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PROCEEDINGS VOLUME 9048

Extreme Ultraviolet (EUV) Lithography V
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Volume Details

Volume Number: 9048
Date Published: 25 April 2014
Softcover: 98 papers (922) pages
ISBN: 9780819499714

Table of Contents
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Front Matter: Volume 9048
Author(s): Proceedings of SPIE
EUV resists towards 11nm half-pitch
Author(s): Yasin Ekinci; Michaela Vockenhuber; Nassir Mojarad; Daniel Fan
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Investigation of novel inorganic resist materials for EUV lithography
Author(s): Marie E. Krysak; James M. Blackwell; Steve E. Putna; Michael J. Leeson; Todd R. Younkin; Shane Harlson; Kent Frasure; Florian Gstrein
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Stochastic effects in fabrication of 11nm line-and-space patterns using extreme ultraviolet lithography
Author(s): Takahiro Kozawa; Julius Joseph Santillan; Toshiro Itani
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Understanding EUV resist mottling leading to better resolution and linewidth roughness
Author(s): James Thackeray; James Cameron; Vipul Jain; Paul LaBeaume; Suzanne Coley; Owendi Ongayi; Mike Wagner; John Biafore; Jun Sung Chun
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Comparison of EUV patterning performance between PTD and NTD for 1Xnm DRAM
Author(s): Changil Oh; Hyungsuk Seo; Eunjoo Park; Junghyung Lee; Cheolkyu Bok; Wontaik Kwon; Sungki Park
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Impact of stochastic effects on EUV printability limits
Author(s): P. De Bisschop; J. Van de Kerkhove; J. Mailfert; A. Vaglio Pret; J. Biafore
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EUV stochastic noise analysis and LCDU mitigation by etching on dense contact-hole array patterns
Author(s): Seo Min Kim; Sunyoung Koo; Jun-Taek Park; Chang-Moon Lim; Myoungsoo Kim; Chang-Nam Ahn; Anita Fumar-Pici; Alek C. Chen
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LPP EUV source readiness for NXE 3300B
Author(s): David C. Brandt; Igor V. Fomenkov; Nigel R. Farrar; Bruno La Fontaine; David W. Myers; Daniel J. Brown; Alex I. Ershov; Norbert R. Böwering; Daniel J. Riggs; Robert J. Rafac; Silvia De Dea; Rudy Peeters; Hans Meiling; Noreen Harned; Daniel Smith; Alberto Pirati; Robert Kazinczi
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Sub-hundred Watt operation demonstration of HVM LPP-EUV source
Author(s): Hakaru Mizoguchi; Hiroaki Nakarai; Tamotsu Abe; Takeshi Ohta; Krzysztof M. Nowak; Yasufumi Kawasuji; Hiroshi Tanaka; Yukio Watanabe; Tsukasa Hori; Takeshi Kodama; Yutaka Shiraishi; Tatsuya Yanagida; Tsuyoshi Yamada; Taku Yamazaki; Shinji Okazaki; Takashi Saitou
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Highly-efficient high-power pulsed CO2 laser characterized by transverse-flow laser amplifiers
Author(s): Yoichi Tanino; Jun-ichi Nishimae; Tatsuya Yamamoto; Taichiro Tamida; Koji Funaoka; Shuichi Fujikawa
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Spectral purity enhancement for the EUV lithography systems by suppressing UV reflection from multilayers
Author(s): Qiushi Huang; Meint de Boer; Jonathan Barreaux; Daniel Mathijs Paardekooper; Toine van den Boogaard; Robbert van de Kruijs; Erwin Zoethout; Eric Louis; Fred Bijkerk
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Production of EUV mask blanks with low killer defects
Author(s): Alin O. Antohe; Patrick Kearney; Milton Godwin; Long He; Arun John Kadaksham; Frank Goodwin; Al Weaver; Alan Hayes; Steve Trigg
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Mitigation of EUV mask blank substrate pit and scratch defects by Accelerated Neutral Atom Beam (ANAB) processing
Author(s): M. Walsh; K. Chau; S. Kirkpatrick; R. Svrluga; B. Piwczyk; F. Goodwin; D. Balachandran
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Durability of Ru-based EUV masks and the improvement
Author(s): Suyoung Lee; Jungyoup Kim; Soo-Wan Koh; Ilyong Jang; Jaehyuck Choi; Hyungho Ko; Hwan-Seok Seo; Seong-Sue Kim; Byung Gook Kim; Chan-Uk Jeon
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Study of alternative capping and absorber layers for extreme ultraviolet (EUV) masks for sub-16nm half-pitch nodes
