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Proceedings of SPIE Volume 8682

Advances in Resist Materials and Processing Technology XXX
Editor(s): Mark H. Somervell
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Volume Details

Volume Number: 8682
Date Published: 18 April 2013
Softcover: 68 papers (610) pages
ISBN: 9780819494641

Table of Contents
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Front Matter: Volume 8682
Author(s): Proceedings of SPIE
The evolving complexity of patterning materials
Author(s): Tsutomu Shimokawa; Yoshi Hishiro; Yoshikazu Yamaguchi; Motoyuki Shima; Tooru Kimura; Yoshio Takimoto; Tomoki Nagai
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Optimization of a virtual EUV photoresist for the trade-off between throughput and CDU
Author(s): Mark D. Smith; John Biafore; Chao Fang
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Sustainable scaling technique on double-patterning process
Author(s): Hidetami Yaegashi; Kenichi Oyama; Arisa Hara; Sakurako Natori; Shohei Yamauchi; Masatoshi Yamato
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Dry development rinse process (DDRP) and material (DDRM) for novel pattern collapse free process
Author(s): Rikimaru Sakamoto; Yasushi Sakaida; Bang-Ching Ho
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Post-litho line edge/width roughness smoothing by ion implantations
Author(s): Tristan Y. Ma; Peng Xie; Ludovic Godet; Patrick M. Martin; Chris Campbell; Jun Xue; Liyan Miao; Yongmei Chen; Huixiong Dai; Christopher Bencher; Chris S. Ngai
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Precuring implant photoresists for shrink and patterning control
Author(s): Gustaf Winroth; Erik Rosseel; Christie Delvaux; Efrain Altamirano Sanchez; Monique Ercken
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Application specific ratings for lithography process filters
Author(s): Toru Umeda; Shuichi Tsuzuki
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The novel solution for negative impact of out-of-band and outgassing by top coat materials in EUVL
Author(s): Noriaki Fujitani; Rikimaru Sakamoto; Takafumi Endo; Ryuji Onishi; Tokio Nishita; Hiroaki Yaguchi; Bang-Ching Ho
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Rectification of EUV-patterned contact holes using directed self-assembly
Author(s): Roel Gronheid; Arjun Singh; Todd R. Younkin; Paulina Rincon Delgadillo; Paul Nealey; Boon Teik Chan; Kathleen Nafus; Ainhoa Romo Negreira; Mark Somervell
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Process variability of self-aligned multiple patterning
Author(s): Kenichi Oyama; Shohei Yamauchi; Arisa Hara; Sakurako Natori; Hidetami Yaegashi
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Capability study and challenges to sub-2x nm node contact hole patterning
Author(s): Wan-Lin Kuo; Ya-Ting Chan; Meng-Feng Tsai; Yi-Shiang Chang; Chia-Chi Lin; Ming-Chien Chiu; Chun-Hsun Chen; Hung-Ming Wu; Mao-Hsing Chiu
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20nm VIA BEOL patterning challenges
Author(s): Chien-Hsien S. Lee; Sohan Singh Mehta; Wontae Hwang; Hui Husan Tsai; Michael Anderson; Yayi Wei; Matthew Herrick; Xiang Hu; Bumhwan Jeon; Shyam Pal
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Feasibility study of resist slimming for SIT
Author(s): Nicole Saulnier; Chiew-seng Koay; Matthew Colburn; David Hetzer; Michael Cicoria; Jonathan Ludwicki
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Combining physical resist modeling and self-consistent field theory for pattern simulation in directed self-assembly
Author(s): Michael Reilly; Valeriy Ginzburg; Mark D. Smith
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In situ dissolution analysis of half-pitch line and space patterns at various resist platforms using high speed atomic force microscopy
Author(s): Julius Joseph Santillan; Toshiro Itani
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Advances in directed self assembly integration and manufacturability at 300 mm
Author(s): Benjamen Rathsack; Mark Somervell; Makato Muramatsu; Keiji Tanouchi; Takahiro Kitano; Eiichi Nishimura; Koichi Yatsuda; Seiji Nagahara; Hiroyuki Iwaki; Keiji Akai; Mariko Ozawa; Ainhoa Romo Negreira; Shigeru Tahara; Kathleen Nafus
