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Proceedings of SPIE Volume 8679

Extreme Ultraviolet (EUV) Lithography IV
Editor(s): Patrick P. Naulleau
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Volume Details

Volume Number: 8679
Date Published: 26 April 2013
Softcover: 90 papers (918) pages
ISBN: 9780819494610

Table of Contents
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Front Matter: Volume 8679
Author(s): Proceedings of SPIE
Effects of multilayer period on EUVL imaging for 2X node and beyond
Author(s): Su-Young Lee; Hwan-Seok Seo; Tae-Geun Kim; Sang-Hyun Kim; Roman Chalykh; Seong-Sue Kim; Chan-Uk Jeon
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Investigation of EUV pellicle feasibility
Author(s): Luigi Scaccabarozzi; Dan Smith; Pedro Rizo Diago; Eric Casimiri; Nina Dziomkina; Henk Meijer
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EUV resist materials design for 15nm half pitch and below
Author(s): Hideaki Tsubaki; Shinji Tarutani; Naoki Inoue; Hiroo Takizawa; Takahiro Goto
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Oxide nanoparticle EUV resists: toward understanding the mechanism of positive and negative tone patterning
Author(s): Souvik Chakrabarty; Christine Ouyang; Marie Krysak; Markos Trikeriotis; Kyoungyoung Cho; Emmanuel P. Giannelis; Christopher K. Ober
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Effect of leaving group design on EUV lithography performance
Author(s): Owendi Ongayi; Vipul Jain; Suzanne M. Coley; David Valeri; Amy Kwok; Dung Quach; Mike Wagner; Jim Cameron; Jim Thackeray
LPP-EUV light source development for high volume manufacturing lithography
Author(s): Hakaru Mizoguchi; Hiroaki Nakarai; Tamotsu Abe; Takeshi Ohta; Krzysztof M. Nowak; Yasufumi Kawasuji; Hiroshi Tanaka; Yukio Watanabe; Tsukasa Hori; Takeshi Kodama; Yutaka Shiraishi; Tatsuya Yanagida; Tsuyoshi Yamada; Taku Yamazaki; Shinji Okazaki; Takashi Saitou
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Advances in computer simulations of LPP sources for EUV lithography
Author(s): A. Hassanein; T. Sizyuk
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Lifetime and refurbishment of multilayer LPP collector mirrors
Author(s): Torsten Feigl; Marco Perske; Hagen Pauer; Tobias Fiedler; Sergiy Yulin; Norbert Kaiser; Andreas Tünnermann; Norbert R. Böwering; Alex I. Ershov; Silvia de Dea; Kay Hoffmann; Bruno La Fontaine; Igor V. Fomenkov; David C. Brandt
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Contamination concerns at the intermediate focus of an extreme ultraviolet light source
Author(s): David N. Ruzic; John Sporre; Dan Elg; Davide Curreli
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Dressed-photon nanopolishing for extreme ultraviolet mask substrate defect mitigation
Author(s): Ranganath Teki; Arun John Kadaksham; Frank Goodwin; Takashi Yatsui; Motoichi Ohtsu
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EUV mask defect analysis from mask to wafer printing
Author(s): Yoonsuk Hyun; Kangjoon Seo; Kyuyoung Kim; Inhwan Lee; Byounghoon Lee; Sunyoung Koo; Jongsu Lee; Sukkyun Kim; Seomin Kim; Myoungsoo Kim; Hyosang Kang
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Defect printability comparing actinic printing with advanced simulation for EUV masks
Author(s): Il-Yong Jang; Ranganath Teki; Vibhu Jindal; Frank Goodwin; Masaki Satake; Ying Li; Danping Peng; Sungmin Huh; Seong-Sue Kim
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EUV actinic blank inspection: from prototype to production
Author(s): Anna Tchikoulaeva; Hiroki Miyai; Tomohiro Suzuki; Kiwamu Takehisa; Haruhiko Kusunose; Takeshi Yamane; Tsuneo Terasawa; Hidehiro Watanabe; Soichi Inoue; Ichiro Mori
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Relationship between resist related outgassing and witness sample contamination in the NXE outgas qualification using electrons and EUV