Author(s): Abbas Rastegar; Matthew House; Ruahi Tian; Thomas Laursen; Alin Antohe; Patrick Kearney
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Evaluation of mask repair strategies via focused electron, helium, and neon beam induced processing for EUV applications
Author(s): C. M. Gonzalez; W. Slingenbergh; R. Timilsina; J.-H. Noh; M. G. Stanford; B. B. Lewis; K. L. Klein; T. Liang; J. D. Fowlkes; P. D. Rack
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Effect of cleaning and storage on quartz substrate adhesion and surface energy
Author(s): Dave Balachandran; Arun John
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Direct measurement of carbon contamination topography on patterned EUV masks
Author(s): Yu-Jen Fan; Thomas Murray; Frank Goodwin; Dominic Ashworth; Gregory Denbeaux
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Particle control challenges in process chemicals and ultra-pure water for sub-10nm technology nodes
Author(s): Abbas Rastegar; Martin Samayoa; Matthew House; Hüseyin Kurtuldu; Sang-Kee Eah; Lauren Morse; Jenah Harris-Jones
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EUV source-mask optimization for 7nm node and beyond
Author(s): Xiaofeng Liu; Rafael Howell; Stephen Hsu; Kaiyu Yang; Keith Gronlund; Frank Driessen; Hua-Yu Liu; Steven Hansen; Koen van Ingen Schenau; Thijs Hollink; Paul van Adrichem; Kars Troost; Jörg Zimmermann; Oliver Schumann; Christoph Hennerkes; Paul Gräupner
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EUV overlay strategy for improving MMO
Author(s): Byoung-Hoon Lee; Inhwan Lee; Yoonsuk Hyun; SeoMin Kim; Chang-Moon Lim; Myoung Soo Kim; Sung-ki Park
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Prospects of DUV OoB suppression techniques in EUV lithography
Author(s): Chang-Min Park; Insung Kim; Sang-Hyun Kim; Dong-Wan Kim; Myung-Soo Hwang; Soon-Nam Kang; Cheolhong Park; Hyun-Woo Kim; Jeong-Ho Yeo; Seong-Sue Kim
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Feasibility of compensating for EUV field edge effects through OPC
Author(s): Chris Maloney; James Word; Germain L. Fenger; Ardavan Niroomand; Gian F. Lorusso; Rik Jonckheere; Eric Hendrickx; Bruce W. Smith
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Comprehensive defect avoidance framework for mitigating EUV mask defects
Author(s): Abde Ali Kagalwalla; Puneet Gupta
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Pattern fidelity verification for logic design in EUV lithography
Author(s): Minoru Sugawara; Eric Hendrickx; Vicky Philipsen; Chris Maloney; Germain Fenger
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EUV OPC modeling and correction requirements
Author(s): Tamer H. Coskun; Tom Wallow; Gek Soon Chua; Keith Standiford; Craig Higgins; Yi Zou
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Actinic review of EUV masks: first results from the AIMS EUV system integration
Author(s): Markus R. Weiss; Dirk Hellweg; Jan Hendrik Peters; Sascha Perlitz; Anthony Garetto; Michael Goldstein
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Actinic mask imaging: recent results and future directions from the SHARP EUV microscope
Author(s): Kenneth A. Goldberg; Markus P. Benk; Antoine Wojdyla; Iacopo Mochi; Senajith B. Rekawa; Arnaud P. Allezy; Michael R. Dickinson; Carl W. Cork; Weilun Chao; Daniel J. Zehm; James B. Macdougall; Patrick P. Naulleau; Anne Rudack
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EUV patterned mask inspection with an advanced projection electron microscope (PEM) system
Author(s): Ryoichi Hirano; Susumu Iida; Tsuyoshi Amano; Tsuneo Terasawa; Hidehiro Watanabe; Masahiro Hatakeyama; Takeshi Murakami; Kenji Terao
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Zernike phase contrast microscope for EUV mask inspection
Author(s): Yow-Gwo Wang; Ryan Miyakawa; Andrew Neureuther; Patrick Naulleau
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A novel concept for actinic EUV mask review tool using a scanning lensless imaging method at the Swiss Light Source (Withdrawal Notice)
Author(s): Sangsul Lee; Manuel Guizar-Sicairos; Yasin Ekinci
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E-beam inspection of EUV mask defects: To etch or not to etch?
