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Proceedings of SPIE Volume 8880

Photomask Technology 2013
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Volume Details

Volume Number: 8880
Date Published: 10 October 2013
Softcover: 82 papers (800) pages
ISBN: 9780819495457

Table of Contents
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Front Matter: Volume 8880
Author(s): Proceedings of SPIE
Delivering complexity at the frontier of electronics
Author(s): Michael C. Mayberry
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Line width roughness and its control on photomask
Author(s): Banqiu Wu; Ajay Kumar
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Ultra-low roughness magneto-rheological finishing for EUV mask substrates
Author(s): Paul Dumas; Richard Jenkins; Chuck McFee; Arun J. Kadaksham; Dave K. Balachandran; Ranganath Teki
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Entering mask process correction era for EUV mask manufacturing
Author(s): Christian Bürgel; Keith Standiford; Gek Soon Chua
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Automated Defect Classification (ADC) and Progression Monitoring (DPM) in wafer fab reticle requalification
Author(s): T. H. Yen; Rick Lai; Laurent C. Tuo; Vikram Tolani; Dongxue Chen; Peter Hu; Jiao Yu; George Hwa; Yan Zheng; Suresh Lakkapragada; Kechang Wang; Danping Peng; Bill Wang; Kaiming Chiang
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Performance of an automatic algorithm for quantifying critical dimensions in actinic aerial images
Author(s): Doug Uzzel; Mark Ma; Shad E. Hedges; Saghir Munir
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Improve mask inspection capacity with Automatic Defect Classification (ADC)
Author(s): Crystal Wang; Steven Ho; Eric Guo; Kechang Wang; Suresh Lakkapragada; Jiao Yu; Peter Hu; Vikram Tolani; Linyong Pang
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Increasing reticle inspection efficiency and reducing wafer print-checks using automated defect classification and simulation
Author(s): Sung Jae Ryu; Sung Taek Lim; Anthony Vacca; Peter Fiekowsky; Dan Fiekowsky
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Your worst nightmare: inspection of aggressive OPC on 14nm masks with emphasis on defect sensitivity and wafer defect print predictability
Author(s): Karen D. Badger; Michael Hibbs; Jed Rankin; Kazunori Seki; Ian Stobert; Daniel J. Dechene; Ben Bleiman; Mini Ghosal; William Broadbent; Vincent Redding
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The impact of 14nm photomask variability and uncertainty on computational lithography solutions
Author(s): John Sturtevant; Edita Tejnil; Peter D. Buck; Steffen Schulze; Franklin Kalk; Kent Nakagawa; Guoxiang Ning; Paul Ackmann; Fritz Gans; Christian Buergel
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An accurate ILT-enabling full-chip mask 3D model for all-angle patterns
Author(s): Hongbo Zhang; Qiliang Yan; Ebo Croffie; Lin Zhang; Yongfa Fan
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Simulation study of CD variation caused by field edge effects and out-of-band radiation in EUVL
Author(s): Weimin Gao; Ardavan Niroomand; Gian F. Lorusso; Robert Boone; Kevin Lucas; Wolfgang Demmerle
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Color balancing for triple patterning lithography with complex designs
Author(s): Haitong Tian; Hongbo Zhang; Martin D. F. Wong
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450mm wafer patterning with jet and flash imprint lithography
Author(s): Ecron Thompson; Paul Hellebrekers; Paul Hofemann; Dwayne L. LaBrake; Douglas J. Resnick; S. V. Sreenivasan
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Computational mask defect review for contamination and haze inspections
Author(s): Paul Morgan; Daniel Rost; Daniel Price; Noel Corcoran; Masaki Satake; Peter Hu; Danping Peng; Dean Yonenaga; Vikram Tolani; Yulian Wolf; Pinkesh Shah
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Evaluation of dry technology for removal of pellicle adhesive residue on advanced optical reticles
