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Proceedings of SPIE Volume 8522

Photomask Technology 2012
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Volume Details

Volume Number: 8522
Date Published: 14 November 2012
Softcover: 84 papers (784) pages
ISBN: 9780819492609

Table of Contents
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Front Matter: Volume 8522
Author(s): Proceedings of SPIE
Transform designs to chips, an end user point of view on mask making
Author(s): John Y. Chen
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2012 Mask Industry Survey
Author(s): Matt Malloy; Lloyd C. Litt
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Improving CD uniformity using MB-MDP for 14nm node and beyond
Author(s): Byung Gook Kim; Jin Choi; Jisoong Park; Chan Uk Jeon; Sterling Watson; Anthony Adamov; Bob Pack; Ingo Bork
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Impact of an etched EUV mask black border on imaging and overlay
Author(s): Natalia Davydova; Robert de Kruif; Norihito Fukugami; Shinpei Kondo; Vicky Philipsen; Eelco van Setten; Brid Connolly; Ad Lammers; Vidya Vaenkatesan; John Zimmerman; Noreen Harned
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An enhanced measure of mask quality using separated models
Author(s): Anthony Adamov; Bob Pack; Kazuyuki Hagiwara; Ingo Bork; Jin Choi; Jissong Park; Byung-Gook Kim
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Cold-development tool and technique for the ultimate resolution of ZEP520A to fabricate an EB master mold for nano-imprint lithography for 1Tbit/inch2 BPM development
Author(s): Hideo Kobayashi; Hiromasa Iyama; Takeshi Kagatsume; Tsuyoshi Watanabe
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Improvement of lithographic performance and reduction of mask cost by simple OPC
Author(s): Koichiro Tsujita; Koji Mikami; Hiroyuki Ishii; Tadashi Arai; Ryo Nakayama; Michael C. Smayling; Valery Axelrad; Hidetami Yaegashi; Kenichi Oyama
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A profile-aware resist model with variable threshold
Author(s): Sylvain Moulis; Vincent Farys; Jérôme Belledent; Romain Thérèse; Song Lan; Qian Zhao; Mu Feng; Laurent Depre; Russell Dover
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CD control with defect inspection: you can teach an old dog a new trick
Author(s): Clemens Utzny; Albrecht Ullrich; Jan Heumann; Elias Mohn; Stefan Meusemann; Rolf Seltmann
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Study of critical dimension uniformity (CDU) using a mask inspector
Author(s): Mei-Chun Lin; Ching-Fang Yu; Mei-Tsu Lai; Luke T. H. Hsu; Angus Chin; Anthony Yen
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Impact of mask CDU and local CD variation on intra-field CDU
Author(s): Junji Miyazaki; Orion Mouraille; Jo Finders; Masaru Higuchi; Yosuke Kojima; Shunsuke Sato; Hiroaki Morimoto
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Correlation between reticle- and wafer-CD difference of multiple 28nm reticle-sites
Author(s): Guoxiang Ning; Frank Richter; Thomas Thamm; Paul Ackmann; Marc Staples; Francois Weisbuch; Karin Kurth; Joerg Schenker; Andre Leschok; Fang Hong GN
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Impact of EUVL mask surface roughness on an actinic blank inspection image and a wafer image
Author(s): Takeshi Yamane; Tsuneo Terasawa
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Illuminating EUVL mask defect printability
Author(s): Karen D. Badger; Zhengqing John Qi; Emily Gallagher; Kazunori Seki; Gregory McIntyre
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EUV multilayer defect compensation (MDC) by absorber pattern modification: improved performance with deposited material and other progresses
Author(s): Linyong Pang; Masaki Satake; Ying Li; Peter Hu; Vikram Tolani; Danping Peng; Dongxue Chen; Bob Gleason
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Capability of model EBEYE M for EUV mask production
