot; Koen van Ingen Schenau; Chris Valentin; Sascha Migura
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EUV lithography optics for sub-9nm resolution
Author(s): Bernhard Kneer; Sascha Migura; Winfried Kaiser; Jens Timo Neumann; Jan van Schoot
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Imaging performance of EUV lithography optics configuration for sub-9nm resolution
Author(s): Jens Timo Neumann; Matthias Rösch; Paul Gräupner; Sascha Migura; Bernhard Kneer; Winfried Kaiser; Koen van Ingen Schenau
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EUV resolution enhancement techniques (RETs) for k1 0.4 and below
Author(s): Stephen Hsu; Rafael Howell; Jianjun Jia; Hua-Yu Liu; Keith Gronlund; Steve Hansen; Jörg Zimmermann
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Extending shearing interferometry to high-NA for EUV optical testing
Author(s): Ryan Miyakawa; Patrick Naulleau
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Advanced coatings for next generation lithography
Author(s): P. Naujok; Sergiy Yulin; N. Kaiser; A. Tünnermann
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The patterning center of excellence (CoE): an evolving lithographic enablement model
Author(s): Warren Montgomery; Jun Sung Chun; Michael Liehr; Michael Tittnich
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EUV mask cleans comparison of frontside and dual-sided concurrent cleaning
Author(s): Lin Lee Cheong; Louis M. Kindt; Christina Turley; Dusty Leonhard; John M. Boyle; Chris F. Robinson; Jed H. Rankin; Daniel Corliss
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Maintaining Moore’s law: enabling cost-friendly dimensional scaling
Author(s): Arindam Mallik; Julien Ryckaert; Abdelkarim Mercha; Diederik Verkest; Kurt Ronse; Aaron Thean
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Multi-stack extreme-ultraviolet pellicle with out-of-band reduction
Author(s): Sung-Gyu Lee; Guk-Jin Kim; In-Seon Kim; Jin-Ho Ahn; Jin-Goo Park; Hye-Keun Oh
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Performance overview and outlook of EUV lithography systems
Author(s): Alberto Pirati; Rudy Peeters; Daniel Smith; Sjoerd Lok; Arthur W. E. Minnaert; Martijn van Noordenburg; Jörg Mallmann; Noreen Harned; Judon Stoeldraijer; Christian Wagner; Carmen Zoldesi; Eelco van Setten; Jo Finders; Koen de Peuter; Chris de Ruijter; Milos Popadic; Roger Huang; Martin Lin; Frank Chuang; Roderik van Es; Marcel Beckers; David Brandt; Nigel Farrar; Alex Schafgans; Daniel Brown; Herman Boom; Hans Meiling; Ron Kool
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Overlay and edge placement control strategies for the 7nm node using EUV and ArF lithography
Author(s): Jan Mulkens; Michael Hanna; Hannah Wei; Vidya Vaenkatesan; Henry Megens; Daan Slotboom
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Evaluation of EUV resist performance using interference lithography
Author(s): Elizabeth Buitrago; O. Yildirim; C. Verspaget; N. Tsugama; R. Hoefnagels; G. Rispens; Y. Ekinci
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An accurate method to determine the amount of out-of-band light in an EUV scanner
Author(s): Shinn-Sheng Yu; Yen-Cheng Lu; Chih-Tsung Shih; Chia-Chun Chung; Shang-Chieh Chien; Shun-Der Wu; Norman Chen; Shu-Hao Chang; Hsiang-Yu Chou; Jui-Ching Wu; Tao-Ming Huang; Jack J. H. Chen; Anthony Yen
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EUV mask particle adders during scanner exposure
Author(s): Yoonsuk Hyun; Jinsoo Kim; Kyuyoung Kim; Sunyoung Koo; SeoMin Kim; Youngsik Kim; Changmoon Lim; Nohjung Kwak
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Debris monitoring and minimization system for EUV sources
Author(s): Arjen de Jong; René T. M. Jilisen; Mark van de Kerkhof; Arnold van Putten
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Feasibility study on the impact of high-power EUV irradiation on key lithographic elements
Author(s): Soichi Inoue; Shinji Mikami; Eishi Shiobara; Isamu Takagi; Hiroyuki Tanaka
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Evaluation of rinse material and process for EUV lithography
Author(s): Kazuma Yamamoto; Toshiro Itani
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Measurement of the phase defect size using scanning probe microscope and at-wavelength inspection tool
Author(s): Tsuyoshi Amano; Tsukasa Abe
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Low-LER tin carboxylate photoresists using EUV
Author(s): Ryan Del Re; Miriam Sortland; James Pasarelli; Brian Cardineau; Yasin Ekinci; Michaela Vockenhuber; Mark Neisser; Daniel Freedman; Robert L. Brainard
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Systematic study of ligand structures of metal oxide EUV nanoparticle photoresists
Author(s): Jing Jiang; Mufei Yu; Ben Zhang; Mark Neisser; Jun Sung Chun; Emmanuel P. Giannelis; Christopher K. Ober