Author(s): Ravi Bonam; Hung-Yu Tien; Chanro Park; Scott Halle; Fei Wang; Daniel Corliss; Wei Fang; Jack Jau
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High-radiance LDP source for mask inspection application
Author(s): Yusuke Teramoto; Bárbara Santos; Guido Mertens; Ralf Kops; Margarete Kops; Felix Küpper; Gota Niimi; Hironobu Yabuta; Akihisa Nagano; Takuma Yokoyama; Masaki Yoshioka; Takahiro Shirai; Noritaka Ashizawa; Hiroto Sato; Kiyotada Nakamura; Kunihiko Kasama
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Enhancing the performance of LPP sources for EUV and BEUV lithography
Author(s): Tatyana Sizyuk; Ahmed Hassanein
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Contribution of EUV resist components to the non-cleanable contaminations
Author(s): Eishi Shiobara; Toshiya Takahashi; Norihiko Sugie; Yukiko Kikuchi; Isamu Takagi; Kazuhiro Katayama; Hiroyuki Tanaka; Soichi Inoue; Takeo Watanabe; Tetsuro Harada; Hiroo Kinoshita
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Resist outgassing contamination on EUV multilayer mirror analogues
Author(s): Diego Alvarado; Yudhishthir Kandel; Jaewoong Sohn; Tonmoy Chakraborty; Dominic Ashworth; Gregory Denbeaux
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Relationship between resist outgassing and EUV witness sample contamination in NXE outgas qualification using electrons and EUV photons
Author(s): I. Pollentier; A. Tirumala Venkata; R. Gronheid
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Increasing sensitivity of oxide nanoparticle photoresists
Author(s): Souvik Chakrabarty; Chandra Sarma; Li Li; Emmanuel P. Giannelis; Christopher K. Ober
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Novel EUV resist materials for 16nm half pitch and EUV resist defects
Author(s): Motohiro Shiratani; Takehiko Naruoka; Ken Maruyama; Ramakrishnan Ayothi; Yoshi Hishiro; Kenji Hoshiko; Andreia Santos; Xavier Buch; Tooru Kimura
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Novel EUV resist materials design for 14nm half pitch and below
Author(s): Hideaki Tsubaki; Shinji Tarutani; Toru Fujimori; Hiroo Takizawa; Takahiro Goto
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Electron and hole transfer in anion-bound chemically amplified resists used in extreme ultraviolet lithography
Author(s): Yoshitaka Komuro; Hiroki Yamamoto; Yoshiyuki Utsumi; Katsumi Ohmori; Takahiro Kozawa
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Comparative analysis of shot noise in EUV and e-beam lithography
Author(s): Suchit Bhattarai; Weilun Chao; Andrew R. Neureuther; Patrick P. Naulleau
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Improved measurement capabilities at the NIST EUV reflectometry facility
Author(s): C. Tarrio; S. Grantham; T. A. Germer; J. Rife; T. B. Lucatorto; M. Kriese; Y. Platonov; L. Jiang; J. Rodriguez
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EUV lithography: NXE platform performance overview
Author(s): Rudy Peeters; Sjoerd Lok; Joerg Mallman; Martijn van Noordenburg; Noreen Harned; Peter Kuerz; Martin Lowisch; Eelco van Setten; Guido Schiffelers; Alberto Pirati; Judon Stoeldraijer; David Brandt; Nigel Farrar; Igor Fomenkov; Herman Boom; Hans Meiling; Ron Kool
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Projection optics for EUVL micro-field exposure tools with 0.5 NA
Author(s): Holger Glatzel; Dominic Ashworth; Dan Bajuk; Matt Bjork; Mark Bremer; Mark Cordier; Kevin Cummings; Luc Girard; Michael Goldstein; Eric Gullikson; Samuel Hardy; Russ Hudyma; James Kennon; Robert Kestner; Lou Marchetti; Keyvan Nouri; Patrick Naulleau; Daniel Pierce; Regina Soufli; Eberhard Spiller; Yogesh Verma
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Across scanner platform optimization to enable EUV lithography at the 10-nm logic node
Author(s): Jan Mulkens; Jaap Karssenberg; Hannah Wei; Marcel Beckers; Leon Verstappen; Stephen Hsu; Guangqin Chen
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Update on the SEMATECH 0.5 NA Extreme-Ultraviolet Lithography (EUVL) Microfield Exposure Tool (MET)
Author(s): Kevin Cummings; Dominic Ashworth; Mark Bremer; Rodney Chin; Yu-Jen Fan; Luc Girard; Holger Glatzel; Michael Goldstein; Eric Gullikson; Jim Kennon; Bob Kestner; Lou Marchetti; Patrick Naulleau; Regina Soufli; Johannes Bauer; Markus Mengel; Joachim Welker; Michael Grupp; Erik Sohmen; Stefan Wurm
