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PROCEEDINGS VOLUME 9051

Advances in Patterning Materials and Processes XXXI
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Volume Details

Volume Number: 9051
Date Published: 16 April 2014
Softcover: 67 papers (620) pages
ISBN: 9780819499745

Table of Contents
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Front Matter: Volume 9051
Author(s): Proceedings of SPIE
Novel non-chemically amplified (n-CARs) negative resists for EUVL
Author(s): Vikram Singh; V. S. V. Satyanarayana; Satinder K. Sharma; Subrata Ghosh; Kenneth E. Gonsalves
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Evaluation of vacancies in positive-tone non-chemically and chemically amplified EUV / EB resists: relationship between free-volume and LER
Author(s): Akihiro Oshima; Toru Hinata; Hirotaka Nakamura; Toshitaka Oka; Nagayasu Oshima; Brian E. O'Rourke; Ryoichi Suzuki; Masakazu Washio; Seiichi Tagawa
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Manufacturability improvements in EUV resist processing toward NXE:3300 processing
Author(s): Yuhei Kuwahara; Koichi Matsunaga; Takeshi Shimoaoki; Shinichiro Kawakami; Kathleen Nafus; Philippe Foubert; Anne-Marie Goethals; Satoru Shimura
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Investigation of interactions between metrology and lithography with a CD SEM simulator
Author(s): Mark D. Smith; Chao Fang; John J. Biafore; Alessandro Vaglio Pret; Stewart A. Robertson
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Assessing SEM contour based OPC models quality using rigorous simulation
Author(s): Francois Weisbuch; Aravind Samy Naranaya
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SEM simulation for 2D and 3D inspection metrology and defect review
Author(s): Shimon Levi; Ishai Schwartsband; Sergey Khristo; Yan Ivanchenko; Ofer Adan
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Chiral nanomaterial fabrication by means of on-edge lithography
Author(s): Kay Dietrich; Dennis Lehr; Oliver Puffky; Ernst-Bernhard Kley; Andreas Tünnermann
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Positive tone cross-linked resists based on photoacid inhibition of cross linking
Author(s): Richard A. Lawson; Jun Sung Chun; Mark Neisser; Laren M. Tolbert; Clifford L. Henderson
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Nanopatterning with tailored molecules
Author(s): Florian Wieberger; Tristan Kolb; Christian Neuber; Christopher K. Ober; Hans-Werner Schmidt
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Line width roughness reduction by rational design of photoacid generator for sub-millisecond laser post-exposure bake
Author(s): Jing Jiang; Michael O. Thompson; Christopher K. Ober
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Process optimization of templated DSA flows
Author(s): Roel Gronheid; Joost Bekaert; Vijaya-Kumar Murugesan Kuppuswamy; Nadia Vandenbroeck; Jan Doise; Yi Cao; Guanyang Lin; Safak Sayan; Doni Parnell; Mark Somervell
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An in-situ hard mask block copolymer approach for the fabrication of ordered, large scale, horizontally aligned, Si nanowire arrays on Si substrate
Author(s): Tandra Ghoshal; Ramsankar Senthamaraikannan; Matthew T. Shaw; Justin D. Holmes; Michael A. Morris
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Investigation of cross-linking poly(methyl methacrylate) as a guiding material in block copolymer directed self-assembly
Author(s): Robert Seidel; Paulina Rincon Delgadillo; Abelardo Ramirez-Hernandez; Hengpeng Wu; Youngjun Her; Jian Yin; Paul Nealey; Juan de Pablo; Roel Gronheid
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Novel surface treatment materials for aligning block-co-polymer in directed self-assembly processes
Author(s): Yasunobu Someya; Hiroyuki Wakayama; Takafumi Endo; Rikimaru Sakamoto
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Directed self-assembly process integration: Fin patterning approaches and challenges
Author(s): Safak Sayan; B. T. Chan; Roel Gronheid; Frieda Van Roey; Min-Soo Kim; Lance Williamson; Paul Nealey
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High-volume manufacturing equipment and processing for directed self-assembly applications