Author(s): Masato Naka; Shinji Yamaguchi; Motoki Kadowaki; Toru Koike; Takashi Hirano; Masamitsu Itoh; Yuichiro Yamazaki; Kenji Terao; Masahiro Hatakeyama; Kenji Watanabe; Hiroshi Sobukawa; Takeshi Murakami; Kiwamu Tsukamoto; Takehide Hayashi; Ryo Tajima; Norio Kimura; Naoya Hayashi
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Electron beam inspection of 16nm HP node EUV masks
Author(s): Takeya Shimomura; Shogo Narukawa; Tsukasa Abe; Tadahiko Takikawa; Naoya Hayashi; Fei Wang; Long Ma; Chia-Wen Lin; Yan Zhao; Chiyan Kuan; Jack Jau
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EUV mask inspection study for sub-20nm device
Author(s): Inkyun Shin; Gisung Yoon; Ji Hoon Na; Paul D. H. Chung; Chan-Uk Jeon
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The E-beam resist test facility: performance testing and benchmarking of E-beam resists for advanced mask writers
Author(s): Matt Malloy; Il Yong Jang; Mac Mellish; Lloyd C. Litt; Ananthan Raghunathan; John Hartley
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Conductive layer for charge dissipation during electron-beam exposures
Author(s): Luisa D. Bozano; Ratnam Sooriyakumaran; Takayuki Nagasawa; Satoshi Watanabe; Yoshio Kawai; Shinpei Kondo; Jun Kotani; Masayuki Kagawa; Linda K. Sundberg; Martha I. Sanchez; Elizabeth M. Lofano; Charles T. Rettner; Tasuku Senna; Thomas Faure
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Mask characterization for CDU budget breakdown in advanced EUV lithography
Author(s): Peter Nikolsky; Chris Strolenberg; Rasmus Nielsen; Tjitte Nooitgedacht; Natalia Davydova; Greg Yang; Shawn Lee; Chang-Min Park; Insung Kim; Jeong-Ho Yeo
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Process challenges in advanced photomask etch processes
Author(s): Chang Ju Choi; Karmen Yung; Cheng-Hsin Ma; Ganesh Vanamu
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Advanced photomask fabrication process to increase pattern reliability for sub-20nm node
Author(s): Dong Il Shin; Sang Jin Jo; Hee Yeon Jang; Yun Ki Hong; Dae Ho Hwang; Chung Seon Choi; Dong Sik Jang; Ho Yong Jung; Tae Joong Ha; Sang Pyo Kim; Dong Gyu Yim
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Study and comparison of negative tone resists for fabrication of bright field masks for 14nm node
Author(s): Amy E. Zweber; Tom Faure; Anne McGuire; Linda K. Sundberg; Ratnam Sooriyakumaran; Martha I. Sanchez; Luisa D. Bozano; Tasuku Senna; Yuki Fujita; Yoshiyuki Negishi; Masahito Tanabe; Takahiro Kaneko
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Novel DPT methodology co-optimized with design rules for sub-20nm device
Author(s): Hyun-Jong Lee; Soo-Han Choi; Jae-Seok Yang; Kwan-Young Chun; Jeong-ho Do; Chul-Hong Park
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Mask design automation: an integrated approach
Author(s): Richard Gladhill; Peter Buck; Al Wong
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Generating well-behaved OASIS files for mask data processing
Author(s): D. Hung; J. P. Canepa; K. Kuo; J. G. Jou
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Automatic marking by use of MRCC range pattern matching for advanced MDP
Author(s): D. Salazar; W. Moore; J. Valadez
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Choosing the data flow paradigm for EUV mask process corrections
Author(s): Christian Bürgel; Keith Standiford; Gek Soon Chua
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Bridging the gaps between mask inspection/review systems and actual wafer printability using computational metrology and inspection (CMI) technologies
Author(s): Linyong Pang; Vikram Tolani; Masaki Satake; Peter Hu; Danping Peng; Tingyang Liu; Dongxue Chen; Bob Gleason; Anthony Vacca
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Advanced module for model parameter extraction using global optimization and sensitivity analysis for electron beam proximity effect correction
Author(s): Thiago Figueiro; Kang-Hoon Choi; Manuela Gutsch; Martin Freitag; Christoph Hohle; Jean-Hervé Tortai; Mohamed Saib; Patrick Schiavone
