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PROCEEDINGS VOLUME 8325

Advances in Resist Materials and Processing Technology XXIX
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Volume Details

Volume Number: 8325
Date Published: 27 April 2012

Table of Contents
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Front Matter: Volume 8325
Author(s): Proceedings of SPIE
Factors that determine the optimum dose for sub-20nm resist systems: DUV, EUV, and e-beam options
Author(s): Moshe Preil
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Optical performance comparison between negative tone development and positive tone development
Author(s): Seung-Hune Yang; Eun Sung Kim; Seongho Moon; Sooryong Lee; Seong-Woon Choi; Jungdal Choi
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Functional resist materials for negative tone development in advanced lithography
Author(s): Shinji Tarutani; Kana Fujii; Kei Yamamoto; Kaoru Iwato; Michihiro Shirakawa
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Assessment of negative tone development challenges
Author(s): Sohan Singh Mehta; Yongan Xu; Guillaume Landie; Vikrant Chauhan; Sean D. Burns; Peggy Lawson; Bassem Hamieh; Jerome Wandell; Martin Glodde; Yu Yang Sun; Mark Kelling; Alan Thomas; Jeong Soo Kim; James Chen; Hirokazu Kato; Chiahsun Tseng; Chiew-Seng Koay; Yoshinori Matsui; Martin Burkhardt; Yunpeng Yin; David Horak; Shyng-Tsong Chen; Yann Mignot; Yannick Loquet; Matthew Colburn; John Arnold; Terry Spooner; Lior Huli; Dave Hetzer; Jason Cantone; Shinichiro Kawakami; Shannon Dunn
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Evolution of negative tone development photoresists for ArF lithography
Author(s): Michael Reilly; Cecily Andes; Thomas Cardolaccia; Young Seok Kim; Jong Keun Park
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Optimization of low-diffusion EUV resist for linewidth roughness and pattern collapse on various substrates
Author(s): James W. Thackeray; James F. Cameron; Michael Wagner; Suzanne Coley; Owendi Ongayi; Warren Montgomery; Dave Lovell; John Biafore; Vidhya Chakrapani; Akiteru Ko
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EUV resist materials for 20nm and below half-pitch applications
Author(s): Hideaki Tsubaki; Shinji Tarutani; Hiroo Takizawa; Takahiro Goto
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EUV resist development for 16nm half pitch
Author(s): Ken Maruyama; Hiroki Nakagawa; Shalini Sharma; Yoshi Hishiro; Makoto Shimizu; Tooru Kimura
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Overview: continuous evolution on double-patterning process
Author(s): Hidetami Yaegashi; Kenichi Oyama; Arisa Hara; Sakurako Natori; Shohei Yamauchi
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CD uniformity improvement on the self-aligned spacer double-patterning process by resist material modification
Author(s): Katsumi Ohmori; Naoto Motoike; Hidetami Yaegashi; Kenichi Oyama
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SADP for BEOL using chemical slimming with resist mandrel for beyond 22nm nodes
Author(s): Linus Jang; Sudhar Raghunathan; E. Todd Ryan; Jongwook Kye; Harry J. Levinson; Shannon Dunn; David Hetzer; Shinichiro Kawakami; Lior Huli
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Comparison of directed self-assembly integrations
Author(s): Mark Somervell; Roel Gronheid; Joshua Hooge; Kathleen Nafus; Paulina Rincon Delgadillo; Chris Thode; Todd Younkin; Koichi Matsunaga; Ben Rathsack; Steven Scheer; Paul Nealey
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Application of stochastic modeling to resist optimization problems
Author(s): John J. Biafore; Mark D. Smith
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Correlated surface roughening during photoresist development
Author(s): Chris A. Mack
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Mesoscale simulation of the line-edge structure during positive and negative tone resist development process
Author(s): Hiroshi Morita; Ichiro Okabe; Saurabh Agarwal; Vivek K. Singh
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Line-pattern collapse mitigation status for EUV at 32nm HP and below
Author(s): Michael Carcasi; Derek Bassett; Wallace Printz; Shinichiro Kawakami; Yuichiro Miyata
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Simultaneous calibration of acid diffusion and developer loading parameters for computational lithography
