Share Email Print
cover

PROCEEDINGS VOLUME 8682

Advances in Resist Materials and Processing Technology XXX
Editor(s): Mark H. Somervell
Format Member Price Non-Member Price
Softcover $105.00 * $105.00 *

*Available as a black-and-white photocopy reprint only. Allow two weeks reprinting time plus standard delivery time. No discounts or returns apply.


Volume Details

Volume Number: 8682
Date Published: 18 April 2013
Softcover: 68 papers (610) pages
ISBN: 9780819494641

Table of Contents
show all abstracts | hide all abstracts
Front Matter: Volume 8682
Author(s): Proceedings of SPIE
The evolving complexity of patterning materials
Author(s): Tsutomu Shimokawa; Yoshi Hishiro; Yoshikazu Yamaguchi; Motoyuki Shima; Tooru Kimura; Yoshio Takimoto; Tomoki Nagai
Show Abstract
Optimization of a virtual EUV photoresist for the trade-off between throughput and CDU
Author(s): Mark D. Smith; John Biafore; Chao Fang
Show Abstract
Sustainable scaling technique on double-patterning process
Author(s): Hidetami Yaegashi; Kenichi Oyama; Arisa Hara; Sakurako Natori; Shohei Yamauchi; Masatoshi Yamato
Show Abstract
Dry development rinse process (DDRP) and material (DDRM) for novel pattern collapse free process
Author(s): Rikimaru Sakamoto; Yasushi Sakaida; Bang-Ching Ho
Show Abstract
Post-litho line edge/width roughness smoothing by ion implantations
Author(s): Tristan Y. Ma; Peng Xie; Ludovic Godet; Patrick M. Martin; Chris Campbell; Jun Xue; Liyan Miao; Yongmei Chen; Huixiong Dai; Christopher Bencher; Chris S. Ngai
Show Abstract
Precuring implant photoresists for shrink and patterning control
Author(s): Gustaf Winroth; Erik Rosseel; Christie Delvaux; Efrain Altamirano Sanchez; Monique Ercken
Show Abstract
Application specific ratings for lithography process filters
Author(s): Toru Umeda; Shuichi Tsuzuki
Show Abstract
The novel solution for negative impact of out-of-band and outgassing by top coat materials in EUVL
Author(s): Noriaki Fujitani; Rikimaru Sakamoto; Takafumi Endo; Ryuji Onishi; Tokio Nishita; Hiroaki Yaguchi; Bang-Ching Ho
Show Abstract
Rectification of EUV-patterned contact holes using directed self-assembly
Author(s): Roel Gronheid; Arjun Singh; Todd R. Younkin; Paulina Rincon Delgadillo; Paul Nealey; Boon Teik Chan; Kathleen Nafus; Ainhoa Romo Negreira; Mark Somervell
Show Abstract
Novel EUV resist materials and process for 20nm half pitch and beyond
Author(s): Ken Maruyama; Ramakrishnan Ayothi; Yoshi Hishiro; Koji Inukai; Motohiro Shiratani; Tooru Kimura
Show Abstract
Process variability of self-aligned multiple patterning
Author(s): Kenichi Oyama; Shohei Yamauchi; Arisa Hara; Sakurako Natori; Hidetami Yaegashi
Show Abstract
20nm VIA BEOL patterning challenges
Author(s): Chien-Hsien S. Lee; Sohan Singh Mehta; Wontae Hwang; Hui Husan Tsai; Michael Anderson; Yayi Wei; Matthew Herrick; Xiang Hu; Bumhwan Jeon; Shyam Pal
Show Abstract
Feasibility study of resist slimming for SIT
Author(s): Nicole Saulnier; Chiew-seng Koay; Matthew Colburn; David Hetzer; Michael Cicoria; Jonathan Ludwicki
Show Abstract
Combining physical resist modeling and self-consistent field theory for pattern simulation in directed self-assembly
Author(s): Michael Reilly; Valeriy Ginzburg; Mark D. Smith
Show Abstract
Bottom-up/top-down high resolution, high throughput lithography using vertically assembled block bottle brush polymers
Author(s): Peter Trefonas; James W. Thackeray; Guorong Sun; Sangho Cho; Corrie Clark; Stanislav V. Verkhoturov; Michael J. Eller; Ang Li; Adriana Pavía-Jiménez; Emile A. Schweikert; Karen L. Wooley
Show Abstract
In situ dissolution analysis of half-pitch line and space patterns at various resist platforms using high speed atomic force microscopy