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Progress in directed self-assembly hole shrink applications
Author(s): Todd R. Younkin; Roel Gronheid; Paulina Rincon Delgadillo; Boon Teik Chan; Nadia Vandenbroeck; Steven Demuynck; Ainhoa Romo-Negreira; Doni Parnell; Kathleen Nafus; Shigeru Tahara; Mark Somervell
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Process development of the EUVL negative-tone imaging at EIDEC
Author(s): Toshiya Takahashi; Ryuji Onishi; Toshiro Itani
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Sub-20nm lithography negative tone chemically amplified resists using cross-linker additives
Author(s): Prashant K. Kulshreshtha; Ken Maruyama; Sara Kiani; Scott Dhuey; Pradeep Perera; James Blackwell; Deirdre Olynick; Paul D. Ashby
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Investigation of trench and contact hole shrink mechanism in the negative tone develop process
Author(s): Sohan Singh Mehta; Craig Higgins; Vikrant Chauhan; Shyam Pal; Hui Peng Koh; Jean Raymond Fakhoury; Shaowen Gao; Lokesh Subramany; Salman Iqbal; Bumhwan Jeon; Pedro Morrison; Chris Karanikas; Yayi Wei; David R. Cho
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Negative tone imaging (NTI) with KrF: extension of 248nm IIP lithography to under sub-20nm logic device
Author(s): Tae-Hwan Oh; Tae-Sun Kim; Yura Kim; Jahee Kim; Sujeong Heo; Bumjoon Youn; Jaekyung Seo; Kwang-Sub Yoon; Byoung-il Choi
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EUV lithography performance of negative-tone chemically amplified fullerene resist
Author(s): A. Frommhold; D. X. Yang; A. McClelland; X. Xue; R. E. Palmer; A. P. G. Robinson
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Non-aqueous negative-tone development of inorganic metal oxide nanoparticle photoresists for next generation lithography
Author(s): Christine Y. Ouyang; Yeon Sook Chung; Li Li; Mark Neisser; Kyoungyong Cho; Emmanuel P. Giannelis; Christopher K. Ober
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New spin-on metal hardmask materials for lithography processes
Author(s): Huirong Yao; Salem Mullen; Elizabeth Wolfer; Dalil Rahman; Clement Anyadiegwu; Douglas Mckenzie; Alberto Dioses; Joonyeon Cho; Munirathna Padmanaban
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Development of KrF hybrid resist for a dual-isolation application
Author(s): Sen Liu; Steven Holmes; Kuang Jung Chen; Wu-song Huang; Ranee Kwong; Greg Breyta; Bruce Doris; Kangguo Cheng; Scott Luning; Maud Vinet; Laurent Grenouillet; Qing Liu; Matt Colburn; Chung-Hsi Wu
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Novel photoresist thin films with in-situ photoacid generator by molecular layer deposition
Author(s): Han Zhou; Stacey F. Bent
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Novel patternable and conducting metal-polymer nanocomposites: a step towards advanced mutlifunctional materials
Author(s): Pedro J. Rodríguez-Cantó; Mariluz Martínez-Marco; Rafael Abargues; Victor Latorre-Garrido; Juan P. Martínez-Pastor
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Metal-polymer nanocomposite resist: a step towards in-situ nanopatterns metallization
Author(s): R. Abargues; M. L. Martinez-Marco; P. J. Rodriguez-Canto; J. Marques-Hueso; J. P. Martinez-Pastor
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Advanced electron beam resist requirements and challenges
Author(s): Andrew Jamieson; Bennett Olson; Maiying Lu; Nathan Wilcox
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Effects on electron scattering and resist characteristics using assisting underlayers for e-beam direct write lithography
Author(s): Xaver Thrun; Kang-Hoon Choi; Norbert Hanisch; Christoph Hohle; Katja Steidel; Douglas Guerrero; Thiago Figueiro; Johann W. Bartha
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Sub-14 nm HSQ line patterning by e-beam dose proximity effect correction assisted with designed line CD/pitch split
Author(s): Wei-Su Chen; Chu-Ya Yang; Chiung Yu Lo; Hung-Wen Wei; Frederick T. Chen; Tzu-Kun Ku
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The evaluation of photo/e-beam complementary grayscale lithography for high topography 3D structure
Author(s): Liya Yu; Richard J. Kasica; Robert N. Newby; Lei Chen; Vincent K. Luciani