Author(s): Shazad Paracha; Samy Bekka; Benjamin Eynon; Jaehyuck Choi; Mehdi Balooch; Ivin Varghese; Tyler Hopkins
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Inline detection of Chrome degradation on binary 193nm photomasks
Author(s): Félix Dufaye; Astrid Sippel; Mark Wylie; Edgardo García-Berríos; Charles Crawford; Carl Hess; Luca Sartelli; Carlo Pogliani; Hiroyuki Miyashita; Stuart Gough; Frank Sundermann; Christophe Brochard
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Comparison of CD measurements of an EUV photomask by EUV scatterometry and CD-AFM
Author(s): Frank Scholze; Victor Soltwisch; Gaoliang Dai; Mark-Alexander Henn; Hermann Gross
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Two-dimensional mask effects at the 14 nm logic node
Author(s): A. E. Zweber; A. McGuire; M. Hibbs; S. Nash; K. Ballman; T. Faure; J. Rankin; T. Isogawa; T. Senna; Y. Negishi; M. Miller; S. Barai; D. J. Dechene
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Measurement of EUV absorber and resist CD using spectroscopic ellipsometer
Author(s): Kyung M. Lee; Malahat Tavassoli; Pei-yang Yan; Guojing Zhang
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Reflecting on inspectability and wafer printability of multiple EUV mask absorbers
Author(s): Kazunori Seki; Karen Badger; Emily Gallagher; Gregory McIntyre; Toshio Konishi; Yutaka Kodera; Satoshi Takahashi; Vincent Redding
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The SEMATECH high-NA actinic reticle review project (SHARP) EUV mask-imaging microscope
Author(s): Kenneth A. Goldberg; Iacopo Mochi; Markus P. Benk; Chihcheng Lin; Arnaud P. Allezy; Michael Dickinson; Carl W. Cork; James B. Macdougall; Erik H. Anderson; Weilun Chao; Farhad Salmassi; Eric M. Gullikson; Daniel Zehm; Vamsi Vytla; William Cork; Jason DePonte; Gino Picchi; Ahmet Pekedis; Takeshi Katayanagi; Michael S Jones; Elizabeth Martin; Patrick P Naulleau; Senajith B Rekawa
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EUV patterned mask inspection system using a projection electron microscope technique
Author(s): Hidehiro Watanabe; Ryoichi Hirano; Susumu Iida; Tsuyoshi Amano; Tsuneo Terasawa; Masahiro Hatakeyama; Takeshi Murakami; Shoji Yoshikawa; Kenji Terao
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Defects on high-resolution negative-tone resist: "The revenge of the blobs"
Author(s): M. I. Sanchez; L. K. Sundberg; L. D. Bozano; R. Sooriyakumaran; D. P. Sanders; T. Senna; M. Tanabe; T. Komizo; I. Yoshida; A. E. Zweber
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Controlling the sidewall angle of advanced attenuated phase-shift photomasks for 14nm and 10nm lithography
Author(s): Richard Wistrom; Yoshifumi Sakamoto; Jeffery Panton; Thomas Faure; Takeshi Isogawa; Anne McGuire
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Model-based etch profile simulation of PSM films
Author(s): Michael Grimbergen; Madhavi Chandrachood; Jeffrey Tran; Becky Leung; Keven Yu; Amitabh Sabharwal; Ajay Kumar
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Implementable and systematic mitigation of native defects in EUV masks
Author(s): Wen-Chang Hsueh; Li-Chih Yeh; Ming-Jiun Yao; Yun-Yue Lin; Jia-Jen Chen; Shin-Chang Lee; Anthony Yen
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Studying the effects of modified surface chemistry on chrome migration in binary photomasks
Author(s): Christopher Kossow; Peter Kirlin; Michael Green
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Investigation of EUVL reticle capping layer peeling under wet cleaning
Author(s): Sherjang Singh; Davide Dattilo; Uwe Dietze; Arun John Kadaksham; Il-Yong Jang; Frank Goodwin
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1D design style implications for mask making and CEBL
Author(s): Michael C. Smayling
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Charting CEBL's role in mainstream semiconductor lithography
Author(s): David K. Lam