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Sub-20-nm node photomask cleaning enhancement by controlling zeta potential
Author(s): Kuan-Wen Lin; Chi-Lun Lu; Chin-Wei Shen; Luke Hsu; Angus Chin; Anthony Yen
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Effect of radiation exposure on the surface adhesion of Ru-capped MoSi multilayer blanks
Author(s): Göksel Durkaya; Abbas Rastegar; Hüseyin Kurtuldu
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The plasma etching methods for minimizing mask CD variation by cleaning process
Author(s): Hyun Duck Shin; Soo Kyeong Jeong; Ho Yong Jung; Sang Pyo Kim; Dong Gyu Yim
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Preparation of substrates for EUV blanks using an etch clean process to meet HVM challenges
Author(s): Arun John Kadaksham; Ranganath Teki; Jenah Harris-Jones; C. C. Lin
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Study of droplet spray impact on a photomask surface
Author(s): SherJang Singh; Uwe Dietze; Peter Dress
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A new approach in dry technology for non-degrading optical and EUV mask cleaning
Author(s): Ivin Varghese; Ben Smith; Mehdi Balooch; Chuck Bowers
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The significance of rigorous electromagnetic field simulation on mask development for 20nm optical lithography technology
Author(s): Fan Jiang; Yunfei Deng; Jongwook Kye; Harry J. Levinson; Paul Ackmann; Byoung Il Choi; Frank Schurack; Martin Sczyrba
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The new test pattern selection method for OPC model calibration, based on the process of clustering in a hybrid space
Author(s): Dmitry Vengertsev; Kihyun Kim; Seung-Hune Yang; Seongbo Shim; Seongho Moon; Artem Shamsuarov; Sooryong Lee; Seong-Woon Choi; Jungdal Choi; Ho-Kyu Kang
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OPC and verification for LELE double patterning
Author(s): Kellen Arb; Chris Reid; Qiao Li; Evgueni Levine; Pradiptya Ghosh
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Photomask film degradation effects in the wafer fab: how to detect and monitor over time
Author(s): John Whittey; Carl Hess; Edgardo Garcia; Mark Wagner; Brian Duffy
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Reticle storage in microenvironments with extreme clean dry air
Author(s): Astrid Gettel; Detlev Glüer; Alfred Honold
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Proposal of an extended loading effect correction for EBM-8000
Author(s): Hiroshi Matsumoto; Yasuo Kato; Noriaki Nakayamada; Shusuke Yoshitake; Kiyoshi Hattori
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Printing results of a proof-of-concept 50keV electron multi-beam mask exposure tool (eMET POC)
Author(s): Elmar Platzgummer; Christof Klein; Hans Loeschner
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Shape-dependent dose margin correction using model-based mask data preparation
Author(s): Yasuki Kimura; Ryuuji Yamamoto; Takao Kubota; Kenji Kouno; Shohei Matsushita; Kazuyuki Hagiwara; Daisuke Hara
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Reflective electron-beam lithography performance for the 10nm logic node
Author(s): Regina Freed; Thomas Gubiotti; Jeff Sun; Anthony Cheung; Jason Yang; Mark McCord; Paul Petric; Allen Carroll; Upendra Ummethala; Layton Hale; John Hench; Shinichi Kojima; Walter Mieher; Chris F. Bevis
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Future mask writers requirements for the sub-10nm node era
Author(s): Mahesh Chandramouli; Frank Abboud; Nathan Wilcox; Andrew Sowers; Damon Cole
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EUVL mask repair: expanding options with nanomachining
Author(s): Emily Gallagher; Gregory McIntyre; Mark Lawliss; Tod Robinson; Ronald Bozak; Roy White; Jeff LeClaire
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E-beam based mask repair as door opener for defect free EUV masks
Author(s): Markus Waiblinger; Tristan Bret; Rik Jonckheere; Dieter Van den Heuvel