Author(s): Mark Somervell; Takashi Yamauchi; Soichiro Okada; Tadatoshi Tomita; Takanori Nishi; Etsuo Iijima; Takeo Nakano; Takumi Ishiguro; Seiji Nagahara; Hiroyuki Iwaki; Makiko Dojun; Mariko Ozawa; Koichi Yatsuda; Toshikatsu Tobana; Ainhoa Romo Negreira; Doni Parnell; Shinchiro Kawakami; Makoto Muramatsu; Benjamen Rathsack; Kathleen Nafus; Jean-Luc Peyre; Takahiro Kitano
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An in situ analysis of resist dissolution in alkali-based and organic solvent-based developers using high speed atomic force microscopy
Author(s): Julius Joseph Santillan; Motoharu Shichiri; Toshiro Itani
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In-situ analysis of defect formation in coat develop track process
Author(s): Masahiko Harumoto; Harold Stokes; Osamu Tamada; Tadashi Miyagi; Koji Kaneyama; Charles Pieczulewski; Masaya Asai
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Methods of controlling cross-linking in negative-tone resists
Author(s): Richard A. Lawson; Jun Sung Chun; Mark Neisser; Laren M. Tolbert; Clifford L. Henderson
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How to design a good photoresist solvent package using solubility parameters and high-throughput research
Author(s): Michael P. Tate; Charlotte Cutler; Mike Sakillaris; Michael Kaufman; Thomas Estelle; Carol Mohler; Chris Tucker; Jim Thackeray
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ICE: Ionic contrast enhancement for organic solvent negative tone develop
Author(s): Linda K. Sundberg; Gregory M. Wallraff; Luisa D. Bozano; Hoa D. Truong; Martha I. Sanchez; Dario L. Goldfarb; Karen E. Petrillo; William D. Hinsberg
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Introduction of an innovative water based photoresist stripping process using intelligent fluids
Author(s): Matthias Rudolph; Xaver Thrun; Dirk Schumann; Anita Hoehne; Silvio Esche; Christoph Hohle
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Reduction of image placement error on photomask-making for multiple patterning
Author(s): Takahiro Hiromatsu; Toru Fukui; Kenta Tsukagoshi; Kazunori Ono; Masahiro Hashimoto
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Robust complementary technique with multiple-patterning for sub-10 nm node device
Author(s): Kenichi Oyama; Shohei Yamauchi; Sakurako Natori; Arisa Hara; Masatoshi Yamato; Hidetami Yaegashi
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Advanced develop processes for reducing defects related with e-beam resists
Author(s): Byunghoon Lee; Sung-Jae Han; Se-Gun Moon; Hee Bom Kim
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Recent progress on multiple-patterning process
Author(s): Hidetami Yaegashi; Kenichi Oyama; Arisa Hara; Sakurako Natori; Shohei Yamauchi; Masatoshi Yamato
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Novel and cost-effective multiple patterning technology by means of invisible SiOxNy hardmask
Author(s): Linus Jang; Young Joon Moon; Ryoung-Han Kim; Christopher Bencher; Huixiong Dai; Peng Xie; Daniel L. Diehl; Yong Cao; Wilson Zeng; Christopher S. Ngai
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Manufacturability considerations for DSA
Author(s): Richard A. Farrell; Erik R. Hosler; Gerard M. Schmid; Ji Xu; Moshe E. Preil; Vinayak Rastogi; Nihar Mohanty; Kaushik Kumar; Michael J. Cicoria; David R. Hetzer; Anton DeVilliers
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Formation of sub-7 nm feature size PS-b-P4VP block copolymer structures by solvent vapour process
Author(s): Atul Chaudhari; Tandra Ghoshal; Matthew T. Shaw; Cian Cummins; Dipu Borah; Justin D. Holmes; Michael A. Morris
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New materials for directed self-assembly for advanced patterning
Author(s): Jieqian Zhang; Janet Wu; Mingqi Li; Valeriy V. Ginzburg; Jeffrey D. Weinhold; Michael B. Clark; Peter Trefonas; Phillip D. Hustad
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Extending lithography with advanced materials
Author(s): Douglas J. Guerrero
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Spin-on organic hardmask for topo-patterned substrate
Author(s): Kazuhiko Komura; Yoshi Hishiro; Goji Wakamatsu; Yoshio Takimoto; Tomoki Nagai; Tooru Kimura; Yoshikazu Yamaguchi; Tsutomu Shimokawa; Greg Breyta; Noel Arellano; Srinivasan Balakrishnan; Luisa D. Bozano; Ananthakrishnan Sankaranarayanan; Krishna M. Bajjuri; Daniel P. Sanders; Carl E. Larson; Anuja DeSilva; Martin Glodde