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Impact of proximity model inaccuracy on patterning in electron beam lithography
Author(s): Cheng-Hung Chen; Tsung-Chih Chien; P. Y. Liu; W. C. Wang; J. J. Shin; S. J. Lin; Burn J. Lin
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2013 Photomask Japan panel discussion summary: Future mask patterning technologies in the next decade: searching for the best mix solution
Author(s): Noriaki Nakayamada; Ichiro Kagami
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Mask automation: need a revolution in mask makers and equipment industry
Author(s): Seong-yong Moon; Sang-yong Yu; Young-hwa Noh; Ki-jung Son; Hyun-Joo Lee; Han-Ku Cho
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DSA template mask determination and cut redistribution for advanced 1D gridded design
Author(s): Zigang Xiao; Yuelin Du; Martin D.F. Wong; Hongbo Zhang
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Finishing of EUV photomask substrates by CNC precessed bonnet polisher
Author(s): Anthony T. H. Beaucamp; Yoshiharu Namba; Phillip Charlton; Richard R. Freeman
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A novel design-based global CDU metrology for 1X nm node logic devices
Author(s): Young-Keun Yoon; Dong Hoon Chung; Min-Ho Kim; Jung-Uk Seo; Byung-Gook Kim; Chan-Uk Jeon; JiUk Hur; Wonil Cho; Tetsuya Yamamoto
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EUV scatterometry-based measurement method for the determination of phase roughness
Author(s): Rikon Chao; Eric Gullikson; Michael Goldstein; Frank Goodwin; Ranganath Teki; Andy Neureuther; Patrick Naulleau
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SEM image quality enhancement technology for bright field mask
Author(s): Naoki Fukuda; Yuta Chihara; Soichi Shida; Keisuke Ito
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Direct phase-shift measurement of an EUV mask with gradient absorber thickness
Author(s): Hiroyoshi Tanabe; Tetsunori Murachi; Seh-Jin Park; Eric M. Gullikson; Tsukasa Abe; Naoya Hayashi
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Performance of the proof-of-concept multi-beam mask writer (MBMW POC)
Author(s): Christof Klein; Hans Loeschner; Elmar Platzgummer
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Shot count reduction for non-Manhattan geometries: concurrent optimization of data fracture and mask writer design
Author(s): Russell Cinque; Tadashi Komagata; Taiichi Kiuchi; Clyde Browning; Patrick Schiavone; Paolo Petroni; Luc Martin; Thomas Quaglio
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Turret-type electron gun for EBM-8000
Author(s): Nobuo Miyamoto; Rodney Kendall; Kenichi Saito
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EUV multilayer defect compensation (MDC): latest progress on model and compensation methods
Author(s): Linyong Pang; Masaki Satake; Ying Li; Peter Hu; Danping Peng; Dongxue Chen; Vikram Tolani
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Using segmented models for initial mask perturbation and OPC speedup
Author(s): Ayman Hamouda; Mohab Anis; Karim S. Karim
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High-fidelity dummy fill printing with repair OPC
Author(s): Louis Lin; Wei-Long Wang; Sarah McGowan
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Phase preservation study on ArF mask for haze-free mask resist strip and cleaning
Author(s): Irene Shi; Eric Guo; Eric Tian; Tracy Gu; Forrest Jiang; Sandy Qian; Daisuke Matsushima; Jinyuan Pang
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A new mask linearity specification for EUV masks based on time dependent dielectric breakdown requirements
Author(s): Keith Standiford; Christian Bürgel
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A study on the ESD damage of a silicon oxy-nitride hard mask on the chromium surface of PSM blank
Author(s): Songbae Moon; Heebom Kim; Inkyun Shin; Chanuk Jeon
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In-die mask registration measurement on 28nm-node and beyond
Author(s): Shen Hung Chen; Yung Feng Cheng; Ming Jui Chen