Author(s): Julius Joseph Santillan; Toshiro Itani
Show Abstract
Advances in directed self assembly integration and manufacturability at 300 mm
Author(s): Benjamen Rathsack; Mark Somervell; Makato Muramatsu; Keiji Tanouchi; Takahiro Kitano; Eiichi Nishimura; Koichi Yatsuda; Seiji Nagahara; Hiroyuki Iwaki; Keiji Akai; Mariko Ozawa; Ainhoa Romo Negreira; Shigeru Tahara; Kathleen Nafus
Show Abstract
Progress in directed self-assembly hole shrink applications
Author(s): Todd R. Younkin; Roel Gronheid; Paulina Rincon Delgadillo; Boon Teik Chan; Nadia Vandenbroeck; Steven Demuynck; Ainhoa Romo-Negreira; Doni Parnell; Kathleen Nafus; Shigeru Tahara; Mark Somervell
Show Abstract
Process development of the EUVL negative-tone imaging at EIDEC
Author(s): Toshiya Takahashi; Ryuji Onishi; Toshiro Itani
Show Abstract
Sub-20nm lithography negative tone chemically amplified resists using cross-linker additives
Author(s): Prashant K. Kulshreshtha; Ken Maruyama; Sara Kiani; Scott Dhuey; Pradeep Perera; James Blackwell; Deirdre Olynick; Paul D. Ashby
Show Abstract
Investigation of trench and contact hole shrink mechanism in the negative tone develop process
Author(s): Sohan Singh Mehta; Craig Higgins; Vikrant Chauhan; Shyam Pal; Hui Peng Koh; Jean Raymond Fakhoury; Shaowen Gao; Lokesh Subramany; Salman Iqbal; Bumhwan Jeon; Pedro Morrison; Chris Karanikas; Yayi Wei; David R. Cho
Show Abstract
Negative tone imaging (NTI) with KrF: extension of 248nm IIP lithography to under sub-20nm logic device
Author(s): Tae-Hwan Oh; Tae-Sun Kim; Yura Kim; Jahee Kim; Sujeong Heo; Bumjoon Youn; Jaekyung Seo; Kwang-Sub Yoon; Byoung-il Choi
Show Abstract
EUV lithography performance of negative-tone chemically amplified fullerene resist
Author(s): A. Frommhold; D. X. Yang; A. McClelland; X. Xue; R. E. Palmer; A. P. G. Robinson
Show Abstract
Non-aqueous negative-tone development of inorganic metal oxide nanoparticle photoresists for next generation lithography
Author(s): Christine Y. Ouyang; Yeon Sook Chung; Li Li; Mark Neisser; Kyoungyong Cho; Emmanuel P. Giannelis; Christopher K. Ober
Show Abstract
New spin-on metal hardmask materials for lithography processes
Author(s): Huirong Yao; Salem Mullen; Elizabeth Wolfer; Dalil Rahman; Clement Anyadiegwu; Douglas Mckenzie; Alberto Dioses; Joonyeon Cho; Munirathna Padmanaban
Show Abstract
Development of KrF hybrid resist for a dual-isolation application
Author(s): Sen Liu; Steven Holmes; Kuang Jung Chen; Wu-song Huang; Ranee Kwong; Greg Breyta; Bruce Doris; Kangguo Cheng; Scott Luning; Maud Vinet; Laurent Grenouillet; Qing Liu; Matt Colburn; Chung-Hsi Wu
Show Abstract
Novel photoresist thin films with in-situ photoacid generator by molecular layer deposition
Author(s): Han Zhou; Stacey F. Bent
Show Abstract
Novel patternable and conducting metal-polymer nanocomposites: a step towards advanced mutlifunctional materials
Author(s): Pedro J. Rodríguez-Cantó; Mariluz Martínez-Marco; Rafael Abargues; Victor Latorre-Garrido; Juan P. Martínez-Pastor
Show Abstract
Metal-polymer nanocomposite resist: a step towards in-situ nanopatterns metallization
Author(s): R. Abargues; M. L. Martinez-Marco; P. J. Rodriguez-Canto; J. Marques-Hueso; J. P. Martinez-Pastor
Show Abstract
Advanced electron beam resist requirements and challenges
Author(s): Andrew Jamieson; Bennett Olson; Maiying Lu; Nathan Wilcox
Show Abstract
Effects on electron scattering and resist characteristics using assisting underlayers for e-beam direct write lithography
Author(s): Xaver Thrun; Kang-Hoon Choi; Norbert Hanisch; Christoph Hohle; Katja Steidel; Douglas Guerrero; Thiago Figueiro; Johann W. Bartha
Show Abstract