Author(s): I. Pollentier; R. Lokasani; R. Gronheid; S. Hill; C. Tarrio; T. Lucatorto
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Resist outgassing contamination growth results using both photon and electron exposures
Author(s): Gregory Denbeaux; Yudhishthir Kandel; Genevieve Kane; Diego Alvardo; Mihir Upadhyaya; Yashdeep Khopkar; Alexander Friz; Karen Petrillo; Jaewoong Sohn; Chandra Sarma; Dominic Ashworth
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Study of EUV outgassing spatial distribution toward witness plate in the EUV outgas tester
Author(s): Yukiko Kikuchi; Eishi Shiobara; Hiroyuki Tanaka; Isamu Takagi; Kazuhiro Katayama; Norihiko Sugie; Toshiya Takahashi; Soichi Inoue; Takeo Watanabe; Tetsuo Harada; Hiroo Kinoshita
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Balancing lithographic performance and resist outgassing in EUV resists
Author(s): Shu-Hao Chang; Shu-Fang Chen; Ying-Yu Chen; Ming-Chin Chien; Shang-Chieh Chien; Tzu-Lih Lee; Jack J. H. Chen; Anthony Yen
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EUVL resist-based aberration metrology
Author(s): Germain L. Fenger; Sudharshanan Raghunathan; Lei Sun; Obert R. Wood; Bruce W. Smith
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In situ optical testing of exposure tools via localized wavefront curvature sensing
Author(s): Ryan Miyakawa; Xibin Zhou; Michael Goldstein; Dominic Ashworth; Kevin Cummings; Yu-Jen Fan; Yashesh Shroff; Gregory Denbeaux; Yudhi Kandel; Patrick Naulleau
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Application of phase shift focus monitor in EUVL process control
Author(s): Lei Sun; Sudhar Raghunathan; Vibhu Jindal; Eric Gullikson; Pawitter Mangat; Iacopo Mochi; Kenneth A. Goldberg; Markus P. Benk; Oleg Kritsun; Tom Wallow; Deniz Civay; Obert Wood
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EUV multilayer defect compensation (MDC) by absorber pattern modification, film deposition, and multilayer peeling techniques
Author(s): Linyong (Leo) Pang; Masaki Satake; Ying Li; Peter Hu; Danping Peng; Dongxue Chen; Vikram Tolani
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Evaluation of methods to improve EUV OPC model accuracy
Author(s): Tamer H.. Coskun; Chris Clifford; Germain Fenger; Gek Soon Chua; Keith Standiford; Ralph Schlief; Craig Higgins; Yi Zou
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Fast 3D thick mask model for full-chip EUVL simulations
Author(s): Peng Liu; Xiaobo Xie; Wei Liu; Keith Gronlund
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Process and proximity correction, and verification for extreme ultraviolet lithography
Author(s): Gökhan Perçin; Huixiong Dai; Hsu-Ting Huang; Anwei Liu; Ali Mokhberi; Xin Zheng; Chris Ngai
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Modeling strategies for EUV mask multilayer defect dispositioning and repair
Author(s): Andreas Erdmann; Peter Evanschitzky; Tristan Bret; Rik Jonckheere
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Evaluation of EUV resist performance with interference lithography towards 11 nm half-pitch and beyond
Author(s): Yasin Ekinci; Michaela Vockenhuber; Mohamad Hojeij; Li Wang; Nassir Mojarad
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Resist process applications to improve EUV patterning
Author(s): Karen Petrillo; Kyoungyoung Cho; Alexander Friz; Cecilia Montgomery; Dominic Ashworth; Mark Neisser; Stefan Wurm; Takashi Saito; Lior Huli; Akiteru Ko; Andrew Metz
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Development of molecular resist derivatives for EUV lithography
Author(s): D. Patrick Green; Vipul Jain; Brad Bailey; Mike Wagner; Michael Clark; David Valeri; Steve Lakso