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Alternative material to mitigate chrome degradation on high volume ArF layers
Author(s): Guoxiang Ning; Selvi Gopalakrishnan; Thomas Thamm; Nikolay Oleynik; Paul Ackmann; Remi Riviere; Stephanie Maelzer; Yee Mei Foong
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OPC modeling using AFM CD measurement
Author(s): Kyoil Koo; Gyengseop Kim; Sanghun Kim; Seunghune Yang; Sooryong Lee; Youngchang Kim; Jungdal Choi; Hokyu Kang
Increased depth of field through wave-front coding: using an off-axis zone plate lens with cubic phase modulation in an EUV microscope
Author(s): Markus P. Benk; Kenneth A. Goldberg; Iacopo Mochi; Weilun Chao; Erik H. Anderson
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A study of the defect detection technology using the optic simulation for the semiconductor device
Author(s): Yusin Yang; Yongdeok Jeong; Mitsunori Numata; Mira Park; Mingoo Seo; SangKil Lee; ChungSam Jun; Kyupil Lee; Insoo Cho
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Mask contamination study in electron and ion beam repair system
Author(s): Hyo-Jin Ahn; Jong-Min Kim; Dong-Seok Lee; Gyu-Yong Lee; Dong-Heok Lee; Sang-Soo Choi
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Model-driven target optimization to resolve design hotspots through image quality enhancement
Author(s): Sung-Woo Lee; Tom Cecil; Guangming Xiao; Mindy Lee; Jung-Hoe Choi; Seung-Hee Baek; Jin-Hyuck Jeon; Chan Ha Park; Dave Kim; Kevin Lucas
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Sensitivity analysis for OMOG and EUV photomasks characterized by UV-NIR spectroscopic ellipsometry
Author(s): A. Heinrich; I. Dirnstorfer; J. Bischoff; K. Meiner; U. Richter; T. Mikolajick
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Fleet matching performance for multiple registration measurement tools
Author(s): D. Beyer; C. Bläsing; K. Boehm; S. Heisig; D. Seidel
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The recovering method of etch chamber condition by using the optical emission spectroscopy monitoring system
Author(s): Choong Han Ryu; Jae Young Jun; Ho Yong Jung; Sang Pyo Kim; Dong Gyu Yim
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Analysis of EUV mask durability under various absorber etch conditions
Author(s): Dong Wook Lee; Sang Jin Jo; Sung Hyun Oh; Tae Joong Ha; Sang Pyo Kim; Dong Gyu Yim
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Finite-element based electromagnetic field simulations: benchmark results for isolated structures
Author(s): Sven Burger; Lin Zschiedrich; Jan Pomplun; Frank Schmidt
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Metrology variability and its impact in process modeling
Author(s): Thiago Figueiro; Mohamed Saib; Kang-Hoon Choi; Christoph Hohle; Martin J. Thornton; Cyril Vannufel; Jean-Hervé Tortai; Patrick Schiavone
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Pupil shaping and coherence control in an EUV mask-imaging microscope
Author(s): Iacopo Mochi; Kenneth A. Goldberg; Markus P. Benk; Patrick P. Naulleau
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Efficient full-chip mask 3D model for off-axis illumination
Author(s): Hongbo Zhang; Qiliang Yan; Lin Zhang; Ebo Croffie; Peter Brooker; Qian Ren; Yongfa Fan
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In-die mask registration for multi-patterning
Author(s): F. Laske; S. Kunitani; T. Kamibayashi; M. Yamana; A. Fuse; M. Wagner; K.-D. Roeth; M. Ferber; M. Daneshpanah; S. Czerkas; H. Sakaguchi
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Full chip implant correction with wafer topography OPC modeling in 2x nm bulk technologies
Author(s): J-C. Michel; J-C. Le Denmat; E. Sungauer; F. Robert; E. Yesilada; A-M. Armeanu; J. Entradas; J. L. Sturtevant; T. Do; Y. Granik
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Improving wafer level CD uniformity for logic applications utilizing mask level metrology and process
Author(s): Avi Cohen; Thomas Trautzsch; Ute Buttgereit; Erez Graitzer; Ori Hanuka