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Progress on EUV pellicle development
Author(s): Carmen Zoldesi; Kursat Bal; Brian Blum; Guus Bock; Derk Brouns; Florian Dhalluin; Nina Dziomkina; Juan Diego Arias Espinoza; Joost de Hoogh; Silvester Houweling; Maarten Jansen; Mohammad Kamali; Alain Kempa; Ronald Kox; Robert de Kruif; Jorge Lima; Yang Liu; Henk Meijer; Hans Meiling; Ijen van Mil; Marco Reijnen; Luigi Scaccabarozzi; Daniel Smith; Beatrijs Verbrugge; Laurens de Winters; Xugang Xiong; John Zimmerman
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Driving the industry towards a consensus on high numerical aperture (high-NA) extreme ultraviolet (EUV)
Author(s): Patrick A. Kearney; Obert Wood; Eric Hendrickx; Greg McIntyre; Soichi Inoue; Frank Goodwin; Stefan Wurm; Jan van Schoot; Winfried Kaiser
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Integration of an EUV metal layer: a 20/14nm demo
Author(s): Craig Higgins; Erik Verduijn; Xiang Hu; Liang Wang; Mandeep Singh; Jerome Wandell; Sohan Mehta; Jean Raymond Fakhoury; Mark Zaleski; Yi Zou; Hui Peng Koh; Pawitter Mangat
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The economic impact of EUV lithography on critical process modules
Author(s): Arindam Mallik; Naoto Horiguchi; Jürgen Bömmels; Aaron Thean; Kathy Barla; Geert Vandenberghe; Kurt Ronse; Julien Ryckaert; Abdelkarim Mercha; Laith Altimime; Diederik Verkest; An Steegen
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EUV source modeling
Author(s): S. Kulkarni; I. Golovkin; J. MacFarlane
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A study of the effect of pellicle support structures on aerial-image quality in EUV lithography by rigorous electromagnetic simulation
Author(s): Michael S. Yeung; Eytan Barouch; Hye-Keun Oh
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Emission properties of tin droplets laser-produced-plasma light sources
Author(s): Hong Chen; Xinbing Wang; Duluo Zuo; Peixiang Lu; Haihong Zhu; Tao Wu
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Design and synthesis of novel resist materials for EUVL
Author(s): V. S. V. Satyanarayana; Vikram Singh; Subrata Ghosh; Satinder Sharma; Kenneth E. Gonsalves
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Imaging performance of attenuated phase-shift mask using coherent scattering microscope
Author(s): Jae Uk Lee; SeeJun Jeong; Seong Chul Hong; Seung Min Lee; Jinho Ahn
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Optimization of processing parameters and metrology for novel NCA negative resists for NGL
Author(s): Vikram Singh; V. S. V. Satyanarayana; Felipe Kessler; Francine R. Scheffer; Daniel E. Weibel; Satinder K. Sharma; Subrata Ghosh; Kenneth E. Gonsalves
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SEMATECH's cycles of learning test for EUV photoresist and its applications for process improvement
Author(s): Jun Sung Chun; Shih-Hui Jen; Karen Petrillo; Cecilia Montgomery; Dominic Ashworth; Mark Neisser; Takashi Saito; Lior Huli; David Hetzer
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Improvement of defect mitigation with EUV actinic blank inspection prototype for 16 nm hp
Author(s): Tetsunori Murachi; Tsuyoshi Amano; Tomohiro Suzuki; Hiroki Miyai
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Experimental verification of the effect of phase defect shape on ABI signal intensity
Author(s): Noriaki Takagi; Tsuneo Terasawa; Yukiyasu Arisawa
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Repetitive operation of counter-facing plasma focus device: toward a practical light source for EUV lithography
Author(s): Tatsuya Sodekoda; Hajime Kuwabara; Masashi Masuda; Shijia Liu; Kouki Kanou; Kenta Kawaguchi; Kazuhiko Horioka
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At wavelength observation of phase defect embedded in EUV mask using microscope technique
Author(s): Tsuneo Terasawa; Tsuyoshi Amano; Takeshi Yamane; Hidehiro Watanabe; Mitsunori Toyoda; Tetsuo Harada; Takeo Watanabe; Hiroo Kinoshita
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Observation of phase defect on extreme ultraviolet mask using an extreme ultraviolet microscope