Sub-14 nm HSQ line patterning by e-beam dose proximity effect correction assisted with designed line CD/pitch split
Author(s): Wei-Su Chen; Chu-Ya Yang; Chiung Yu Lo; Hung-Wen Wei; Frederick T. Chen; Tzu-Kun Ku
Show Abstract
The evaluation of photo/e-beam complementary grayscale lithography for high topography 3D structure
Author(s): Liya Yu; Richard J. Kasica; Robert N. Newby; Lei Chen; Vincent K. Luciani
Show Abstract
Progress in resolution, sensitivity, and critical dimensional uniformity of EUV chemically amplified resists
Author(s): James Thackeray; James Cameron; Vipul Jain; Paul LaBeaume; Suzanne Coley; Owendi Ongayi; Mike Wagner; Aaron Rachford; John Biafore
Show Abstract
Negative tone imaging process and materials for EUV lighography
Author(s): Shinji Tarutani; Wataru Nihashi; Shuuji Hirano; Natsumi Yokokawa; Hiroo Takizawa
Show Abstract
Underlayer and rinse materials for improving EUV resist performance
Author(s): Munirathna Padmanaban; JoonYeon Cho; Takanori Kudo; Salem Mullen; Huirong Yao; Go Noya; Yuriko Matsuura; Yasuaki Ide; Jin Li; Georg Pawlowski
Show Abstract
High absorbing resists based on trifluoromethacrylate-vinyl ether copolymers for EUV lithography
Author(s): Matthew D. Christianson; Matthew M. Meyer; Owendi Ongayi; David Valeri; Michael Wagner
Show Abstract
LWR study on resist formulation parameters
Author(s): Kyoungyoung Cho; Shinji Tarutani; Naoki Inoue; Hideaki Tsubaki; Mark Neisser
Show Abstract
Monitoring the evolution of line edge roughness during resist development using an analog of quenched flow kinetics
Author(s): M. I. Sanchez; L. K. Sundberg; G. M. Wallraff; W. D. Hinsberg; L. D. Bozano; H. D. Truong; K. Petrillo
Show Abstract
Evaluation of sensitivity for positive tone non-chemically and chemically amplified resists using ionized radiation: EUV, x-ray, electron and ion induced reactions
Author(s): Akihiro Oshima; Tomoko Gowa Oyama; Masakazu Washio; Seiichi Tagawa
Show Abstract
Study on dissolution behavior of polymer-bound and polymer-blended photo-acid generator (PAG) resists
Author(s): Hiroki Yamamoto; Takahiro Kozawa; Seiichi Tagawa
Show Abstract
Pattern wiggling investigation of self-aligned double patterning for 2x nm node NAND Flash and beyond
Author(s): You-Yu Lin; Chun-Chi Chen; Chia-Yu Li; Zih-Song Wang; Ching-Hua Chen
Show Abstract
Extendibility of self-aligned type multiple patterning for further scaling
Author(s): Shohei Yamauchi; Arisa Hara; Kenichi Oyama; Sakurako Natori; Masatoshi Yamato; Hidetami Yaegashi
Show Abstract
Process requirement of self-aligned multiple patterning
Author(s): Sakurako Natori; Shohei Yamauchi; Arisa Hara; Masatoshi Yamato; Kenichi Oyama; Hidetami Yaegashi
Show Abstract
Capability study and challenges to sub-2x nm node contact hole patterning
Author(s): Wan-Lin Kuo; Ya-Ting Chan; Meng-Feng Tsai; Yi-Shiang Chang; Chia-Chi Lin; Ming-Chien Chiu; Chun-Hsun Chen; Hung-Ming Wu; Mao-Hsing Chiu
Show Abstract
Photoresist film analysis to investigate LWR generation mechanism
Author(s): Shinichi Nakamura; Kenji Mochida; Tooru Kimura; Kana Nakanishi; Naohiko Kawasaki; Naoki Man
Show Abstract
Theoretical study of deprotonation of polymer radical cation for EUV resist
Author(s): M. Endo; S. Tagawa
Show Abstract
Analysis of acid-generating action of PAG in an EUV resist using acid-sensitive dyes
Author(s): Atsushi Sekiguchi; Yoko Matsumoto; John J. Biafore
Show Abstract
Calculating development parameters for chemically amplified resists by the film-reducing method
Author(s): Atsushi Sekiguchi; Yoshihisa Sensu
Show Abstract
Study of swelling behavior in ArF resist during development by the QCM method (3): observations of swelling layer elastic modulus
Author(s): Atsushi Sekiguchi
