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Proceedings of SPIE Volume 9363

Gallium Nitride Materials and Devices X
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Volume Details

Volume Number: 9363
Date Published: 30 April 2015
Softcover: 42 papers (370) pages
ISBN: 9781628414530

Table of Contents
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Front Matter: Volume 9363
Author(s): Proceedings of SPIE
Ammonothermal growth of polar and non-polar bulk GaN crystal
Author(s): Yutaka Mikawa; Takayuki Ishinabe; Shinichiro Kawabata; Tae Mochizuki; Atsuhiko Kojima; Yuji Kagamitani; Hideo Fujisawa
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HVPE growth of AlXGa1-XN templates for UV-LED applications
Author(s): Chi-Tsung Tsai; Jia-Hao Liang; Tsung-Yen Tsai; Ray-Hua Horng; Dong-Sing Wuu
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Homoepitaxial HVPE GaN growth on non- and semi-polar seeds
Author(s): M. Amilusik; T. Sochacki; B. Lucznik; M. Fijalkowski; M. Iwinska; J. L. Weyher; E. Grzanka; P. Krupczynska; A. Khachapuridze; I. Grzegory; M. Bockowski
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Optical properties and band structure of highly doped gallium nitride
Author(s): Rüdiger Goldhahn; Karsten Lange; Martin Feneberg
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Temperature-dependent time-resolved photoluminescence measurements of (1-101)-oriented semi-polar AlGaN/GaN MQWs
Author(s): Daniel Rosales; Bernard Gil; Morteza Monavarian; Fan Zhang; Serdal Okur; Natalia Izyumskaya; Vitaliy Avrutin; Ümit Özgür; Hadis Morkoç
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Photoluminescence behavior of amber light emitting GaInN-GaN heterostructures
Author(s): Huong Thi Ngo; Daniel Rosales; Bernard Gil; Pierre Valvin; Benjamin Damilano; Kaddour Lekhal; Philippe de Mierry
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Identification of point defects in HVPE-grown GaN by steady-state and time-resolved photoluminescence
Author(s): M. A. Reshchikov; D. O. Demchenko; A. Usikov; H. Helava; Yu. Makarov
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Study of interface state trap density on characteristics of MOS-HEMT
Author(s): Ming-Chun Tseng; Ming-Hsien Hung; Dong-Sing Wuu; Ray-Hua Horng
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Stress related aspects of GaN technology physics
Author(s): Ephraim Suhir
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Photocathode electron beam sources using GaN and InGaN with NEA surface
Author(s): T. Nishitani; T. Maekawa; M. Tabuchi; T. Meguro; Y. Honda; H. Amano
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Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters
Author(s): Snežana Lazić; Ekaterina Chernysheva; Žarko Gačević; Noemi García-Lepetit; Herko P. van der Meulen; Marcus Müller; Frank Bertram; Peter Veit; Jürgen Christen; Almudena Torres-Pardo; José M. González Calbet; Enrique Calleja; José M. Calleja
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Optical properties of small GaN/Al0.5Ga0.5N quantum dots grown on (11-22) GaN templates
Author(s): Julien Sellés; Daniel Rosales; Bernard Gil; Guillaume Cassabois; Thierry Guillet; Julien Brault; Benjamin Damilano; Philippe Vennéguès; Philippe de Mierry; Jean Massies
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Present and future of GaN power devices and their applications
Author(s): Daisuke Ueda
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Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology
Author(s): Denis Marcon; Marleen Van Hove; Brice De Jaeger; Niels Posthuma; Dirk Wellekens; Shuzhen You; Xuanwu Kang; Tian-Li Wu; Maarten Willems; Steve Stoffels; Stefaan Decoutere
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Enhancement of AlGaN/GaN high-electron mobility transistor off-state drain breakdown voltage via backside proton irradiation
Author(s): F. Ren; Y.-H. Hwang; S. J. Pearton; Erin Patrick; Mark E. Law
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Trapping processes related to iron and carbon doping in AlGaN/GaN power HEMTs
Author(s): M. Meneghini; D. Bisi; I. Rossetto; Carlo De Santi; Antonio Stocco; O. Hilt; E. Bahat-Treidel; J. Wuerfl; F. Rampazzo; G. Meneghesso; E. Zanoni
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InGaN power laser chips in a novel 50W multi-die package
Author(s): Andreas Loeffler; Christoph Eichler; Jens Mueller; Sven Gerhard; Bernhard Stojetz; Soenke Tautz; Clemens Vierheilig; Jelena Ristic; Adrian Avramescu; Markus Horn; Thomas Hager; Christoph Walter; Thomas Dobbertin; Harald Koenig; Uwe Strauss
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Advances in single mode and high power AlGaInN laser diode technology for systems applications
Author(s): Stephen P. Najda; Piotr Perlin; Tadek Suski; Lujca Marona; Michal Boćkowski; Mike Leszczyński; Przemek Wisniewski; Robert Czernecki; Robert Kucharski; Grzegorz Targowski; Julita Smalc-Koziorowska; Szymon Stanczyk; Scott Watson; Antony E. Kelly
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Ultralow threshold electrically injected AlGaN nanowire ultraviolet lasers on Si
Author(s): K. H. Li; X. Liu; S. Zhao; Q. Wang; Z. Mi
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Status and future of GaN-based vertical-cavity surface-emitting lasers
Author(s): Daniel F. Feezell
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High-power UV-B LEDs with long lifetime