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Computational defect review for wafer-fab reticle requal, part 1: mask plane inspections
Author(s): Vikram Tolani; Grace Dai; Suresh Lakkapragada; Peter Hu; Kechang Wang; Lin He; Ying Li; Danping Peng; George Hwa; Linyong Pang
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Study of the Durability of the Ru-capped MoSi Multilayer Surface Under Megasonic cleaning
Author(s): Hüseyin Kurtuldu; Abbas Rastegar; Matthew House
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Controlling MegaSonic performance by optimizing cleaning media's physical and gaseous properties
Author(s): Hrishi Shende; SherJang Singh; James Baugh; Uwe Dietze; Peter Dress
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Linear Time EUV Blank Defect Mitigation Algorithm Considering Tolerance to Inspection Inaccuracy
Author(s): Yuelin Du; Hongbo Zhang; Martin D. F. Wong
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Efficient simulation of EUV multilayer defects with rigorous data base approach
Author(s): Peter Evanschitzky; Feng Shao; Andreas Erdmann
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Fiducial mark requirements from the viewpoints of actinic blank inspection tool for phase-defect mitigation on EUVL mask
Author(s): Tetsunori Murachi; Tsuyoshi Amano; Sung Hyun Oh
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EUVL mask inspection at Hydrogen Lyman Alpha
Author(s): Thiago S. Jota; Tom D. Milster
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EUV mask blank defect avoidance solutions assessment
Author(s): Ahmad Elayat; Peter Thwaite; Steffen Schulze
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Backside defect printability for contact layer with different reticle blank material
Author(s): Guoxiang Ning; Christian Holfeld; Daniel Fischer; Paul Ackmann; Andre Holfeld; Karin Kurth; Martin Sczyrba; Tino Hertzsch; Rolf Seltmann; Angeline Ho; Fang Hong GN
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Key issues in automatic classification of defects in post-inspection review process of photomasks
Author(s): Mark Pereira; Manabendra Maji; Ravi R. Pai; Samir B. V. R.; Seshadri R.; Pradeepkumar Patil
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RDMS: a Windows and tablet PC based reticle defect search database with AHDC for interconnected mask and wafer fabs
Author(s): Saghir Munir; Gul Qidwai
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Status of the AIMS(TM) EUV Project
Author(s): Anthony D. Garetto; Jan Hendrik Peters; Sascha Perlitz; Ulrich Matejka; Dirk Hellweg; Markus R. Weiss
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Double patterning for 20nm and beyond: design rules aware splitting
Author(s): Tamer Desouky; David Abercrombie; Hojun Kim; Soo-Han Choi
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Placement-aware decomposition of a digital standard cells library for double patterning lithography
Author(s): Amr G. Wassal; Heba Sharaf; Sherif Hammouda
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Novel customized manufacturable DFM solutions
Author(s): Mark Lu; Cong-shu Zhou; Yi Tian; Soo Muay Goh; Shyue-Fong Quek; Hein-Mun Lam; Jian Zhang
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Enhancement of correction for mask process through dose correction on already geometrically corrected layout data
Author(s): Murali M. Reddy; Bhardwaj D. S. S.; Nageswara Rao; Archana Rajagopalan; Ravi R. Pai
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Efficient Boolean and multi-input flow techniques for advanced mask data processing
Author(s): Daniel Salazar; Bill Moore; John Valadez
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Split-it!: from litho etch litho etch to self-aligned double patterning decomposition
Author(s): Yasmine A. Badr; Amr G. Wassal; Sherif Hammouda
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Photomask quality evaluation using lithography simulation and precision SEM image contour data
Author(s): Tsutomu Murakawa; Naoki Fukuda; Soichi Shida; Toshimichi Iwai; Jun Matsumoto; Takayuki Nakamura; Kazuyuki Hagiwara; Shohei Matsushita; Daisuke Hara; Anthony Adamov
