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PROCEEDINGS VOLUME 8986

Gallium Nitride Materials and Devices IX
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Softcover $105.00 $140.00

Volume Details

Volume Number: 8986
Date Published: 4 April 2014
Softcover: 36 papers (310) pages
ISBN: 9780819498991

Table of Contents
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Front Matter: Volume 8986
Author(s): Proceedings of SPIE
Large-area bow-free n+ GaN templates by HVPE for LEDs
Author(s): J. H. Leach; Y. Shishkin; K. Udwary; E. A. Preble; K. R. Evans
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Growth of bulk GaN crystal by Na flux method
Author(s): Yusuke Mori; Mamoru Imade; Mihoko Maruyama; Masashi Yoshimura
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Homoepitaxial growth of AlN layers using by metalorganic vapor phase epitaxy on freestanding AlN substrate
Author(s): Tomohiro Morishita; Motoaki Iwaya; Tetsuya Takeuchi; Satoshi Kamiyama; Isamu Akasaki
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Crystal quality improvement of semipolar (20-21) GaN on patterned sapphire substrates by in-situ deposited SiN mask
Author(s): Tobias Meisch; Maryam Alimoradi-Jazi; Benjamin Neuschl; Martin Klein; Ingo Tischer; Klaus Thonke; Ferdinand Scholz
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New directions in GaN material research: thinner and smaller
Author(s): Ge Yuan; Sung Hyun Park; Benjamin Leung; Jung Han
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The growth of hexagonal GaN-on-Si(100) using pulsed laser deposition
Author(s): Kun-Ching Shen; Ming-Chien Jiang; Hsu-Hung Hsueh; Yu-Cheng Kao; Ray-Hua Horng; Dong-Sing Wuu
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Polarized time-resolved photoluminescence measurements of m-plane AlGaN/GaN MQWs
Author(s): Daniel Rosales; B. Gil; T. Bretagnon; F. Zhang; S. Okur; M. Monavarian; N. Izioumskaia; V. Avrutin; Ü. Özgür; H. Morkoç; J. H. Leach
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Gain saturation in InGaN superluminescent diodes
Author(s): Anna Kafar; Szymon Stanczyk; Grzegorz Targowski; Tadek Suski; Piotr Perlin
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Point defect management in GaN by Fermi-level control during growth
Author(s): Marc P. Hoffmann; James Tweedie; Ronny Kirste; Zachary Bryan; Isaac Bryan; Michael Gerhold; Zlatko Sitar; Ramón Collazo
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Radiative and nonradiative decay of excitons in GaN nanowires
Author(s): Christian Hauswald; Timur Flissikowski; Holger T. Grahn; Lutz Geelhaar; Henning Riechert; Oliver Brandt
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Growth of GaN nanostructures with polar and semipolar orientations for the fabrication of UV LEDs
Author(s): Julien Brault; Benjamin Damilano; Aimeric Courville; Mathieu Leroux; Abdelkarim Kahouli; Maxim Korytov; Philippe Vennéguès; Gaetano Randazzo; Sébastien Chenot; Borge Vinter; Philippe De Mierry; Jean Massies; Daniel Rosales; Thierry Bretagnon; Bernard Gil
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The formation of hexagonal-shaped InGaN-nanodisk on GaN-nanowire observed in plasma source molecular beam epitaxy
Author(s): Tien Khee Ng; Anwar Gasim; Dongkyu Cha; Bilal Janjua; Yang Yang; Shafat Jahangir; Chao Zhao; Pallab Bhattacharya; Boon Siew Ooi
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p-Type InN nanowires: towards ultrahigh speed nanoelectronics and nanophotonics
Author(s): Songrui Zhao; Zetian Mi; Binh Huy Le
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Proposal for realizing high-efficiency III-nitride semiconductor tandem solar cells with InN/GaN superstructure magic alloys fabricated at raised temperature (SMART)
Author(s): Kazuhide Kusakabe; Akihiko Yoshikawa
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III-nitride tunnel junctions for efficient solid state lighting
Author(s): Sriram Krishnamoorthy; Fatih Akyol; Siddharth Rajan
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Defects in GaN based transistors
Author(s): A. Sasikumar; A. R. Arehart; S. W. Kaun; J. Chen; E. X. Zhang; D. M. Fleetwood; R. D. Schrimpf; J. S. Speck; S. A. Ringel
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Effect of electron density on cutoff frequency of III-N HFETs
Author(s): Arvydas Matulionis; Hadis Morkoç
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Electrical characteristics of AlGaN-GaN high electron mobility transistors and AlGaN Schottky diodes irradiated with protons
Author(s): Yongkun Sin; Nathan Presser; Brendan Foran; Stephen LaLumondiere; William Lotshaw; Steven C. Moss