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Experimental validation of stochastic modeling for negative-tone develop EUV resists
Author(s): Itaru Kamohara; Weimin Gao; Ulrich Klostermann; Thomas Schmöller; Wolfgang Demmerle; Kevin Lucas; Danilo De Simone; Eric Hendrickx; Geert Vandenberghe
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Study of EUVL patterned mask inspection tool for half-pitch (hp) 16nm-11nm node
Author(s): Ryoichi Hirano; Susumu Iida; Tsuyoshi Amano; Hidehiro Watanabe; Masahiro Hatakeyama; Takeshi Murakami; Shoji Yoshikawa; Kenichi Karimata; Kenji Terao
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Dependence of defect size and shape on detectability for EUV patterned mask inspection
Author(s): Susumu Iida; Ryoichi Hirano; Tsuyoshi Amano; Hidehiro Watanabe
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Positive-tone EUV resists: complexes of platinum and palladium
Author(s): Miriam Sortland; Ryan Del Re; James Passarelli; Jodi Hotalen; Michaela Vockenhuber; Yasin Ekinci; Mark Neisser; Daniel A. Freedman; Robert L. Brainard
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Test of an argon cusp plasma for tin LPP power scaling
Author(s): Malcolm W. McGeoch
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Analysis of distinct scattering of extreme ultraviolet phase and amplitude multilayer defects with an actinic dark-field microscope
Author(s): Lukas Bahrenberg; Stefan Herbert; Jenny Tempeler; Aleksey Maryasov; Oskar Hofmann; Serhiy Danylyuk; Rainer Lebert; Peter Loosen; Larissa Juschkin
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Improving process and system for EUV coat-develop track
Author(s): Masahiko Harumoto; Harold Stokes; Yan Thouroude; Tadashi Miyagi; Koji Kaneyama; Charles Pieczulewski; Masaya Asai
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Effects of low-molecular weight resist components on dissolution behavior of chemically amplified resists for extreme ultraviolet lithography studied by quartz crystal microbalance
Author(s): Masaki Mitsuyasu; Hiroki Yamamoto; Takahiro Kozawa
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Evaluation of optical properties of EUV resist underlayer
Author(s): Jung Sik Kim; Seongchul Hong; Jae Uk Lee; Seung Min Lee; Jung Hwan Kim; Hyun Min Song; Jinho Ahn
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New approach to improve LER of EUV resist pattern by chemical and thermal treatment
Author(s): Tatsuro Nagahara; Kazuma Yamamoto; Yuriko Matsuura; Takashi Sekito
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Collector optic cleaning by in-situ hydrogen plasma
Author(s): Daniel T. Elg; Gianluca A. Panici; Shailendra N. Srivastava; D. N. Ruzic
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Simulation study of the influence of PEB reaction rates on resist LER
Author(s): Suchit Bhattarai; Andrew R. Neureuther; Patrick P. Naulleau
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LPP light source for actinic HVM inspection applications
Author(s): Bob Rollinger; Nadia Gambino; Duane Hudgins; Alexander Sanders; Markus Brandstätter; Reza S. Abhari; F. Abreau
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Study of Dill's B parameter measurement of EUV resist
Author(s): Atsushi Sekiguchi; Yoko Matsumoto; Tetsuo Harada; Takeo Watanabe; Hiroo Kinoshita
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Modeling of bi-spectral primary source for the EUV lithography
Author(s): A. P. Zhevlakov; R. P. Seisyan; V. G. Bespalov; V. V. Elizarov; A. S. Grishkanich; S. V. Kascheev
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Evaluating printability of buried native EUV mask phase defects through a modeling and simulation approach
Author(s): Mihir Upadhyaya; Vibhu Jindal; Adarsh Basavalingappa; Henry Herbol; Jenah Harris-Jones; Il-Yong Jang; Kenneth A. Goldberg; Iacopo Mochi; Sajan Marokkey; Wolfgang Demmerle; Thomas V. Pistor; Gregory Denbeaux
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Calibration of system errors in lateral shearing interferometer for EUV-wavefront metrology
Author(s): Jie Li; Feng Tang; Xiangzhao Wang; Fengzhao Dai; Feibin Wu
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Key components technology update of 100W HVM EUV source
Author(s): Taku Yamazaki; Hakaru Mizoguchi; Hiroaki Nakarai; Tamotsu Abe; Yasufumi Kawasuji; Takeshi Okamoto; Hiroshi Tanaka; Yukio Watanabe; Tsukasa Hori; Takeshi Kodama; Yutaka Shiraishi; Shinji Okazaki; Takashi Saitou
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13nm EUV free electron lasers for next generation photolithography: the critical importance of RF stability
Author(s): Simon Keens; Bodo Fritsche; Carmen Hiltbrunner; Marcel Frei
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