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EUV lithography and etching performance enhancement by EUV sensitive Si hard mask (EUV Si-HM) for 1Xnm hp generation
Author(s): Wataru Shibayama; Shuhei Shigaki; Noriaki Fujitani; Ryuji Onishi; Rikimaru Sakamoto
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A chemical underlayer approach to mitigate shot noise in EUV contact hole patterning
Author(s): Jin Li; Ide Yasuaki; Shigemasa Nakasugi; Motoki Misumi; Hiroshi Yanagita; Fumihiro Suzuki; Georg Pawlowski; JoonYeon Cho; Huirong Yao; Takanori Kudo; Munirathna Padmanaban; YoungJun Her; Yi Cao
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Anti-spacer double patterning
Author(s): Michael Hyatt; Karen Huang; Anton DeVilliers; Mark Slezak; Zhi Liu
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Optimization of fullerene-based negative tone chemically amplified fullerene resist for extreme ultraviolet lithography
Author(s): A. Frommhold; D. X. Yang; A. McClelland; X. Xue; Y. Ekinci; R. E. Palmer; A. P. G. Robinson
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Patterning chemistry of HafSOx resist
Author(s): Jenn M. Amador; Shawn R. Decker; Stefan E. Lucchini; Rose E. Ruther; Douglas A. Keszler
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EUV resists based on tin-oxo clusters
Author(s): Brian Cardineau; Ryan Del Re; Hashim Al-Mashat; Miles Marnell; Michaela Vockenhuber; Yasin Ekinci; Chandra Sarma; Mark Neisser; Daniel A. Freedman; Robert L. Brainard
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Inhomogeneity of PAGs in resist film studied by molecular-dynamics simulations for EUV lithography
Author(s): Minoru Toriumi; Toshiro Itani
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Innovative solutions on 193 immersion-based self-aligned multiple patterning
Author(s): Sakurako Natori; Shohei Yamauchi; Arisa Hara; Masatoshi Yamato; Kenichi Oyama; Hidetami Yaegashi
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Wet particle source identification and reduction using a new filter cleaning process
Author(s): Toru Umeda; Akihiko Morita; Hideki Shimizu; Shuichi Tsuzuki
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Adsorption characteristics of lithography filters in various solvents using application-specific ratings
Author(s): Toru Umeda; Shuichi Tsuzuki
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Removal of highly crosslinked resists and hybrid polymers for single micro parts fabrication and nanoimprint stamp rework
Author(s): Anja Voigt; Rainer Engelke; Gisela Ahrens; Franziska Bullerjahn; Arne Schleunitz; Jan J. Klein; Gabi Grützner
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Characterization of chemically amplified resists for electron beam lithography
Author(s): Tomoharu Yamazaki; Hiroki Yamamoto; Takahiro Kozawa; Wen-Chuan Wang
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Improved adhesion of novolac and epoxy based resists by cationic organic materials on critical substrates for high volume patterning applications
Author(s): Anja Voigt; Gisela Ahrens; Marina Heinrich; Andrew Thompson; Gabi Gruetzner
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Spin on lithographic resist trim process optimization and process window evaluation
Author(s): Christos F. Karanikas; J. Christopher Taylor; Naveen Vaduri; Tafsirul Islam
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Modeling acid transport in chemically amplified resist films
Author(s): Abhijit A. Patil; Manolis Doxastakis; Gila E. Stein
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Deprotonation mechanism of ionized poly(4-hydroxystyrene)
Author(s): Toshihiko Susa; Kazumasa Okamoto; Takuya Ishida; Hiroki Yamamoto; Takahiro Kozawa; Ryoko Fujiyoshi; Kikuo Umegaki
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Numerical analysis for resist profile after thermal process in display manufacturing
Author(s): Vitaliy Domnenko; Hans-Jürgen Stock; Sangmin Shin; Jonghyoek Ryu; Sung Won Choi; Hyunwoo Cho; Eun-Soo Jeong; Jung-Hoe Choi
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Photoresist analysis to investigate LWR generation mechanism