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Relationship between stochastic effect and resist pattern defect in extreme ultraviolet lithography
Author(s): Takahiro Kozawa; Julius Joseph Santillan; Toshiro Itani
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EUV sensitive Si containing hard mask (Si-HM) for PTD and NTD process in EUVL
Author(s): Wataru Shibayama; Shuhei Shigaki; Rikimaru Sakamoto; Ryuji Onishi; Hiroaki Yaguchi; Bang Ching Ho
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Mask effects for high-NA EUV: impact of NA, chief-ray-angle, and reduction ratio
Author(s): Jens Timo Neumann; Paul Gräupner; Winfried Kaiser; Reiner Garreis; Bernd Geh
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Considerations for high-numerical aperture EUV lithography
Author(s): Harry J. Levinson; Pawitter Mangat; Thomas Wallow; Lei Sun; Paul Ackmann; Sheldon Meyers
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Projection optics for extreme ultraviolet lithography (EUVL) micro-field exposure tools (METs) with a numerical aperture of 0.5
Author(s): Holger Glatzel; Dominic Ashworth; Mark Bremer; Rodney Chin; Kevin Cummings; Luc Girard; Michael Goldstein; Eric Gullikson; Russ Hudyma; Jim Kennon; Bob Kestner; Lou Marchetti; Patrick Naulleau; Regina Soufli; Eberhard Spiller
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Mask 3D effects and compensation for high NA EUV lithography
Author(s): Sudharshanan Raghunathan; Greg McIntyre; Germain Fenger; Obert Wood
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Commissioning an EUV mask microscope for lithography generations reaching 8 nm
Author(s): Kenneth A. Goldberg; Iacopo Mochi; Markus Benk; Arnaud P. Allezy; Michael R. Dickinson; Carl W. Cork; Daniel Zehm; James B. Macdougall; Erik Anderson; Farhad Salmassi; Weilun L. Chao; Vamsi K. Vytla; Eric M. Gullikson; Jason C. DePonte; M. S. Gideon Jones; Douglas Van Camp; Jeffrey F. Gamsby; William B. Ghiorso; Hanjing Huang; William Cork; Elizabeth Martin; Eric Van Every; Eric Acome; Veljko Milanovic; Rene Delano; Patrick P. Naulleau; Senajith B. Rekawa
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Experimental phase defect printability evaluation using a programmed phase defect in EUVL mask
Author(s): Tsuneo Terasawa; Tsuyoshi Amano; Sunghyun Oh; Takeshi Yamane; Hidehiro Watanabe
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Challenges in EUV mask blank deposition for high volume manufacturing
Author(s): V. Jindal; P. Kearney; A. Antohe; M. Godwin; A. John; R. Teki; J. Harris-Jones; E. Stinzianni; Frank Goodwin
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Extending Ru capping layer durability under physical force cleaning
Author(s): SherJang Singh; Uwe Dietze; Peter Dress
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ASML's NXE platform performance and volume introduction
Author(s): Rudy Peeters; Sjoerd Lok; Erwin van Alphen; Noreen Harned; Peter Kuerz; Martin Lowisch; Henk Meijer; David Ockwell; Eelco van Setten; Guido Schiffelers; Jan-Willem van der Horst; Judon Stoeldraijer; Robert Kazinczi; Richard Droste; Hans Meiling; Ron Kool
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CO2/Sn LPP EUV sources for device development and HVM
Author(s): David C. Brandt; Igor V. Fomenkov; Nigel R. Farrar; Bruno La Fontaine; David W. Myers; Daniel J. Brown; Alex I. Ershov; Richard L. Sandstrom; Georgiy O. Vaschenko; Norbert R. Böwering; Palash Das; Vladimir B. Fleurov; Kevin Zhang; Shailendra N. Srivastava; Imtiaz Ahmad; Chirag Rajyaguru; Silvia De Dea; Wayne J. Dunstan; Peter Baumgart; Toshi Ishihara; Rod D. Simmons; Robert N. Jacques; Robert A. Bergstedt; Peter I. Porshnev; Christopher J. Wittak; Robert J. Rafac; Jonathan Grava; Alexander A. Schafgans; Yezheng Tao; Kay Hoffmann; Tedsuja Ishikawa; David R. Evans; Spencer D. Rich