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Bottom-up/top-down high resolution, high throughput lithography using vertically assembled block bottle brush polymers
Author(s): Peter Trefonas; James W. Thackeray; Guorong Sun; Sangho Cho; Corrie Clark; Stanislav V. Verkhoturov; Michael J. Eller; Ang Li; Adriana Pavía-Jiménez; Emile A. Schweikert; Karen L. Wooley
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Novel EUV resist materials and process for 20nm half pitch and beyond
Author(s): Ken Maruyama; Ramakrishnan Ayothi; Yoshi Hishiro; Koji Inukai; Motohiro Shiratani; Tooru Kimura
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Progress in resolution, sensitivity, and critical dimensional uniformity of EUV chemically amplified resists
Author(s): James Thackeray; James Cameron; Vipul Jain; Paul LaBeaume; Suzanne Coley; Owendi Ongayi; Mike Wagner; Aaron Rachford; John Biafore
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Negative tone imaging process and materials for EUV lighography
Author(s): Shinji Tarutani; Wataru Nihashi; Shuuji Hirano; Natsumi Yokokawa; Hiroo Takizawa
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Underlayer and rinse materials for improving EUV resist performance
Author(s): Munirathna Padmanaban; JoonYeon Cho; Takanori Kudo; Salem Mullen; Huirong Yao; Go Noya; Yuriko Matsuura; Yasuaki Ide; Jin Li; Georg Pawlowski
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High absorbing resists based on trifluoromethacrylate-vinyl ether copolymers for EUV lithography
Author(s): Matthew D. Christianson; Matthew M. Meyer; Owendi Ongayi; David Valeri; Michael Wagner
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LWR study on resist formulation parameters
Author(s): Kyoungyoung Cho; Shinji Tarutani; Naoki Inoue; Hideaki Tsubaki; Mark Neisser
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Monitoring the evolution of line edge roughness during resist development using an analog of quenched flow kinetics
Author(s): M. I. Sanchez; L. K. Sundberg; G. M. Wallraff; W. D. Hinsberg; L. D. Bozano; H. D. Truong; K. Petrillo
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Evaluation of sensitivity for positive tone non-chemically and chemically amplified resists using ionized radiation: EUV, x-ray, electron and ion induced reactions
Author(s): Akihiro Oshima; Tomoko Gowa Oyama; Masakazu Washio; Seiichi Tagawa
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Study on dissolution behavior of polymer-bound and polymer-blended photo-acid generator (PAG) resists
Author(s): Hiroki Yamamoto; Takahiro Kozawa; Seiichi Tagawa
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Pattern wiggling investigation of self-aligned double patterning for 2x nm node NAND Flash and beyond
Author(s): You-Yu Lin; Chun-Chi Chen; Chia-Yu Li; Zih-Song Wang; Ching-Hua Chen
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Extendibility of self-aligned type multiple patterning for further scaling
Author(s): Shohei Yamauchi; Arisa Hara; Kenichi Oyama; Sakurako Natori; Masatoshi Yamato; Hidetami Yaegashi
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Process requirement of self-aligned multiple patterning
Author(s): Sakurako Natori; Shohei Yamauchi; Arisa Hara; Masatoshi Yamato; Kenichi Oyama; Hidetami Yaegashi
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Photoresist film analysis to investigate LWR generation mechanism
Author(s): Shinichi Nakamura; Kenji Mochida; Tooru Kimura; Kana Nakanishi; Naohiko Kawasaki; Naoki Man
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Theoretical study of deprotonation of polymer radical cation for EUV resist
Author(s): M. Endo; S. Tagawa
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Analysis of acid-generating action of PAG in an EUV resist using acid-sensitive dyes
Author(s): Atsushi Sekiguchi; Yoko Matsumoto; John J. Biafore
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Calculating development parameters for chemically amplified resists by the film-reducing method
Author(s): Atsushi Sekiguchi; Yoshihisa Sensu
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Study of swelling behavior in ArF resist during development by the QCM method (3): observations of swelling layer elastic modulus
Author(s): Atsushi Sekiguchi
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Light scattering by organic crosslinking material using nanomorphology of polymer blends