Show Abstract
Light scattering by organic crosslinking material using nanomorphology of polymer blends
Author(s): Satoshi Takei; Naoya Kubo; Takumi Ichikawa; Kazuki Maekawa; Yoshiyuki Yokoyama
Show Abstract
Line edge roughness of high deprotection activation energy photoresist by using sub-millisecond post exposure bake
Author(s): Jing Jiang; Byungki Jung; Michael O. Thompson; Christopher K. Ober
Show Abstract
PEB to development delay influence on contact patterning by negative tone development process
Author(s): C. K. Chen; C. H. Lin; C. H. Huang; Elvis Yang; T. H. Yang; Chih-Yuan Lu
Show Abstract
Novel ArF photoresist polymer to suppress the roughness formation in plasma etching processes
Author(s): Keisuke Kato; Atsushi Yasuda; Shin-ichi Maeda; Takuji Uesugi; Takeru Okada; Akira Wada; Seiji Samukawa
Show Abstract
EUV lithography using water-developable resist material derived from biomass
Author(s): Satoshi Takei; Akihiro Oshima; Tomoko G. Oyama; Takumi Ichikawa; Atsushi Sekiguchi; Miki Kashiwakura; Takahiro Kozawa; Seiichi Tagawa
Show Abstract
Polarization selective photoresist based on reactive liquid crystals doped with a dichroic photoinitiator
Author(s): My-Phung Van; Cees W. M. Bastiaansen; Dick J. Broer
Show Abstract
Development of new xanthendiol derivatives applied to the negative-tone molecular resists for EB/EUVL
Author(s): Masatoshi Echigo; Masako Yamakawa; Yumi Ochiai; Yu Okada; Takashi Makinoshima; Masaaki Takasuka
Show Abstract
High scan speed EBL containing contact hole resists with low defectivity
Author(s): Tsung Ju Yeh; Lian Cong Liu; Yeh-Sheng Lin; Wei-Sheng Chen; Che-Yi Lin; Chia Hung Lin; Chun Chi Yu; Deyan Wang; Mingqi Li; Chunfeng Guo; Rick Hardy; Tom Estelle; Chengbai Xu; George Barclay; Peter Trefonas; Kathleen O'Connell
Show Abstract
New negative resist design with novel photo-base generator
Author(s): Wen-Yun Wang; Cheng Han Wu; Yu-Chang Su; Chen-Hao Wu; Ya-Hui Chang; Ching-Yu Chang; Yao-Ching Ku
Show Abstract
Electron dose reduction through improved adhesion by cationic organic material with HSQ resist on an InGaAs multilayer system on GaAs substrate
Author(s): Wilfried Erfurth; Andrew Thompson; Nezih Ünal
Show Abstract
Postiive tone resists based on network deploymerization of molecular resists
Author(s): Richard A. Lawson; Jing Cheng; Ameneh Cheshmehkani; Laren M. Tolbert; Clifford L. Henderson
Show Abstract
Fabrication of optical film derived from biomass using eco-friendly nanoimprint lithography
Author(s): Satoshi Takei; Gaku Murakami; Yuto Mori; Takumi Ichikawa; Atsushi Sekiguchi; Tsutomu Obata; Yoshiyuki Yokoyama; Wataru Mizuno; Junji Sumioka; Yuji Horita
Show Abstract
High chi polymer development for DSA applications using RAFT technology
Author(s): Michael T. Sheehan; William B. Farnham; Hoang V. Tran; J. David Londono; Yefim Brun
Show Abstract
Release of MEMS devices with hard-baked polyimide sacrificial layer
Author(s): Javaneh Boroumand Azad; Imen Rezadad; Janardan Nath; Evan Smith; Robert E. Peale
Show Abstract
The effects of reduced resist consumption process conditions on total raw defects, line and space defects and single line open defects at the 20nm node
Author(s): Christos F. Karanikas; Jeong Soo Kim
Show Abstract
Point-of-use filter membrane selection, start-up, and conditioning for low-defect photolithography coatings
Author(s): Nick Brakensiek; Michael Cronin
Show Abstract
Strategy for yield improvement with sub-10nm photochemical filtration
Author(s): J. Braggin; C. Brodsky; M. Linnane; P. Klymko
Show Abstract
Effects of dispense equipment sequence on process start-up defects
Author(s): Nick Brakensiek; Michael Sevegney
Show Abstract

© SPIE. Terms of Use
Back to Top