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Optics for ASML's NXE:3300B platform
Author(s): Martin Lowisch; Peter Kuerz; Olaf Conradi; Gero Wittich; Wolfgang Seitz; Winfried Kaiser
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Through-focus EUV multilayer defect repair with nanomachining
Author(s): Gregory McIntyre; Emily Gallagher; Tod Robinson; Adam C. Smith; Mark Lawliss; Jeffrey LeClaire; Ron Bozak; Roy White; Michael Archuletta
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Patterning challenges of EUV lithography for 1X-nm node DRAM and beyond
Author(s): Tae-Seung Eom; Hong-Ik Kim; Choon-Ky Kang; Yoon-Jung Ryu; Seung-Hyun Hwang; Ho-Hyuk Lee; Hee-Youl Lim; Jeong-Su Park; Noh-Jung Kwak; Sungki Park
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Towards manufacturing a 10nm node device with complementary EUV lithography
Author(s): Jan V. Hermans; Huixiong Dai; Ardavan Niroomand; David Laidler; Ming Mao; Yongmei Chen; Philippe Leray; Chris Ngai; Shaunee Cheng
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Limitation of OAI + AttPSM in EUVL
Author(s): Shinn-Sheng Yu; Yen-Cheng Lu; Chih-Tsung Shih; Jack J. H. Chen; Anthony Yen
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Experimental verification of EUV mask limitations at high numerical apertures
Author(s): Rikon Chao; Paul Graeupner; Eric Gullikson; Seong-Sue Kim; Jens-Timo Neumann; Ryan Miyakawa; Hwan-Seok Seo; Andy Neureuther; Patrick Naulleau
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Homogeneity improvement of TiO2-SiO2 glass synthesized by the soot method and its evaluation using the ultrasonic measurement system
Author(s): Masahiro Kawagishi; Junko Konishi; Masaaki Takata; Mototaka Arakawa; Yuji Ohashi; Jun-ichi Kushibiki
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Inspection and compositional analysis of sub-20 nm EUV mask blank defects by thin film decoration technique
Author(s): V. Jindal; A. John; J. Harris-Jones; P. Kearney; A. Antohe; E. Stinzianni; F. Goodwin; T. Onoue
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Propagation of surface topography of EUV blank substrate through multilayer and impact of phase defect structure on wafer image
Author(s): Tsuyoshi Amano; Tsuneo Terasawa
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Modeling studies on alternative EUV mask concepts for higher NA
Author(s): Andreas Erdmann; Tim Fühner; Peter Evanschitzky; Jens Timo Neumann; Johannes Ruoff; Paul Gräupner
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Low thermal expansion material (LTEM) cleaning and optimization for extreme ultraviolet (EUV) blank deposition
Author(s): Arun John Kadaksham; Ranganath Teki; Milton Godwin; Matt House; Frank Goodwin
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Evaluation of novel projection electron microscopy (PEM) optics for EUV mask inspection
Author(s): Ryoichi Hirano; Susumu Iida; Tsuyoshi Amano; Tsuneo Terasawa; Hidehiro Watanabe; Kenji Terao
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Registration accuracy improvement of fiducial mark on EUVL mask with MIRAI EUV ABI prototype
Author(s): Tetsunori Murachi; Tsuyoshi Amano
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Study on EUV mask defect inspection with hp 16nm node using simulated projection electron microscope images
Author(s): Susumu Iida; Tsuyoshi Amano; Ryoichi Hirano; Tsuneo Terasawa; Hidehiro Watanabe
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Development of 3D Monte Carlo simulations for predicting multilayer geometry of pit-type EUV defects
Author(s): Robert F. Spivey; Ranganath Teki; T.-M. Lu
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Effect of phase defect shape on ABI signal intensity and defect image intensity on wafer with simulation
Author(s): Noriaki Takagi; Tsuneo Terasawa; Yukiyasu Arisawa