Author(s): Satoshi Takei; Naoya Kubo; Takumi Ichikawa; Kazuki Maekawa; Yoshiyuki Yokoyama
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Line edge roughness of high deprotection activation energy photoresist by using sub-millisecond post exposure bake
Author(s): Jing Jiang; Byungki Jung; Michael O. Thompson; Christopher K. Ober
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PEB to development delay influence on contact patterning by negative tone development process
Author(s): C. K. Chen; C. H. Lin; C. H. Huang; Elvis Yang; T. H. Yang; K. C. Chen; Chih-Yuan Lu
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Novel ArF photoresist polymer to suppress the roughness formation in plasma etching processes
Author(s): Keisuke Kato; Atsushi Yasuda; Shin-ichi Maeda; Takuji Uesugi; Takeru Okada; Akira Wada; Seiji Samukawa
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EUV lithography using water-developable resist material derived from biomass
Author(s): Satoshi Takei; Akihiro Oshima; Tomoko G. Oyama; Takumi Ichikawa; Atsushi Sekiguchi; Miki Kashiwakura; Takahiro Kozawa; Seiichi Tagawa
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Polarization selective photoresist based on reactive liquid crystals doped with a dichroic photoinitiator
Author(s): My-Phung Van; Cees W. M. Bastiaansen; Dick J. Broer
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Development of new xanthendiol derivatives applied to the negative-tone molecular resists for EB/EUVL
Author(s): Masatoshi Echigo; Masako Yamakawa; Yumi Ochiai; Yu Okada; Takashi Makinoshima; Masaaki Takasuka
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High scan speed EBL containing contact hole resists with low defectivity
Author(s): Tsung Ju Yeh; Lian Cong Liu; Yeh-Sheng Lin; Wei-Sheng Chen; Che-Yi Lin; Chia Hung Lin; Chun Chi Yu; Deyan Wang; Mingqi Li; Chunfeng Guo; Rick Hardy; Tom Estelle; Chengbai Xu; George Barclay; Peter Trefonas; Kathleen O'Connell
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Fabrication of optical film derived from biomass using eco-friendly nanoimprint lithography
Author(s): Satoshi Takei; Gaku Murakami; Yuto Mori; Takumi Ichikawa; Atsushi Sekiguchi; Tsutomu Obata; Yoshiyuki Yokoyama; Wataru Mizuno; Junji Sumioka; Yuji Horita
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The effects of reduced resist consumption process conditions on total raw defects, line and space defects and single line open defects at the 20nm node
Author(s): Christos F. Karanikas; Jeong Soo Kim
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Point-of-use filter membrane selection, start-up, and conditioning for low-defect photolithography coatings
Author(s): Nick Brakensiek; Michael Cronin
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Strategy for yield improvement with sub-10nm photochemical filtration
Author(s): J. Braggin; C. Brodsky; M. Linnane; P. Klymko
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Effects of dispense equipment sequence on process start-up defects
Author(s): Nick Brakensiek; Michael Sevegney
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Electron dose reduction through improved adhesion by cationic organic material with HSQ resist on an InGaAs multilayer system on GaAs substrate
Author(s): Wilfried Erfurth; Andrew Thompson; Nezih Ünal
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New negative resist design with novel photo-base generator
Author(s): Wen-Yun Wang; Cheng Han Wu; Yu-Chang Su; Chen-Hao Wu; Ya-Hui Chang; Ching-Yu Chang; Yao-Ching Ku
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High chi polymer development for DSA applications using RAFT technology
Author(s): Michael T. Sheehan; William B. Farnham; Hoang V. Tran; J. David Londono; Yefim Brun
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Release of MEMS devices with hard-baked polyimide sacrificial layer
Author(s): Javaneh Boroumand Azad; Imen Rezadad; Janardan Nath; Evan Smith; Robert E. Peale
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Postiive tone resists based on network deploymerization of molecular resists
Author(s): Richard A. Lawson; Jing Cheng; Ameneh Cheshmehkani; Laren M. Tolbert; Clifford L. Henderson
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