Author(s): Ashesh Parikh
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Investigation of acid diffusion during laser spike annealing with systematically designed photoacid generators
Author(s): Marie Krysak; Byungki Jung; Michael O. Thompson; Christopher K. Ober
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Deprotection reaction kinetics in chemically amplified photoresists determined by sub-millisecond post exposure bake
Author(s): Byungki Jung; Christopher K. Ober; Michael O. Thompson
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Contrast improvement with balanced diffusion control of PAG and PDB
Author(s): S. F. Chen; L. L. Chang; Y. H. Chang; C. C. Huang; C. Y. Chang; Y. Ku
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An in situ analysis of the resist pattern formation process
Author(s): Julius Joseph Santillan; Toshiro Itani
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Understanding dissolution behavior of 193nm photoresists in organic solvent developers
Author(s): Seung-Hyun Lee; Jong Keun Park; Thomas Cardolaccia; Jibin Sun; Cecily Andes; Kathleen O'Connell; George G. Barclay
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Critical material properties for pattern collapse mitigation
Author(s): Gustaf Winroth; Todd R. Younkin; James M. Blackwell; Roel Gronheid
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Accelerated purge drying to prevent pattern collapse without surfactant rinse for high-aspect ratio resist patterns
Author(s): Tomohiro Goto; Charles Pieczulewski; Akihiko Morita
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Investigation of pattern wiggling for spin-on organic hardmask materials
Author(s): Goji Wakamatsu; Kentaro Goto; Yoshi Hishiro; Taiichi Furukawa; Satoru Murakami; Masayuki Motonari; Yoshikazu Yamaguchi; Tsutomu Shimokawa; Greg Breyta; Anuja DeSilva; Noel Arellano; Luisa D. Bozano; Carl E. Larson; Martin Glodde; Ratnam Sooriyakumaran
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Spin-on-carbon-hardmask with high wiggling resistance
Author(s): Yasunobu Someya; Tetsuya Shinjo; Keisuke Hashimoto; Hirokazu Nishimaki; Ryo Karasawa; Rikimaru Sakamoto; Takashi Matsumoto
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Substrate and underlayer dependence of sub-32nm e-beam HSQ pillar patterning process for RRAM application
Author(s): Wei-Su Chen; Peng-Sheng Chen; Hung-Wen Wei; Frederick T. Chen; Ming-Jinn Tsai; Tzu-Kun Ku
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Conductive layer for charge dissipation during electron-beam exposures
Author(s): Luisa D. Bozano; Ratnam Sooriyakumaran; Linda K. Sundberg; Martha I. Sanchez; Elizabeth M. Lofano; Charles T. Rettner; Takayuki Nagasawa; Satoshi Watanabe; Yoshio Kawai; Nagarajan Palavesam; Gustavo Gandara Montano
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The saga of lambda: spectral influences throughout lithography generations
Author(s): Bruce W. Smith
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Patterning development in spin-on hard mask systems for 30nm half-pitch EUV technology
Author(s): Vincent Truffert; Ivan Pollentier; Philippe Foubert; Frederic Lazzarino; Yuusuke Anno; Christopher J. Wilson; Monique Ercken; Roel Gronheid; Steven Demuynck; Xavier Buch
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The novel spin-on hard mask and ultrathin UL material for EUVL
Author(s): Rikimaru Sakamoto; Hiroaki Yaguchi; Syuhei Shigaki; Suguru Sassa; Noriaki Fujitani; Takafumi Endo; Ryuji Onishi; Bang Ching Ho
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EUV resist processing with flash-lamp
Author(s): Julius Joseph Santillan; Koji Kaneyama; Akihiko Morita; Kazuhiko Fuse; Hiroki Kiyama; Masaya Asai; Toshiro Itani
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Stable, fluorinated acid amplifiers for use in EUV lithography
Author(s): Seth Kruger; Kenji Hosoi; Brian Cardineau; Koichi Miyauchi; Robert Brainard
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CD error budget analysis for self-aligned multiple patterning
Author(s): Kenichi Oyama; Sakurako Natori; Shohei Yamauchi; Arisa Hara; Hidetami Yaegashi
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Demonstration of 22nm SRAM features with patternable hafnium oxide-based resist material using electron-beam lithography
Author(s): Xaver Thrun; Kang-Hoon Choi; Martin Freitag; Andrew Grenville; Manuela Gutsch; Christoph Hohle; Jason K. Stowers; Johann W. Bartha