Author(s): Tsuyoshi Amano; Tsuneo Terasawa; Hidehiro Watanabe; Mitsunori Toyoda; Tetsuo Harada; Takeo Watanabe; Hiroo Kinosihta
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EUV resist dissolution optimization for CD uniformity and defect control in coat develop track process
Author(s): Masahiko Harumoto; Harold Stokes; Yan Thouroude; Osamu Tamada; Tadashi Miyagi; Koji Kaneyama; Charles Pieczulewski; Masaya Asai
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Effect of defects on extreme ultraviolet pellicle
Author(s): In-Seon Kim; Guk-Jin Kim; Michael Yeung; Eytan Barouch; Mun-Ja Kim; Seong-Sue Kim; Ji-Won Kim; Hye-Keun Oh
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Evaluations of negative tone development resist and process for EUV lithography
Author(s): Toshiya Takahashi; Noriaki Fujitani; Toshiro Itani
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Aerial image of mesh supported extreme ultraviolet pellicle
Author(s): Ki-ho Ko; Guk-Jin Kim; Michael Yeung; Eytan Barouch; Mun-Ja Kim; Seung-Sue Kim; Hye-Keun Oh
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Super-flat wafer chucks: from simulation and testing to a complete 300mm wafer chuck with low wafer deformation between pins
Author(s): Renate Müller; Kanstantin Afanasiev; Marcel Ziemann; Volker Schmidt
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Designing extreme-ultraviolet lithographic objective for 11 nm node
Author(s): Zhen Cao; Yanqiu Li; Fei Liu
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EUV resist simulation based on process parameters of pattern formation reaction
Author(s): Norihiko Sugie; Toshiro Itani; Takahiro Kozawa
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OBPL for the best solution to resist outgassing and out-of-band issues in EUVL toward 1Xnm hp
Author(s): Noriaki Fujitani; Rikimaru Sakamoto; Takafumi Endo; Hiroaki Yaguchi; Ryuji Onishi
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Temporal and spatial dynamics of a laser-produced plasma through a multiple Langmuir probe detector
Author(s): Nadia Gambino; Markus Brandstätter; Bob Rollinger; Reza S. Abhari
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Clean and stable LPP light source for HVM inspection applications
Author(s): Bob Rollinger; Nadia Gambino; Andrea Z. Giovannini; Luna S. Bozinova; Flori Alickaj; Konrad Hertig; Reza S. Abhari; Fariba Abreau
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Optimization of image-based aberration metrology for EUV lithography
Author(s): Zac Levinson; Germain Fenger; Andrew Burbine; Anthony R. Schepis; Bruce W. Smith
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Study of angular effects for optical systems into the EUV
Author(s): Andrew Burbine; Zac Levinson; Anthony Schepis; Bruce W. Smith
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Analysis of phase defect effect on contact hole pattern using a programmed phase defect in EUVL mask
Author(s): Yongdae Kim; Tsuneo Terasawa; Tsuyoshi Amano; Sunghyun Oh; Yoonsuk Hyun; Hidehiro Watanabe
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The factors affecting improvement sensitivity, CDU, and resolution in EUV resist
Author(s): Joonhee Han; Hyun Soon Lim; Jin Ho Kim; Sumi Choi; Jin Bong Shin; Chang Wan Bae; In Young Yoo; Bong Ha Shin; Eun Kyo Lee; Hyun Sang Joo; Dong Chul Seo; Jun Sung Chun
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193nm inspection of extreme ultraviolet mask absorber defect
Author(s): Guk-Jin Kim; In-Seon Kim; Michael Yeung; Chang-Moon Lim; Hye-Keun Oh
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Aerial image deformation caused by various defects of EUV pellicles
Author(s): Sung-Gyu Lee; Michael Yeung; Eytan Barouch; Mun-Ja Kim; Seong-Sue Kim; Hye-Keun Oh
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Correlation study on resist outgassing between EUV and e-beam irradiation
Author(s): Yukiko Kikuchi; Kazuhiro Katayama; Isamu Takagi; Norihiko Sugie; Toshiya Takahashi; Eishi Shiobara; Hiroyuki Tanaka; Soichi Inoue; Takeo Watanabe; Tetsuo Harada; Hiroo Kinoshita
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Predicting LER PSD caused by mask roughness using a mathematical model