Author(s): Kenji Mochida; Shinichi Nakamura; Tooru Kimura; Kazuki Kawai; Yoshihiko Taguchi; Naoki Man; Hideki Hashimoto
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Decreasing curing temperature of spin-on dielectrics by using additives
Author(s): Jin Hee Bae; Kwen Woo Han; Eun Su Park; Hui Chan Yoon; Yoong Hee Na; Jin Woo Seo; Wan Hee Lim; Bo Sun Kim; Jun Young Jang; Younjin Cho
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Study of acid diffusion behaves form PAG by using top coat method
Author(s): Atsushi Sekiguchi; Yoko Matsumoto
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Fluidity dependence of deprotonation kinetics of chemically amplified resist
Author(s): Kazumasa Okamoto; Takuya Ishida; Hiroki Yamamoto; Takahiro Kozawa; Ryoko Fujiyoshi; Kikuo Umegaki
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Inorganic resist materials based on zirconium phosphonate for atomic force microscope lithography
Author(s): Mankyu Kang; Seonae Kim; JinHyuck Jung; Heebom Kim; Inkyun Shin; Chanuk Jeon; Haiwon Lee
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Organic-inorganic hybrid resists for EUVL
Author(s): Vikram Singh; Vishwanath Kalyani; V. S. V. Satyanarayana; Chullikkattil P. Pradeep; Subrata Ghosh; Satinder Sharma; Kenneth E. Gonsalves
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Development of spin-on-carbon hard mask for advanced node
Author(s): Takanori Kudo; M. Dalil Rahman; Douglas McKenzie; Clement Anyadiegwu; Sandra Doerrenbaecher; Wolfgang Zahn; Munirathna Padmanaban
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Effective resist profile control
Author(s): Chen-Yu Liu; Chien-Wei Wang; Chun-Ching Huang; Ching-Yu Chang; Yao-Ching Ku
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Study on resist performance of chemically amplified molecular resist based on noria derivative and calixarene derivative
Author(s): Hiroki Yamamoto; Hiroto Kudo; Takahiro Kozawa
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SRAF window improvement with under-coating layer
Author(s): Takahiro Hiromatsu; Toru Fukui; Kenta Tsukagoshi; Kazunori Ono; Masahiro Hashimoto
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Development of new xanthendiol derivatives applied to the negative-tone molecular resists for EB/EUVL
Author(s): Takashi Sato; Masako Yamakawa; Yumi Ochiai; Yu Okada; Takashi Makinoshima; Masaaki Takasuka; Masatoshi Echigo
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Chemical shrink materials and process for negative tone development (NTD) resist
Author(s): Yoshihiro Miyamoto; John Sagan; Munirathna Padmanaban; Georg Pawlowski; Tatsuro Nagahara
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Novel polymeric sulfonium photoacid generator and its application for chemically amplified photoresists
Author(s): Juan Liu; Yu Qiao; Liyuan Wang
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Evaluation of novel hydrophilic derivatives for chemically amplified EUV resists
Author(s): Hiroyuki Tanagi; Hiroyasu Tanaka; Shoichi Hayakawa; Kikuo Furukawa; Hiroki Yamamoto; Takahiro Kozawa
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ArF photoresist polymers with nitrogen or sulfone moieties for negative tone development process
Author(s): Dong-Gyun Kim; Su-Jee Kwon; Suk-Koo Hong; Joon Je Lee; Hyung Rae Lee; Hyo-jin Yun; Ji-Hoon Baik; Dohyuk Im; Eujean Jang; Jae-Woo Lee; Jae-Hyun Kim; Jong-Chan Lee
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Development of novel protecting derivatives for chemically amplified extreme ultraviolet resist
Author(s): Hiroyasu Tanaka; Hiroyuki Tanagi; Shoichi Hayakawa; Kikuo Furukawa; Hiroki Yamamoto; Takahiro Kozawa
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EUV resists comprised of main group organometallic oligomeric materials
Author(s): James Passarelli; Brian Cardineau; Ryan Del Re; Miriam Sortland; Michaela Vockenhuber; Yasin Ekinci; Chandra Sarma; Mark Neisser; Daniel A. Freedman; Robert L. Brainard
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Novel spin-on metal hardmask materials for filling applications
Author(s): Alberto D. Dioses; Venkata Chada; Elizabeth Wolfer; Edward Ng; Salem Mullen; Huirong Yao; JoonYeon Cho; Munirathna Padmanaban
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