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Direct implant through BARC
Author(s): Tomoya Ohashi; Makiko Umezaki; Yoshiomi Hiroi; Shigeo Kimura; Yuki Usui; Takahiro Kishioka
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Focus improvement with NIR absorbing underlayer attenuating substructure reflectivity
Author(s): Wu-Song Huang; Dario Goldfarb; Wai-kin Li; Martin Glodde; Kazumi Noda; Seiichiro Tachibana; Masaki Ohashi; Dah-Chung Owe-Yang; Takeshi Kinsho
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Design, synthesis, and characterization of KrF negative developable bottom anti-reflective coating materials
Author(s): Sen Liu; Kuang-Jung Chen; Wu-Song Huang; Steven Holmes; Karen Huang; Nicolette Fender; Ranee Kwong; Brian Osborn; Cherry Tang; Chung-Hsi Wu; Mark Slezak
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Limitation of blend type of resist platform on EUV lithography
Author(s): Taku Hirayama; Su Min Kim; Hai Sub Na; Chawon Koh; Hyun Woo Kim
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Theoretical study on structural effects of polymer ionization for EUV resist
Author(s): M. Endo; S. Tagawa
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Investigation of correlation with the octanol water partition coefficient and the sensitivity of negative-tone molecular resists
Author(s): Masatoshi Echigo; Masako Yamakawa; Yumi Ochiai; Yu Okada; Masaaki Takasuka
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A novel single-component resist based on poly (4-hydroxylstyrene) applicable for EUV lithography
Author(s): Juan Liu; Min Li; Liyuan Wang
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Defining and measuring development rates for a stochastic resist
Author(s): Chris A. Mack
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Diffusion of acid from resist to Si-hardmask layer
Author(s): Masamitsu Shirai; Hiroki Takeda; Tatsuya Hatsuse; Haruyuki Okamura; Hiroyuki Wakayama; Makoto Nakajima
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LWR reduction by photoresist formulation optimization for 193nm immersion lithography
Author(s): Dennis Shu-Hao Hsu; Wei-Hsien Hsieh; Chun-Yen Huang; Wen-Bin Wu; Chiang-Lin Shih
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Observation of swelling behavior of ArF resist during development by using QCM method
Author(s): Atsushi Sekiguchi; Hiroko Konishi; Mariko Isono
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Study of the lithography characteristics of novolak resist at different PAC concentrations
Author(s): Atsushi Sekiguchi; Akichika Nakao; Hideo Horibe; Hatsuyuki Tanaka
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Synthesis and photopolymerization kinetics of a novel oxime ester sulfonic acid photoacid generator
Author(s): Yu-Lian Pang; Ying-Quan Zou
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Synthesis of stable acid amplifiers that produce strong highly-fluorinated polymer-bound acid
Author(s): Kenji Hosoi; Brian Cardineau; William Earley; Seth Kruger; Koichi Miyauchi; Robert Brainard
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Ionic carbamate photoacid/photobase generators for the advancement of dual-tone photolithography
Author(s): Geniece L. Hallett-Tapley; Tse-Luen Wee; Joby Eldo; Edward A. Jackson; James M Blackwell; Juan C. Scaiano
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Positive-tone chemically amplified fullerene resist
Author(s): J. Manyam; A. Frommhold; D. X. Yang; A. McClelland; M. Manickam; J. A. Preece; R. E. Palmer; A. P. G. Robinson
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Synthesize and polymerization of novel photocurable vinyl ether monomers containing perfluorinated aromatic units
Author(s): Wei Li; Ying Quan Zou
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Reduced Zeta potential through use of cationic adhesion promoter for improved resist process performance and minimizing material consumption
Author(s): Lorna Hodgson; Andrew Thompson
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Resist surface crosslinking using amine-based reactive rinses to mitagate pattern collapse in thin film lithography
Author(s): Wei-Ming Yeh; Richard A. Lawson; Laren M. Tolbert; Clifford L. Henderson
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Application of aziridine reactive rinses in a post-development process to reduce photoresist pattern collapse