Author(s): Rene A. Claus; Andrew R. Neureuther; Laura Waller; Patrick P. Naulleau
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High-resist sensitization by pattern and flood combination lithography
Author(s): Seiichi Tagawa; Akihiro Oshima; Satoshi Enomoto; C. Q. Dinh
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Evaluation of EUV resist performance below 20nm CD using helium ion lithography
Author(s): Diederik Maas; Emile van Veldhoven; Anja van Langen-Suurling; Paul F.A. Alkemade; Sander Wuister; Rik Hoefnagels; Coen Verspaget; Jeroen Meessen; Timon Fliervoet
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TNO reticle handling test platform
Author(s): W. E. Crowcombe; C. L. Hollemans; E. C. Fritz; J. C. J. van der Donck; N. B. Koster
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Stochastic and systematic patterning failure mechanisms for contact-holes in EUV lithography: Part 2
Author(s): Alessandro Vaglio Pret; Peter De Bisschop; Mark D. Smith; John J. Biafore
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Laser produced plasma light source development for HVM
Author(s): Igor V. Fomenkov; David C. Brandt; Nigel R. Farrar; Bruno La Fontaine; David W. Myers; Daniel J. Brown; Alex I. Ershov; Norbert R. Böwering; Daniel J. Riggs; Robert J. Rafac; Silvia De Dea; Michael Purvis; Rudy Peeters; Hans Meiling; Noreen Harned; Daniel Smith; Robert Kazinczi; Alberto Pirati
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Limitations of resist-based characterization of EUV mask surface roughness
Author(s): Suchit Bhattarai; Andrew R. Neureuther; Patrick P. Naulleau
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Clear sub-resolution assist features for EUV
Author(s): Martin Burkhardt; Greg McIntyre; Ralph Schlief; Lei Sun
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Ptychographic wavefront sensor for high-NA EUV inspection and exposure tools
Author(s): Antoine Wojdyla; Ryan Miyakawa; Patrick Naulleau
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AIS wavefront sensor: a robust optical test of exposure tools using localized wavefront curvature
Author(s): Ryan Miyakawa; Xibin Zhou; Michael Goldstein; Dominic Ashworth; Kevin Cummings; Yu-Jen Fan; Yashesh Shroff; Greg Denbeaux; Yudhi Kandel; Patrick Naulleau
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High speed EUV using post processing and self-aligned double patterning as a speed enhancement technique
Author(s): Jerome Wandell; Anton deVilliers; Lior Huli; Serge Biesemans; Kathleen Nafus; Mike Carcasi; Jeff Smith; Dave Hetzer; Craig Higgins; Vinayak Rastogi; Erik Verduijn
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Development of an EUVL collector with infrared radiation suppression
Author(s): Michael Kriese; Yuriy Platonov; Bodo Ehlers; Licai Jiang; Jim Rodriguez; Ulrich Mueller; Jay Daniel; Shayna Khatri; Adam Magruder; Steven Grantham; Charles Tarrio; Thomas Lucatorto
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Deconstructing contact hole CD printing variability in EUV lithography
Author(s): D. Civay; T. Wallow; N. Doganaksoy; E. Verduijn; G. Schmid; P. Mangat
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Fast rigorous model for mask spectrum simulation and analysis of mask shadowing effects in EUV lithography
Author(s): Xiaolei Liu; Xiangzhao Wang; Sikun Li; Guanyong Yan; Andreas Erdmann
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At-wavelength observation of phase defect using focused lensless microscope
Author(s): Tetsuo Harada; Yusuke Tanaka; Tsuyoshi Amano; Youichi Usui; Takeo Watanabe; Hiroo Kinoshita
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Characterization of high-resolution HafSOx inorganic resists
Author(s): R. P. Oleksak; G. S. Herman
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Investigating printability of native defects on EUV mask blanks through simulations and experiments
Author(s): Mihir Upadhyaya; Vibhu Jindal; Henry Herbol; Il-Yong Jang; Hyuk Joo Kwon; Jenah Harris-Jones; Gregory Denbeaux
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Evaluating vacuum components for particle performance for EUV lithography
Author(s): Yashdeep Khopkar; Gregory Denbeaux; Vibhu Jindal
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