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A fast convolution method using basis expansion for highly efficient intensity calculation in mask optimization
Author(s): Yaping Sun; Yehua Zuo; Jinyu Zhang; Yan Wang; Zhiping Yu
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Impact of an etched EUV mask black border on imaging: part II
Author(s): Natalia Davydova; Robert de Kruif; Hiroaki Morimoto; Yo Sakata; Jun Kotani; Norihito Fukugami; Shinpei Kondo; Tomohiro Imoto; Brid Connolly; Dries van Gestel; Dorothe Oorschot; David Rio; John Zimmerman; Noreen Harned
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Development of inspection system for EUV mask with novel projection electron microscopy (PEM)
Author(s): Masahiro Hatakeyama; Takeshi Murakami; Kenji Terao; Kenji Watanabe; Shoji Yoshikawa; Tsuyoshi Amano; Ryoichi Hirano; Susumu Iida; Tsuneo Terasawa; Hidehiro Watanabe
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A novel method for utilizing AIMS to evaluate mask repair and quantify over-repair or under-repair condition
Author(s): Doug Uzzel; Anthony Garetto; Krister Magnusson; Gilles Tabbone
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Analysis of edge effects in attenuating phase-shift masks using quantitative phase imaging
Author(s): Aamod Shanker; Martin Sczyrba; Brid Connolly; Andy Neureuther; Laura Waller
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Recovering effective amplitude and phase roughness of EUV masks
Author(s): Rene A. Claus; Iacopo Mochi; Markus P. Benk; Kenneth A. Goldberg; Andrew R. Neureuther; Patrick P. Naulleau
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AF printability check with a full-chip 3D resist profile model
Author(s): Cheng-En Rich Wu; Jason Chang; Hua Song; James Shiely
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HSQ process development for a superior resolution and a reasonable sensitivity for an EB master-mold for nanoimprint lithography
Author(s): Hideo Kobayashi; Hiromasa Iyama; Takeshi Kagatsume; Takashi Sato; Shuji Kishimoto; Tsuyoshi Watanabe
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Under-layer effects for block levels: are they under control?
Author(s): Dongbing Shao; Bidan Zhang; Shayak Banerjee; Hong Kry; Anuja De Silva; Ranee Kwong; Kisup Chung; Yea-Sen Lin; Alan Leslie
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Novel fracturing algorithm to reduce shot count for curvy shape
Author(s): Takuya Tao; Nobuyasu Takahashi; Masakazu Hamaji
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Extreme ultraviolet mask defect observation using an extreme ultraviolet microscope
Author(s): Tsuyoshi Amano; Tsuneo Terasawa; Hidehiro Watanabe; Mitsunori Toyoda; Tetsuo Harada; Takeo Watanabe; Hiroo Kinoshita
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E-beam GIDC resolution enhancement technology in practical applications
Author(s): S. Martens; J. Butschke; R. Galler; M. Krüger; H. Sailer; M. Sülzle
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Advancement of fast EUV lithography modeling/simulations and applications on evaluating different repair options for EUV mask multilayer defect
Author(s): Ying Li; Masaki Satake; Danping Peng; Peter Hu; Linyong Pang
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Simulation and correction of resist charging due to fogging in electron-beam lithography
Author(s): Sergey Babin; Sergey Borisov; Vladimir Militsin; Elena Patyukova
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2013 mask industry survey
Author(s): Matt Malloy
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Potential of mask production process for finer pattern fabrication
Author(s): Keisuke Yagawa; Kunihiro Ugajin; Machiko Suenaga; Yoshihito Kobayashi; Takeharu Motokawa; Kazuki Hagihara; Masato Saito; Masamitsu Itoh
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Patterning of EUVL binary etched multilayer mask
Author(s): Kosuke Takai; Takeharu Motokawa; Koji Murano; Takashi Kamo; Naoya Hayashi
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