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Mathematical model for calculating speckle contrast through focus
Author(s): Rene A. Claus; Andrew R. Neureuther; Patrick P. Naulleau
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Evaluating the effect of EUV multilayer buried defects on feature printability using a stochastic resist model
Author(s): Trey Graves; John Biafore; Mark Smith; Stewart Robertson; Chao Fang
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Effects of varying the parameters in witness-sample-based photoresist outgas testing: dependence of the carbon growth on pumping speed and the dose, time, and area of resist exposure
Author(s): C. Tarrio; R. F. Berg; S. B. Hill; S. Grantham; N. S. Faradzhev; T. B. Lucatorto
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Status of EUV reflectometry at PTB
Author(s): Christian Laubis; Annett Barboutis; Martin Biel; Christian Buchholz; Benjamin Dubrau; Andreas Fischer; Anne Hesse; Jana Puls; Christian Stadelhoff; Victor Soltwisch; Frank Scholze
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Hartmann wavefront sensor for EUV radiation
Author(s): K. Mann; B. Flöter; T. Mey; B. Schäfer; B. Keitel; E. Plönjes; K. Tiedtke
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A reverse design method for EUV lithography illumination system
Author(s): Qiuli Mei; Yanqiu Li; Fei Liu
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Patterning at 6.5 nm wavelength using interference lithography
Author(s): Nassir Mojarad; Michaela Vockenhuber; Li Wang; Bernd Terhalle; Yasin Ekinci
Show Abstract
Simulation analysis of LER and dose tradeoffs for EUV resists with photo-decomposable quenchers
Author(s): Suchit Bhattarai; Andrew R. Neureuther; Patrick P. Naulleau
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Relation between sensitivity and resolution in polymer bound PAGs and polymer blend PAGs
Author(s): Satoshi Enomoto; Tuan Nguyen Dang; Cong Que Dinh; Seiichi Tagawa
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Stochastic resist patterning simulation using attenuated PSM for EUV lithography
Author(s): Seongchul Hong; Seejun Jeong; Jae Uk Lee; Seung Min Lee; Jongseok Kim; Jonggul Doh; Jinho Ahn
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Quencher distribution engineering of out-of-band insensitive EUV resists: experiments and stochastic simulation
Author(s): Shang-Chieh Chien; Shu-Hao Chang; Jui-Ching Wu; Jack J. H. Chen; Anthony Yen
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Prediction of resist sensitivity for 13.5-nm EUV and 6.x-nm EUV extension from sensitivity for EBL
Author(s): Tomoko G. Oyama; Akihiro Oshima; Tuan Nguyen Dang; Satoshi Enomoto; Masakazu Washio; Seiichi Tagawa
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Study of LWR reduction and pattern collapse suppression for 16nm node EUV resists
Author(s): Eishi Shiobara; Yukiko Kikuchi; Toshiro Itani
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Reaction mechanisms of various chemically amplified EUV and EB resist
Author(s): Satoshi Enomoto; Akihiro Oshima; Seiichi Tagawa
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Development of an atomic hydrogen system for treatment of EUV mask blanks
Author(s): Tyler R. Mowll; Arun J. Kadaksham; Zachary R. Robinson; Sarah Mead; Carl A. Ventrice; Frank Goodwin
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Resist outgassing characterization based on the resist compositions and process
Author(s): Norihiko Sugie; Toshiya Takahashi; Kazuhiro Katayama; Isamu Takagi; Yukiko Kikuchi; Hiroyuki Tanaka; Eishi Shiobara; Soichi Inoue
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Collector optic in-situ Sn removal using hydrogen plasma
Author(s): John R. Sporre; Dan Elg; David N. Ruzic; Shailendra N. Srivastava; Igor V. Fomenkov; David C. Brandt