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Monolithic white light emitting diodes using a (Ga,In)N-based light converter
Author(s): Benjamin Damilano; Kaddour Lekhal; Hyonju Kim-Chauveau; Sakhawat Hussain; Eric Frayssinet; Julien Brault; Sébastien Chenot; Philippe Vennéguès; Philippe De Mierry; Jean Massies
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Optical properties of InGaN/GaN MQW LEDs grown on Si (111) substrates with low threading dislocation densities
Author(s): Shigeya Kimura; Jumpei Tajima; Hajime Nago; Toshiki Hikosaka; Hisashi Yoshida; Kenjiro Uesugi; Shinya Nunoue
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Influence of nanoscale indium fluctuation in the InGaN quantum-well LED to the efficiency droop with a fully 3D simulation model
Author(s): Tsung-Jui Yang; James S. Speck; Yuh-Renn Wu
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Design and lasing characteristics of GaN vertical elongated cavity surface emitting lasers
Author(s): Masao Kawaguchi; Osamu Imafuji; Kentaro Nagamatsu; Kazuhiko Yamanaka; Shinichi Takigawa; Takuma Katayama
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Recent advances in c-plane GaN visible lasers
Author(s): Uwe Strauβ; Thomas Hager; Georg Brüderl; Teresa Wurm; André Somers; Christoph Eichler; Clemens Vierheilig; Andreas Löffler; Jelena Ristic; Adrian Avramescu
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Advances in AlGaInN laser diode technology
Author(s): S. P. Najda; P. Perlin; T. Suski; L. Marona; Mike Bockowski; M. Leszczyński; P. Wisniewski; R. Czernecki; R. Kucharski; G. Targowski; S. Watson; A. E. Kelly
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Microscopic-scale investigation of the degradation of InGaN-based laser diodes submitted to electrical stress
Author(s): M. Meneghini; S. Carraro; G. Meneghesso; N. Trivellin; G. Mura; F. Rossi; G. Salviati; K. Holc; T. Weig; L. Schade; M. A. Karunakaran; J. Wagner; U. T. Schwarz; E. Zanoni
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Auger recombination and leakage in InGaN/GaN quantum well LEDs
Author(s): Friedhard Römer; Marcus Deppner; Christian Range; Bernd Witzigmann
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Low temperature studies of the efficiency droop in InGaN-based light-emitting diodes
Author(s): Jong-In Shim; Hyunsung Kim; Dong-Pyo Han; Dong-Soo Shin; Kyu Sang Kim
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High-power pseudomorphic mid-ultraviolet light-emitting diodes with improved efficiency and lifetime
Author(s): Craig G. Moe; James R. Grandusky; Jianfeng Chen; Ken Kitamura; Mark C. Mendrick; Muhammad Jamil; Masato Toita; Shawn R. Gibb; Leo J. Schowalter
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Boost in deep-UV electroluminescence from tunnel-injection GaN/AlN quantum dot LEDs by polarization-induced doping
Author(s): Jai K. Verma; Vladimir V. Protasenko; S. M. Islam; Huili Xing; Debdeep Jena
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Highly efficient InGaN MQW LEDs grown on 200 mm Si substrates
Author(s): Masaaki Onomura
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Multi-wavelength light emission from three-dimensional AlGaN quantum wells fabricated on facet structures
Author(s): Ken Kataoka; Masanori Yamaguchi; Kensuke Fukushima; Mitsuru Funato; Yoichi Kawakami
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Optical properties of m-plane GaN grown on patterned Si(112) substrates by MOCVD using a two-step approach
Author(s): N. Izyumskaya; S. Okur; F. Zhang; M. Monavarian; V. Avrutin; Ü. Özgür; S. Metzner; C. Karbaum; F. Bertram; J. Christen; H. Morkoç
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Characterization of 380nm UV-LEDs grown on free-standing GaN by atmospheric-pressure metal-organic chemical vapor deposition
Author(s): C. Y. Shieh; Z. Y. Li; H. C. Kuo; J. Y. Chang; G. C. Chi
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Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED
Author(s): Ilya E. Titkov; Amit Yadav; Vera L Zerova; Modestas Zulonas; Andrey F. Tsatsulnikov; Wsevolod V. Lundin; Alexey V. Sakharov; Edik U. Rafailov
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Impact of extended defects on optical properties of (1-101)GaN grown on patterned Si
Author(s): S. Okur; N. Izyumskaya; F. Zhang; V. Avrutin; S. Metzner; C. Karbaum; F. Bertram; J. Christen; H. Morkoç; Ü. Özgür
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Determination of carrier diffusion length in p- and n-type GaN
Author(s): Shopan Hafiz; Sebastian Metzner; Fan Zhang; Morteza Monavarian; Vitaliy Avrutin; Hadis Morkoç; Christopher Karbaum; Frank Bertram; Jürgen Christen; Bernard Gil; Ümit Özgür
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