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Correcting image placement errors using registration control (RegC®) technology in the photomask periphery
Author(s): Avi Cohen; Falk Lange; Guy Ben-Zvi; Erez Graitzer; Dmitriev Vladimir
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Comparison of critical dimension measurements of a mask inspection system with a CD-SEM
Author(s): Jan P. Heumann; Albrecht Ullrich; Clemens S. Utzny; Stefan Meusemann; Frank Kromer; John M. Whittey; Edgardo Garcia; Mark Wagner; Norbert J. Schmidt
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Study for compensation of unexpected image placement error caused by VSB mask writer deflector
Author(s): Hyun-joo Lee; Min-kyu Choi; Seong-yong Moon; Han-Ku Cho; Jonggul Doh; Jinho Ahn
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Proximity effect correction optimizing image quality and writing time for an electron multi-beam mask writer
Author(s): T. Klimpel; J. Klikovits; R. Zimmermann; M. Schulz; Alex Zepka; H.-J. Stock
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Evaluation of CP shape correction for e-beam writing
Author(s): Masahiro Takizawa; Keita Bunya; Hideaki Isobe; Hideaki Komami; Kenji Abe; Masaki Kurokawa; Akio Yamada; Kiichi Sakamoto; Takayuki Nakamura; Kazusumi Kuwano; Masahiro Tateishi; Larry Chau
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Impact of EUV photomask line-edge roughness on wafer prints
Author(s): Zhengqing John Qi; Emily Gallagher; Yoshiyuki Negishi; Gregory McIntyre; Amy Zweber; Tasuku Senna; Satoshi Akutagawa; Toshio Konishi
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Reticle and Wafer CD Variation for Different Dummy Pattern
Author(s): GuoXiang Ning; Christian Buergel; Paul Ackmann; Marc Staples; Thomas Thamm; Chin Teong Lim; Andre Leschok; Stefan Roling; Anthony Zhou; Fang Hong Gn; Frank Richter
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Bimetallic grayscale photomasks for micro-optics fabrication using dual wavelength laser writing techniques
Author(s): Reza Qarehbaghi; Glenn H. Chapman
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CD uniformity improvement through elimination of hardware influences on post-exposure bake
Author(s): Jong Hoon Lim; Sung Ha Woo; Eui-Sang Park; Sang Pyo Kim; Dong Gyu Yim; Osamu Katada; Tobias Wähler; Peter Dress; Uwe Dietze
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Photomask etch: addressing the resist challenges for advanced phase-shift and binary photomasks
Author(s): Michael Grimbergen; Madhavi Chandrachood; Keven Yu; Toi Yue Becky Leung; Amitabh Sabharwal; Ajay Kumar
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Hotspot classification based on higher-order local autocorrelation
Author(s): Bin Lin; Zheng Shi; Ye Chen
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Proximity effect correction parameters for patterning of EUV reticles with Gaussian electron-beam lithography
Author(s): Adam Lyons; John Hartley
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Particle transport in plasma systems for development of EUVL mask blanks
Author(s): Peter Stoltz; Alex Likhanskii; Chuandong Zhou; Vibhu Jindal; Patrick Kearney
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Dry etching technologies for reflective multilayer
Author(s): Yoshinori Iino; Makoto Karyu; Hirotsugu Ita; Yoshihisa Kase; Tomoaki Yoshimori; Makoto Muto; Mikio Nonaka; Munenori Iwami
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Nanoparticle detection limits of TNO's Rapid Nano: modeling and experimental results
Author(s): Peter van der Walle; Pragati Kumar; Dmitry Ityaksov; Richard Versulis; Diederik J. Maas; Olaf Kievit; Jochem Janssen; Jacques C. J. van der Donck
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Interactions of 3D mask effects and NA in EUV lithography
Author(s): Jens Timo Neumann; Paul Gräupner; Winfried Kaiser; Reiner Garreis; Bernd Geh
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