Author(s): Jens Rass; Tim Kolbe; Neysha Lobo-Ploch; Tim Wernicke; Frank Mehnke; Christian Kuhn; Johannes Enslin; Martin Guttmann; Christoph Reich; Anna Mogilatenko; Johannes Glaab; Christoph Stoelmacker; Mickael Lapeyrade; Sven Einfeldt; Markus Weyers; Michael Kneissl
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Progress of high-power deep-ultraviolet LEDs
Author(s): A. Fujioka; K. Asada; H. Yamada; T. Ohtsuka; T. Ogawa; T. Kosugi; D. Kishikawa; T. Mukai
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High-efficiency UV LEDs on sapphire
Author(s): Max Shatalov; Rakesh Jain; Alex Dobrinsky; Wenhong Sun; Yuri Bilenko; Jinwei Yang; Michael Shur; Remis Gaska
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Current spreading in UV-C LEDs emitting at 235 nm
Author(s): Mickael Lapeyrade; Florian Eberspach; Johannes Glaab; Neysha Lobo-Ploch; Christoph Reich; Christian Kuhn; Martin Guttmann; Tim Wernicke; Frank Mehnke; Sven Einfeldt; Arne Knauer; Markus Weyers; Michael Kneissl
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Study of efficiency droop in InGaN/GaN light emitting diodes with V-shape pits
Author(s): Chiao-Yun Chang; Heng Li; Tien-Chang Lu
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Efficiency droop in nitride LEDs revisited: impact of excitonic recombination processes
Author(s): A. Hangleiter; Torsten Langer; Marina Gerhard; Dimitry Kalincev; A. Kruse; Heiko Bremers; U. Rossow; M. Koch
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Bipolar Monte Carlo simulation of electrons and holes in III-N LEDs
Author(s): Pyry Kivisaari; Toufik Sadi; Jani Oksanen; Jukka J. Tulkki
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Semi/non-polar nitride quantum wells for high-efficient light emitters
Author(s): Mitsuru Funato; Yoichi Kawakami
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Spatial variations of optical properties of semipolar InGaN quantum wells
Author(s): Saulius Marcinkevičius; Kristina Gelžinytė; Ruslan Ivanov; Yuji Zhao; Shuji Nakamura; Steven P. DenBaars; James S. Speck
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Investigation of facet-dependent InGaN growth for core-shell LEDs
Author(s): Ionut Girgel; Paul R. Edwards; Emmanuel Le Boulbar; Duncan W.E. Allsopp; Robert W. Martin; Philip A. Shields
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InGaN LEDs prepared on beta-Ga2O3 (-201) substrates
Author(s): Kazuyuki Iizuka; Yoshikatsu Morishima; Akito Kuramata; Yu-Jiun Shen; Chang-Yu Tsai; Ying-Yong Su; Gavin Liu; Ta-Cheng Hsu; J. H. Yeh
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Deep level transient spectroscopy on light-emitting diodes based on (In,Ga)N/GaN nanowire ensembles
Author(s): M. Musolino; M. Meneghini; Laerte Scarparo; Carlo De Santi; A. Tahraoui; L. Geelhaar; E. Zanoni; H. Riechert
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X-ray diffraction study of A- plane non-polar InN epilayer grown by MOCVD
Author(s): Matthieu Moret; Olivier Briot; Bernard Gil
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Vertical excitation profile in diffusion injected multi-quantum well light emitting diode structure
Author(s): L. Riuttanen; P. Kivisaari; O. Svensk; T. Vasara; P. Myllys; J. Oksanen; S. Suihkonen
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Numerical analysis on the effect of electron blocking layer in 365-nm ultraviolet light-emitting diodes
Author(s): Fang-Ming Chen; Jih-Yuan Chang; Yen-Kuang Kuo; Bing-Cheng Lin; Hao-Chung Kuo
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Nonradiative recombination mechanisms in InGaN/GaN light-emitting diodes analyzed by various device characterization techniques
Author(s): Dong-Soo Shin; Dong-Pyo Han; Dong-Guang Zheng; Chan-Hyoung Oh; Hyun-Sung Kim; Kyu-Sang Kim; Jong-In Shim
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Enhancement of optical and structural quality of semipolar (11-22) GaN by introducing nanoporous SiNx interlayers
Author(s): Morteza Monavarian; Sebastian Metzner; Natalia Izyumskaya; Marcus Müller; Serdal Okur; Fan Zhang; Nuri Can; Saikat Das; Vitaliy Avrutin; Ümit Özgür; Frank Bertram; Juergen Christen; Hadis Morkoç
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Enhancement of coherent acoustic phonons in InGaN multiple quantum wells
Author(s): Shopan D. Hafiz; Fan Zhang; Morteza Monavarian; Vitaliy Avrutin; Hadis Morkoç; Ümit Özgür
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Strong carrier localization in stacking faults in semipolar (11-22) GaN
Author(s): Serdal Okur; Morteza Monavarian; Saikat Das; Natalia Izyumskaya; Fan Zhang; Vitaliy Avrutin; Hadis Morkoç; Ümit Özgür
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Strong exciton-photon coupling in hybrid InGaN-based microcavities on GaN substrates
Author(s): Serdal Okur; Alexander Franke; Fan Zhang; Vitaliy Avrutin; Hadis Morkoç; Frank Bertram; Juergen Christen; Ümit Özgür
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Indium-incorporation efficiency in semipolar (11-22) oriented InGaN-based light emitting diodes
Author(s): Morteza Monavarian; Sebastian Metzner; Natalia Izyumskaya; Serdal Okur; Fan Zhang; Nuri Can; Saikat Das; Vitaliy Avrutin; Ümit Özgür; Frank Bertram; Jürgen Christen; Hadis Morkoç
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Active region dimensionality and quantum efficiencies of InGaN LEDs from temperature dependent photoluminescence transients
Author(s): Nuri Can; Serdal Okur; Morteza Monavarian; Fan Zhang; Vitaliy Avrutin; Hadis Morkoç; Ali Teke; Ümit Özgür
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