Author(s): Wei-Ming Yeh; Richard A. Lawson; Laren M. Tolbert; Clifford L. Henderson
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Characteristics analysis of RELACS process from an OPC point of view
Author(s): Jinyoung Choi; Minae Yoo; Chanha Park; Changil Oh; Cheolkyun Kim; Hyunjo Yang; Donggyu Yim
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Development of Si-HM for NTD process
Author(s): Wen Liang Huang; Yu Chin Huang; Bo Jou Lu; Yi Jing Wang; Yeh Sheng Lin; Chun Chi Yu; Satoshi Takeda; Yasunobu Someya; Makoto Nakajima; Yuta Kanno; Hiroyuki Wakayama; Rikimaru Sakamoto
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Negative-tone development of photoresists in environmentally friendly silicone fluids
Author(s): Christine Y. Ouyang; Jin-Kyun Lee; Christopher K. Ober
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High-etching selectivity of spin-on-carbon hard mask process for 22nm node and beyond
Author(s): Fumiko Iwao; Satoru Shimura; Hideharu Kyouda; Kenichi Oyama; Shohei Yamauchi; Arisa Hara; Sakurako Natori; Hidetami Yaegashi
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Applicability of double-patterning process for fine-hole patterns
Author(s): Shohei Yamauchi; Arisa Hara; Kenichi Oyama; Sakurako Natori; Hidetami Yaegashi
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Plasmon mediated polymerization on the surface of silver nanoparticles for advancements in photolithographic patterning
Author(s): Kevin G. Stamplecoskie; Juan C. Scaiano
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Advanced multi-patterning using resist core spacer process for 22nm node and beyond
Author(s): Yuhei Kuwahara; Satoru Shimura; Hideharu Kyouda; Kenichi Oyama; Shohei Yamauchi; Arisa Hara; Sakurako Natori; Hidetami Yaegashi
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Combinatorial process optimization for negative photo-imageable spin-on dielectrics and investigation of post-apply bake and post-exposure bake interactions
Author(s): Jihoon Kim; Ruzhi M. Zhang; Elizabeth Wolfer; Bharatkumar K. Patel; Medhat Toukhy; Zachary Bogusz; Tatsuro Nagahara
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Tunable resin reactivity of spin-on dielectric by controlling synthesis process
Author(s): Kwen Woo Han; Hyun-Ji Song; Mi-Young Kim; Eun Su Park; Hui Chan Yoon; Go Eun Kim; Sang Hak Lim; Sang Kyun Kim
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KrF resists for implant layers patterning extreme high-aspect ratio structures with a double focal plane exposure technique
Author(s): Giorgio Rafaelli; Fabio Ferri; Stefano Volpi; Chisun Hong
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Gray-level 3D resist process and its application
Author(s): Yung-Chiang Ting; Shyi-Long Shy; Andy Liu; Cheng-San Wu; C. C. Chen
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Measurement and reduction of micro-bubble formation in high-viscosity fluids
Author(s): Glenn Tom; Wei Liu
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Blob defect prevention in 193nm topcoat-free immersion lithography
Author(s): Deyan Wang; Jinrong Liu; Doris Kang; Cong Liu; Tom Estelle; Cheng-Bai Xu; George Barclay; Peter Trefonas
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Solvent pre-wetting as an effective start-up method for point-of-use filter
Author(s): Toru Umeda; Shinichi Sugiyama; Takashi Nakamura; Makoto Momota; Michael Sevegney; Shuichi Tsuzuki; Toru Numaguchi
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The filter adsorption mechanism in photoresist materials
Author(s): Tetsu Kohyama
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Post-developed defect in word-line SADP process
Author(s): P. J. Cheng; F. N. Tsai; C. C. Yang; Elvis Yang; T. H. Yang; K. C. Chen; Chih-Yuan Lu
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Pattern dependent satellite defects in via lithography
Author(s): Chih-Chieh Yu; Mars Yang; Elvis Yang; T. H. Yang; K. C. Chen; Chih-Yuan Lu
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Resist process optimization for further defect reduction
Author(s): Keiichi Tanaka; Tomohiro Iseki; Hiroshi Marumoto; Koji Takayanagi; Yuichi Yoshida; Ryouichi Uemura; Kosuke Yoshihara
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Effects of nylon filter properties on contact-hole photoresist imaging performance and defectivity
Author(s): M. Cronin; N. Vitorino; V. Monreal; J. Zook
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