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Laser produced plasma EUV light source for EUVL patterning at 20nm node and beyond
Author(s): Igor V. Fomenkov; David C. Brandt; Nigel R. Farrar; Bruno La Fontaine; Norbert R. Böwering; Daniel J. Brown; Alex I. Ershov; David W. Myers
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Important processes in modeling and optimization of EUV lithography sources
Author(s): T. Sizyuk; A. Hassanein
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Magnetic mitigation of debris for EUV sources
Author(s): D. Elg; J. Sporre; D. Curreli; D. N. Ruzic; K. R. Umstadter
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Enhancing resolution with pupil filtering for projection printing systems with fixed or restricted illumination angular distribution
Author(s): Greg McIntyre; Leon Teeuwen; Erik Sohmen; Obert Wood; Daniel Corliss; Theo van den Akker; Sander Bouten; Eelco van Setten; Oleg Voznyi; Sang-In Han; Hermann Bieg; Martin Burkhardt; Karen Petrillo; Zhengqing John Qi; Alexander Friz
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Roughness and variability in EUV lithography: Who is to blame? (part 1)
Author(s): Alessandro Vaglio Pret; Roel Gronheid; Todd R. Younkin; Gustaf Winroth; John J. Biafore; Yusuke Anno; Kenji Hoshiko; Vassilios Constantoudis
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7nm node EUV predictive study of mask LER transference to wafer
Author(s): D. Civay; E. Nash; U. Klostermann; T. Wallow; P. Mangat; H. P. Koh; P. Brooker; J. Siebert; H. J. Levinson
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Silica aerogel can capture flying particles in EUV tools
Author(s): Kazuya Ota; Jiro Inoue
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Impact of EUV mask roughness on lithography performance
Author(s): Yukiyasu Arisawa; Tsuneo Terasawa; Hidehiro Watanabe
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Simulation-assisted layout biasing in EUV lithography and prediction of an optimum resist parameter space
Author(s): Chandra Sarma; John Biafore; Kyoungyong Cho; Karen Petrillo; Mark Neisser
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Deep ultraviolet out-of-band characterization of EUVL scanners and resists
Author(s): Gian F. Lorusso; Tasaku Matsumiya; Jun Iwashita; Taku Hirayama; Eric Hendrickx
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Investigation of coat-develop track system for EUV resist processing
Author(s): Masahiko Harumoto; Osamu Tamada; Tadashi Miyagi; Koji Kaneyama; Akihiko Morita; Charles Pieczulewski; Masaya Asai
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Heat behavior of extreme-ultraviolet pellicle including mesh support
Author(s): In-Seon Kim; Eun-Jin Kim; Ji-Won Kim; Hye-Keun Oh
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The need for EUV lithography at advanced technology for sustainable wafer cost
Author(s): Arindam Mallik; Wim Vansumere; Julien Ryckaert; Abdelkarim Mercha; Naoto Horiguchi; Steven Demuynck; Jürgen Bömmels; Tokei Zsolt; Geert Vandenberghe; Kurt Ronse; Aaron Thean; Diederik Verkest; Hans Lebon; An Steegen
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The study of novel PAG containing acid amplifier in EUV resist material
Author(s): Hyun Sang Joo; Jin Ho Kim; Joon Hee Han; Chang Wan Bae; Jin Bong Shin; Hyun Soon Lim; Seung Duk Cho; Sam Min Kim
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Optimizing XPS tool performance for characterizing trace contamination elements for EUV resist outgas testing
Author(s): Mihir Upadhyaya; Yudhishthir Kandel; Gregory Denbeaux; Cecilia Montgomery; Yu-Jen Fan
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Effect of cleaning on EUV masks
Author(s): Jeffrey W. Roberts
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